• Journal of the Korean Institute of Telematics and Electronics
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• v.3 no.2
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• pp.2-9
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• 1966

fabricating processes of silicon planar n-p-n transistors are described. These processes include materical preparation, oxidation, photoresist, boron diffusion, phosphorous diffusion, and aluminium metalizing. Boron layer has been diffused in n type silicon from B2O3-SiO2 source using the box method, Phosporous layer has been diffused from P2O5-SiO2 source with the same method. The planar diodes are also fabricated by the processes described above.

• Journal of the Korean Chemical Society
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• v.55 no.2
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• pp.199-203
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• 2011

The title one-dimensional hydrogen-bonded coordination compound $[Cu^{II}(C_{13}H_{17}N_3OBr)(C_8H_5O_4)]{\cdot}2H_2O.CH_3OH$ has been synthesized and characterized by single crystal X-ray diffraction study. The monomeric unit contains a square-planar $Cu^{II}$ centre. The four coordination sites are occupied by a tridentate anionic Schiff base ligand (4-bromo-2-[(2-piperazin-1-yl-ethylimino)-methyl]-phenol) which furnishes an $N_2O$-donor set, with the fourth position being occupied by the oxygen atom of an adjacent terephthalate unit. Two adjacent neutral molecules are linked through intermolecular N-H---O and O-H---N hydrogen bonds and generate a dimeric pair. Each dimeric pair is connected with each other via discrete water and methanol molecules by hydrogen bonding to form a one-dimensional supramolecular network.

• Journal of IKEEE
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• v.27 no.4
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• pp.399-404
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• 2023

In this paper, we analyzed the current path in the O/N/O (Oxide/Nitride/Oxide) structure of 3D NAND Flash memory and in the O/N/F (Oxide/Nitride/Ferroelectric) structure where the blocking oxide is replaced by a ferroelectric. In the O/N/O structure, when V_read is applied, a current path is formed on the backside of the channel due to the E-fields of neighboring cells. In contrast, the O/N/F structure exhibits a current path formed on the front side due to the polarization of the ferroelectric material, causing electrons to move toward the channel front. Additionally, we performed an examination of device characteristics considering channel thickness and channel length. The analysis results showed that the front electron current density in the O/N/F structure increased by 2.8 times compared to the O/N/O structure, and the front electron current density ratio of the O/N/F structure was 17.7% higher. Therefore, the front current path is formed more effectively in the O/N/F structure than in the O/N/O structure.

• Korean Journal of Plant Resources
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• v.10 no.2
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• pp.145-150
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• 1997

To find out the optimum fertilizer level for onion, early maturing cultivar Fechongjoseng, experiment with four fertilizer levels was conducted of the field of the paddy and upland in Muan and Changyeong from Sep.1993 to Feb.1995. The yield character of onion was higher and rate of the rottenness was lowest under the treatment of $N-P_2O_5-K_2O$=28-9.5-23Kg/10a in the soil of paddy and upland field of Muan area. But the onion yield was excellent and rate of the rottenness was lowest under the treatments, $N-P_2O_5-K_2O$=21-19-17.3Kg/10a, in the soil of paddy field and $N-P_2O_5-K_2O$=28-9.5-23Kg/10a, in the soil of upland field of Changyeong area.

• Journal of Advanced Marine Engineering and Technology
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• v.33 no.2
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• pp.267-271
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• 2009

The Marine Environment Protection Committee(MEPC) which is the IMO's specialized committee on marine pollution related matters deals with GHG related issues to discuss and compile possible approaches on technical, operational and market based measures to address GHG emissions from ships. The nitrous oxide($N_2O$) which remains generally in the atmosphere for around 114 years is one of the green house gases. The global warming potential of $N_2O$ is 310 times than $CO_2$ in the given period 100 years. It seems that the $N_2O$ formation is influenced by the nitrogen compound contained in the fuel which is named as "Fuel N" during the combustion process or the NOx, SOx and $H_2O$ through the emission gases before exhausted into the atmosphere. This paper has carried out an experimental study of the $N_2O$ concentration profiles by the change of $NH_3$ flows in the planner premixed combustion with using $C_3H_8$ and air.

