• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.157-160
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• 2002

In this paper, a novel lumped equivalent circuit for a conventional parallel directional coupler is proposed. The equivalent circuit and design formula for the presented lumped element coupler is derived based on the even-and odd-mode properties of a parallel-coupled line. By using the derived design formula, we have designed the 3㏈ and 10㏈ lumped element directional couplers at the center frequency of 100Mhz. Furthermore, a chip type directional coupler has been designed to fabricate with multilayer configurations by employing the Low Temperature CofiredCeramic (LTCC) process. Designed chip-type directional coupler has a 10㏈-coupling value at the center frequency of 2㎓. Excellent agreements between simulations and measurements on the designed directional couplers show the validity of this paper

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.33-37
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• 2013

The properties of LTCC green sheets formed by the MLS-22 powder of NEG Inc. were investigated for acrylic binders with different PVB and Tg in the variation of temperature. The elongation of the green sheets showed large variation depending on the temperature, and was rapidly decreased near the Tg of the sheets. With the increase of the ratio of plasticizer/binder (P/B), large elongation of the sheets was observed due to the decrease of the Tg. In the stacking process of the multilayer ceramic, the optimal control of the temperature is highly required depending on the Tg of the binder and the ratio of P/Buniform coating.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.10
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• pp.1036-1043
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• 2003

In this paper, novel lumped equivalent circuits for a conventional parallel directional coupler are proposed. This novel equivalent circuits only have self inductance and self capacitance, so we can design exact lumped equivalent circuit. The equivalent circuit and design formula for the presented lumped element coupler is derived based on the even- and odd-mode properties of a parallel-coupled line. By using the derived design formula, we have designed the 3 dB and 10 dB lumped element directional couplers at the center frequency of 100 MHz and 2 GHz, respectively a chip type directional coupler has been designed with multilayer configurations by employing commercial EM simulator. Designed chip-type directional couplers have a 3 dB-coupling value at the center frequency of 2 GHz and fabricated lumped directional coupler on fr4 organic substrate has a 3 dB, 10 dB-coupling values at the center frequency of 100 MHz. Excellent agreements between simulation results and measurement results on the designed directional couplers show the validity of this paper. Furthermore, in order to adapt to multi-layer process such as Low Temperature Cofired Ceramic (LTCC), chip-type lumped element couplers have been designed by using this method.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2000.11a
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• pp.61-64
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• 2000

We fabricated and characterized Low Noise Amplifier (LNA) using MCM-C (Multi-Chip-Module-Cofired) technology for 2.14 GHz IMT-2000 mobile terminal application. First, We designed LNA circuits and simulated it's high frequency characteristics using circuits simulator. For the simulation, we adopted high frequency libraries of all the devices used in LNA samples. By the simulation, Gain was 17 dB and Noise Figure was 1.4 dB. We used multilayer process of LTCC (Low Temperature Co-fired Ceramics) substrate and conductor, resistor pattern for the MCM-C LNA fabrication. We made 2 buried inductors, 2 buried capacitors and 3 buried resistors. The number of the total layers was 6. On the top layer, we patterned microstrip line and pads for the SMT device. We measured the high frequency characteristics, and the results were 14.7 dB Gain and 1.5 dB Noise Figure.

• Journal of Electrical Engineering and Technology
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• v.6 no.2
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• pp.263-269
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• 2011

In this study, the compositions for the microwave dielectric materials were investigated to obtain the improved dielectric properties, the high temperature stability, and the sintering temperature of less than $900^{\circ}C$, which was necessary for cofiring with the internal conductor of silver. In addition, the dielectric sheets were prepared by the tape casting technique, after which the sheets were laminated and sintered. In this process, the optimum ratio of powder and binder, laminating pressure, temperature, and possibility for cofiring with the internal conductor were studied. Finally, multilayer chip treplexer filter for the 800-2,000 MHz range were fabricated, and the frequency characteristics of the triplexer filter were investigated. When the $0.6TiTe_3O_8-0.4MgTiO_3+3wt%SnO+7wt%H_3BO_3$ ceramics were sintered at $820^{\circ}C$ for 0.3 hours, the microwave dielectric properties of the dielectric constant of 29.91, quality factor of 33,000 GHz, and temperature coefficient of resonant frequency of -2.76 ppm/$^{\circ}C$ were obtained. Using the Advanced Design System (ADS) and High Frequency Structure Simulator (HFSS), the multilayer chip triplexer filter acting at the range of 800-2,000 MHz were simulated and manufactured. The manufactured triplexer filter had the excellent frequency properties in the CDAM800, GPS and PCS frequency regions, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.4
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• pp.323-332
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• 2009

