• Title/Summary/Keyword: N defect

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A study on the CIGS thin film solar cells by Ga content (Ga 함유량에 따른 $Cu(In_{1-x}Ga_{x})Se_2$ 박막 태양전지에 관한 연구)

  • Song, Jin-Seob;Yoon, Jae-Ho;Ahn, Se-Jin;Yoon, Kyung-Hoon
    • 한국신재생에너지학회:학술대회논문집
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    • 2007.06a
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    • pp.339-342
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    • 2007
  • $Cu(In_{1-x}Ga_{x})Se_2$(CIGS)는 매우 큰 광흡수계수를 가지고 있으므로 박막형 태양전지의 광흡수층 재료로서 많은 연구가 진행되고 있다. 박막이 태양전지의 광흡수층으로 이용되기 위해서는 큰 결정크기와 평탄한 표면, 적당한 전기적 특성을 가져야 한다. 이러한 특성들은 CIGS 박막의 조성에 큰 영향을 받고 있는 것으로 보고되고 있다. 본 연구에서는 동시증발법을 이용하여 Cu/(In+Ga) 비를 0.9로 고정한 후 Ga 조성(Ga/(In+Ga)의 비 : 0.32, 0.49, 0.69, 0.8, 1)을 변화시켜 Wide band gap CIGS 박막태양전지를 만들었다. 기판은 soda line glass를 사용하였고 뒷면 전극으로는 Mo를 스퍼터링법으로 증착하였다. 또한 버퍼층으로는 기존에 쓰이고 있는 CdS를 CBD(Chemical Bath Deposition)법으로 층착시켰으며, 윈도우층으로는 i-ZnO/n-ZnO를 스파터링 법으로 층착하였다. 그리고 앞면전극으로는 Al을 E-beam 으로 증착하였다. 분석은 XRD, SEM, QE로 분석하였다. 위 실험에서 얻은 결과로는 Ga/(In+Ga)비가 증가할수록 Cu(In,Ga)Se2 박막은 회절 peak들이 큰 회절각으로 이동하였고, 이것은 Ga 원자와 In 원자의 원자반경의 차이에서 기인된 것으로 사료된다. 또한 Ga 조성이 증가할수록 단파장 쪽으로 이동하는 것을 볼 수 있으며, Voc가 증가하다가 에너지 밴드캡이 1.62 eV 이상에서는 Voc가 감소하는 것을 볼 수 있는데 이것은 Ga 조성이 증가할수록 에너지 밴드캡이 커지면서 defect level 이 존재하기 때문인 것으로 사료된다. Ga/(In+Ga)비가 1일 때의 변환효율은 8.5 %이고, Voc : 0.74 (V), Jsc : 17.2 ($mA/cm^{2}$), F.F : 66.6(%) 이다.

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Evaluation of Forward Osmosis (FO) Membrane Performances in a Non-Pressurized Membrane System (비가압식 막 공정을 통한 정삼투막 성능 평가)

  • Kim, Bongchul;Boo, Chanhee;Lee, Sangyoup;Hong, Seungkwan
    • Journal of Korean Society on Water Environment
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    • v.28 no.2
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    • pp.292-299
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    • 2012
  • The objective of this study is to develop a novel method for evaluating forward osmosis (FO) membrane performances using a non-pressurized FO system. Basic membrane performance parameters including water (A) and solute (B) permeability coefficients and unique parameter for FO membrane such as the support layer structural parameter (S) were determined in two FO modes (i.e., active layer faces feed solution (AL-FS) and active layer faces draw solution (AL-DS)). Futhermore, these parameters were compared with those determined in a pressurized reverse osmosis (RO) system. Theoretical water flux was calculated by employing these parameters to a model that accounts for the effects of both internal and external concentration polarization. Water flux from FO experiment was compared to theoretical water fluxes for assessing the reliability of those parameters determined in three different operation modes (i.e., AL-FS FO, AL-DS FO, and RO modes). It is demonstrated that FO membrane performance parameters can be accurately measured in non-pressurized FO mode. Specifically, membrane performance parameters determined in AL-DS FO mode most accurately predict FO water flux. This implies that the evaluation of FO membrane performances should be performed in non-pressurized FO mode, which can prevent membrane compaction and/or defect and more precisely reflect FO operation conditions.

Gas Permeation Characteristics of Silica Membrane Prepared by Ultrasonic Spray Pyrolysis (초음파 분무 열분해법에 의해 합성한 실리카 막의 기체 투과 특성)

  • Lee Kew-Ho;Youn Min-Young;Park Sang-Jin;Lee Dong-Wook;Sea Bongkuk
    • Membrane Journal
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    • v.15 no.2
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    • pp.105-113
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    • 2005
  • Silica membranes were prepared on a porous metal sheet by ultrasonic spray pyrolysis method for gas separation at high temperatures. In order to improve the permselectivity, silica was deposited in the sol-gel derived $silica/\gamma-alumina$ intermediate layer by pyrolysis of tetraethyl orthosilicate (TEOS) at 873 K. The pyrolysis with forced cross flow through the porous wall of the support was very effective in plugging mesopores, Knudsen diffusion regime, that were left unplugged in the membranes. At permeation temperature of 523 K, the silica/alumina composite membrane showed $H_2/N_2$ and water/methanol selectivity as high as 17 and 16, respectively, by molecular sieve effect.

