• 제목/요약/키워드: Multilayer Dielectric Material

검색결과 113건 처리시간 0.022초

혼합 산화제가 W-CMP 특성에 미치는 영향 (Effects of Mixed Oxidizer on the W-CMP Characteristics)

  • 박창준;서용진;김상용;이우선
    • 한국전기전자재료학회논문지
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    • 제16권12S호
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    • pp.1181-1186
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    • 2003
  • Chemical Mechanical Polishing (CMP) is an essential dielectric planarization in multilayer microelectronic device fabrication. In the CMP process, it is necessary to minimize the extent of surface defect formation while maintaining good planarity and optimal material removal rates. The polishing mechanism of W-CMP process has been reported as the repeated process of passive layer formation by oxidizer and abrasion action by slurry abrasives. Thus, it is important to understand the effect of oxidizer on W passivation layer, in order to obtain higher removal rate (RR) and very low non-uniformity (NU %) during W-CMP process. In this paper, we compared the effects of oxidizer or W-CMP process with three different kind of oxidizers with 5 wt% hydrogen peroxide such as Fe(NO$_3$)$_3$, H$_2$O$_2$, and KIO$_3$. The difference in removal rate and roughness of W in stable and unstable slurries are believed to caused by modification in the mechanical behavior of Al$_2$O$_3$ particles in presence of surfactant stabilizing the slurry.

KNbO3 치환이 (Li,Na,K)(Nb,Sb,Ta)O3계 세라믹스의 유전 및 압전 특성에 미치는 영향 (Effects of KNbO3-Substitution on the Dielectric and Piezoelectric Properties of (Li,Na,K)(Nb,Sb,Ta)O3 System Ceramics)

  • 노정래;류주현;이상돈
    • 한국전기전자재료학회논문지
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    • 제26권3호
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    • pp.204-208
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    • 2013
  • In this study, $KNbO_3$-substituted (Li,Na,K)(Nb,Sb,Ta)$O_3$ ceramics were investigated to develop Pb-free composition ceramics for multilayer actuator and energy harvester applications. The X-ray diffraction analysis indicated that all samples were pure perovskite phase and no secondary phase was found. A tetragonality as a function of $KNbO_3$ substitution showed the maximum value at 1.5 mol% $KNbO_3$ and then decreased. The SEM image analysis showed the maximum grain size of $3.14{\mu}m$ at 1.5mol% $KNbO_3$. In the composition ceramics with 1.5 mol% $KNbO_3$ sintered at $1,100^{\circ}C$, excellent properties of density= 4.75 $g/cm^3$, electromechanical coupling factor ($k_p$)= 0.50 and piezoelectric constant($d_{33}$)= 290 pC/N were obtained, respectively, suitable for piezoelectric actuator and energy harvester applications.

TSDC 방법을 이용한 X5R MLCC의 신뢰성 평가 (Thermally Stimulated Depolarization Current Test for Reliability of X5R MLCC)

  • 박지영;박재성;김영태;허강헌
    • 한국세라믹학회지
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    • 제46권2호
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    • pp.155-160
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    • 2009
  • The reliability could be one of the essential properties for multilayer ceramic capacitor (MLCC) using in various electronic devices and the concentration and mobility of oxygen vacancy would play important role in the reliability. To investigate the migration behavior of oxygen vacancies, thermally stimulated depolarization current (TSDC) is adopted. In dielectric material of X5R MLCC, the TSD-Current peak observed around 150$^{\circ}C$ and 200$^{\circ}C$ which represented the migration of oxygen vacancy. Substituting Yttrium for Dysprosium in X5R MLCC showed higher migration activation energy and lower TSD current density.

