• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.165.1-165.1
• /
• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.110.2-110.2
• /
• 2007

• Proceedings of the Korean Magnestics Society Conference
• /
• 2012.05a
• /
• pp.19-19
• /
• 2012

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.281.2-281.2
• /
• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.80-80
• /
• 2009

Recently, multiferroics have attracted much attention due to their numorous potentials. In this work, we attemped to utilize the multiferroics as an alternative material for ferroelectrics. Ferroelectric materials have been stadied to ferroelectric random access memories, however, some inevitable problems prevent it from inplementation. multiferroics shows a ferroelectricity and has low process temperature $BiFeO_3$(BFO) films have good ferroelectric properties but poor leakage characterization. Thus we tried, in this work, to adopt $HfO_2$ insulating layer for metal-ferroelectric-insulator-semiconductor(MFMIS) structure to surpress to leakage current. $BiFeO_3$(BFO) thin films were fabricared by using a sol-gel method on $HfO_2/Si$ structure. Ferroelectric BFO films on a p-type Si(100)wafer with a $HfO_2$ buffer layer have been fabricated to form a metal-ferroelectric-insulator-semiconductor (MFIS) structure. The $HfO_2$ insulator were deposited by using a sol-gel method. Then, they were carried out a rapid thermal annealing(RTA) furnace at $750\;^{\circ}C$ for 10 min in $N_2$. BFO films on the $HfO_2/Si$ structures were deposited by sol-gel method and they were crystallized rapid thermal annealing in $N_2$ atomsphere at $550\;^{\circ}C$ for 5 min. They were characterized by atomic force microscopy(AFM) and Capacitance-voltage(C-V) curve.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.34 no.5
• /
• pp.386-392
• /
• 2021

Multiferroics exhibiting the coexistence and a possible coupling of ferromagnetic and ferroelectric order are attracting widespread interest in terms of academic interests and possible applications. However, room-temperature single-phase multiferroics with soft ferromagnetic and displacive ferroelectric properties are still rare owing to the contradiction in the origin of ferromagnetism and ferroelectricity. In this study, we demonstrated that sizable ferromagnetic properties are induced in the ferroelectric bismuth ferrite-barium titanate system simply by introducing Co ions into the A-site. It is noted that all modified compositions exhibit well-saturated magnetic hysteresis loops at room temperature. Especially, 70Bi_0.95Co_0.05FeO₃-30Ba_0.95Co_0.05TiO₃ manifests noticeable ferroelectric and ferromagnetic properties; the spontaneous polarization and the saturation magnetization are 42 µC/cm² and 3.6 emu/g, respectively. We expect that our methodology will be widely used in the development of perovskite-structured multiferroic oxides.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.111.1-111.1
• /
• 2007

• Proceedings of the KIEE Conference
• /
• 2011.07a
• /
• pp.1696-1697
• /
• 2011

최근들어 멀티 페로익스(multiferroics)재료를 이용하여 자계(magnetic field)하에서 전기적현상(polarization)을 유기시키는 재료에 대한 관심이 폭발적으로 증가되고 있다. 이는 megnetoelectric 효과(ME 효과)를 이용하는 방법으로, 자기 및 전류센서에 응용함을 위해 크게 각광받고 있으며, 본 연구에서는 자계내에서 자성재료-압전재료의 다층 구조 캔틸레버의 구현을 통해 전기적인 신호로의 변화를 통해 전류 및 자기 센서로의 가능성에 대한 연구를 진행하였다.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.111.1-111.1
• /
• 2008

• Proceedings of the Korean Magnestics Society Conference
• /
• 2011.12a
• /
• pp.101-101
• /
• 2011

The control of magnetization by an electric field at room temperature remains as one of great challenges in materials science. Multiferroics, in which magnetism and ferroelectricity coexist and couple to each other, could be the most plausible candidate to realize this long-sought capability. While recent intensive research on the multiferroics has made significant progress in sensitive, magnetic control of electric polarization, the electrical control of magnetization, the converse effect, has been observed only in a limited range far below room temperature. Here we demonstrate at room temperature the control of both electric polarization by a magnetic field and magnetization by an electric field in a multiferroic hexaferrite. The electric polarization rapidly increases in a magnetic field as low as 5 mT and the magnetoelectric susceptibility reaches up to 3200 ps/m, the highest value in single phase materials. The magnetization is also modulated up to 0.34 mB per formula unit in an electric field of 1.14 MV/m. Furthermore, this compound allows nonvolatile, magnetoelectric reading- and writing-operations entirely at room temperature. Four different magnetic/electric field writing conditions generate repeatable, distinct M versus E curves without dissipation, offering an unprecedented opportunity for a multi-bit memory or a spintronic device applications.