Growth and Effect of Thermal Annealing for CuInse2 Single Crystal Thin Film by Hot Wall Epitaxy (Hot Wall Epitaxy (HWE)법에 의한 CuInse2 단결정 박막 성장과 열처리 효과)

  • Lee Gyungou;Hong Kwangjoon
    • Korean Journal of Materials Research
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    • v.14 no.11
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    • pp.755-763
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    • 2004
  • A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.

Defect Structure and Electrical Conduction Mechanism of Manganese Oxide-Titanium Dioxide (산화망간-이산화티탄계의 결함구조 및 전기전도메카니즘)

  • Keu Hong Kim;Jae Shi Choi
    • Journal of the Korean Chemical Society
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    • v.26 no.3
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    • pp.128-134
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    • 1982
  • The electrical conductivity of n-type polycrystalline MnOx-Ti$O_2$ system containing 0.40, 0.80, and 1.60 mol % of manganese oxide has been measured from 100 to 400$^{\circ}$C and 1100 to 1300$^{\circ}$C under oxygen partial pressures of$10^{-8}\;to\;10^{-1}$ atm. Plots of log conductivity vs. reciprocals of absolute temperature at constant $Po_2$'s are found to be linear with an inflection, and the activation energies obtained from the slopes appear to be an enough average 0.18eV for the extrinsic and 3.70eV for the intrinsic. The log $\sigma$ vs. log $Po_2$ are found to be linear at $Po_2$'s of $10^{-8}\;to\;10^{-1}$atm. The conductivity dependences on $Po_2$at the two temperature regions are closely approximated by $\sigma{\propto}$Po_2$-1}6$ for the extrinsic and $${\sigma}{\propto}Po_2^{-1}4}$$ for the intrinsic, respectively. The predominant defects are believed to be Vo-2e' and $Ti^3$${\cdot}$interstitial at the extrinsic and intrinsic. From the interpretations of conductivity dependences on temperature and$Po_2$ , the conduction mechanisms and possible band models are proposed.

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Novel analysis model for implant osseointegration using ectopic bone formation via the recombinant human bone morphogenetic protein-2/macroporous biphasic calcium phosphate block system in rats: a proof-of-concept study

  • Park, Jung-Chul;Lee, Jong-Bin;Daculsi, Guy;Oh, Sang-Yeop;Cho, Kyoo-Sung;Im, Gun-Il;Kim, Byung-Soo;Kim, Chang-Sung
    • Journal of Periodontal and Implant Science
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    • v.42 no.4
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    • pp.136-143
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    • 2012
  • Purpose: The osseointegration around titanium mini-implants installed in macroporous biphasic calcium phosphate (MBCP) blocks was evaluated after incubation with recombinant human bone morphogenetic protein-2 (rhBMP-2) in an ectopic subcutaneous rat model. Methods: Mini-implants (${\varphi}1.8{\times}12$ mm) were installed in MBCP blocks (bMBCPs, $4{\times}5{\times}15$ mm) loaded with rhBMP-2 at 0.1 mg/mL, and then implanted for 8 weeks into subcutaneous pockets of male Sprague-Dawley rats (n=10). A histomorphometric analysis was performed, and the bone-to-implant contact (BIC) and bone density were evaluated. Results: Significant osteoinductive activity was induced in the rhBMP-2/bMBCP group. The percentage of BIC was $41.23{\pm}4.13%$ (mean${\pm}$standard deviation), while bone density was $33.47{\pm}5.73%$. In contrast, no bone formation was observed in the bMBCP only group. Conclusions: This model represents a more standardized tool for analyzing osseointegration and bone healing along the implant surface and in bMBCPs that excludes various healing factors derived from selected animals and defect models.

A STUDY ON ACCURACY AND DIMENSIONAL STABILITY ACCORDING TO IMPRESS10N METHODS (인상채득방법과 방향에 따른 인상체의 정밀성과 체적 안정성에 관한 연구)

  • Lee, Jae-Young;Lim, Ju-Hwan;Cho, In-Ho
    • The Journal of Korean Academy of Prosthodontics
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    • v.37 no.5
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    • pp.567-580
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    • 1999
  • Accurate reproduction of intraoral tissue is essential in the fabrication of fixed prosthesis. This selection of impression material and method is very important. In this study, vinyl polysiloxane type impression material $Panasil^{(R)}$ was used. Three impression methods ; one-step technique, individual tray technique, and individual tooth tray technique using the vinyl polysiloxane type bite registration material $Futar^{(R)}$ Occlusion, were used to take horizontal and vertical impression. Improved stone models were fabricated. The amount of occlusal surface discrepaneies, interabutment distance discrepancies, amount of marginal defect were evaluated with the $X-PLAN360d^{(R)}$ and photoscanning. The results were as follows. 1. There was no significant difference in occlusal surface according to the directions and techniques of impression taking. 2. There was no significant difference in interabutment distance discrepancies according to the directions and techniques of impression taking 3. There was no significant difference in marginal discrepancies according to the direction of impression taking but there was significant difference between one-step technique and individual tray technique, individual tooth tray technique (P<0.05). Taken together, these results suggest that individual tray technique and individual tooth tray technique are more accurate for impression taking than one-step technique.