Ba치환된 $Pb(Mg_{1/3}Nb_{2/3})O_3$-$PbTiO_3$-$PbZrO_3$계 세라믹스의 압전 및 변위특성에 관한 연구 (Piezoelectric and strain characteristics of PMN-PT-PZ ceramics with Ba addition)

  • 지승한;이덕출;이능헌
    • E2M - 전기 전자와 첨단 소재
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    • 제10권1호
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    • pp.20-25
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    • 1997
  • In this study, piezoelectric actuator samples were fabricated using 0.375PMN-0.37OPT-0.255PZ system ceramics with Barium substitution and the strain properties of them were investigated. Dielectric constant of the specimens increased with the increase of Ba content up to 5mol% and decreased with futher addition of Ba. The largest piezoelectric coefficient and electromechanical coupling coefficient were observed at the sintering temperature of 1250'C and Barium content of 5mol%. The characteristics of strain hysteresis was found largely with varing the sintering temperature on the single round type, and the strain is proportional to piezoelectric coefficient.

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Implementation of Low Loss Radome with Hexa mesh for Ku-Band

  • Seo, Kang;JeongJin, Kang
    • International Journal of Advanced Culture Technology
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    • 제10권4호
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    • pp.555-560
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    • 2022
  • In this study, the insertion loss and phase delay according to the multi-layer structure radome parameters were analyzed using the boundary value solution approach, and the multi-layer structure and hexa mesh structures with low-loss electrical characteristics for the Ku-band transmission/reception frequency of 10.7 ~ 14.5 GHz were designed and manufactured. A hexa mesh was applied to minimize radio wave transmission and scattering, which lowered the transmittance refractive index according to the radio incident angle and minimized dielectric loss through high-density foam. Similar to the simulation result, the transmission loss obtained the gain in a specific receiving frequency band, and in the transmission frequency band, an excellent low loss characteristic was obtained with an insertion loss of 0.8dB or less. The results of this study can be used in radio transmission radomes of low-weight, low-cost end-system protection devices.

In-situ ellipsometry를 사용한 광기록매체용 Ge-Sb-Te 다층박막성장의 실시간 제어 (Real time control of the growth of Ge-Sb-Te multi-layer film as an optical recording media using in-situ ellipsometry)

  • 김종혁;이학철;김상준;김상열;안성혁;원영희
    • 한국광학회지
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    • 제13권3호
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    • pp.215-222
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    • 2002
  • 광기록매체용 Ge-Sb-Te다층박막 성장과정을 in-situ 타원계를 사용하여 실시간으로 모니터하여 각 층의 두께를 제어하고 성장된 Ge-Sb-Te 다층박막을 ex-site 분광타원법으로 확인하였다. 보호층인 ZnS-SiO$_2$와 기록층인 Ge$_2$Sb$_2$Te$_{5}$을 단결정실리콘 기층 위에 스퍼터링 방법으로 각각 성장시키면서 구한 타원상수 성장곡선을 분석하여 성장에 따르는 보호층의 균일성 및 기록 층의 밀도변화를 파악하고 이를 기초로 하여 Ge-Sb-Te광기록 다층박막의 두께를 정밀하게 제어하였다. Ge$_2$Sb$_2$Te$_{5}$ 단층박막 시료의 복소굴절율은 eX-Situ 분광타원분석을 통하여 구하였다. 제작된 다층구조는 설정된 다층구조인 ZnS-SiO$_2$(1400$\AA$)$\mid$ GST(200 $\AA$)$\mid$ZnS-SiO$_2$(200$\AA$)와 각 층의 두께 및 전체 두께에서 1.5% 이내에서 일치하는 정확도를 보여주었다.주었다.

전력 소자용 유기박막의 전기적 특성 (Electrical Properties of Organic Thin Film for Power Device)

  • 송진원;최용성;문종대;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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    • pp.20-22
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    • 2006
  • Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understanding of the relationship between the structure and function of the monolayers. Maxwell displacement current (MDC) measurement has been employed to study the dielectric property of Langmuir-films. MDC flowing across monolayers is analyzed using a rod-like molecular model. A linear relationship between the monolayer compression speed and the molecular area Am. Compression speed was about 30, 40, 50mm/min. Langmuir-Blodgett(LB)layers of Arachidic acid deposited by LB method were deposited onto slide glass as Y-type film. The structure of manufactured device is Au/Arachidic acid/Al, the number of accumulated layers are 9~21. Also, we then examined of the Metal-Insulator-Metal(MIM) device by means of I-V. The I-V characteristics of the device are measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

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$BiNbO_4$세라믹스를 이용한 저역통과 필터에 관한 연구 (Experimental Fabrication of Low Pass Filter of $BiNbO_4$ Ceramics)

