• Economic and Environmental Geology
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• v.52 no.6
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• pp.555-560
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• 2019

One-dimensional shear wave velocity structure of North Korea is constrained using short (2-sec) to long period (30-sec) Rayleigh waves generated from four seismic events in China. Rayleigh waves are well recorded at the five broadband seismic stations (BRD, SNU, CHNB, YKB, KSA) which are located near to the border between North and South Korea. Group velocities of fundamental-mode Rayleigh waves are estimated with the Multiple Filter Analysis and refined by using the Phase Matched Filter. Average group velocity dispersion curve ranging from 2.9 to 3.2 km/s, is inverted to constrain the shear wave velocity structures. Relatively low group velocity dispersion curves along the path between the events to BRD at period from 4 to 6 seconds may correspond to the sedimentary sequence of the West Korea Bay Basin (WKBB) in the Yellow Sea. The low velocity zone in deep layers (14-20 km) may be related to the deep sedimentary structure in Pyongnam basin. The fast shear wave velocity structure from the surface to the depth of 14 km is consistent with the existence of metamorphic rocks and igneous bodies in Nangrim massif and Pyongnam basin.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.191.2-191.2
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• 2015

Details of carrier dynamics in self-assembled quantum dots (QDs) with a particular attention to nonradiative processes are not only interesting for fundamental physics, but it is also relevant to performance of optoelectronic devices and the exploitation of nanocrystals in practical applications. In general, the possible processes in such systems can be considered as radiative relaxation, carrier transfer between dots of different dimensions, Auger nonradiactive scattering, thermal escape from the dot, and trapping in surface and/or defects states. Authors of recent studies have proposed a mechanism for the carrier dynamics of time-resolved photoluminescence CdTe (a type II-VI QDs) systems. This mechanism involves the activation of phonons mediated by electron-phonon interactions. Confinement of both electrons and holes is strongly dependent on the thermal escape process, which can include multi-longitudinal optical phonon absorption resulting from carriers trapped in QD surface defects. Furthermore, the discrete quantized energies in the QD density of states (1S, 2S, 1P, etc.) arise mainly from ${\delta}$-functions in the QDs, which are related to different orbitals. Multiple discrete transitions between well separated energy states may play a critical role in carrier dynamics at low temperature when the thermal escape processes is not available. The decay time in QD structures slightly increases with temperature due to the redistribution of the QDs into discrete levels. Among II-VI QDs, wide-gap CdZnTe QD structures characterized by large excitonic binding energies are of great interest because of their potential use in optoelectronic devices that operate in the green spectral range. Furthermore, CdZnTe layers have emerged as excellent candidates for possible fabrication of ferroelectric non-volatile flash memory. In this study, we investigated the optical properties of CdZnTe/ZnTe QDs on Si substrate grown using molecular beam epitaxy. Time-resolved and temperature-dependent PL measurements were carried out in order to investigate the temperature-dependent carrier dynamics and the activation energy of CdZnTe/ZnTe QDs on Si substrate.

• Korean Journal of Materials Research
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• v.19 no.2
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• pp.90-94
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• 2009

The development of low-k materials is essential for modern semiconductor processes to reduce the cross-talk, signal delay and capacitance between multiple layers. The effect of the $CH_4$ concentration on the formation of SiOC(-H) films and their dielectric characteristics were investigated. SiOC(-H) thin films were deposited on Si(100)/$SiO_2$/Ti/Pt substrates by plasma-enhanced chemical vapor deposition (PECVD) with $SiH_4$, $CO_2$ and $CH_4$ gas mixtures. After the deposition, the SiOC(-H) thin films were annealed in an Ar atmosphere using rapid thermal annealing (RTA) for 30min. The electrical properties of the SiOC(-H) films were then measured using an impedance analyzer. The dielectric constant decreased as the $CH_4$ concentration of low-k SiOC(-H) thin film increased. The decrease in the dielectric constant was explained in terms of the decrease of the ionic polarization due to the increase of the relative carbon content. The spectrum via Fourier transform infrared (FT-IR) spectroscopy showed a variety of bonding configurations, including Si-O-Si, H-Si-O, Si-$(CH_3)_2$, Si-$CH_3$ and $CH_x$ in the absorbance mode over the range from 650 to $4000\;cm^{-1}$. The results showed that dielectric properties with different $CH_4$ concentrations are closely related to the (Si-$CH_3$)/[(Si-$CH_3$)+(Si-O)] ratio.

