• Title/Summary/Keyword: N $O_{}$ x/

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The Study of Color and Hardness of TiN Thin Film by UBM Sputtering System (UBM Sputtering System에 의한 TiN막의 색상과 경도에 관한 연구)

  • Park, Moon Chan;Lee, Jong Geun;Joo, Kyung Bok
    • Journal of Korean Ophthalmic Optics Society
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    • v.14 no.1
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    • pp.57-62
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    • 2009
  • Purpose: TiN films were deposited on sus304 by unbalanced magnetron sputtering system which was designed and developed as unbalancing the strength of the magnets in the magnetron electrode. The color and hardness of deposited TiN films was investigated. Methods: The cross sections of deposited films on silicon wafer were observed by SEM to measure the thickness of the films, the components of the surface of the films were identified by XPS, the components of the inner parts of the films were observed by XPS depth profiling. XPS high resolution scans and curve fittings of deposited films were performed for quantitative chemical analysis, Vickers micro hardness measurements of deposited films were performed with a nano indenter equipment. Results: The colors of deposited films gradually changed from light gold to dark gold, light violet, and indigo color with increasing of the thickness. It could be seen that the color change come from the composite change of three compound,$TiO_{x}N_{y}$, $TiO_2$, TiN. Especially, the composite change of$TiO_{x}N_{y}$ compound was thought to affect the color change with respect to thickness. Conclusions: Deposited films had lower than the value of general TiN film in Vickers hardness, which was caused by mixing three TiN, $TiO_2$,$TiO_{x}N_{y}$ compound in the deposited films. The increasing and decreasing of micro hardness with respect to thickness was thought to have something to do with the composite of TiN in the films.

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RINGS WITH A FINITE NUMBER OF ORBITS UNDER THE REGULAR ACTION

  • Han, Juncheol;Park, Sangwon
    • Journal of the Korean Mathematical Society
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    • v.51 no.4
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    • pp.655-663
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    • 2014
  • Let R be a ring with identity, X(R) the set of all nonzero, non-units of R and G(R) the group of all units of R. We show that for a matrix ring $M_n(D)$, $n{\geq}2$, if a, b are singular matrices of the same rank, then ${\mid}o_{\ell}(a){\mid}={\mid}o_{\ell}(b){\mid}$, where $o_{\ell}(a)$ and $o_{\ell}(b)$ are the orbits of a and b, respectively, under the left regular action. We also show that for a semisimple Artinian ring R such that $X(R){\neq}{\emptyset}$, $$R{{\sim_=}}{\oplus}^m_{i=1}M_n_i(D_i)$$, with $D_i$ infinite division rings of the same cardinalities or R is isomorphic to the ring of $2{\times}2$ matrices over a finite field if and only if ${\mid}o_{\ell}(x){\mid}={\mid}o_{\ell}(y){\mid}$ for all $x,y{\in}X(R)$.

Depletion Kinetics of the Ground State CrO Generated from the Reaction of Unsaturated Cr(CO)x with O2 and N2O

  • Son, H.S.;Ku, J.K.
    • Bulletin of the Korean Chemical Society
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    • v.23 no.2
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    • pp.184-188
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    • 2002
  • Unsaturated $Cr(CO)_x(1{\leq}x{\leq}5)$molecules were generated in the gas phase from photolysis of $Cr(CO)_6$vapor in He using an unfocussed weak UV laser pulse and their reactions with $O_2$ and $N_2O$ have been studied. The formation and disappearance of the ground state CrO molecules were identified by monitoring laser-induced fluorescence(LIF) intensities vs delay time between the photolysis and probe pulses. The photolysis laser power dependence as well as the delay time dependence of LIF intensities from the CrO orange system showed different behavior as those from ground state Cr atoms, suggesting that the ground state CrO molecules were generated from the reaction between $O_2/N_2O$ and photo-fragments of $Cr(CO)_6$ by one photon absorption. The depletion rate constants for the ground state CrO by $O_2$ and $N_2O$ are $5.4{\pm}0.2{\times}10^{-11}$ and $6.5{\pm}0.4{\times}10^{-12}cm^3molecule^{-1}s^{-1}$, respectively.

