• Transactions on Electrical and Electronic Materials
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• v.12 no.4
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• pp.148-151
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• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

• Journal of the Korean Mathematical Society
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• v.58 no.3
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• pp.609-631
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• 2021

Let C[0, T] denote a generalized analogue of Wiener space, the space of real-valued continuous functions on the interval [0, T]. Define $Z_{\vec{e},n}$ : C[0, T] → ℝⁿ⁺¹ by $$Z_{\vec{e},n}(x)=\(x(0),\;{\int}_0^T\;e_1(t)dx(t),{\cdots},\;{\int}_0^T\;e_n(t)dx(t)\)$$, where e₁,…, e_n are of bounded variations on [0, T]. In this paper we derive a simple evaluation formula for Radon-Nikodym derivatives similar to the conditional expectations of functions on C[0, T] with the conditioning function $Z_{\vec{e},n}$ which has an initial weight and a kind of drift. As applications of the formula, we evaluate the Radon-Nikodym derivatives of various functions on C[0, T] which are of interested in Feynman integration theory and quantum mechanics. This work generalizes and simplifies the existing results, that is, the simple formulas with the conditioning functions related to the partitions of time interval [0, T].

• Korean Journal of Materials Research
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• v.15 no.6
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• pp.382-387
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• 2005

Polyvinylidene fluoride (PVDF) surface was irradiated and became superhydrophilic by low energy (180 eV) and high flux $(\~10^{15}/cm{\cdot}s)$ ion beam. As an ion source, a closed electron Hall drift thruster of $\phi=70mm$ outer channel size without grid was adopted. Ar, $O_2$ and $N_2O$ were used for source gases. When $N_2O^+$ and $O_2^+$ reactive gas ion beam were irradiated with the ion fluence of $5\times10^{15}/cm^2$, the wetting angle for deionized water was drastically dropped from $61^{\circ}\;to\;4^{\circ}\;and\;2^{\circ}$, respectively. Surface energy was also increased up to from 44 mN/m to 81 mN/m. Change of chemical component in PVDF surface was analyzed by x-ray photoelectron spectroscopy. Such a great increase of the surface energy was intimately related with the increase of hydrophilic group component in reactive ion irradiated PVDF surfaces. By using an atomic force microscopy, the root-mean-square of surface roughness of ion irradiated PVDF was not much altered compared to that of pristine PVDF.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.696-699
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• 1999

The electron transport coefficients in $SF_6+N_2$ gas is analysed in range of E/N values from 100~900(Td) by a Monte Carlo simulation and Boltzmann method, using a set of electron collision cross sections determined by the authors. The result of the Monte Carlo simulation such as electron drift velocity, ionization and electron attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N.

• Transactions on Electrical and Electronic Materials
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• v.10 no.4
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• pp.107-110
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• 2009

In this study, the Hall effect has been studied in n-GaAs samples characterized by V/IIl growth ratios of 25, 50 and 100 and prepared by metal organic chemical vapor deposition. For the Hall effect measurements, the grown samples were cut to a size of 1${\times}$1 cm. The measurements were carried out at room temperature, using Indium contact metal at the four corners of the samples. According to the experimental results, the Schottky effect was not ovservation. Also for the n-GaAs sample of V/Ill 100 ratio the electron drift velocity was very high.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1996.11a
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• pp.134-139
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• 1996

The electron energy distributions function were analysed in sulphur hexaflouride at E/N : 500~800(Td) for a case of non-equilibrium ion in the mean electron energy. This paper describes the electron transport characteristics in SF$_{6}$ gas calculated for range of E/N values from 150~800(Td) by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters. The results gained that the value of an electron swarm parameter such as the electron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches in an electron energy non-equilibrium region.n.

• Journal of Electrical Engineering and Technology
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• v.10 no.4
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• pp.1734-1737
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• 2015

Insulating characteristics of Cl₂-He mixture gases in gas discharges were analysed to evaluate ability of these gases for using in medium voltage and many industries. These are electron transport coefficients, which are the electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient, in Cl₂-He mixtures. A two-term approximation of the Boltzmann equation was used to calculate the electron transport coefficients for the first time over a wide range of E/N (ratio of the electric field E to the neutral number density N). The limiting field strength values of E/N, (E/N)_lim, for these binary gas mixtures were also derived and compared with those of the pure SF₆ gas.

• Proceedings of the Membrane Society of Korea Conference
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• 1994.10a
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• pp.17-19
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• 1994

고분자 분리막의 구조가 투과율에 미치는 영향에 대해서는 지금까지 많은 연구가 행하여져 왔지만, 분자구조가 투과경로에 미치는 영향에 대한 연구는 아직 미미하며, black box approach만으로는 투과경로를 기술하기 어렵다. Impedance spectrowcopy는 막에 alternating electric field를 가해줌으로써 얻어지는 전류와 전압의 상관관계를 이용하여, 막내의 전해질의 투과에 대한 정보를 얻어내는 기기로써, dielectric loss spectra를 분석하면 투과물의 투과경로에 대한 정보도 얻을 수 있다. 전해질을 포함한 막의 dielectric loss ($\varepsilon"$) spectra는 다음의 식과 같이 두 부분으로 나뉘어 진다. $\varepsilon" = \varepsilon_{ac}" + \varepsilon_{dc}"$ (1) $\varepsilon_{dc}"$는 막을 통한 이온의 투과에 관계된 항이며, $\varepsilon_{ac}"$는 강한 dipole의 relaxation에 의해 나타나는 항이다. $\varepsilon_{dc}"$는 다음의 실험식에 의해 잘 기술되어진다. $\varepsilon_{dc}" = A\omega^{-n}$ 0

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.2
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• pp.227-227
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• 1999

The electron energy distributions function were analysed in sulphur hexaflouride at E/N : 500~800(Td) for a case of non-equilibrium region in the mean electron energy. This paper describes the electron transport characteristics in $SF_6$ gas calculated for range of E/N values from 150~800(Td) by the Monte Carlo simulation and Boltzmann equation method using a set of electron collision cross sections determined by the authors and the values of electron swarm parameters. The results gained that the value of ane1ctron swarm parameter such as the e1ectron drift velocity, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients agree with the experimental and theoretical for a range of E/N. The properties of electron avalanches in an electron energy non-equilibrium region.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.152-159
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• 2004

In this study, we design the one-chip PWM IC with high voltage power switch (300V class LDMOSFET) for SMPS (Switching Mode Power Supply) application. Reference circuits generate constant voltage(5V) in the various of power supply and temperature condition. Error amp. is designed with large DC gain $({\simeq}65dB)$, unity frequency $({\simeq}190kHz)$ and large $PM(75^{\circ})$. comparator is designed with 2 stage. Saw tooth generators operate with 20kHz oscillation frequency. Also, we optimize drift concentration & drift length of n-LDMOSFET for design of high voltage switching device. It is shown that simulation results have the breakdown voltage of 350V. (using ISE-TCAD Simulation tool). PWM IC with power switching device is designed with 2um design rule and Bi-DMOS technology.