• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.05a
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• pp.104-108
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• 1993

Thin films of MgO-doped and CaO-doped iron oxide were prepared y spray pyrolysis. The films were characterized b X-ray diffraction, scanning electron microscopy and voltammetric techniques. The photoelectrochemical behavior of thin film electrodes depended greatly on the doping level, sintering temperature, substrate temperature and added photosensitizing compounds in solution, showed p-type photoelectrochemical behavior, while the CaO-doped iron oxide thin films prepared at low temperature showed n-type photoelectrochemical behavior. This characteristic change was interpreted in terms of the surface structure change of the thin films and doping effect of metal oxide.

• Journal of the Korean Ceramic Society
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• v.49 no.1
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• pp.124-129
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• 2012

An M-shaped SiC gas igniter was fabricated by a reaction sintering followed by nitrogen doping. The igniter showed both resistivity at room temperature and NTC to PTC transition temperature values that were lower than those of commercial igniters. It was deduced that the doped nitrogen reduces the electrical resistivity at room temperature, while, at high temperature, the doped nitrogen and a trace of $Si_3N_4$ phase work as scattering centers against electron transfer, resulting in a lowered NTC-to-PTC transition point (below $650^{\circ}C$). Such characteristics were correlated to the fast heating speed (as compared to the commercial models) and to the prevention of the high temperature overshooting of the nitrogen-doped SiC igniter.

• Progress in Superconductivity
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• v.10 no.1
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• pp.17-22
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• 2008

We have examined the effect of ball-milling on the superconducting properties of $MgB_2$ doped with C. The ball-milling of pre-reacted $MgB_2$ powder was carried out in dry or wet state using C or diethylenetriamine ($C_{4}H_{13}N_3$) as additives. The diethylenetriamine, whose chemical formula contains no oxygen, was chosen to avoid an excess oxidation during doping. The superconducting transition temperature (Tc) of the ball-milled or doped $MgB_2$ powders was only slightly smaller than that of undoped $MgB_2$. The critical current density (Jc) of the highly ball-milled $MgB_2$ was higher than that of C-doped $MgB_2$. The addition of diethylenetriamine was detrimental to Jc, although Tc was almost unchanged.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.1-10
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• 1994

Monodispersed alumina and Mg-doped alumina fine particles were prepared by controlled hydrolysis of alkoxides. Aluminium alkoxide and magnesium alkoxide were dissolved into complex solvent which was composed of hydrophobic n-octanol and hydrophilic acetonitrile. Hydroxypropyl cellulose(HPC) was used as a dispersant for the alumina particles. The size of these prepared powders was approximately 0.3 ${\mu}{\textrm}{m}$. In the case of sintering above 100$0^{\circ}C$, most of these prepared powders were transformed to $\alpha$-alumina. The relative density of the sintered body of these prepared powders at 1$600^{\circ}C$ was 98%. The sintered body of the Mg-doped alumina powder had more uniform grain size than that of the undoped alumina podwer.

• Korean Journal of Chemical Engineering
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• v.35 no.12
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• pp.2468-2473
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• 2018

Nitrogen-doped activated carbon fibers (ACFs) were prepared by chemical vapor deposition using melamine powder and acetonitrile for introducing quaternary nitrogen on the commercial ACFs, subsequently heated at $950^{\circ}C$ and activated by steam. Adsorption experiments of nitrate in aqueous solution were also conducted to evaluate adsorption capacity of the prepared ACFs using ion chromatography. The amount of introduced nitrogen content and nitrogen species on activated carbon fibers was examined by CHN elemental analyzer and X-ray photoelectron spectroscopy, respectively. As a result, adsorption capacity of quaternary nitrogen-doped ACF (ST-ML-AN-ST) was 0.75 mmol/g, indicating ca. two-times higher than that of untreated ACF (0.38 mmol/g). According to the adsorption data, the Langmuir isotherm model was the best fit. The prepared samples were also regenerated using hydrochloric acid. After regeneration, the adsorption capacity of the nitrogen-doped ACF (ST-ML-AN-ST) showed ca. 80% on average, implying that a portion of nitrates was adsorbed on the prepared ACFs irreversibly.

