• Title/Summary/Keyword: Multiple voltages

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Contact resistance increment of no-insulation REBCO magnet during a quench

  • Im, Chaemin;Cho, Mincheol;Bang, Jeseok;Kim, Jaemin;Hahn, Seungyong
    • Progress in Superconductivity and Cryogenics
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    • v.21 no.1
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    • pp.31-35
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    • 2019
  • The lumped-parameter circuit model for a no- insulation (NI) high temperature superconductor (HTS) magnet has been well understood after many experimental and analytic studies over a decade. It successfully explains the non-linear charging behaviors of NI magnets. Yet, recently, multiple groups reported that the post-quench electromechanical behaviors of an NI HTS magnet may not be well explained by the lumped circuit model. The characteristic resistance of an NI magnet is one of the key parameters to characterize the so-called "NI behaviors" of an NI magnet and recently a few groups reported a potential that the characteristic resistance of an NI magnet may substantially vary during a quench. This paper deals with this issue, the increment of contact resistance of the no-insulation (NI) REBCO magnet during a quench and its impact on the post-quench behaviors. A 7 T 78 mm NI REBCO magnet that was previously built by the MIT Francis Bitter Magnet Laboratory was chosen for our simulation to investigate the increment of contact resistance to better duplicate the post-quench coil voltages in the simulation. The simulation results showed that using the contact resistance value measured in the liquid nitrogen test, the magnitude of the current through the coil must be much greater than the critical current. This indicates that the value of the contact resistance should increase sharply after the quench occurs, depending on the lumped circuit model.

Performance Evaluation of an Electrometer for Quality Control and Dosimetry in Radiation Therapy (방사선 치료의 정도관리 및 선량측정에 이용되는 전리계의 성능평가)

  • Kim, Chang-Seon;Kim, Chul-Yong;Park, Myung-Sun
    • Progress in Medical Physics
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    • v.11 no.2
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    • pp.123-130
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    • 2000
  • The performance of an electrometer directly affects on the accuracy and precision in radiation dosimetry. This study is to list of the quality control for maintaining performance and to perform evaluation tests of an electrometer. Performance tests selected include proper polarizing voltages, warm-up and equalization time, leakages, long-term stability, linearity, and effect of ambient conditions. An electrometer connected with a rigid stem ionization chamber was evaluated with a Strontium-90 check device. Bias voltage was measured directly on the input socket. Equalization time is the time required for reaching threshold of charged state after the power is on or the bias voltage is changed. Pre- and post-signal leakages are defined as the accumulation of signal with no exposure and after exposure, respectively. Over three months period, the electrometer's long-term stability was measured by comparison of the temperature-pressure corrected readings. Linearity was expressed as the deviation of readings from multiple short exposures from one continuous exposure. Effect of ambient conditions was expressed as the zero drift of the electrometer over 17-34$^{\circ}C$ temperature ranges. For two nominal values, 300 and 500 volts, measured voltages were lower by 2.5 and 5.8%, respectively. The warm-up time, 20 minutes, was longer than the lamp time by 9 minutes and the equalization time was less than 1 minute. Without exposure, the zero-drift was 0.002 scale-unit in 15 minutes and the leakage after 10 minutes exposure was minimal. The IQ-4 was stable over 99.4% for three-month periods. Deviation from the linearity was 0.9% for measurement scale, 0.000-9.991. Over 17-34$^{\circ}C$ temperature range, the zero-drift was minimal, less than 0.2%. For a clinically-used electrometer, a list for the basic peformance evaluations is proposed. By running this program, the measurement error using an electrometer can be reduced and in turn the improvement in accuracy and precision of radiation dosimetry can be achieved.

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The Calculation Method of Shielding Coefficient of Neutral Line against an Induced Voltage by an Aerial Power Distribution Line Reflecting the Principle of Earth Return Current (가공 배전선의 전자유도전압에 대하여 대지 귀로전류 원리를 반영한 중성선 차폐계수 계산 방법)

  • Lee, Sangmu
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.17 no.7
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    • pp.86-91
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    • 2016
  • To solve the problem of the excessive error caused by using a single value for the shielding effect of the neutral line of an electric power distribution line in the calculation of the voltage it induces in a telecommunication line, the general expression that was previously developed to reflect the mechanism of voltage induction by a distribution line with multiple grounds is employed in this paper to represent the relationship between the leakage current rates at each ground pole. In this way, the formula for calculating the shielding effect of the neutral line can be factorized against the unbalanced current flowing in the neutral line, which is the root current of induction. This shielding coefficient of the neutral line is not constant, but can vary when a range of induced voltages is generated in the whole power distribution line. The calculation method developed herein reduces the error rate to one tenth of that of the existing calculation result in the case of overestimation and increases it by 14% in the case of underestimation.

