• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.322.1-322.1
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• 2014

Many research groups have studied tandem or multi-junction cells to overcome this low efficiency and degradation. In multi-junction cells, band-gap engineering of each absorb layer is needed to absorb the light at various wavelengths efficiently. Various absorption layers can be formed using multi-junctions, such as hydrogenated amorphous silicon carbide (a-SiC:H), amorphous silicon germanium (a-SiGe:H) and microcrystalline silicon (${\mu}c$-Si:H), etc. Among them, ${\mu}c$-Si:H is the bottom absorber material because it has a low band-gap and does not exhibit light-induced degradation like amorphous silicon. Nevertheless, ${\mu}c$-Si:H requires a much thicker material (>2 mm) to absorb sufficient light due to its smaller light absorption coefficient, highlighting the need for a high growth rate for productivity. ${\mu}c$-SiGe:H has a much higher absorption coefficient than ${\mu}c$-Si:H at the low energy wavelength, meaning that the thickness of the absorption layer can be decreased to less than half that of ${\mu}c$-Si:H. ${\mu}c$-SiGe:H films were prepared using 40 MHz very high frequency PECVD method at 1 Torr. SiH4 and GeH4 were used as a reactive gas and H2 was used as a dilution gas. In this study, the ${\mu}c$-SiGe:H layer for triple solar cells applications was performed to optimize the film properties.

• 전기학회논문지P
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• 제61권2호
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• pp.97-102
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• 2012

CPV system in the desert areas or areas near the equator, as is suitable for high-temperature region. As compared to silicon solar cells, CPV system have a high proportion of a BOS (balance of system). Solar cells because of its low proportion when designing a module technology is applied in a variety of ways. Applied to the CPV system is classified into two kinds of optical technology. One of those using fresnel lens uses refraction of light energy. The other is a mirror reflection of the structure using sprays. Both of these two ways to condense the sun to collect solar cell is a form of light. And goals by using a small solar cell materials is to produce more energy. In this paper, suitable for a domestic environment, with the aim CPV Manufacturing Technology, built on a variety of modular process technology to the development of a prototype performance analysis was carried out. In particular, silicone coated on the glass by the method of implementation of the Fresnel lens SOG(Silicon on glass) by applying the lens to absorb the solar spectrum was broad. In addition to, for the analyze to characteristics of the CPV module, developed CPV module performance and generating characteristics studied. These related technology through research and development of high-performance multi-junction solar cells, modules, development of concentrating solar power systems to facilitate the growth of the market is considered to be.

• 한국재료학회지
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• 제20권11호
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• pp.586-591
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• 2010

Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.

• 신재생에너지
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• 제4권2호
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• pp.68-73
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• 2008

It is very important that constitution of good hetero-junction interface with a high quality amorphous silicon thin films on very cleaned c-Si wafer for making high efficiency hetero-junction solar cells. For achieving the high efficiency solar cells, the inspection and management of c-Si wafer surface conditions are essential subjects. In this experiment, we analyzed the c-Si wafer surface very sensitively using Spectroscopic Ellipsometer for < ${\varepsilon}2$ > and u-PCD for effective carrier life time, so we accomplished < ${\varepsilon}2$ > value 43.02 at 4.25eV by optimizing the cleaning process which is representative of c-Si wafer surface conditions very well. We carried out that the deposition of high quality hydrogenated silicon amorphous thin films by RF-PECVD systems having high density and low crystallinity which are results of effective medium approximation modeling and fitting using spectroscopic ellipsometer. We reached the cell efficiency 12.67% and 14.30% on flat and textured CZ c-Si wafer each under AM1.5G irradiation, adopting the optimized cleaning and deposition conditions that we made. As a result, we confirmed that spectroscopic ellipsometry is very useful analyzing methode for hetero-junction solar cells which need to very thin and high quality multi layer structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.147.2-148
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• 2016