• Proceedings of the Korean Society of Developmental Biology Conference
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• 2003.10a
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• pp.60-60
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• 2003

Embryonic stem (ES) cells have property of self-renewal and can differentiate into the cells of all three primary germ layers. Recently, many growth factors, alteration of culture condition and gene modifications have been used to differentiate mouse and human ES cells into specific cell types. This study was performed to evaluate the differentiation protocol for human ES cells to the endodermal lineage cells. Human ES cells (Miz-hESl ) were cultured on STO feeder layer mitotically inactivated with mitemycin C, and embryoid bodies (EBs) were formed by suspension culture. Differentiation protocol of EBs consisted of three steps: stage I, culture of EBs for 6 days with ITSFn medium; stage II, culture of stage I cells for 8 days with N2 medium ; stage III, culture of stage II cells for 22 days with N2 medium. mRNA levels of the endodermal lineage differentiation genes were analyzed by semi- quantitative RT-PCR. The Oct-4 expression, a marker of the pluripotent state, was detected in undifferentiated human ES cells but progressively decreased after EBs formation. Differentiating human ES cells expressed marker genes of endodermal differentiation and pancreatic islet cells. GATA4, a-fetoprotein, Glut-2, and Ngn3 were expressed in all stages. However, albumin and insulin were expressed in only stage III cells. The human ES cells can be differentiated into endodermal lineage cells by multiple step culture system using various supplements. We are developing the more effective protocols for guided differentiation of human ES cells.

• ALGAE
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• v.25 no.4
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• pp.187-195
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• 2010

The genus Rosenvingea is well known in the tropics. Four species have been reported from Pacific Mexico: R. floridana, R. antillarum, R. intricata and R. sanctae-crucis. We collected a plant (Boca del Cielo, Chiapas) that we identified as Rosenvingea orientalis, a species not previously reported from Pacific Mexico. We were able to characterize the life cycle of this species for the first time in laboratory culture. It reproduced exclusively by plurilocular sporangia (plurangia). The mature plants were up to 6 cm long with cylindrical to compressed fronds (to 2 mm wide) with dichotomous branches in the upper half of the thallus. The medulla was hollow with 2-3 layers of large inflated colourless cells at the periphery. The cortex was comprised of 1 layer of small cells, each with a single chloroplast and pyrenoid. Linear plurangial sori with phaeophycean hairs formed along the mature fronds. Zoospore germlings developed into prostrate filamentous systems, each with a single phaeophycean hair that gave rise to a single erect shoot with multiple hairs arising near the tip. Molecular phylogeny using the psaA gene placed this isolate within the Scytosiphonaceae. It does not confirm the exact identification of R. orientalis, although its placement close to other Rosenvingea sequences was confirmed and morphological evidence supports its placement in R. orientalis. Our culture investigations indicated that it has an asexual life cycle. Further collections are needed to resolve the full generic and specific relationships of Rosenvingea and related taxa, and their reproductive patterns.

• Ocean and Polar Research
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• v.28 no.4
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• pp.475-484
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• 2006

In order to reveal the vertical variation of physical properties in deep-sea sediments, deep-sea sediment cores were collected at 78 stations using a multiple corer in the KR5 area, one of the Korea contract areas for manganese nodule exploration, located in the northeast equatorial Pacific. Based on the color of sediments, sampled sediment cores were characterized into three lithologic units (unit 1,2, and 3). In all sediment cores, three units appear systematically; unit 1 lies at the top of cores and unit 2 and/or unit 3 appear to underlie unit 1 or alternate with unit 3. Unit 1 layer from the top of cores shows dark grayish brown to dark brown with mean thickness of 10.2cm. Unit 2 and 3 layers show very dark brown to black color and yellowish brown to brown color, respectively. According to the physical properties of the deep-sea sediment cores, sediment column can be divided into three sections. Section A $(0{\sim}15cm)$ in subbottom depth consists mostly of unit 1. Mean values of physical properties of section B $(15{\sim}30cm)$ in subbottom depth are similar to those of section C (>30 cm) in subbottom depth. However, the physical properties of section B were more variable than those of section C because of the high activity of bioturbation in section B. These results will provide valuable information for selecting suitable sites for mining manganese nodules in the Korea contract areas.

