• Journal of the Korean Society for Industrial and Applied Mathematics
• /
• 제11권1호
• /
• pp.13-30
• /
• 2007

In this paper we study the numerical solutions of the stochastic functional differential equations of the following form $$du(x,\;t)\;=\;f(x,\;t,\;u_t)dt\;+\;g(x,\;t,\;u_t)dB(t),\;t\;>\;0$$ with initial data $u(x,\;0)\;=\;u_0(x)\;=\;{\xi}\;{\in}\;L^p_{F_0}\;([-{\tau},0];\;R^n)$. Here $x\;{\in}\;R^n$, ($R^n$ is the ${\nu}\;-\;dimenional$ Euclidean space), $f\;:\;C([-{\tau},\;0];\;R^n)\;{\times}\;R^{{\nu}+1}\;{\rightarrow}\;R^n,\;g\;:\;C([-{\tau},\;0];\;R^n)\;{\times}\;R^{{\nu}+1}\;{\rightarrow}\;R^{n{\times}m},\;u(x,\;t)\;{\in}\;R^n$ for each $t,\;u_t\;=\;u(x,\;t\;+\;{\theta})\;:\;-{\tau}\;{\leq}\;{\theta}\;{\leq}\;0\;{\in}\;C([-{\tau},\;0];\;R^n)$, and B(t) is an m-dimensional Brownian motion.

• 열처리공학회지
• /
• 제4권1호
• /
• pp.19-29
• /
• 1991

This study was to investigate the influence of the substrate hardness on the hardness and adhesion of TiN thin film deposited by R.F. PACVD. Although the substrate hardness changed, chemical composition, stoichiometry and structure of TiN thin film did not change. ISE index was 1.96-1.99 for the substrate and was 1.57-1.79 for TiN thin film. And ISE index of TiN thin film was inverse proportion to the substrate hardness. When the substrate hardness was low, TiN thin film had many cracks around the indentation. But as the substrate hardness increased, TiN thin film had a few cracks and the deformation was limited within indentation. In having measured the adhesion of TiN thin film by SAT, the critical load (Lc) generally increased as the substrate hardness decreased.

• 대한수학회논문집
• /
• 제16권4호
• /
• pp.621-626
• /
• 2001

Let { $A_{>o}$ t= exp(M log t)} $_{t}$ be a dilation group where M is a real n$\times$n matrix whose eigenvalues has strictly positive real part, and let $\rho$be an $A_{t}$ -homogeneous distance function defined on ( $R^{n}$ ). Suppose that K is a function defined on ( $R^{n}$ ) such that /K(x)/$\leq$ (No Abstract.see full/text) for a decreasing function defined on (t) on R+ satisfying where wo(x)=│log│log (x)ll. For f$\in$ $L_{1}$ ( $R^{n}$ ), define f(x)=sup t>0 Kt*f(x)=t-v K(Al/tx) and v is the trace of M. Then we show that \ulcorner is a bounded operator of $L_{-{1}( $R^{n}$ ) into $L^1$,$\infty$( $R^{n}$).

• 원예과학기술지
• /
• 제33권6호
• /
• pp.845-853
• /
• 2015

The objective of this study was to predict the timing of nitrogen (N) demand through analyzing chlorophyll fluorescence (ChlF), soil-plant analysis development (SPAD), and normalized difference vegetation index (NDVI), which are positively correlated with foliar N concentration in star cluster (Pentas lanceolata). The plants were grown in potting soil under optimal conditions for 30 d, followed by weekly irrigation with five concentrations (0, 4, 8, 16, and 24 mM) of N for an additional 30 d. These five N application levels corresponded to leaf N concentrations of 2.62, 3.48, 4.00, 4.23, and 4.69%, respectively. We measured 13 morphological and physiological parameters, as well as the responses of these parameters to various N-fertilizer treatments. The general increases in Dickson's quality index (DQI), above-ground dry weight (DW), total DW, flowering rate, ${\Delta}F/Fm$', and qP in response to treatment with 0 to 8 mM N were similar to those of SPAD, NDVI, and Fv/Fm. Consistent and strong correlations ($R^2$= 0.60 to 0.85) were observed between leaf N concentration (%) and SPAD, NDVI, ${\Delta}F/Fm$', and above-ground DW. Validation of leaf S PAD, NDVI, and ${\Delta}F/Fm$' revealed that these vegetation indices are accurate predictors of leaf N concentration that can be used for non-destructive estimation of the proper timing for N-solution irrigation of P. lanceolata. Moreover, irrigation with 8 mM N-fertilizer i s recommended w hen leaf N concentration, SPAD, NVDI, and ${\Delta}F/Fm$' ratios are reduced from their saturation values of 4.00, 50.68, 0.64, and 0.137%, respectively.