The impact of substrate bias on the Z-RAM characteristics in n-channel junctionless MuGFETs (기판 전압이 n-채널 무접합 MuGFET 의 Z-RAM 특성에 미치는 영향)

  • Lee, Seung-Min;Park, Jong-Tae
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.7
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    • pp.1657-1662
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    • 2014
  • In this paper, the impact of substrate bias($V_{BS}$) on the zero capacitor RAM(Z-RAM) in n-channel junctionless multiple gate MOSFET(MuGFET) has been analyzed experimentally. Junctionless transistors with fin width of 50nm and 1 fin exhibits a memory window of 0.34V and a sensing margin of $1.8{\times}10^4$ at $V_{DS}=3.5V$ and $V_{BS}=0V$. As the positive $V_{BS}$ is applied, the memory window and sensing margin were improved due to an increase of impact ionization. When $V_{BS}$ is increased from 0V to 10V, not only the memory window is increased from 0.34V to 0.96V but also sensing margin is increased slightly. The sensitivity of memory window with different $V_{BS}$ in junctionless transistor was larger than that of inversion-mode transistor. A retention time of junctionless transistor is better than that of inversion-mode transistor due to low Gate Induced Drain Leakage(GIDL) current. To evaluate the device reliability of Z-RAM, the shifts in the Set/Reset voltages and current were measured.

Prognostic Significance of Left Axis Deviation in Acute Heart Failure Patients with Left Bundle branch block: an Analysis from the Korean Acute Heart Failure (KorAHF) Registry

  • Choi, Ki Hong;Han, Seongwook;Lee, Ga Yeon;Choi, Jin-Oh;Jeon, Eun-Seok;Lee, Hae-Young;Lee, Sang Eun;Kim, Jae-Joong;Chae, Shung Chull;Baek, Sang Hong;Kang, Seok-Min;Choi, Dong-Ju;Yoo, Byung-Su;Kim, Kye Hun;Cho, Myeong-Chan;Park, Hyun-Young;Oh, Byung-Hee
    • Korean Circulation Journal
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    • v.48 no.11
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    • pp.1002-1011
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    • 2018
  • Background and Objectives: The prognostic impact of left axis deviation (LAD) on clinical outcomes in acute heart failure syndrome (AHFS) with left bundle branch block (LBBB) is unknown. The aim of this study was to determine the prognostic significance of axis deviation in acute heart failure patients with LBBB. Methods: Between March 2011 and February 2014, 292 consecutive AHFS patients with LBBB were recruited from 10 tertiary university hospitals. They were divided into groups with no LAD (n=189) or with LAD (n=103) groups according to QRS axis <-30 degree. The primary outcome was all-cause mortality. Results: The median follow-up duration was 24 months. On multivariate analysis, the rate of all-cause death did not significantly differ between the normal axis and LAD groups (39.7% vs. 46.6%, adjusted hazard ratio, 1.01; 95% confidence interval, 0.66, 1.53; p=0.97). However, on the multiple linear regression analysis to evaluate the predictors of the left ventricular ejection fraction (LVEF), presence of LAD significantly predicted a worse LVEF (adjusted beta, -3.25; 95% confidence interval, -5.82, -0.67; p=0.01). Right ventricle (RV) dilatation was defined as at least 2 of 3 electrocardiographic criteria (late R in lead aVR, low voltages in limb leads, and R/S ratio <1 in lead V5) and was more frequent in the LAD group than in the normal axis group (p<0.001). Conclusions: Among the AHFS with LBBB patients, LAD did not predict mortality, but it could be used as a significant predictor of worse LVEF and RV dilatation (Trial registry at KorAHF registry, ClinicalTrial.gov, NCT01389843).