• Current Photovoltaic Research
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• v.2 no.4
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• pp.147-151
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• 2014

A boron doping process using a boron tri-bromide ($BBr_3$) as a boron source was applied to form a $p^+$ emitter layer on an n-type mono-crystalline CZ substrate. Nitrogen ($N_2$) gas as an additive of the diffusion process was varied in order to study the variations in sheet resistance and the uniformity of doped layer. The flow rate of $N_2$ gas flow was changed in the range 3 slm~10 slm. The sheet resistance uniformity however was found to be variable with the variation of the $N_2$ flow rate. The optimal flow rate for $N_2$ gas was found to be 4 slm, resulting in a sheet resistance value of $50{\Omega}/sq$ and having a uniformity of less than 10%. The process temperature was also varied in order to study its influence on the sheet resistance and minority carrier lifetimes. A higher lifetime value of $1727.72{\mu}s$ was achieved for the emitter having $51.74{\Omega}/sq$ sheet resistances. The thickness of the boron rich layer (BRL) was found to increase with the increase in the process temperature and a decrease in the sheet resistance was observed with the increase in the process temperature. Furthermore, a passivated emitter solar cell (PESC) type solar cell structure comprised of a boron doped emitter and phosphorus doped back surface field (BSF) having Ni/Cu contacts yielding 15.32% efficiency is fabricated.

• Applied Chemistry for Engineering
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• v.21 no.1
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• pp.29-33
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• 2010

In this study, boron, carbon, nitrogen and fluorine co-doped $TiO_{2}$ photocatalysts using tetraethylammonium tetrafluoroborate (TEATFB) have been prepared by different heat treatment temperatures to decrease the band gap. To explore the visible light photocatalytic activity of the novel low‐zband gap $TiO_{2}$ photocatalyst, the removal of two dyes was investigated, namely, acridine orange and rhodamine B. XRD patterns demonstrate that the samples calcined at temperatures up to $800^{\circ}C$ clearly show anatase peaks. The XPS results show that all the doped samples contain N, C, B and F elements and the doped $TiO_{2}$ shows the shift in the band gap transition down to 2.98 eV as UV-DRS results. In these UV-Vis results, photocatalytic activity of the doped $TiO_{2}$ is 1.61 times better than undoped $TiO_{2}$. Specially, excellent photoactivity results were obtained in the case of samples treated at $700^{\circ}C$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.30 no.1
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• pp.7-11
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• 2020

Carbon solubility on the paste deposition methods in the carbon-doped TiZrN coating was investigated in terms of lattice distortion and atomic concentration. After depositing the carbon paste by the dip coating, spin coating and screen printing, the laser was ablated to form the carbon gradient layer. Thickness and the concentration of doped carbon depended on the paste deposition method. Crystal structure analysis indicated that more lattice distortion occurred when coating layers were doped with spin coating and screen printing than when coating layers were doped with dip coating. The XPS depth profile showed that the thickness of carbon gradient layer by dip coating was about 30 nm, spin coating and screen printing are approximately 100 nm, formed more gradient layer. The hardness before laser carburization was about 30 GPa, and the hardness of 31 GPa with dip coating and 37 GPa with spin coating and screen printing. It was indicated that paste deposition methods for laser carburization contributed to lattice distortion and gradient layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.5
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• pp.254-259
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• 2003

In the fabrication process of transparent conducting thin films of the ATO (antimony-doped tin oxide) on a soda lime glass substrate by a sol-gel dip coating method, the effects of the $SiO_2$ buffer layer formed on the substrate and $N_2$ annealing treatment were investigated by XPS (X-ray photoelectron spectroscopy) analysis. Optical transmittance and electrical resistivity of the 400 nm-thick ATO thin films which were deposited on $SiO_2$ buffer layer/soda lime glass and then annealed under nitrogen atmosphere were 84 % and $5.0\times 10^{-3}\Omega \textrm{cm}$ respectively. The XPS analysis confirmed that a $SiO_2$ buffer layer inhibited Na ion diffusion from the substrate, resulting in prohibiting the formation of a secondary phase such as $Na_2SnO_3$ and SnO and increasing Sb ion concentration and ratio of $Sb^{5+}/Sb^{3+}$ in the film. And it was also found that $N_2$ annealing treatment leads to the reduction of $Sn^{4+}$as well as $Sb^{5+}$ however the reduction of $Sn^{4+}$ is more effective and therefore consequently results in decrease in the electrical resistivity to produce an excellent electrical properties of the film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.6-10
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• 2009

In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.