  • 고상기;김경용;김병호;최환
    • 한국전기전자재료학회논문지
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    • 제11권4호
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    • pp.281-287
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    • 1998
  • $BiNbO_4$ ceramics doped with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) were sucessfully sintered at $900^{\circ}C$ through the firing process with Ag electrode. The BNC3V7 shows typically Dielectric constant of 44.3, Thermal Coefficient of resonance Frequency(TCF) of 2 ppm/$^{\circ} and $Qxf_o$ value of 22,000 GHz. The laminated chip Low Pass Filter (LPF) is very sensitive to chip processing parameters, was confirmed by the computer simulation as a function of Q(Quality factors), filter size, capacitor layer thickness, inductor pattern widths. The multilayer type LPF was fabricated by screen-printing with Ag electrode after tape casting and then compared with the simulated characteristics. The results show that characterization of band pass width was similar to that of designed ones.

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NKN 무연압전 액추에이터의 신뢰성 연구 (An Investigation on the Aging Properties of NKN Lead-free Piezoelectric Multi-layer Ceramic Actuators)

  • 채문순;이규탁;고중혁
    • 한국전기전자재료학회논문지
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    • 제24권10호
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    • pp.803-806
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    • 2011
  • 1 mol% $Li_2O$ excess $0.9(Na_{0.52}K_{0.48})NbO_3-0.1LiTaO_3$ lead-free piezoelectric multilayer ceramic actuators were investigated to determine their aging properties. To reduce the thermal aging behavior, we applied a rectified unipolar electric field of 5 kV/mm to the specimen to accelerate the electric aging behavior. By employing a rectified unipolar electric field for the piezoelectric actuators, we could remove undesirable heating from the relaxation current in the motion of the ferroelectric domain. To accelerate the aging test, the applied electric fields had a frequency of 900 Hz. To have enough time for charging and discharging, we employed an accurate time constant to design the equivalent circuit model for the aging tester. To extract exact aging behavior, we measured the pseudo-piezoelectric coefficient before and after the aging process. We also measured the electro-mechanical coupling coefficient, the frequency-dependent dielectric permittivity, and the impedance to compare with fresh and aged specimen.

Ellipsometric study of Mn-doped $Bi_4Ti_3O_{12}$ thin films

  • Yoon, Jae-Jin;Ghong, Tae-Ho;Jung, Yong-Woo;Kim, Young-Dong;Seong, Tae-Geun;Kang, Lee-Seung;Nahm, Sahn
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.173-173
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    • 2010
  • $Bi_4Ti_3O_{12}$ ($B_4T_3$) is a unique ferroelectric material that has a relatively high dielectric constant, high Curie temperature, high breakdown strength, and large spontaneous polarization. As a result this material has been widely studied for many applications, including nonvolatile ferroelectric random memories, microelectronic mechanical systems, and nonlinear-optical devices. Several reports have appeared on the use of Mn dopants to improve the electrical properties of $B_4T_3$ thin films. Mn ions have frequently been used for this purpose in thin films and multilayer capacitors in situations where intrinsic oxygen vacancies are the major defects. However, no systematic study of the optical properties of $B_4T_3$ films has appeared to date. Here, we report optical data for these films, determined by spectroscopic ellipsometry (SE). We also report the effects of thermal annealing and Mn doping on the optical properties. The SE data were analyzed using a multilayer model that is consistent with the original sample structure, specifically surface roughness/$B_4T_3$ film/Pt/Ti/$SiO_2$/c-Si). The data are well described by the Tauc-Lorentz dispersion function, which can therefore be used to model the optical properties of these materials. Parameters for reconstructing the dielectric functions of these films are also reported. The SE data show that thermal annealing crystallizes $B_4T_3$ films, as confirmed by the appearance of $B_4T_3$ peaks in X-ray diffraction patterns. The bandgap of $B_4T_3$ red-shifts with increasing Mn concentration. We interpret this as evidence of the existence deep levels generated by the Mn transition-metal d states. These results will be useful in a number of contexts, including more detailed studies of the optical properties of these materials for engineering high-speed devices.

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