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Measurement of Energy bands of the MgO Layer in AC-PDPs

  • Jeoung, S.J.;Lee, H.J.;Son, C.G.;Kim, J.H.;Park, E.Y.;Hong, Y.J.;You, N.L.;Lee, S.B.;Han, Y.G.;Jeoung, S.H.;Song, K.B.;Moon, M.W.;Oh, P.Y.;Choi, E.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.906-909
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    • 2006
  • The secondary electron emission coefficient $({\gamma})$ of the cathode is an important factor for improving the discharge characteristics of AC-PDPs because of its close relationship to discharge voltage. In AC-PDPs, MgO is most widely used as a surface protective layer. In this experimental, we have investigated the electronic structure of the energy band structure of the MgO layer responsible for the high ${\gamma}$. The MgO layers have been deposited by electron beam evaporation method, where the $O_2$ partial pressures have been varied as 0, $5.2{\times}10^{-5}$ torr, $1.0{\times}10^{-4}$ torr, and $4.1{\times}10^{-4}$ torr, in this experiment. It is noted that work function that is energy gap between surface and first defect level of MgO layer has the lowest value for the highest O2 partial pressure of $4.1^{\ast}10^{-4}$ Torr.

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Effects of Oxygen Annealing on the Structural Properties and Dielectric Properties Of Bi4Ti3O12 Thin Films (Bi4Ti3O12 박막의 구조적 특성과 유전 특성에 미치는 산소 열처리 효과)

  • Cha, Yu-Jeong;Seong, Tae-Geun;Nahm, Sahn;Jeong, Young-Hun;Lee, Young-Jin;Paik, Jong-Hoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.4
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    • pp.290-296
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    • 2009
  • $Bi_{4}Ti_{3}O_{12}$ (BiT) thin films were grown on the Pt/Ti/$SiO_2$/si substrate using a metal organic decomposition (MOD) method. Effects of oxygen annealing on the structural properties and dielectric properties of the BiT thin films were investigated. The BiT films were well developed when rapid thermal annealed at $>500^{\circ}C$ in oxygen ambient. For the film annealed at $700^{\circ}C$, no crystalline phase was observed under oxygen free annealing atmosphere while its crystallinity was significantly enhanced as the oxygen pressure increased. The BiT film also exhibited a smooth surface with defect free grains. A high dielectric constant and a low dielectric loss were achieved satisfactory in the frequency range from 75 kHz to 1 MHz. Especially, the BiT film, annealed at $700^{\circ}C$ and 10 torr oxygen pressure, showed good dielectric properties: dielectric constant of 51 and dielectric loss of 0.2 % at 100 kHz. Its leakage current was also considerably improved, being as $0.62\;nA/cm^2$ at 1 V. Therefore, it is considered that the oxygen annealing has effects on an enhancement of crystallinity and dielectric properties of the BiT films.

Mode II Fracture Toughness of Hybrid FRCs

  • Abou El-Mal, H.S.S.;Sherbini, A.S.;Sallam, H.E.M.
    • International Journal of Concrete Structures and Materials
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    • v.9 no.4
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    • pp.475-486
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    • 2015
  • Mode II fracture toughness ($K_{IIc}$) of fiber reinforced concrete (FRC) has been widely investigated under various patterns of test specimen geometries. Most of these studies were focused on single type fiber reinforced concrete. There is a lack in such studies for hybrid fiber reinforced concrete. In the current study, an experimental investigation of evaluating mode II fracture toughness ($K_{IIc}$) of hybrid fiber embedded in high strength concrete matrix has been reported. Three different types of fibers; namely steel (S), glass (G), and polypropylene (PP) fibers were mixed together in four hybridization patterns (S/G), (S/PP), (G/PP), (S/G/PP) with constant cumulative volume fraction ($V_f$) of 1.5 %. The concrete matrix properties were kept the same for all hybrid FRC patterns. In an attempt to estimate a fairly accepted value of fracture toughness $K_{IIc}$, four testing geometries and loading types are employed in this investigation. Three different ratios of notch depth to specimen width (a/w) 0.3, 0.4, and 0.5 were implemented in this study. Mode II fracture toughness of concrete $K_{IIc}$ was found to decrease with the increment of a/w ratio for all concretes and test geometries. Mode II fracture toughness $K_{IIc}$ was sensitive to the hybridization patterns of fiber. The (S/PP) hybridization pattern showed higher values than all other patterns, while the (S/G/PP) showed insignificant enhancement on mode II fracture toughness ($K_{IIc}$). The four point shear test set up reflected the lowest values of mode II fracture toughness $K_{IIc}$ of concrete. The non damage defect concept proved that, double edge notch prism test setup is the most reliable test to measure pure mode II of concrete.