• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.285-286
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• 2007

Current distributions according to electrode patterns in vertical structured InGaN/GaN LED (light emitting diode) were investigated quantitatively by utilizing three dimensional electrical circuit modeling method. The uniformity of the injected current density in the active layer was compared among different electrode patterns. It was found that the current uniformity was greatly dependent on the electrode pattern in vertical InGaN/GaN LEDs.

• 전력전자학회논문지
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• 제2권3호
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• pp.51-57
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• 1997

본 논문은 기존의 히스테리시스 전류 제어기에 N.P.C(Neutral-Point-Clamped) 인버터의 구조를 교류 전동기 시스템의 적용하므로서 전동기 시스템의 토오크 특성의 개선 및 손실의 원인이 되는 고조파 성분을 감소시키기 위한 기법을 제안하였다. 제안된 스위칭 기법은 기존의 히스테리시스 전류제어기를 적용하는 인버터와 비교하여 50%의 스위칭 주파수의 저감 효과를 기할 수 있다. 본 논문에서는 제안된 스위칭 기법의 특성을 기존의 스위칭 기법과 비교하여 시뮬레이션을 시행함으로서 제안된 스위칭 기법의 우수성을 입증하였다.

• 한국전기전자재료학회논문지
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• 제22권8호
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• pp.654-658
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• 2009

For investigation of surface leakage currrent of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall, three kind of surface-leakage-test-patterns were fabricated. and we measured the surface leakage current of each patterns. In result of our work, the surface leakage current of pattern of which Schottky contact is formed on etched mesa wall is the largest. the leakage current through schottky contact on etched mesa wall is predominant in AlGaN/GaN heterostructures.

• 전자공학회논문지A
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• 제29A권8호
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• pp.71-77
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• 1992

According to increasing the doping concentration in p-n junction, a tunneling current through trap as well as SRH(Shockley-Read-Hall) generation-recombination current in depletion region occurs. It is the tunneling current that is a dominant current at the forward bias. In this paper, the new tunneling-recombination equation is derived. The thermal generation-recombination current and tunneling current though trap can be easily calculated at the same time because this equation has the same form as the SRH generation-recombination equation. For the validity of this equation, 2 kind of samples are simulated. The one is $n^{+}$-p junction device fabricated with MCT(Mercury Cadmium Telluride, mole fraction=0.29), the other Si n$^{+}-p^{+}$ junction. From the results for MCT $n^{+}$-p junction device and comparing the simulated and expermental I-V characteristics for Si n$^{+}-p^{+}$ junction, it is shown that this equation is a good description for tunneling through trap and thermal generation-recombination current calculation.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권1호
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• pp.18-22
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• 2005

We have proposed and fabricated a dual gate AlGaN/GaN high electron mobility transistor (HEMT), which exhibits the low leakage current and the high breakdown voltage for the high voltage switching applications. The additional gate between the main gate and the drain is specially designed in order to decrease the electric field concentration at the drain-side of the main gate. The leakage current of the proposed HEMT is decreased considerably and the breakdown voltage increases without sacrificing any other electric characteristics such as the transconductance and the drain current. The experimental results show that the breakdown voltage and the leakage current of proposed HEMT are 362 V and 75 nA while those of the conventional HEMT are 196 V and 428 nA, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.21-22
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• 2009

We proposed circular AlGaN/GaN schottky barrier diode, which has no mesa structure near the current path. Proposed device showed low leakage current of 10 nA/mm at -100 V while that of the rectangular device was 34 nA/mm at the same condition. Proposed circular AlGaN/GaN SBD showed high forward current of 88.61 mA at 3.5 V while that of the conventional device was 14.1 mA at the same condition.

• Nuclear Engineering and Technology
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• 제29권6호
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• pp.468-475
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• 1997

The transient photocurrent in amorphous silicon radiation detectors (n-i-n and forward biased p-i-n) were analyzed. The transient photocurrents in these devices could be modeled using multiple trap levels in the forbidden gap. Using this model the rise and decay shapes of the photocurrents could be fitted. The decaying photocurrent shapes of the p-i-n and n-i-n devices after a short duration of light pulse showed a similar behavior at low dark current density levels, but at higher dark current density levels the photocurrent of the p-i-n diode decayed faster than that of the n-i-n, which could be explained by the decreased electron lifetimes in the forward biased p-i-n diode at high dark current densities. The transient photoconductive gain behaviors in the amorphous silicon radiation detectors are discussed in terms of device configuration, dark current density and time scale.

• 한국광학회:학술대회논문집
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• 한국광학회 2007년도 하계학술발표회 논문집
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• pp.289-290
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• 2007

We have theoretically derived a electrical model and extracted a parasitic parameters of leakage current in InGaN/GaN light emitting diodes (LEDs). The parasitic parameters of our LED are $R_p=10^{10}{\Omega}$, $I_{0,2}=10^{-17}A$ and $n_2=3.6$, which provide information of leakage current.

• 물과 미래
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• 제6권2호
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• pp.30-37
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• 1973

The coefficient of the current meter generally determined by the maker Its coefficient is subject to being changed with time. Therefore the coefficient of the current meter has to be checked up before it is ready to be used Such an inspection is termed a current meter rating The current meter equipped an electronic apparatus and all the others are to be rated in a rating flume. The price current meter which is most widely used for measuring flow velocities ranging between 0.3m/sec and 3.5m/sec has been used in this study. The length of the flume and the optimum range of the rating in the cross section are determined in the range of 20∼120cm deep, 50∼160cm wide of the flume. In this study, the 23 different kinds of the current meter rating enabled us to determine the constants a and b of the following equation. V=an+b(m/sec) where, n is number of revolution per second(n=N/T) V is velocity(v=D/T) The above constant can be determined by the least squares method and plotting, using the velocity(V=D/T) and the number of revolution per second(n=N/T) obtained from the running distance(D), time(T), the number of revolutin(N), and the running number(m). From the experiments the following conclusions are drawn: 1) The rating flume is large enough if the flume is 110∼120cm deep, and 40∼50m long. 2) The optimum depth for rating of a current meter is in the range of h=40∼50cm.

• 전기학회논문지
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• 제60권12호
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• pp.2265-2269
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• 2011

1 kV high-voltage GaN Schottky diode is realized using GaN-on-Si template by oxidizing Ni-Schottky contact. The Auger electron spectroscopy (AES) analysis revealed the formation of $NiO_x$ at the top of Schottky contact. The Schottky contact was changed to from Ni/Au to Ni/Ni-Au alloy/Au/$NiO_x$ by oxidation. Ni diffusion into AlGaN improves the Schottky interface and the trap-assisted tunneling current. In addition, the reverse leakage current and the isolation-leakage current are efficiently suppressed by oxidation. The isolation-leakage current was reduced about 3 orders of magnitudes. The reverse leakage current was also decreased from 2.44 A/$cm^2$ to 8.90 mA/$cm^2$ under -100 V-biased condition. The formed group-III oxides ($AlO_x$ and $GaO_x$) during the oxidation is thought to suppress the surface leakage current by passivating surface dangling bonds, N-vacancies and process damages.