• Journal of The Korean Astronomical Society
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• v.37 no.4
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• pp.285-288
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• 2004

Near-infrared imaging photometry supplemented by optical spectroscopy and narrow-band imaging of the H II region Sh 2-128 and its environment are presented. This region contains a developed H II region and the neighboring compact H II region S 128N associated with a pair of water maser sources. Midway between these, the core of a CO cloud is located. The principal ionizing source of Sh 2-128 is an 07 star close to its center. A new spectroscopic distance of 9.4 kpc is derived, very similar to the kinematic distance to the nebula. This implies a galactocentric distance of 13.5 kpc and z = 550 pc. The region is optically thin with abundances close to those predicted by galactocentric gradients. The $JHK_s$ images show that S 128N contains several infrared point sources and nebular emission knots with large near-infrared excesses. One of the three red Ks knots coincides with the compact H II region. A few of the infrared-excess objects are close to known mid- and far-infrared emission peaks. Star counts in J and $K_s$ show the presence of a small cluster of B-type stars, mainly associated with S 128N. The $JHK_s$ photometric properties together with the characteristics of the other objects in the vicinity suggest that Sh 2-128 and S 128N constitute a single complex formed from the same molecular cloud, with ages ${\~}10^6$ and < $3 {\times} 10^5$ years respectively. No molecular hydrogen emission was detected at 2.12 ${\mu}m$. The origin of this remote star forming region is an open problem.

• Current Optics and Photonics
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• v.4 no.4
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• pp.380-390
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• 2020

In this study, the traditional electron-blocking layer (EBL) in (In,Ga)N/GaN light-emitting diodes is replaced by a circular EBL that is the same size as the n-pad. The three-dimensional (3D) nonlinear Poisson, drift-diffusion, and continuity equations are adopted to simulate current transport in the LED and its characteristics. The results indicate that the local carrier-density distribution obtained for the circular EBL design is more uniform than that for the traditional EBL design. This improves the uniformity of local radiative recombination and local internal quantum efficiency (IQE) at high injection levels, which leads to a higher lumped IQE and lower efficiency droop. With the circular EBL, the lumped IQE is higher in the outer active region and lower in the active region under the n-pad. Since most emissions from the active region under the n-pad are absorbed by the n-pad, obviously, an LED with a circular EBL will have a higher external quantum efficiency (EQE). The results also show that this LED works at lower applied voltages.

• Journal of the Korean Institute of Telematics and Electronics
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• v.21 no.1
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• pp.62-70
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• 1984

N+NPP+ HLEBSF (high low emitter back surface field) solar cells which have N+N high low junction in the emitter as well as N+PP+ BSF cells were designed and fabricated by using <111> oriented P type Si wafers with the resistivity of 10$\Omega$/$\textrm{cm}^2$ and the thickness of 13-15 mil. Physical parameters (impurity concentration, thickness) at each region of N+PP+ and N+NPP+ cell were made equally through same masks and simultaneous process except N region of HLEBSF cell to investigate the high low emitter junction effect for efficiency improvement. Under the light intensity of 100 mW/$\textrm{cm}^2$, total area (active area) conversion efficiency were typically 10.94% (12.16%) for N+PP+ BSF cells and 12.07% (13.41%) for N+N PP+ cells. Efficiency improvement of N+NPP+ cell which has high low emitter Junction structure is resulted from the suppression of emitter recombination current and the increasement of open circuit voltage (Voc) and short circuit current (Ish) by removing heavy doping effects occurring in N+ emitter region.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.7 s.172
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• pp.19-26
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• 2005

The objective of this study is to investigate the influence of process parameters, such as power of laser, cutting speed of laser and material thickness, on the practical cutting region and the kerfwidth fer the case of cutting of CSP IN sheet using high power Nd:YAC laser in continuous wave(CW) mode. In order to obtain the practical cutting region and the relationship between process parameters on the kerfwidth, several laser cutting experiments are carried out. The effective heat input is introduced to consider the influence of power and cutting speed of laser on the kerfwidth together. From the results of experiments, the allowable cutting region and the relationship between the effective heat input and kerfwidth fur the case of cutting of CSP 1N sheet using high power CW Nd:YAG laser have been obtained to improve the dimensionalaccuracyofthecutarea.

• Publications of The Korean Astronomical Society
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• v.11 no.1
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• pp.75-90
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• 1996

The vertical distribution of HCN, $HC_3N$ and $C_2N_2$ have been determined from a sequence of Voyager 1 IRIS limb tangent measurements over Titan's north polar region. This sequence yields gas distributions with ${\sim}200\;km$ altitude resolution over the 50-400 km range. The derived mixing ratios of HCN, $HC_3N$ and $C_2N_2$ are $5{\times}10^{-7}$, $7{\times}10^{-8}$ and $8{\times}10^{-9}$, respectively, at 120 km with a factor of 3 uncertainty.

