• Proceedings of the Korean Society of Marine Engineers Conference
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• 2005.11a
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• pp.51-52
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• 2005

Optical characteristics of excitonic blue and green emission of Te-doped ZnSSe:Te epitaxial layers, grown by molecular beam epitaxy, were investigated by photoluminescence (PL) measurements. The Te-doped ternary specimen shows strong blue or green emission (at 300K) which is assigned to $Te_1$ or $Te_n$ $(n{\geq}2)$ cluster cluster bound exciton, respectively. Bright green and blue light emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The green LEDs exhibit a fairly long device lifetime (>2000 h) when operated at 3 $A/cm^2$ under CW condition at room temperature.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2002.05a
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• pp.167-171
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• 2002

We have investigated the optical properties of Te-doped ZnSSe:Te epitaxial layers grown on (100) GaAs substrates by molecular beam epitaxy. The Te-doped ternary specimen shows strong blue or green emission (at 300k) which is assigned to Te$_{1}$ or Te$_{n}$( n$\geq$2) cluster bound exciton. Bright green and blue light-emitting diodes (LEDs) have been developed using ZnSSe:Te system as an active layer. The green LEDs exhibit a fairly long device lifetime (>2000 h) when operated at 3 A/cm$^{2}$ under CW condition at room temperature. It is confirmed that the Te-doping induced "crystal-hardening effect" plays a significant role in both efficient and strong suppression of the optical device degradation.gradation.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.51.1-51.1
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• 2010

$Y_2O_3$ $Er_2O_3$ and $Nd_2O_3$ doped polycrystalline silicon nitride were prepared by hot pressed sintering at $1850^{\circ}C$ and their optical transmittance were investigated in visible and in infrared region. Mechanical and tribological properties were also investigated. Grain growth in silicon nitride was reduced with addition of $Y_2O_3$ and $Nd_2O_3$. 1 wt.% of each rare earth metal were sintered with 3 wt.% MgO, 9wt.% AlN and 87 wt.% of ${\alpha}-Si_3N_4$. Adding these rare earth metal oxides shows good mechanical properties as high strength and toughness and also shows low friction coefficient.

• Korean Journal of Materials Research
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• v.16 no.1
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• pp.58-62
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• 2006

Effects of doping concentration and annealing atmosphere on the luminescent properties of $Er^{3+}$ doped ZnO phosphor powders were investigated. Photoluminescence (PL) spectra of ZnO:Er exhibit an orange emission band at around 575 nm, while those of pure ZnO show a green emission at 520 nm. Emission difference between ZnO:Er and pure ZnO is attributed to the energy transfer of Er ions in ZnO. The highest PL intensity is obtained by doping 1 mol% Er to ZnO. Luminescent properties of ZnO:Er phosphors annealed at $N_2$+vacuum atmosphere are superior to those annealed at $N_2$ atmosphere.

• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.11-17
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• 2000

The low temperature electron mobilities were investigated in Si/$Si_{1-x}Ge_{x}$ modulation Doped (MOD) quantum well structure with thermally grown oxide. N-type Si/$Si_{1-x}Ge_{x}$ structures were fabricated by a gas source MBE. Thermal oxidation was carried out in a dry $O_2$ atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by a Hall effect and a magnetoresistant effect at low temperatures down to 0.4 K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2 DEG) in a tensile strained Si quantum well. The electron sheet density ($n_{s}$) of 1.5${\times}$$10^{12}$[$cm^{-2}$] and corresponding electron mobility of 14200 [$cm^2$$V^{-1}$$s^{-1}$] were obtained at low temperature of 0.4 K from Si/$Si_{1-x}Ge_{x}$ MOD quantum well structure with thermally grown oxide.

• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.96-100
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• 2008

The microstructure, voltage-current, and capacitance-voltage relations ofP CCYA doped ZnO-based varistors were investigated for different amounts of $Al_2O_3$. As the $Al_2O_3$ amount increased, the average grain size (d) increased from d=4.3 to $d=5.5{\mu}m$ and the sintered density $({\rho})$ increased from ${\rho}=5.63$ to ${\rho}=5.67g/cm^3$. As the $Al_2O_3$ amount increased, the breakdown voltage $(V_B)$ increased from $V_B=633$ to $V_B=71$ V/mm and the non-ohmic coefficient $({\alpha})$ increased from ${\alpha}=47$ to ${\alpha}=4$. $Al_2O_3$ served as a donor due to the donor density $(N_d)$, which increases in the range of $N_d=0.77-1.85{\times}10^{18}/cm^3$ with increasing amount of $Al_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.18-19
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• 2008

Polycrystalline(poly) 3C-SiC film is a promising structural material for M/NEMS used in harsh environments, bio and fields. In order to realize poly 3C-SiC based M/NEMS devices, the electrical properties of poly 3C-SiC film have to be optimized. The n-type poly 3C-SiC thin film is deposited by APCVD using HMDS$(Si_2(CH_3)_6)$ as single precursor and are in-situ doped using N2. Resistivity values as low as 0.014 $\Omega$cm were achieved. The carrier concentration increased with doping from $3.0819\times10^{17}$ to $2.2994\times10^{19}cm^{-3}$ and electronicmobility increased from 2.433 to 29.299 $cm^2/V{\cdot}s$.

• Journal of Magnetics
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• v.14 no.1
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• pp.23-26
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• 2009

Spin injection from a ferromagnet into an n-doped $In_{0.53}Ga_{0.47}As$ channel was electrically detected by a ferromagnetic detector. At T = 20 K, using non-local and local spin-valve measurements, a non-local signal of $2\;{\mu}V$ and a local spin valve signal of 0.041% were observed when the bias current was 1 mA. The band calculation and Shubnikov-de Haas oscillation measurement in a bulk channel showed that the gate controlled spin-orbit interaction was not large enough to control the spin precession but it could be a worthy candidate for a logic device using spin accumulation and diffusion.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.336-338
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• 2016

Recent multifunctional two-dimensional material research has triggered huge interests in various modifications for substitution of atoms. Instead of novel metals used as the most popular catalysts, nonprecious transition metals are promising candidates for efficient oxidation-reduction transfers. The recent discovery of $Co@C_2N$ has an alternate possiblity as catalysts for the ORR(Oxygen Reduction Reaction) in DSSc(Dye Sensitized Solar Cell) and OER(Oxygen evolution cobalt oxides). Here we report spin-polarized DFT calculations of the structure doped Iron that is one of ferromagnetism atoms like Co to provide a basic desciption of the ferromagnetism of the elemental metals. The spin-density-funtional results present the most stable state energetically is when having pairwise up/down spin.

• Proceedings of the KIEE Conference
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• 1997.07d
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• pp.1261-1263
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• 1997

Two kinds of optically-triggered p-i-n switches with planar and V-groove structures have been fabricated with gold-doped silicon. The V-groove device exhibits a higher threshold voltage and is more sensitive to light. The minimum optical power indicates that a certain minimum illumination is required to optically turn on the silicon p-i-n devices.