• Resources Recycling
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• v.21 no.5
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• pp.58-64
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• 2012

Ti button type ingots were prepared by recycling of Ti turning scraps using vacuum arc melting process for production of consumable arc electrode. The behavior of impurities such as Fe, W, O, and N in the Ti button ingots was investigated and the properties of the Ti button ingots were also evaluated. In the case of oxygen gaseous impurity, the oxygen layers on the surface of the Ti turning scraps were easily removed by the first vacuum arc melting. On the other hand, the solute oxygen in the Ti turning scraps was not removed by the next melting. In the case of Fe, major impurity in the Ti turning scraps, the removal degree in the final Ti button ingot refined by vacuum arc melting for 20 minutes was approximately 43 %, which is due to the vapor pressure difference between Ti and Fe. As a result, the Ti button ingots with ASTM grade 3 could be obtained by multiple vacuum arc melting from the Ti turning scraps. Therefore, it was confirmed that the preparation of consumable electrode for vacuum arc remelting could be possible by recycling of Ti turning scraps.

• Korean Journal of Soil Science and Fertilizer
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• v.45 no.4
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• pp.622-627
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• 2012

The processes to determine the composition, dynamics, and activity of infection mechanisms by the rhizosphere microflora have attracted the interest of scientists from multiple disciplines although considerable progress of the infection pathways and plant-pathogen interactions by soil borne fungal pathogens have been made. Soilborne pathogens are confined within a three-dimensional matrix of mineral soil particles, pores, organic matter in various stages of decomposition and a biological component. Among the physical and chemical properties of soils soil texture and matric water potential may be the two most important factors that determine spread exudates by soil borne fungal pathogens, based on the size of the soil pores. Pathogenic invasion of plant roots involves complex molecular mechanisms which occur in the diffuse interface between the root and the soil created by root exudates. The initial infection by soilborne pathogens can be caused by enzymes which breakdown cell wall layers to penetrate the plant cell wall for the fungus. However, the fate and mobility of the exudates are less well understood. Therefore, it needs to develop methods to control disease caused by enzymes produced by the soilborne pathogens by verifying many other possible pathways and mechanisms of infection processes occurring in soils.

• Journal of Powder Materials
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• v.22 no.2
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• pp.93-99
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• 2015

This study investigated the microstructure and tensile properties of a recently made block-type Ni-Cr-Al powder porous material. The block-type powder porous material was made by stacking multiple layers of powder porous thin plates with post-processing such as additional compression and sintering. This study used block-type powder porous materials with two different cell sizes: one with an average cell size of $1,200{\mu}m$ (1200 foam) and the other with an average cell size of $3,000{\mu}m$ (3000 foam). The ${\gamma}$-Ni and ${\gamma}^{\prime}-Ni_3Al$ were identified as the main phases of both materials. However, in the case of the 1,200 foam, a ${\beta}$-NiAl phase was additionally observed. The relative density of each block-type powder porous material, with 1200 foam and 3000 foam, was measured to be 5.78% and 2.93%, respectively. Tensile tests were conducted with strain rates of $10^{-2}{\sim}10^{-4}sec^{-1}$. The test result showed that the tensile strength of the 1,200 foam was 6.0~7.1 MPa, and that of 3,000 foam was 3.0~3.3 MPa. The elongation of the 3,000 foam was higher (~9%) than that (~2%) of the 1,200 foam. This study also discussed the deformation behavior of block-type powder porous material through observations of the fracture surface, with the results above.

• The Journal of the Korea Contents Association
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• v.16 no.5
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• pp.251-258
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• 2016

Recently, the demand for fast storage devices is rapidly increasing in cloud platforms, social network services, etc. Despite the development of fast storage devices, the traditional Linux I/O stack is not able to exploit the full extent of the performance improvement since it has been optimized for disk-based storage devices. In this paper, we propose an optimized I/O stack which can fully utilize the I/O bandwidth and latency of fast storage devices. To this end, we design a new I/O interface to replace the current block I/O interface and optimize our I/O interface. Our optimized I/O interface bypasses operations/layers in block I/O subsystems of the current Linux I/O stack to fully exploit fast storage devices. We also optimize the Linux file systems such as ext2 and ext4 to run on our I/O interface. We evaluate our I/O stack with multiple benchmarks and the experimental results show that our I/O stack achieves 1.7 times better throughput compared to traditional Linux I/O stack.