• Animal Systematics, Evolution and Diversity
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• v.13 no.2
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• pp.93-102
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• 1997

Two new marine tardigrade species, Batillipes longispinosus n. sp. and B. orientalis n. sp. are described on the basis of the specimens collected from the intertidal or shallow sublittoral sands of South Korea. Both the present species are characteristic in the absence of any caudal appendage throughout their life span, and bearing the long clava or cephalic appendages with the long spinous process on the femur of legs IV. B. longispinosus n. sp. most resembles B. tuvernatis Pollock, but is easily distinguished from it by the flattened caudal region and prominently developed spine of legs IV. B. orientalis n. sp. is much related to B. roscoffensis Kristensen, in having the wing-formed lateral body prohection between legs III and legs IV, the papillae on the head region, and the smooth caudal region, but discernible from it in the general body shape and the relatively longer spine of legs IV.

• Nuclear Engineering and Technology
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• v.50 no.1
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• pp.165-169
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• 2018

An assessment for determining N-16 activity concentrations during the operation condition of Bangladesh Atomic Energy Commission TRIGA Research Reactor was performed employing several governing equations. The radionuclide N-16 is a high energy (6.13 MeV) gamma emitter which is predominately created by the fast neutron interaction with O-16 present in the reactor core water. During reactor operation at different power level, the concentration of N-16 at the reactor bay region may increase causing radiation risk to the reactor operating personnel or the general public. Concerning the safety of the research reactor, the present study deals with the estimation of N-16 activity concentrations in the regions of reactor core, reactor tank, and reactor bay at different reactor power levels under natural convection cooling mode. The estimated N-16 activity concentration values with 500 kW reactor power at the reactor core region was $7.40{\times}10^5Bq/cm^3$ and at the bay region was $3.39{\times}10^5Bq/cm^3$. At 3 MW reactor power with active forced convection cooling mode, the N-16 activity concentration in the decay tank exit water was also determined, and the value was $4.14{\times}10^{-1}Bq/cm^3$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.233-236
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• 2002

Some measures are provided for the optimum design of specific on-resistance $R_{on}$ and breakdown-voltage $V_B$ of interdigitated CB (Composite Buffer) MOSFET, including introducing opposite type impurity into the P region near the $N_＋$contact, separating P region from N region with an oxide film, and a groove in the N region near the $P_＋$ contact. The new relationship between the $R_{on}$ and $V_B$, which proved by numerical device simulation, are more exact and minute than the qualitative results before.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.457-457
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• 2013

Current-voltage (I-V) measurements of crystalline silicon solar cells was conducted under dark conditions with the temperature range of 260 K~350 K. Using the calculation method, we extracted the crucial factors of ideality factor (n) and activation energy (Ea) to investigate the carrier conducting path in the space charge region (SCR) and the quasi-neutral region (QNR). Values of n were decreased with increasing temperature in both SCR and QNR. We also conformed that the value of Ea of SCR was larger than that of QNR about 0.4 eV. The temperature dependence of n indicates that the carrier conducting path is dominated by carrier recombination-generation in the SCR region than in the QNR region.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.5
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• pp.403-409
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• 2007

In this paper, effects of the trench angle($\theta$) on the breakdown voltage according to the process parameters of p-base region and doping concentrations of n-drift region in a Trench Gate IGBT (TIGBT) device were analyzed by computer simulation. Processes parameters used by variables are diffusion temperature, implant dose of p-base region and doping concentration of n-drift region, and aspects of breakdown voltage change with change of each parameter were examined. As diffusion temperature of the p-base region increases, depth of the p-base region increases and effect of the diffusion temperature on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 134.8 % in the case of high trench angle($90\;^{\circ}$). Moreover, as implant dose of the p-base region increases, doping concentration of the p-base region increases and effect of the implant dose on the breakdown voltage is very low in the case of small trench angle($45\;^{\circ}$) but that is increases 232.1 % in the case of high trench angle($90\;^{\circ}$). These phenomenons is why electric field concentrated in the trench is distributed to the p-base region as the diffusion temperature and implant dose of the p-base increase. However, effect of the doping concentration variation in the n-drift region on the breakdown voltage varies just 9.3 % as trench angle increases from $45\;^{\circ}$ to $90\;^{\circ}$. This is why magnitude of electric field concentrated in the trench changes, but direction of that doesn't change. In this paper, respective reasons were analyzed through the electric field concentration analysis by computer simulation.