Light management technology is very important for thin film solar cells, which can reduce optical reflection from the surface of thin film solar cells or enhance optical path, increasing the absorption of the incident solar light. Using proper light trapping structures in hydrogenated amorphous silicon (a-Si:H) solar cells, the thickness of absorber layers can be reduced. Instead, the internal electric field in the absorber can be strengthened, which helps to collect photon generated carriers very effectively and to reduce light-induced loss under long-term light exposure. In this work, we introduced a chemical etching technology to make honey-comb textures on glass substrates and analyzed the optical properties for the textured surface such as transmission, reflection and scattering effects. Using ray optics and finite difference time domain method (FDTD) we represented the behaviors of light waves near the etched surfaces of the glass substrates and discussed to obtain haze parameters for the different honey-comb structures. The simulation results showed that high haze values were maintained up to the long wavelength range over 700 nm, and with the proper design of the honey-comb structure, reflection or transmission of the glass substrates can be enhanced, which will be very useful for the multi-junction (tandem or triple junction) thin film a-Si:H solar cells.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.320-320
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• 2014

Amorphous silicon alloy (a-Si) solar cells and modules have been receiving a great deal of attention as a low-cost alternate energy source for large-scale terrestrial applications. Key to the achievement of high-efficiency solar cells using the multi-junction approach is the development of high quality, low band-gap materials which can capture the low-energy photons of the solar spectrum. Several cell designs have been reported in the past where grading or buffer layers have been incorporated at the junction interface to reduce carrier recombination near the junction. We have investigated profiling the composition of the a-SiGe alloy throughout the bulk of the intrinsic material so as to have a built-in electrical field in a substantial portion of the intrinsic material. As a result, the band gap mismatch between a-Si:H and $a-Si_{1-x}Ge_x:H$ creates a barrier for carrier transport. Previous reports have proposed a graded band gap structure in the absorber layer not only effectively increases the short wavelength absorption near the p/i interface, but also enhances the hole transport near the i-n interface. Here, we modulated the GeH4 flow rate to control the band gap to be graded from 1.75 eV (a-Si:H) to 1.55 eV ($a-Si_{1-x}Ge_x:H$). The band structure in the absorber layer thus became like a U-shape in which the lowest band gap was located in the middle of the i-layer. Incorporation of this structure in the middle and top cell of the triple-cell configuration is expected to increase the conversion efficiency further.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.68-69
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• 2007

To make cost-effective solar cells, We have to use low cost material or make short process time or high temperature process. In solar cells, formation of emitter is basic and important technique according to build-up P-N junction. Diffusion process using spin-on dopants has all of this advantage. In this paper, We investigated n+ emitter formation spin-on dopants to apply crystalline silicon solar cells. We known variation of sheet resistance according to variation of temperature and single-crystalline and multi-crystalline silicon wafer using Honeywell P-8545 phosphorus spin-on dopants. We obtain uniformity of sheet resistance within 3~5% changing RPM of spin coater.

• 한국항공우주학회지
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• 제37권10호
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• pp.1017-1026
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• 2009

우주비행체의 주 전력원인 태양전지 시스템은 태양광을 직접 바라본 상태에서 운용되어, 우주의 가혹한 열적/기계적 환경에 직접 노출되므로, 제작/시험 중 발생될 수 있는 미세한 균열, 정전기 및 열 충격 등이 궤도 운용 중 태양전지 시스템의 기능상실로 이어질 가능성을 갖는다. 또한 태양전지 시스템의 전력생성 기본 유닛인 태양전지에 발생된 미세한 균열 또는 열 충격에 따른 태양전지의 내부 파손의 발견을 위해서는 고가의 장비와 복잡한 시험 절차, 그리고 많은 시간을 필요로 하게 된다. 따라서 태양전지 시스템 기능의 건전성을 쉽고, 빠르게 확인하기 위해, 정성적인 태양전지 기능 건전성 평가 방법이 요구된다. 본 논문에서는 요즘 우주비행체에서 가장 많이 사용되는 갈륨-비소 계열의 다접합 태양전지가 갖는 전계발광현상을 이용해 복잡한 반도체 구조를 가지는 태양전지의 기능 건전성을 보다 간단하고 저비용으로 그리고 빠르게 평가하는 방법에 대한 이론적, 기술적 근거를 설명하였다. 또한 이를 실제의 우주용 태양전지 시스템에 적용하기 위한 기술적 사항들과 적용 제한 조건들에 대하여 기술하였다.

