• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.65-69
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• 2003

ZnO-Si-ZnO multi-layer thin films have been deposited by pulsed laser deposition (PLD). And then, the films have been annealed at 300$^{\circ}C$ in oxygen ambient pressure. Peak positions of ultraviolet (UV) and visible region were changed by addition of Si layer. Mobility of the films was improved slightly than ZnO thin film without Si layer. The structural property changed by inserting intermediate Si layer in ZnO thin film. The optical properties and structural properties of ZnO-Si-ZnO multi-layer thin films were characterized by PL(Photoluminescence) and XRB(X-ray diffraction) method, respectively. Electrical properties were measured by van der Pauw Hall measurements

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.243-246
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• 2000

The sputtering systems mainly consist of the three-target holder. The target and substrate were the on-axis type. The MgO and STO substrate were used for the deposition of each layer. The optimum conditions of single-layer thin film were investigated from the SEM images and the XRD patterns. Based on the above conditions, the multi-layer thin films such as YBaCuO/LaGaO/Au/Nb and YBaCuO/Au/Nb were fabricated. The crystalline, the electrical Properties, the energy gap structure and the characteristics of the tunneling barrier on the multi-layer thin film have been investigated and characterized.

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.49-51
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• 2002

In this thesis, Josephson junction using high-Tc superconducting multi-layer thin film has been fabricated by on-axis RF magnetron sputtering method. And, the characterizations were performed by X-ray diffraction, SEM and the measuring system of critical current density. The physical properties of multi-layer superconducting thin films were also analyzed with the measured results. To fabricate the multi-layer superconducting thin films, the optimum partial pressure of Argon and Oxgen and the temperature of substrate were measured. Also, YBaCuO thin film was grown on MgO and $SrTiO_3$ substrates by rf-sputtering and LGO thin film of 30 A was epitaxially grown on the YBaCuO thin film as a josephson junction with the same condition. The schottky barrier at the contact surface between YBaCuO/LGO and YBaCuO/Au and the energy gap of 0.5 ${\sim}$ 0.6 mV in Nb were observed from the dI/dV-V of YBaCuO/LGO/Au/Nb and YBaCuO/Au/Nb.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.287-295
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• 2019

Privacy films are typically manufactured by combining black resin and transparent louver-shaped patterns. The use of black resin results in excellent light-shielding. However, black resin can reduce the transmittance of privacy films at the front viewing angle. In this study, we applied $SiO_2/SiON$ multi-layer thin films on a privacy film to maintain transmittance at the front viewing angle and improve light-shielding at the side viewing angle. We determined the optimum combination of thicknesses of the $SiO_2/SiON$ multi-layer stacks to increase the overall transmittance; the light shielding could be maximized at the side viewing angle.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.618-618
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• 2013

Graphene is only one atom thick planar sheet of sp2-bonded carbon atoms arranged in a honeycomb crystal lattice, which has flexible and transparent characteristics with extremely high mobility. These noteworthy properties of graphene have given various applicable opportunities as electrode and/or channel for various flexible devices via suitable physical and chemical modifications. In this work, for the development of all-graphene devices, we performed to synthesize alternately patterned structure of mono- and multi-layer graphene by using the patterned Ni film on Cu foil, having much different carbon solid solubilities. Depending on the process temperature, Ni film thickness, introducing occasion of methane and gas ratio of CH4/H2, the thickness and width of the multi-layer graphene were considerably changed, while the formation of monolayer graphene on just Cu foil was not seriously influenced. Based on the alternately patterned structure of mono- and multi-layer graphene as a channel and electrode, respectively, the flexible TFT (thin film transistor) on SiO2/Si substrate was fabricated by simple transfer and O2 plasma etching process, and the I-V characteristics were measured. As comparing the change of resistance for bending radius and the stability for a various number of repeated bending, we could confirm that multi-layer graphene electrode is better than Au/Ti electrode for flexible applications.