• 한국전기전자재료학회논문지
• /
• 제18권4호
• /
• pp.375-380
• /
• 2005

CF₄ molecular gas is used in most of semiconductor manufacture processing and SF/sub 6/ molecular gas is widely used in industrial of insulation field. but both of gases have defect in global warming. C₃F/sub 8/ gas has large attachment cross-section more than these gases, moreover GWP, life-time and price of C₃F/sub 8/ gas is lower than them, therefor it is important to calculate transport coefficients of C₃F/sub 8/ gas like electron drift velocity, ionization coefficient, attachment coefficient, effective ionization coefficient and critical E/N. The aim of this study is to get these transport coefficients for imformation of the insulation strength and efficiency of etching process. In this paper, we calculated the electron drift velocity (W) in pure C₃F/sub 8/ molecular gas over the range of E/N=0.1∼250 Td at the temperature was 300 K and gas pressure was 1 Torr by the Boltzmann equation method. The results of this paper can be important data to present characteristic of gas for plasma etching and insulation, specially critical E/N is a data to evaluate insulation strength of a gas.

• 대한수학회지
• /
• 제25권2호
• /
• pp.199-206
• /
• 1988

• 대한화장품학회지
• /
• 제1권1호
• /
• pp.5-9
• /
• 1970

• 충청수학회지
• /
• 제8권1호
• /
• pp.111-117
• /
• 1995

A function $f:{\Omega}{\rightarrow}X$ is called intrinsically-separable valued if there exists $E{\in}{\Sigma}$ with ${\mu}(E)=0$ such that $f({\Omega}-E)$ is a separable in X. For a given Dunford integrable function $f:{\Omega}{\rightarrow}X$ and a weakly compact operator T, we show that if f is intrinsically-separable valued, then f is Pettis integrable, and if there exists a sequence ($f_n$) of Dunford integrable and intrinsically-separable valued functions from ${\Omega}$ into X such that for each $x^*{\in}X^*$, $x^*f_n{\rightarrow}x^*f$ a.e., then f is Pettis integrable. We show that a function f is Pettis integrable if and only if for each $E{\in}{\Sigma}$, F(E) is $weak^*$-continuous on $B_{X*}$ if and only if for each $E{\in}{\Sigma}$, $M=\{x^*{\in}X^*:F(E)(x^*)=O\}$ is $weak^*$-closed.

• 대한수학회논문집
• /
• 제10권3호
• /
• pp.681-688
• /
• 1995

Fixed-point theory has an extension to coincidences. For a pair of maps $f,g:X_1 \to X_2$, a coincidence of f and g is a point $x \in X_1$ such that $f(x) = g(x)$, and $Coin(f,g) = {x \in X_1 $\mid$ f(x) = g(x)}$ is the coincidence set of f and g. The Nielsen coincidence number N(f,g) and the Lefschetz coincidence number L(f,g) are used to estimate the cardinality of Coin(f,g). The aspherical manifolds whose fundamental group has a normal solvable subgroup of finite index is called infrasolvmanifolds. We show that if $M_1,M_2$ are compact connected orientable infrasolvmanifolds, then $N(f,g) \geq $\mid$L(f,g)$\mid$$ for every $f,g : M_1 \to M_2$.

• 한국자기학회:학술대회 개요집
• /
• 한국자기학회 1991년도 춘계연구발표회 논문개요집
• /
• pp.73-74
• /
• 1991

The films with ferromagnetic fine particles dispersed in nonmagnetic matrix, such as $Fe-Al_2O_3$ and Fe-Cu have been studied for use of magnetic recording medium, optically device and sensor. Their magnetic properties depend strongly on structural parameter such as size and volume fraction of ferromagnetic particles. Fe-Cr-Ni alloy sputtered films also have microstructure with ferromagnetic -- b.c.c phase and nonmagnetic f.c.c phase grains. Magnetic properties of these films depend strongly on such a unique structure. These are depend on the ratio in volume of ferromagnetic particles to nonmagnetic ones $V_F/V_N$, the saturation magnetization Ms increased with increase of $V_F/V_N$. The coercivity Hc of the as-deposited films took maximum value of about 200 Oe at adequate $V_F/V_N$ and then Ms and Squareness S were 500 emu/cc and 0.5, respectively.(omitted)