• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.1
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• pp.1-5
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• 2006

The effect of A/B moi ratios and sintering temperatures on dielectric properties and microstructure of $(Ba_{0.93}Ca_{0.07})_m(Ti_{0.82}Zr_{0.18})O_3$ ceramics were investigated. The dielectric constant decreased with increasing the A/B mol ratio. However, the dielectric loss is improved. As the dielectric properties of A/B mol ratio with m = 1.009 at sintered temperature $1260^{\circ}C$, we obtained dielectric constant 12,800, dielectric loss $3.5\%$ and Y5V temperature characteristics. Highly reliable Ni-MLCCs, 1.6mm$(length){\time}0.8mm(width){\time}0.8mm$(height) with capacitance of 1.23 ${\mu}F$ and 야ssipation loss of $5.2\%$ were obtained employing dielectric material composed of $(Ba_{0.93}Ca_{0.07})_{1.009}(Ti_{0.82}Zr_{0.18})O_3$ - $MnO_2\;0.2wt\%-Y_2O_3\;0.18wt\%,\;-\;SO_2\;0.15wt\%-(Ba_{0.4}Ca_{0.6})SiO_3\;1wt\%$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.2
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• pp.136-141
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• 2005

In this study, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PCW-PMN-PZT ceramics using Li$_2$CO$_3$, Bi$_2$O$_3$, and CuO as sintering aids were manufactured according to the amount of MnO$_2$ addition. Their microstructural, dielectric and piezoelectric properties were investigated. When the sintering aids were added, specimens could be sintered below 95$0^{\circ}C$, but mechanical qualify factor decreased. Therefore, MnO$_2$ was added excessively to the PCW-PMN-PZT ceramics to increase mechanical quality factor. At the sintering temperature of 95$0^{\circ}C$, the density, dielectric constant($\varepsilon$$_{r}$), electromechanical coupling factor(k$_{p}$), mechanical quality factor(Q$_{m}$) and Curie temperature(T$_{c}$) of 0.1 wt% MnO$_2$ added specimen showed the optimal values of 7.75 g/㎤, 1503, 0.57, 1502, and 337, respectively, for multilayer piezoelectric transformer application.ation.n.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.237-242
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• 2005

In this paper, in order to develop the low temperature sintering ceramics for multilayer piezoelectric transformer, PMN-PZT ceramics were manufactured with the variations of sintering times, and their microstructural, piezoelectric and dielectric properties were investigated. Li$_2$CO$_3$ and Bi$_2$O$_3$ were used as sintering aids and the specimens were sintered during 30, 60, 90, 120, 150, and 180 minutes, respectively. At the specimen sintered during 90 minute, mechanical quality factor(Qm), electro-mechanical coupling factor(kp) and dielectric constant were showed the optimum values of 2,356, 0.504 and 1,266, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.288-289
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• 2007

In this study, in order to develop low temperature sintering ceramics for multilayer piezoelectric actuator application, PMN-PZN-PZT ceramics were manufactured as a function of the amount of CuO addition and their dielectric and piezoelectric characteristics were investigated. With the amount of CuO addition, the physical characteristics of specimens decreased. The specimens showed the optimum value at 0.5wt%CuO addition. Their optimum values were density=$7.93g/m^3$, ${\varepsilon}_r$=1398, kp=0.560, Qm=1706, $d_{33}$=327pC/N, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.284-285
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• 2007

본 논문에서는 저소음 및 저 신호 왜곡 특성을 가지는 내환원성 유전체 원료를 개발하기 위하여 $(Ca_{0.7}Sr_{0.3})(Zr_{0.97}Ti_{0.03})O_3$에 $CaTiO_3$, $SrTO_3$, $BaTiO_3$를 첨가하여 이에 따른 유전 특성을 조사하였다. 첨가량의 조절 및 glass frit 첨가를 통하여 환원성 분위기에서도 유전율 80 ~ 100, 절연저항 (R*C) 500[ohm-F] 이상의 유전특성을 얻었다. 본 연구결과로 얻어진 유전재료를 적용하면 무소음 및 저 신호 왜곡 특성을 가지면서도 고 신뢰성의 MLCC를 제작할 수 있을 것으로 예상된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.348-348
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• 2005

