• Proceedings of the Korean Environmental Health Society Conference
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• 2004.06a
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• pp.169-172
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• 2004

A gas chromatography/mass spectrometric assay method was developed for the determination of propylene oxide adduct, N-(3-hydroxypropyl)valine. Adduct was released from hemoglobin by alkaline hydrolysis and extract at pH 8 with ethyl ether. The dried extract was completely derivatized with N-Methyl-N-(trimethylsilyl) trifluoroacetamide (MSTFA)/TMS-I (100:3). The detection limits of the assay were 0.08 ng/g for N-(3-hydroxypropyl)valine based upon assayed hemoglobin of 0.1 g. The method was applied to the determination of propylene oxide adduct formed in young female Sprague-Dawley rats after treatment for 1, 2 and 3 weeks with 0.008 % propylene oxide via the drinking water. An adduct was detected by proposed procedure. The structure of the adduct could be assigned to N-(3-hydroxypropyl)valine.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.6
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• pp.117-127
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• 1994

In this paper, electrical and reliability properties of N$_2$O oxides, grown at the temperature of 95$0^{\circ}C$ and 100$0^{\circ}C$ to 74$\AA$, and 82$\AA$. respectively, using NS12TO gas in a conventional furnace, have been compared with those of pure oxide grown at the temperature of 850 to 84$\AA$ using O$_2$ gas. Initial IS1gT-VS1gT characteristics of N$_2$O oxides were similar to those of pure oxide, and reliability properties of N$_2$O oxides, such as charge trapping, interface state density and leakage current at low electric field under F-N stress, were improved much better than those of pure oxide. But, with increasing capacitor area. TDDB characteristics of N$_2$O oxides were more degraded than those of pure oxide and this degradation of TDDB characteristics was more severe in 100$0^{\circ}C$ N$_2$Ooxide than in 95$0^{\circ}C$ N$_2$O oxide. The improvement of reliability properties excluding TDDB in N$_2$Ooxides was attributed to the hardness of the interface improved by nitrogen pile-up at the interface of Si/SiO$_2$, but on the other hand, the degradation of TDDB characteristics in N$_2$O oxides was obsered due to the increase of local thinning spots caused by excessive nitrogen at interface during the growth of N$_2$O oxides.

• Clean Technology
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• v.16 no.4
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• pp.284-291
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• 2010

Nitrous oxide ($N_2O$) is a greenhouse material which is hard to remove. Even with a catalytic process it requires a reaction temperature, at least, higher than 670 K. This study has been performed to see the effects of Ce addition to the mixed oxide catalyst which shows the highest activity in decomposing $N_2O$ completely at temperature as low as 473 K when CO is used as a reducing agent. Mixed metal oxide(MMO) catalyst was made through co-precipitation process with small amount of Ce added to the base components of Co, Al and Rh or Pd. Consequently, the surface area of the catalyst decreased with the contents of Ce, and the catalytic activity of direct decomposition of $N_2O$ also decreased. However, in the presence of CO, the activity was found high enough to compensate the portion of activity decrease by Ce addition, so that it can be ascertained that the catalytic activity and stability can be maintained in the CO involved $N_2O$ reduction system when Ce is added for the physical stability of the catalyst.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.5
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• pp.168-173
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• 2020

To analyze and describe the behavior and mechanisms occurring in the thermal oxidation process of AlN, bulk AlN single crystals were thermally treated with different temperatures. As a result, it was confirmed that full-scale oxidation of bulk AlN and growth of Al-oxide occurred from the temperature of 800℃, which confirmed that the weight% of O elements tended to increase while the N elements decreased with increasing the temperature. In the case of thermal treatment at 900℃, the grown Al-oxides were merged with neighboring Al-oxides and began to form α-Al₂O₃ poly-crystals. During thermal treatment at the temperature of 1000℃, hexagonal pyramidal shaped poly-crystalline α-Al₂O₃ was clearly observed. Through the X-ray diffraction pattern analysis, the changes of surface crystal structure according to the temperature of bulk AlN were investigated in detail.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.449-457
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• 2012

The program/erase (P/E) cyclic endurances including bias temperature instability (BTI) behaviors of Metal-$Al_2O_3$-Nitride-Oxide-Semiconductor (MANOS) memories are investigated in comparison with those of Semiconductor-Oxide-Nitride-Oxide-Semiconductor (SONOS) memories. In terms of BTI behaviors, the SONOS power-law exponent n is ~0.3 independent of the P/E cycle and the temperature in the case of programmed cell, and 0.36~0.66 sensitive to the temperature in case of erased cell. Physical mechanisms are observed with thermally activated $h^*$ diffusion-induced Si/$SiO_2$ interface trap ($N_{IT}$) curing and Poole-Frenkel emission of holes trapped in border trap in the bottom oxide ($N_{OT}$). In terms of the BTI behavior in MANOS memory cells, the power-law exponent is n=0.4~0.9 in the programmed cell and n=0.65~1.2 in the erased cell, which means that the power law is strong function of the number of P/E cycles, not of the temperature. Related mechanism is can be explained by the competition between the cycle-induced degradation of P/E efficiency and the temperature-controlled $h^*$ diffusion followed by $N_{IT}$ passivation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.421.1-421.1
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• 2016