Change in Properties of (Ba1-xLax)Fe3+1-tFe4+tO3-y System Depending on Heat Treatment Conditions

  • Lee, Eun-Seok;Lee, Seo-Jin
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.6
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    • pp.311-315
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    • 2017
  • The perovskite system $(Ba^{2+}{_{1-x}}La^{3+}{_x})Fe^{3+}{_{1-t}}Fe^{4+}{_t}O_{3-y}$ (y = (1 - x --t)/2) having a composition of x = 0.0, 0.1, 0.2, and 0.3 showedean increase in $Fe^{4+}$ mole ratios with an increase in oxygen partial pressure ($N_2{\rightarrow}air{\rightarrow}O_2$), and with an increasefin s, the $Fe^{3+}$ quantity decreased and oxygen content (3-y value) increased. For each N sampls heat-treated in $N_2$ gas, a considerable weight gain, i.e.g a steadynincrease if oxygen content, was observed in the TGA data on the cooling process. The conductivity values at a constant temperature were in the order of $N_2$$O_2$; the respective log ${\sigma}$ values (${\Omega}^{-1}{\cdot}cm^{-1}$) at 323 K of the BL0 sample were -5.75 (BL0-N), -3.39 (BL0-A), and -0.53 (BL0-O). The mixed valencies of $Fe^{3+}$ and $Fe^{4+}$ ions in each sample were also confirmed by both the oxidation curve above 350 mV and the cathodic reduction curve below 200 mV from cyclic voltammetry.

X-Ray Absorption Spectroscopic Study of 120 MeV $Ag^{9+}$ Ion-Irradiated N-Doped ZnO Thin Films

  • Gautam, Sanjeev;Lim, Weon Cheol;Kang, Hee Kyung;Lee, Ki Soo;Song, Jaebong;Song, Jonghan;Asokan, K.;Chae, Keun Hwa
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.02a
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    • pp.315-315
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    • 2013
  • We report the electronic structure modification in the swift heavy ion (SHI) irradiated N-doped ZnO thin films prepared by RF sputtering from ZnO target in different ratio of Ar/$N_2$ gas mixture using highly pure $N_2$ gas. The different N-ZnO thin lms were then irradiated with 120 MeV Ag ion beam with different doses ranging from $1{\times}10^{11}$ to $5{\times}10^{12}$ ions/$cm^2$ and characterized by XRD and near edge X-ray absorption ne structure (NEXAFS) at N and O K-edges. The NEXAFS measurements provide direct evidence of O 2p and Zn 3d orbital hybridization and also the bonding of N ions with Zn and O ions. The minimum value of resistivity of $790{\Omega}cm$, a Hall mobility of $22cm^2V^-1s^-1$ and the carrier concentration of $3.6{\times}10^{14}cm^{-3}$ were yielded at 75% $N_2$. X-ray diffraction (XRD) measurements revealed that N-doped ZnO films had the preferential orientation of (002) plane for all samples, while crystallinity start decreasing at 32.5% $N_2$. The average crystallite size varies from 5.7 to 8.2 nm for 75% and then decreases to 7.8 nm for 80% $Ar:N_2$ ratio.

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Complex Impedance Characteristics and Electrical Conductivity of ${Nd_{1-x}}{Sr_x}{Ga_{1-x}}{Mg_x}{O_{3-\delta}$ Electrolytes (${Nd_{1-x}}{Sr_x}{Ga_{1-x}}{Mg_x}{O_{3-\delta}$ 고체전해질의 복소임피던스 특성과 전기전도도)

