• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1998.05a
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• pp.405-408
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• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 5$0^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. Measurement electrical parameters are forward turn-on voltage, reverse breakdown voltage, barrier height, saturation current, ideality factor, dynamic resistance acceding to junction concentration of substrates and temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation current and ideality factor were increased by substrates concentration variations. Reverse breakdown voltage and dynamic resistance were increased by temperature variations.

• Journal of Magnetics
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• v.5 no.4
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• pp.111-115
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• 2000

Ultrafine $Co_{0.9}Mn_{0.1}Fe_2O_4$ powders have been fabricated by a sol-gel method. Structural and magnetic properties of the powders were investigated by x-ray diffractometry, transmission electron microscopy (TEM), Mossbauer spectroscopy, and vibrating sample magnetometry (VSM). Co-Mn ferrite powders that were fired at and above 773 K contained only a single spinel phase and behaved ferrimagnetically. Powders fired at 673 and 723 K had a spinel structure and were mixed paramagnetic and ferrimagnetic in nature. The magnetic behavior of Co-Mn ferrite powders fired at and above 873 K showed that an increase of the firing temperature yielded a decrease in the coercivity and an increase in the saturation magnetization. The maximum saturation magnetization and coercivity of Co-Mn ferrite powders were 66.7 emu/g and 1523 Oe, respectively, Mossbauer spectra of the powder fired at 923 K were taken at various temperatures ranging from 13 to 850 K. The iron ions.at both A (tetrahedral) and B (octahedral) sites were found to be in ferric high-spin states. The Nel temperature $T_N$ was found to be 850 $\pm$ 2 K. Debye temperatures far A and B sites were found to be $\Theta_A = 757 \pm$5K and $Theta_B = 282 \pm$5 K, respectively.

• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.6-12
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• 1998

Fe-N(iron-nitrogen) crystal phases were prepared by nitrogen ion implantation into $\alpha$-Fe foil with Plasma Source Ion Implantation (PSII). Ion implantation time of sample is treated 15 minutes(FeN15) and 30 minutes (FeN30). The nitrogen depth profiles measured by Auger electron spectroscopy (AES) were determined to be about 12000 $\AA$ and 4000 $\AA$ for the samples of FeN15 and FeN30, respectively. The results of vibrating sample magnetometer (VSM) show that the saturation magnetization of the samples of as-implanted FeN15 and FeN30 was higher than that of pure $\alpha$-Fe foil, which may be owing to $\alpha$'-$Fe_8N$ or $\alpha$"-$Fe_{16}N_2$ phases. Accordingly this study shows the possibility of the partial formation of $\alpha$' or $\alpha$" phase in iron nitrogen produced by PSII method.II method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.151-151
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• 2008

갈륨-질화물(GaN) 기반의 고속전자이동도 트랜지스터(high electron mobility transistor, HEMT)는 마이크로파 또는 밀리미터파 등과 같은 고주파 대역의 통신시스템에 널리 사용되는 전자소자로 각광받고 있다. GaN HEMT는 AlGaN/GaN 또는 AlGaN/InGaN/GaN 등과 같은 이종접합구조(heterostructure)로부터 발생하는 이차원 전자가스(two-dimensional electron gas, 2DEG) 채널을 이용하여 캐리어 구속효과(carrier confinement) 및 이동도의 향상이 가능하다. 또한 높은 2DEG 채널의 면밀도(sheet concentration) 와 전자의 포화 속도(saturation velocity)를 바탕으로 고출력 동작이 가능하여 차세대 이동통신용 전력 증폭기로 주목받고 있다. 그러나 이론적으로 우수한 특성과 달리, 실제 소자에서는 epi 성장시의 결함이나 전위, 표면 상태에 따른 2DEG 감소 등의 영향으로 이론보다 높은 누설 전류와 낮은 항복 전압 특성을 가진다. 특히, 기존의 GaN HEMT 구조에서는 Drain-Side Gate Edge에서의 전계 집중이 항복 전압 특성에 미치는 영향이 크다. 본 논문에서는 이러한 문제를 해결하기 위해 Trapezoidal Gate구조를 이용하여 Drain 방향의 Gate Edge가 완만히 변하는 구조를 제안하였다. 이를 위해 $ATLAS^{TM}$ 전산모사 프로그램을 이용하여 Trapezoidal Gate 구조를 구현하여 형태에 따른 전류-전압 특성 및 소자의 스위칭 특성 및 Gate 아래 채널층에 형성되는 Electric Field의 분산을 조사하고, 이를 바탕으로 고속 동작 및 높은 항복 전압을 갖는 AlGaN/GaN HEMT의 최적화된 구조를 제안하였다. 새로운 구조의 Gate를 적용한 AlGaN/GaN HEMT는 Gate edge에서의 전계를 분산시켜 피크 값이 감소되는 것을 확인하였다.

