• Journal of the Korean Association of Oral and Maxillofacial Surgeons
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• 제49권5호
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• pp.292-296
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• 2023

Generally, if the size of a lip cancer defect exceeds 30% of the lower lip, a local flap or free flap is recommended. However, defects up to 50% of the lower lip in size have been reconstructed successfully by primary closure without a local flap or free flap. In one case, an 80-year-old male farmer who had smoked for more than 50 years presented with squamous cell carcinoma of the lower lip and underwent mass resection and supraomohyoid neck dissection. The defect accounted for almost 2/3 of the lower lip and was repaired by primary closure with V-shaped resection. Biopsy results confirmed pT2N0cM0 stage II disease with clear margins. In another case, a 68-year-old male also presented with squamous cell carcinoma of the lower lip and underwent mass resection. The defect accounted for about half the size of the lower lip but was repaired by primary closure with V-shaped resection. Both patients experienced no discomfort while eating or speaking and were satisfied with the cosmetic and functional outcomes with no evidence of recurrence. Thus, direct closure can be considered even in large lower lip cancers.

• Journal of the Microelectronics and Packaging Society
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• 제7권4호
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• pp.7-15
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• 2000

The purpose of this work is to evaluate the solderahility and characteristics of solder joints. Bridge defect of solder joint was examined in natural atmosphere and $N_2$ condition. Consequently, wettability was excellent for each of Sn-Pb plated Cu specimen, Sn plated Cu specimen, and Cu polished in $N_2$ condition. The wetting time in $N_2$ condition was shorter than that of natural atmosphere condition, showing the decreasing values of about 0.2~0.45 seconds. The max. wetting force under the $N_2$ condition was more increasing that of natural atmosphere condition, showing the increasing values of about 1.8~2.8 N. With the result of wetting balance test, the wetting time ($t_2$) and wetting farce according to increasing amount of $N_2$ from 10 1/min to 30 1/min, the wetting time ($t_2$) was reduced about 0.25 second and wetting force was increased about 2.3 N. In non-cleaning flux, when $N_2$ gas is applied, it is compensated to decrease of wettability. In the case of using the $N_2$ gas, the wettability was improved. The reason for improving wettability is due to preventing the formation of dross. The generation rate of bridge in $N_2$ condition decreased than that of natural atmosphere, and when the specimen had a fine pitch, the rate of bridge defects was considerably decreased in $N_2$ condition, showing the decreasing rate of 25~75%.

• Transactions of the Korean Society of Mechanical Engineers
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• 제10권1호
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• pp.78-85
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• 1986

This study has been made to investigate Behavior of the fatigue crack propagation for the purpose of taking into consideration the fatigue behavior Which initiate and propagate in tip of defect of the defected specimens, Which Contain the micro-hole or micro-slit. Especially, the specimens have been conducted with high-freguency heat treatment of 850.deg. C, 1050.deg. C to consider strength elevation of defected specimens. The results of this study are as follow; (1) The case of the same in the length of crack, the fatigue crack propagation rate of the micro-slit is always faster than that of micre-hole. But, the first step of the fatigue crack propagation it is not always so. (2) Fatigue crack propagation rate of specimens with micro-slit or micro-hole which have been treated with high-frequency heat treatment satisfy the following formula between the fatigue crack propagation rate and nominal stress; dl/dN .var..sigma.$^{m}$ *l$^{n}$ .

• Proceedings of the KIEE Conference
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1587-1589
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• 2002

Photovoltaics is considered as one of the most promising new energy technology, because its energy source is omni present, pollution-free and inexhaustive. It is agreed that these solar cells must be thin film type because thin film process is cost-efficive in the fact that it uses much less raw materials and can be continuous. The defect chalcopyrite material $CuIn_3Se_5$ has been identified as playing an essential role in efficient photovoltaic action in $CuInSe_2$-based devicesm It has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe2. Because the most efficient cells consist of the $Cu(In,Ga)Se_2$ quarternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite $Cu(In,Ga)_3Se_5$ may help us better understand the junction phenomena in such devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제21권4호
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• pp.348-353
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• 2008