  • ;Allan J. Jacobson
    • Journal of the Korean Ceramic Society
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    • v.38 no.4
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    • pp.325-330
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    • 2001
  • 고상반응법으로 이론 밀도의 약 97%의 소결 밀도를 갖는 N $d_{1-x}$S $r_{x}$G $a_{1-x}$M $g_{x}$ $O_{3{\delta}}$(x=0, 0.03, 0.07, 0.1) 고체전해질을 제조하였다. X선 회절 분석 결과, x=0.03일 때의 X선 회절도는 순수한 NdGa $O_3$와 같았으나, x=0.07, 0.1일 때에는 불순물이 나타났다. 교류 복소임피던스는 4$50^{\circ}C$~90$0^{\circ}C$의 온도 범위에서 공기 중에서 측정하였으며, 각 조성에 대하여 상호 비교 분석하기 위하여 복소비저항 스펙트럼으로 변환하여 해석하였다. 전기전도도는 N $d_{0.93}$S $r_{0.07}$G $a_{0.93}$M $g_{0.07}$ $O_{0.97}$(x=0.07) 시편이 90$0^{\circ}C$에서 6$\times$$10^{-3}$ S$cm^{-1}$ /로 가장 우수하였으며, 활성화 에너지는 저온 영역에서는 1 eV, 고온 영역에서는 0.74 eV이었다.다.

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GENERALIZATIONS OF NUMBER-THEORETIC SUMS

  • Kanasri, Narakorn Rompurk;Pornsurat, Patchara;Tongron, Yanapat
    • Communications of the Korean Mathematical Society
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    • v.34 no.4
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    • pp.1105-1115
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    • 2019
  • For positive integers n and k, let $S_k(n)$ and $S^{\prime}_k(n)$ be the sums of the elements in the finite sets {$x^k:1{\leq}x{\leq}n$, (x, n) = 1} and {$x^k:1{\leq}x{\leq}n/2$, (x, n) = 1}respectively. The formulae for both $S_k(n)$ and $S^{\prime}_k(n)$ are established. The explicit formulae when k = 1, 2, 3 are also given.

The effect of $Nd_2O_3$ addition on the microwave dielectric properties of the BSST ceramics (BSST계 세라믹스의 마이크로파 유전특성에 미치는 $Nd_2O_3$ 첨가 효과)

  • 박인길;류기원;배선기;이영희
    • Electrical & Electronic Materials
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    • v.9 no.5
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    • pp.439-444
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    • 1996
  • 0.15(B $a_{0.95}$ S $r_{0.05}$)O-0.15(S $m_{2(1-x}$/N $d_{2x}$) $O_{3}$-0.7Ti $O_{2}$(x=0-10[m/o]) ceramics were fabricated by mixed oxide method. Microwave dielectric properties were investigated with contents of N $d_{2}$ $O_{3}$. In the case of specimen with N $d_{2}$ $O_{3}$(6[m/o]), dielectric constant, quality factor and temperature coefficient of resonant frequency were 78.14, 2938(at 3[GHz]) and +14.19[ppm/.deg. C], respectively. By comparison its properties with undoped specimen, dielectric constant and quality factor were highly improved, but the temperature coefficient of resonant frequency was increased to positive value......

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MULTIPLE SOLUTIONS FOR A CLASS OF QUASILINEAR SCHRÖDINGER SYSTEM IN ℝN

  • Chen, Caisheng;Chen, Qiang
    • Bulletin of the Korean Mathematical Society
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    • v.53 no.6
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    • pp.1753-1769
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    • 2016
  • This paper is concerned with the quasilinear $Schr{\ddot{o}}dinger$ system $$(0.1)\;\{-{\Delta}u+a(x)u-{\Delta}(u^2)u=Fu(u,v)+h(x)\;x{\in}{\mathbb{R}}^N,\\-{\Delta}v+b(x)v-{\Delta}(v^2)v=Fv(u,v)+g(x)\;x{\in}{\mathbb{R}}^N,$$ where $N{\geq}3$. The potential functions $a(x),b(x){\in}L^{\infty}({\mathbb{R}}^N)$ are bounded in ${\mathbb{R}}^N$. By using mountain pass theorem and the Ekeland variational principle, we prove that there are at least two solutions to system (0.1).