• 한국산학기술학회논문지
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• 제22권5호
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• pp.310-316
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• 2021

기존의 인공위성은 다기능·높은 성능을 가진 대형위성을 국가 단위에서 운용하는 것이 일반적이었으나 최근의 전기·전자 및 광학 기술의 경량 소형화 발전에 따라 점차 소형위성이 주목받고 있다. 크기와 무게가 감소됨에 따라 적은 비용으로 개발 및 발사가 가능하여 위성 개발에 진입장벽이 낮아지고 있으나, 인공위성의 전력공급에 필수적인 태양전지 패널의 경우 태양광에 효율적으로 노출되기 위해 넓은 표면적이 필요하여 소형화 및 경량화가 제한적이다. 우주용 태양전지는 우주선과 태양열, 온도와 같은 다양한 우주환경을 고려하여 제작되어야하고, 부피를 최적화하기 위해 전개 매커니즘을 적용하며 경량화 및 고효율화를 위하여 태양전지 셀의 구조적 재료적인 연구개발이 필요하다. 현재 태양전지 패널로 개발되어 운용되고 있는 제품들은 고효율화를 위하여 주로 InGaP/GaAs/Ge 소재의 3중구조를 적용하고 있다. 최근에는 초고효율 다층구조 태양전지를 위하여 4중접합 이상의 구조가 연구되고 있으며, 나아가 소재적으로 경량화에 유리한 유연박막 태양전지, 유기 및 유무기 하이브리드 태양전지 등이 차세대 소형위성용 태양전지로 주목받고 있다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.62.2-62.2
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• 2010

박막 실리콘 태양 전지는 저가격화 및 대량생산, 대면적화에 유리하다는 장점을 가지고 있다. 단점으로 지적되는 낮은 효율을 극복하기 위해 광흡수층의 밴드갭이 서로 다른 두 개 이상의 박막을 적층하여, 넓은 파장 대역의 빛을 효과적으로 흡수함으로써 광변환 효율을 올리기 위한 많은 연구가 이루어지고 있다. 서로 다른 밴드갭의 광흡수층을 가진 p-i-n 구조를 다중 적층하여 고효율의 태양 전지를 제작하기 위해서는 n-도핑층과, p-도핑층 간에 전자와 정공이 빠르게 재결합할 수 있는 터널 접합(Tunnel Recombination Junction)의 형성이 필수적이며, 이때 광손실이 최소화되도록 해야한다. 만약 터널 접합이 적절하게 형성되지 않으면 결합되지 않은 전자와 정공이 도핑층 사이에 쌓이게 되고, 도핑층 사이의 저항 증가로 태양 전지의 광변환 효율은 크게 하락한다. 이번 연구에서는 터널 접합이 잘 이루어지게 하기 위한 n-도핑층 및 p-도핑층 박막의 특성과, 터널 접합의 특성에 따른 적층형 태양 전지의 광효율 변화를 확인하였다. 광흡수층 및 도핑층은 TCO($SnO_2:F$, Asahi) 유리 기판 위에 PECVD를 사용하여 p-i-n 구조로 RF Power 조건에서 증착되었고, ${\mu}c$-Si 광흡수층의 경우에는 VHF Power 조건에서 증착되었다. 광흡수층이 a-Si/${\mu}c$-Si의 구조를 가지는 이중 접합 태양 전지에서 ${\mu}c$-Si n-도핑층/${\mu}c$-Si p-도핑층 사이의 터널 접합 실험 결과 n-도핑층 및 p-도핑층의 결정화도와 도핑 농도를 조절하여 터널 접합의 저항을 최소화했고, 터널 접합 특성이 이중 접합 셀의 광효율 특성과 유사한 경향을 보임을 확인하였다. 광흡수층이 a-Si/a-SiGe/${\mu}c$-Si의 구조를 가지는 삼중 접합 태양 전지 실험의 경우 a-Si과 a-SiGe 광흡수층 사이에 ${\mu}c$-Si n-도핑층/${\mu}c$-Si p-도핑층/a-SiC p-도핑층의 구조를 적용하여 터널 접합을 형성하였으며, ${\mu}c$-Si p-도핑층의 두께 및 박막 특성을 개선하여 광손실이 최소화된 터널 접합을 구현하였고, 삼중 접합 태양 전지에 적용되었다.