• Electrical & Electronic Materials
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• v.10 no.7
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• pp.645-650
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• 1997

We manufactured CoNbZr/Cu/CoNbZr multi-layer films by rf magnetron sputtering methods and formed the patterns on the deposited multi-layer films. In this study, we fabricated a new etchant for forming the patterns by the wet etching with etchant and we searched for the best etching conditions and the etchant composition. Cu was etched selectively independent on the concentration of iron chloride solution, but amorphous CoNbZr thin film did not. The etchant was achieved by iron chloride solution(17.5 mol%) mixed with HF (20 mol%) during 150 sec, which etched CoNbZr/Cu/CoNbZr multi-layer films at the same time. Also, the etchant etched CoNbZr/Cu/CoNbZr multi-layer films by the three-step. It was shown that the cross-section had the isotropic structure and excellent etching characteristics with the above etchant.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.441-444
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• 2007

In this paper, the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices with high-quality multi-layer reflectors are proposed. The ultrathin Cr film $(300\;\AA-thick)$ between $SiO_2$ film and W film is formed by a sputtering-deposition in order to enhance the adherence at their interfaces. The resonance frequency was observed to vary with the number of the reflectors. This seems to be attributed to the change in the effective thickness of the ZnO film. Also, increasing the number of layers has led to a significant improvement of the series/parallel quality factor.

• Electrical & Electronic Materials
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• v.7 no.3
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• pp.231-235
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• 1994

The multi-dielectric layer $SiO_2$/$Si_3{N_4}$/$SiO_2$ (ONO) is used to improve charge retention and to scale down the memory device. The nitride layer of MNOS device is oxidize to form ONO system. During the oxidation of the nitride layer, the change of thickness of nitride layer and generation of interface state between nitride layer and top oxide layer occur. In this paper, effects of oxidation of the nitride layer is studied. The decreases of the nitride layer due to oxidation and trapping characteristics of interface state of multi layer dielectric film are investigated through the C-V measurement and F-N tunneling injection experiment using SONOS capacitor structure. Based on the experimental results, carrier trapping model for maximum flatband voltage shift of multi layer dielectric film is proposed and compared with experimental data. As a results of curve fitting, interface trap density between the top oxide and layer is determined as being $5{\times}10^11$~$2{\times}10^12$[$eV^1$$cm^2$].

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.27-29
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• 2005

ZnO and phosphorus doped ZnO thin films (ZnO:P) are deposited by pulsed laser deposition grown on (001) $Al_{2}O_{3}$. ZnO/ZnO:P/ZnO/$Al_{2}O_{3}$ (multi-layer) structure was used for phosphorus doped ZnO fabrication. This multi-layer structure thin film was annealed at $400^{\circ}C$ for 40 min. The electron concentration of that was changed from $10^{19}$ to $10^{16}/cm^{-3}$ after annealing. ZnO thin films with encapsulated structure showed the enhanced structural and optical properties than phosphorus doped ZnO without encapsulated layer. In this study, encapsulated ZnO structure was suggested to enhance electrical, structural and optical properties of phosphorus doped ZnO thin film and it was identified that encapsulated structure could be used to fabricate high quality phosphorus doped ZnO thin film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.754-757
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• 2006

The inorganic multi-layer thin film encapsulation was newly adopted to protect the organic layer from moisture and oxygen. Using the electron beam, sputter, inorganic multi-layer thin-film encapsulation was deposited onto the Polyethylene Terephthalate (PET) and their interface properties between inorganic and organic layer were investigated. In this investigation, the SiON, $SiO_2$ and parylene layer showed the most suitable properties. Under these conditions, the WVTR for PET can be reduced from level of $0.57g/m^2/day$ (bare subtrate) to $1*10^{-5}g/m^2/day$ after application of a SiON and $SiO_2$ layer. These results indicates that the $PET/SiO_2/SiON/Parylene$ barrier coatings have high potential for flexible organic light-emitting diode(OLED) applications.