Most of the high voltage insulation systems, such as the power cable joint having hetero interface, are composed of more than two different insulators to improve insulating performance. The partial discharge(PD) in these hetero interface is expected to affect the total insulation performance. Thus, it is important to study electrical properties on these interfaces. This study described the influence of copper and semiconductive substance defects on $\Phi$-q-n distribution between the interface of the model cable joints to classify PD source. PD was sequentially detected for 600 cycles of the applied voltage. The K-means cluster analysis has been analyzed to investigate the $\Phi$-q-n distribution. The skewness-kurtosis(Sk-Ku) plot from K-means clustering results was defined to quantify cluster distribution and classify distribution patterns. The Sk-Ku plot is composed of skewness and kurtosis along abscissa and ordinate which indicate the asymmetry and the sharpness of distribution. As a result of the Sk-Ku plot, it was confirmed that the data was distributed in 1st 2nd and 3rd quadrant at copper foreign substance defect, but in case of semiconductive foreign substance, the data was distributed in 2nd quadrant only.

• Journal of the Mineralogical Society of Korea
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• 제17권4호
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• pp.291-297
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• 2004

Phosphorus is one of the interesting impurities in diamond, because it produces n-type semiconducting character. The character has been studied with spectroscopic methods as well as electric method, but most of the diamond used for these studies are conducted by the CVD (Chemical Vapor Deposition) diamond. In this study, we synthesized the phosphorus doped HPHT (High Pressure and High Temperature) diamond and investigated the characterization using CL spectroscopy to determine how phosphorus incorporated. As a result, the undocumented peaks of 248 and 603 nm as well as the reported peaks (239 nm, 240 ～ 270 nm) at the previous studies were observed. These luminescence peaks may be due to the complex defect of phosphorus with other impurities such as boron and nitrogen.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권2호
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• pp.54-57
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• 2005

Photoreflectance (PR) has been measured to investigate the characterization of the Si$_{3}$N$_{4}$Al$_{0.21}$ Ga$_{0.79}$As/GaAs and Al$_{0.21}$Ga$_{0.79}$As/GaAs heterostructures. In the PR spectrum, the caplayer thickness was 170 nm and Si$_{3}$N$_{4}$ was utilized as the capping material. The C peak is confirmed as the carbon defect with residual impurity originating from the growth process. After annealing, in the presence of the Si$_{2}$N$_{4}$ cap layer, band gap energy was low shifted. This result indicates that the Si$_{3}$N$_{4}$ cap layer controlled evaporation of the As atom.

• Journal of Advanced Marine Engineering and Technology
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• 제19권2호
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• pp.36-46
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• 1995

In this paper, fatigue crack propagation behaviors were investigated experimentally for the materials, carbon steel forgings (SF45A, SF50A, SF60A) which are used in the marine propeller shaft. The results obtained are as follows: The number of cycles required to grow crack length 1.30mm from microcrack initiation was about 60% of the total fatigue life. Fatigue crack propagation rate was expressed by the equation d(2a)/dN_B 2a/$N_f$ and the result was agreed well with the experimented data. And the equation d(2a)/dN=$C{\sigma}_a^m(2a)^n$ was evaluated also. Obtained material property m and n are 3~5 and 1-1.5 respectably, and the result was reasonably agreed to the data obtained from experiments.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.124-127
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• 2004

W/n-GaN Schottky diodes were irradiated with $^{60}Co\;{\gamma}-rays$ to doses up to 315Mrad. The barrier height obtained from current-voltage (I-V) measurements showed minimal change from its estimated initial value of ${\sim}0.4eV$ over this dose range, though both forward and reverse I-V characteristics show evidence of defect center introduction at doses as low as 150 Mrad. Post irradiation annealing at $500^{\circ}C$ increased the reverse leakage current, suggesting migration and complexing of defects. The W/GaN interface is stable to high dose of ${\gamma}-rays$, but Au/Ti overlayers employed for reducing contact sheet resistance suffer from adhesion problems at the highest doses.

• Current Photovoltaic Research
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• 제3권4호
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• pp.107-111
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• 2015

Current characteristic curve of an illuminated solar cell was used to determine its reverse saturation current density ($J_0$), ideality factor (n) and resistances, by using numerical diode simulation. High efficiency amorphous silicon, heterojunction crystalline Si (HIT), plastic and organic-inorganic halide perovskite solar cell shows n=3.27 for a-Si and n=2.14 for improved HIT cell as high and low n respectively, while the perovskite and plastic cells show n=2.56 and 2.57 respectively. The $J_0$ of these cells remain within $7.1{\times}10^{-7}$ and $1.79{\times}10^{-8}A/cm^2$ for poorer HIT and improved perovskite solar cell respectively.