In this paper, we introduce a modified short-circuited stub bandpass filter suitable for ultra-wideband(UWB) applications utilizing low temperature co-fired ceramic(LTCC) technology. By modifying the conventional short-circuited stub bandpass filter structure with stubs and connecting lines of lower characteristic impedances, the number of stubs has been reduced from 5 to 2 on a high dielectric constant substrate($\varepsilon_r$ = 40). A wireless local area network (WLAN) stopband in the frequency range of 5.15 to 5.825 GHz has been inserted into the filter characteristic using three short-circuited coupled lines. The filter has been measured with an insertion loss less than 1.0 dB and return loss better than 10 dB in the pass bands. A bandwidth ratio of 109.49 % has been achieved. Measurement results agree well with simulation results. The dimensions of the filter are $4{\times}8{\times}0.57\;mm^3$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.1
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• pp.73-80
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• 2004

In this paper, the implementation and embedding method of the existing air-filled waveguide-filters at millimeter-wave on general PCB substrate is introduced by systematically inserting the vias inside waveguide and mathematically manipulating the simple equations obtained ken the classical circular-post waveguide filter design. All the metal structures placed vertically such as side wall fur perfect ground plane and circular-post for signal control in the air-filled WR-22 waveguide are replaced with several types of via for constructing the bandpass-filter. Side wall and poles inside waveguide are realized by placing a series array of via and tuning the via diameter. The lengths of x, y, z axis are reduced in proportion to root square of employed substrate dielectric constant and especially the length of z axis can be more reduced due to the characteristics of the wave propagation. Because the mass production on PCB is possible without fabricating a large-scaled metal waveguide of WR-22 as input/output ports at millimeter-wave regime, the manufacturing cost is reduced considerably. Finally, when using multilayer process like LTCC for small-sized module, it is one of advantages to use only one layer f3r the filter fabrication. To evaluate the validity of this novel technique, order-3 Chebyshev BPF(Bandpass-Filter) centered at 40 GHz-band with a 2.5 ％ FBW (Fractional Bandwidth) were used. The employed substrate has relative dielectric constant of 2.2 and thickness of 10 mil of Rogers RT/Duroid 5880. Accroding to design and measurement results, a good performance of insertion loss of 2 ㏈ and return loss of -30 ㏈ is achieved at full input/output ports.

• Journal of the Korean Ceramic Society
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• v.40 no.10
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• pp.961-966
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• 2003

A Multi-Layer Ceramic (MLC) chip type Band-Pass Filter (BPF) using BiNb$\_$0.975/Sb$\_$0.025/ $O_4$ LTCC (Low Temperature Co-fired Ceramics) and MLC processing is presented. The MLC chip BPF has the benefits of low cost and small size. The BPF consists of coupled stripline resonators and coupling capacitors. The BPF is designed to have an attenuation pole at below the passband for a receiver band of IMT-2000 handset. The computer-aided design technology is applied for analysis of the BPF frequency characteristics. The attenuation pole depends on the coupling between resonators and the coupling capacitance. An equivalent circuit and structure of MLC chip BPF are proposed. The frequency characteristics of the manufactured BPF is well acceptable for IMT-2000 application.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.11
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• pp.34-39
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• 2002

In this paper, we proposed novel photonic bandgap(PBG) structure using EGP(Elevated Ground Plane) and via in ceramic substrate of microstrip line. From analysis result, the proposed PBG structure is reduced 52.5% at size and increased 45 % at bandwidth compared to typical planar PBG structure. It is also reduced 32 % at size and improved more than 8 dB at power loss compared to typical multilayer DGS(Defected Ground Structure). The proposed PBG structure also can be used bandstop and lowpass filter and it will be useful for small microwave integrated circuit and module development.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.36-36
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• 2007

본 논문에서는 SoP-L(System on Package-Laminates) 기술을 이용하여 이종의 유전율을 가진 유기물 적층 기반의 수동소자를 이용한 GSM/DCS 대역 분리용 diplexer를 설계, 제작하였고 그 특성을 고찰하였다. SoP-L 기술은 LTCC기술과 같은 타 SoP 기술과 비교해서 이종의 물질을 접합하는데 용이하고 공정비용이 저렴하다. 이러한 장점을 이용하여 캐때시터는 유전율 40의 고유전율 재료를 사이에 두고 구성하였고, 인덕터 부문에는 유전율 4률 적용, 정방혈 스파이럴 구조로 두 개 층으로 구성하여 소형화를 이룰 수 있었다. 제작 시에 구리와 유기물을 적층, patterning 하였고, 수직 via hole 을 형성하고 구리의 무전해, 전해 도금 과정을 거쳐 각 소자를 연결하였다. 이러한 과정을 거쳐 제작된 diplexer의 GSM 저역 통과 필터는 0.52 dB이하의 삽입손실과 20 dB 이상의 반사손실을 가지고 DCS 통과 대역 부근에 notch 가 존재하도록 설계함으로써 DCS 통과 대역에서 17 dB 이상의 저지특성을 나타내었다. DCS 고역 통과 필터는 1.2 dB 이하의 삽입손실과 16 dB 이상의 반사손실을 가지며 GSM 통과 대역 부근에 notch를 가지도록 설계하여 GSM 통과대역에서 32 dB 이상의 저지특성을 나타내었다.