• Journal of the Korean Chemical Society
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• v.47 no.3
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• pp.283-291
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• 2003

The purpose of this research was to analyze and improve the experiment, observing the color change under compression on the equilibrium of $2NO_2\;{\rightleftarrow}\;N_2O_4$ system, described in high school and general chemistry textbooks. Chemistry textbooks described that the reddish brown color got lighter on the compression of $2NO_2\;{\rightleftarrow}\;N_2O_4$ system. This misinterpretation was due to no consideration of $NO_2$ concentration increase by the volume decrease. In order to propose a correct interpretation, the changes of color and temperature on compression were quantitatively measured and compared with theoretical studies. In addition, an improved experiment, excluding the effect of $NO_2$ concentration increase, was proposed to observe only the color change of the net equilibrium shift.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.667-671
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• 1998

The photoluminescence (pL) characteristics of hydride vapor phase epiyaxy (HVPE) grown GaN films on $MgAl_{2}O_{4}$ substrate were investigated with several growth conditions. The GaN films on $MgAl_{2}O_{4}$ substrate is autodoped with Mg atoms which thermally out-diffused from substrate lead to a PL characteristics of impurity doped ones. The Mg-related emission band intensity decreased with growth temperature may due to the evaporation of Mg atoms at the GaN film surfaces. and it also decreased with GaN film thicknesses. We can estimate the diffusion coefficient of Mg atoms in GaN under the consideration of diffusion phenomena between two infinite solids lead to a value of D= 2$\times$$lO^{-10}\textrm{cm}^2/sec.

• Bulletin of the Korean Chemical Society
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• v.33 no.4
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• pp.1269-1274
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• 2012

A visible light responsive N, Mo co-doped $TiO_2$ were prepared by sol-gel method. X-ray diffraction, TEM, $N_2$ adsorption, UV-vis spectroscopy, photoluminescence, and X-ray photoelectron spectroscopy were used to characterize the prepared $TiO_2$ samples. Doping restrained the phase transformation from anatase to rutile and reduced the particle sizes. The band gap was much narrowed after N, Mo co-doping. The photocatalytic activities were tested in the degradation of an aqueous solution of a reactive dyestuff, methylene blue, under visible light. The photocatalytic activities of doped $TiO_2$ were much higher than that of neat $TiO_2$. The photocatalytic stability of N, Mo co-doped $TiO_2$ was much better than that of N doped $TiO_2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.7
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• pp.1-6
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• 2000

In this study, the effects of the addition of $N_2$ gas into the $Cl_2$ (90)/Ar(10) gas mixture, which has been proposed as the optimized etching gas combination, for etching of platinum was performed. The selectivity of platinum film to $SiO_2$ film etch mask increased with the addition of $N_2$ gas, and etch profile over 75 $^{\circ}$ could be obtained when 20 % additive $N_2$ gas was added. These phenomena were interpreted as the results of a formation of blocking layer such as Si-N or Si-O-N on the $SiO_2$ mask. The maximum etch rate of Pt film and selectivity of Pt to $SiO_2$ are 1425 ${\AA}$/min and 1.71, respectively. These improvements were considered to be due to the formation of more volatile compounds such as Pt-N or Pt-N-Cl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.54-57
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• 2003

[ $HfO_xN_y$ ] films using a hafnium tertiary-butoxide $(Hf[OC(CH_3)_3]_4)$ in plasma and $N_2$ ambient were prepared to improve the thermal stability of hafnium-based gate dielectrics. A 10% nitrogen incorporation into $HfO_2$ films showed a smooth surface morphology and a crystallization temperature as high as $200^{\circ}C$ compared with pure $HfO_2$ films. The $TaN/HfO_xN_y/Si$ capacitors showed a stable capacitance-voltage characteristics even at post-metal annealing temperature of $1000^{\circ}C$ in $N_2$ ambient and a constant value of 1.6 nm EOT (equivalent oxide thickness) irrespective of an increase of PDA and PMA temperature. Leakage current densities of $HfO_xN_y$ capacitors annealed at PDA temperature of 800 and $900^{\circ}C$, respectively were approximately one order of magnitude lower than that of $HfO_2$ capacitors.