High capacitance MLCC has been enabled through the use of nickel electrodes to produce thinner layers at acceptable costs. High capacitance MLCC devices offer significant advantages to electrolytics such as tantalum and aluminum ; Lower ESR for high frequency applications. Non-polarized. Many process improvement have enabled this technology Higher dielectric constants Thinner dielectric and electrode layers through BME More accurate layer construction. This study is high capacitance MLCC electrical propertics. reliability, Analysis on DOE(Design Of Experiment) of the electical propertics.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.15-22
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• 1999

Generally, many equipments and a long lead time ale required to manufacture the build-up multilayer board through various processes such as etching, plating, drilling etc. Wet process is suitable for mass production, however it is not adequate for manufacturing prototype in developing stage. In this study, a silk screen printing technology is introduced to make a prototype build-up multilayer board. As for the material photo/thermal curable resin and conductive paste are used for forming dielectric and conductor. And conductive paste fills vias for interconnecting each layer, and also is used for circuit patterning by silk screen technology. Finally, the basic concept and the possibility of build-up multilayer board prototype is proposed and verified as a powerful approach, compared with the conventional processes.

• Journal of the Korean Ceramic Society
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• v.32 no.10
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• pp.1111-1116
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• 1995

To use dielectric material of high power multilayer capacitor, the composition of the commercial CaTiO3 was changed to decrease the sintering temperature, and the physical and electrical properties were investigated. Series of experiments showed that CaTiO3 with sintering additives had the highest density, the highest shrinkage, the lowest dielectric constant, the lowest loss factor, and the lowest temperature coefficient of capacitance (TCC). These properties had the constant values at sintering temperature of above 120$0^{\circ}C$.

• Bulletin of the Korean Chemical Society
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• v.23 no.5
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• pp.741-744
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• 2002

Single phase of multicomponent oxide ZrTiO4 film could be prepared through surface sol-gel route simply by coating the mixture of 100 mM zirconium butoxide and titanium butoxide on $Pt/Ti/SiO_2Si(100)$ substrate, following pyro lysis at $450^{\circ}C$, and annealing it at 770 $^{\circ}C.$ The dielectric constant of the film was reduced as the film thickness decreased due to of the interfacial effects caused by layer/electrode and a few voids inside the multilayer. However, the dielectric property was independent of applied dc bias sweeps voltage (-2 to +2 V).The dielectric constant of bulk film, 31.9, estimated using series-connected capacitor model was independent of film thickness and frequency in the measurement range, but theoretical interfacial thickness, ti, was dependent on the frequency. It reached a saturated ti value, $6.9{\AA}$, at high frequency by extraction of some capacitance component formed at low frequency range. The dielectric constant of bulk ZrTiO4 pellet-shaped material was 33.7 and very stable with frequency promising as good applicable devices.

• Proceedings of the Korea Crystallographic Association Conference
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• 2002.11a
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• pp.48-48
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• 2002

It is generally accepted that ultra low dielectric interlayer dielectric materials (k < 2.2) will be necessary for ULSI advanced microelectronic devices after 2003, according to the International Technology Roadmap for Semiconductors (ITRS) 2000. A continuous reduction of dielectric constant is believed to be possible only by incorporating nanopores filled with air (k = 1.0) into electrically insulating matrices such as poly(methyl silsesquioxane) (PMSSQ). The nanopo.ous low dielectric films should have excellent material properties to survive severe mechanical stress conditions imposed during the advanced semiconductor processes such as chemical mechanical planarization process and multilayer fabrication. When air is incorporated into the films for lowering k, their mechanical strength has inevitably to be sacrificed. To minimize this effect, the nanopores are controlled to exist in the film as closed cells. The micromechanical properties of the nanoporous thin films are considered more seriously than ever, particularly for ultra low dielectric applications. In this study, three approaches were made to design and develop nanoporous low dielectric films with improved micromechanical properties: 1) wall density increase of nanoporous organosilicate film by copolymerization of carbon bridged comonomers; 2) incorporation of sacrificial phases with good miscibility; 3) selective surface modification by plasma treatment. Nanoporous low-k films were prepared with copolymerized PMSSQ and star-shaped sacrificial organic molecules, both of which were synthesized to control molecular weight and functionality. The nanoporous structures of the films were observed using field emission scanning electron microscopy, cross-sectional transmission electron microscopy, atomic force microscopy, and positronium annihilation lifetime spectroscopy(PALS). Micromechanical characterization was performed using a nanoindentor to measure hardness and modulus of the films.