• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.245-248
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• 2006

[ $Tb_{3-x}Bi_xFe_5O_{12}$ ] has been studied by x-ray diffraction (XRD), vibrating sample magnetometer, $M\"{o}ssbauer$ spectroscopy. The crystal structures were found to be a cubic garnet structure with space group Ia3d. The lattice constants increase linearly with increasing bismuth concentration. With increase of bismuth substitution, the $N\'{e}el$ temperature increases but the compensation temperature decreases. We have observed the negative magnetization in Bi-TbIG system which has not been reported in garnet systems. $M\"{o}ssbauer$ spectra were measured at various temperatures from 4.2 K to $N\'{e}el$ temperature. The isomer shifts at room temperature are ${\sim}0.26mm/s$ which is consistent with ferric state.

• Journal of the Korean Institute of Telematics and Electronics
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• v.16 no.4
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• pp.32-35
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• 1979

When photon was injected to SnO2- amorphous Sb S thin film -Sn structure through the window of SnO2, photo- voltaic effect was observed. With the energy change of photon, photovoltage had either positive or negative value This phenomenon was considered to be caused by formation of n-n heterojunction in SnO2 - Sb S structure and Schottky junction Sb S -Sn structure.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.1
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• pp.41-45
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• 2014

We have investigated the passivation property of $SiN_x$ and $SiO_2$ thin films formed using various process conditions for the application of crystalline Si solar cells. An increase in the thickness of $SiN_x$ deposited using plasma enhanced chemical vapor deposition (PECVD) led to the improvement of passivation quality. This could be associated with the passivation of Si dangling bonds by hydrogen atoms which were supplied during PECVD deposition. The $SiO_2$ thin films grown using dry oxidation process exhibited better passivation behavior than those using wet oxidation process, implying the dry oxidation process was more effective in the formation of high quality $SiO_2$ thin films. The relative effective life time gradually decreased with increasing dry oxidation temperature. Such a degradation of passivation behavior could be attributed to the increase in interface trap density caused by thermal damages.

• Journal of the Korean Ceramic Society
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• v.53 no.4
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• pp.463-467
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• 2016

$Si^{4+}-N^{3-}$ was incorporated into $Ce^{3+}-doped$ lutetium aluminum garnet ($Lu_{2.965}Ce_{0.035}Al_5O_{12}$, $LuAG:Ce^{3+}$) lattices, resulting in the formation of $Lu_{2.965}Ce_{0.035}Al_{5-x}Si_xO_{12-x}N_x$ [(Lu,Ce)AG:xSN]. For x = 0-0.25, the synthesized powders consisted of the LuAG single phase, and the lattice constant decreased owing to the smaller $Si^{4+}$ ions. However, for x > 0.25, a small amount of unknown impurity phases was observed, and the lattice constant increased. Under 450 nm excitation, the PL spectrum of $LuAG:Ce^{3+}$ exhibited the green band, peaking at 505 nm. The incorporation of $Si^{4+}-N^{3-}$ into the $Al^{3+}-O^{2-}$ sites of $LuAG:Ce^{3+}$ led to a red-shift of the emission peak wavelength from 505 to 570 nm with increasing x. Corresponding CIE chromaticity coordinates varied from the green to yellow regions. These behaviors were discussed based on the modification of the $5d^1$ split levels and crystal field surroundings of $Ce^{3+}$, which arose from the Ce-(O,N)8 bonds.

• Bulletin of the Korean Chemical Society
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• v.21 no.6
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• pp.583-587
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• 2000

Depletion kinetics of ground state FeO molecules by $0_2$, $N_2O$ and $N_2$ has been studied at room temperature. The ground state FeO molecules were generated by photolysis of a $Fe$(CO)_5$/M(O_2$, $N_2O)/He$ mixture using an unfocused weak UV laser beam. The formation of ground state FeO molecules was identified by a laser-induced fluorescence (LIF) method. The intensity distribution of those undisturbed rotational lines suggests that the rotational temperature of the ground state FeO molecules is lower than room temperature. The LIF intensities of FeO molecules at different partial pressures of $0_2$, $N_2O$ and $N_2$ were monitored as a function of the time delay between the photolysis and probe laser pulses to obtain the depletion rate constants for the ground state FeO. They were 1.7+ 0.2x $10^{-12}$, 4.8 $\pm0.4$ x $10^{-12}$, and $1.4\pm$ 0.2x $10^{-12}cm^3$molecule^{-1}s^{-1}$$ by $0_2$, $N_20$, and $N_2$, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.518-521
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• 2003

Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_{n}$O$_{x}$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method. During the deposition, 90 mol% ozone gas of typical pressure of 1~9 $\times$ 10$^{-5}$ Torr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.grown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.259-260
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• 2006

$Bi_2Sr_2Ca_{n-1}Cu_nO_x$ superconducting thin films have been fabricated by atomic layer-by-layer deposition using IBS(Ion Beam Sputtering) method During the deposition, 90 mol% ozone gas of typical pressure of $1{\sim}9{\times}10^{-5}$ T orr are supplied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Journal of the Korean Statistical Society
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• v.25 no.1
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• pp.153-159
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• 1996

Sums of independent random variables $S_n = X_1 + X_ + cdots + X_n$ are considered, where the X$_{n}$ are chosen according to a stationary process of distributions. Given the time t .geq. O, let N (t) be the number of indices n for which O < $S_n$ $\geq$ t. In this set up we prove that N (t)/t converges almost surely and in $L^1$ as t longrightarrow $\infty$, which generalizes classical renewal theorem.m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.370-370
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• 2010

The effects of adding higher-valence impurities on the bipolar resistive switching characteristics of Pt/$NiO_{1+x}$/TiN MIM stacks and physical properties were investigated. $NiO_{1+x}$ films with 14% W deposited at 20% oxygen partial pressure exhibited the bipolar resistance switching characteristics in Pt/$NiO_{1+x}$/TiN MIM stacks, while $NiO_{1+x}$ films with 8.2% W show unipolar resistance switching behavior. The relationship of W-doping and the crystallinity was studied by X-ray diffraction. The metallic Ni contents and $WO_x$ binding states with W amount was investigated by XPS. Our result showed that the metallic Ni, $WO_x$ binding states, and crystallinity in $NiO_{1+x}$ played an important role on the bipolar resistive switching.

• Applied Chemistry for Engineering
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• v.5 no.1
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• pp.24-29
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• 1994

The zeolite X was prepared from the Korean natural clinoptilolite, which contains some mordenite. Thermal treatment removed the clinoptilolite structure from the ore remaining mordenite. The natural clinoptilolites dealuminated with 2N-8N HCI solution and/or thermal treatment were mixed with NaCl, $NaAlO_2$ and NaOH, and reacted to zeolites X at $95^{\circ}C$ for 12~36 hrs. Maximum yield of NaX was obtained for the reactant mixture of 25 gr of natural zeolite acidtreated with 8 N HCI, together with 3.5g NaCl, 8g $NaAlO_2$ and 50 ml of 6N NaOH at $95^{\circ}C$, for 24 hrs.