• Journal of Powder Materials
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• v.13 no.4 s.57
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• pp.285-289
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• 2006

Co-Fe-Ni-B-Si-Cr based amorphous strips containing nitrogen were manufactured via melt spinning, and then devitrified by crystallization treatment at the various annealing temperatures of $300^{\circ}C{\sim}540^{\circ}C$ for up to 30 minutes in an inert gas $(N_2)$ atmosphere. The microstructures were examined by using XRD and TEM and the magnetic properties were measured by using VSM and B-H meter. Among the alloys, the amorphous ribbons of $Co_{72.6}Fe_{9.8}Ni_{5.5}B_{2.4}Si_{7.1}Cr_{2.6}$ containing 121 ppm of nitrogen showed relatively high saturation magnetization. The alloy ribbons crystallized at $540^{\circ}C$ showed that the grain size of $Co_{72.6}Fe_{9.8}Ni_{5.5}B_{2.4}Si_{7.1}Cr_{2.6}$ alloy containing 121 ppm of nitrogen was about f nm, which exhibited paramagnetic behavior. The formation of nano-grain structure was attributed to the finely dispersed Fe4N particles and the solid-solutionized nitrogen atoms in the matrix. Accordingly, it can be concluded that the nano-grain structure of 5nm in size could reduce the core loss within the normally applied magnetic field of 300A/m at 10kHz.

• Archives of Pharmacal Research
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• v.14 no.3
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• pp.271-278
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• 1991

To investigate further whether the effects of the dihydropyridine (DHP) drugs on calcium channels are related to those of these drugs on muscarinic receptors, the binding characteristics of the DHP calcium channel agonist, Bay K 8644, on muscarinic receptors and calcium channels were compared to those of the DHP calcium channel antagonists, nicardipine and nimodipine in the dog cardiac sarcolemma. Bay K 8644, nicardipine and nimodipine inhibited the specific $[^3H]$QNB binding with $K_i$ values of 16.7\mu{M}$, 3.5\mu{M}$ and 15.5\mu{M}$ respectively. Saturation data of $[^3H]$QNB binding with $K_i$ VALUES OF 16.7\mu{M}$ 3.5\mu{M}$ and 15.5\mu{M}$ respectively. Saturation data of $[^3H]$QNB binding in the presence of these DHP drugs showed this inhibition to be competitive. Bay K 8644, like nicardipine and nimodipine, blocked the binding of $[^3H]$nitrendipine to the high affinity DHP binding sites, but atropine did not, indicating that the muscarinic receptors and the DHP binding sites m but atropine did not, indicating that the muscarinic receptors and the DHP bindings sites on calcium channels are distinct. The $K_i$ value of Bay K 8644 for the DHP binding sites was 4nM. Nicardipine and nimodipine $(K_i:0.1-0.2\;nM)$ were at least 20 times more potent than Bay K 8644 in inhibiting $[^3H]$ nitrendipine binding. Thus, the muscarinic receptors were about 4000 times less sensitive than thes high afinity DHP binding sites to Bay K 8644. These results suggest that the DHP calcium agonist Bay K 8644 binds directly to the muscarinic receptors but its interaction with the muscarinic receptors is not related to its binding to the DHP binding sites on calcium channels.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.11
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• pp.49-54
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• 1990

In this paper, a simple model is presented for the gate-voltage dependence of the parasitic resistance in MOSFETs with the lightly-doped drain (LDD) structure. At the LDD region located under the gate electrode, an accumulation layer is formed due to the gate voltage. The parasitic resistance of the source side LDD in the channel is treated as a parallel combination of the resistance of the accumulation layer and that of the bulk LDD, which is approximated as a spreading resistance from the end of the channel inversion layer to the ${n^+}$/LDD junction boundary. Also the effects of doping gradients at the junction are discussed. As result of the model, the LDD resistance decreases with increasing the gate voltage at the linear regime, and increase quasi-linearly with the gate voltage at the saturation regime, considering th velocity saturation both in the channel and in the LDD region. The results are in good agreement with experimental data reported by others.

• The Journal of Engineering Geology
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• v.12 no.4
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• pp.379-394
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• 2002

This study was initiated to identify groundwater quality and contamination at present in the 'A' section of Seoul Metropolitan Subway. Groundwater samples were collected at 21 boreholes along the 'A' section and appeared to show mainly $Ca-HCO_3$ type. In 20 samples, concentration of $SO_4$, Cd, Pb, Fe, Mn, Al, F and $NO_3-N$ were higher than those of Korean drinking water quality standards. From chemical data and saturation Indices, contaminant sources of individual chemical elements were inferred to be buried wastes and surface sediments over the study area. The result of factor analysis suggested that the pollution factor should account for about 47% of data variation.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.26 no.4B
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• pp.421-426
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• 2006

The effect of initial concentration of ammonium ion ($N_0$) and active nitrifiers ($X_0$) on nitrification was examined by continuous monitoring of the ammonium removal rate. The concentration of the active nitrifiers in the culture sludge, measured by the oxygen uptake rate (OUR), was found to be 42.8% of the culture sludge. Experiments were carried out under different ratios of $N_0/X_0$, viz., 0.025 to 0.493. The results from this study show that the oxidation rate was similar under the same $N_0/X_0$ ratio despite different initial concentration of ammonium ion ($N_0$) and active nitrifiers ($X_0$). Moreover, the Contois kinetic expression which includes biomass concentration, was found to describe the mechanism behind nitrification process. The ammonium oxidation rate ($q_{Nmax}$) and half saturation constant per unit activated nitrifiers ($K_N{^{\prime}}$) were theoretically determined using the Contois expression. These values were found to be 4.32 gN/gVSS/day and 0.013 gN/gVSS respectively.