We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

• Microbiology and Biotechnology Letters
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• v.47 no.4
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• pp.630-638
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• 2019

Nitrous oxide (N₂O) is a greenhouse gas with a global warming potential 310 times higher than that of carbon dioxide. In this study, an N₂O-reducing consortium was obtained by enrichment culture using advanced treatment sludge as the inoculum. The dominant bacteria in the consortium were Sulfurovum (17.95%), Geobacter (14.63%), Rectinema (11.45%), and Chlorobium (8.24%). The consortium displayed optimal N₂O reducing activity when acetate was supplied as the carbon source at a carbon/nitrogen ratio (mol·mol^-1) of 6.3. The N₂O reduction rate increased with increasing N₂O concentration at less than 3,000 ppm. Kinetic analysis revealed that the maximum N₂O reduction rate of the consortium was 163.9 ㎍-N·g-VSS^-1·h^-1. Genes present in the consortium included nosZ (reduction of nitrous oxide to N₂), narG (reduction of nitrate to nitrite), nirK (reduction of nitrite to nitric oxide), and norB (reduction of nitric oxide to nitrous oxide). These results indicate that the N₂O-reducing consortium is a promising bioresource that can be used in denitrification and N₂O mitigation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.176-176
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• 2003

The effects of oxide thickness and gate length of MgO/GaN metal oxide semiconductor field effect transistors (MOSFETs) on I-V, threshold voltage and breakdown voltage characteristics were examined using a drift-diffusion model. The saturation drain current scales in an inverse logarithmic fashion with MgO thickness and is < 10$^{-3}$ A.${\mu}{\textrm}{m}$$^{-1}$ for 0.5 ${\mu}{\textrm}{m}$ gate length devices with oxide thickness > 600 $\AA$ or for all 1 ${\mu}{\textrm}{m}$ gate length MOSFETs with oxide thickness in the range of >200 $\AA$. Gate breakdown voltage is > 100 V for gate length >0.5 ${\mu}{\textrm}{m}$ and MgO thickness > 600 $\AA$. The threshold voltage scales linearly with oxide thickness and is < 2 V for oxide thickness < 800 $\AA$ and gate lengths < 0.6 ${\mu}{\textrm}{m}$. The GaN MOSFET shows excellent potential for elevated temperature, high speed applications.

• Transactions of the Korean Society of Automotive Engineers
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• v.2 no.5
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• pp.121-134
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• 1994

Shock tube investigation of ethylene oxide-$0_{2}-N_{2}$ mixture have been performed to reveal detonation characteristics of the mixture in terms of detonation pressure and speed. Theoretical calculation of thermodynamic parameters at the Chapmann-Jouguet detonation of the mixture has been also performed. A comparision of the observed results with the calculated ones can lead us to predict the detonation parameters of ethylene oxide in an artificial air. In addition, we have observed ignition delay times of ethylene oxide mixtures. The best fit of the observed delay times to Arrhenius gas kinetic relation gives : ${\tau}=10^{-144}{e{xp}}(E_a/RT)[C_{2}H_{4}O]^{-4.8}[O_{2}]^{-12.4}[N_{2}]^{-14.1}$ $E_a=3.67kcal/mole$ The observed activation energy is markedly reduced, compared with the case of ethylene oxide diluted in Ar. It could be due to the factor that $N_2$ play a role as detonation promoter yielding very reactive NOx radicals.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.31.2-31.2
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• 2011

We have investigated frequency dependant conductivity (or permittivity) of low dimensional oxide structures represented by [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/1$[SrTiO_3]_n$ superlattices. The low dimensional oxide superlattice was made by cumulative stacking of one unit cell thick La doped $SrTiO_3$ and $SrTiO_3$ with variable thickness from 1 to 6 unit cell, i,e, [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/$[SrTiO_3]_n$ (n=1, 2, 3, 4, 5, 6). We found two kinds of relaxation when n is 3 and 4, while, inductance component was observed at n=1. This behavior can be explained by electron modulation in ($Sr_{0.75}$, $La_{0.25}$)$TiO_3/SrTiO_3$ superlattices. When n is 1, electrons by La doping well extend to un-doped layer. Therefore, the transport of superlattices follows bulk-like behavior. On the other hand, as n increased, the doped electrons became two types of carrier: one localized and the other extended. These results in two kinds of transport phase. At further increase of n, most of doped electrons are localized at the doped layer. This result shows that dimensionality of the oxide structure significantly affect the transport of oxide nanostructures.