• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• Journal of Internet of Things and Convergence
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• v.9 no.3
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• pp.81-86
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• 2023

SSD (solid state disk), which is flash memory-based storage device, has the advantages of high density and fast data processing. Therefore, it is being utilized as a storage device for high-capacity data storage systems that manage rapidly increasing big data. However, flash memory, a storage media, has a physical limitation that when the write/erase operation is repeated more than a certain number of times, the cells are worn out and can no longer be used. In this paper, we propose a method for converting defective multi-bit cells into single-bit cells to reduce the defect rate of flash memory and extend its lifetime. The proposed idea distinguishes the defects and treatment methods of multi-bit cells and single-bit cells, which have different physical characteristics but are treated as the same defect, and converts the expected defective multi-bit cells into single-bit cells to improve the defect rate and extend the overall lifetime. Finally, we demonstrate the effectiveness of our proposed idea by measuring the increased lifetime of SSD through simulations.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.9
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• pp.1667-1671
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• 2015

Multi-level holographic data storage is a candidate for the next generation data storage system, since it can store more than one bit per pixel. It is possible to increase the number of codewords if the number of levels is increased, and the code with an appropriate selection of codewords can also increase the minimum distance. In this paper, we propose three multi-level modulation codes of the code rate 1 bit/pixel and compare the performance according to the minimum distance. The result shows that the code with small number of levels is better than that of large number of levels because it is hard to detect threshold value.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.80-83
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by $0.35\;{\mu}m$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the two-bits per cell operation, charges must be locally trapped in the nitride layer above the channel near the junction. Channel hot electron (CHE) injection for programming can operate in multi-bit using localized trap in nitride film. CHE injection in our devices is achieved with the single power supply of 5 V. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve were investigated. The multi-bit operation which stores two-bit per cell is investigated with a reverse read scheme. Also, hot hole injection for fast erasing is used. Due to the ultra-thin gate dielectrics, our results show many advantages which are simpler process, better scalability and lower programming voltage compared to any other two-bit storage flash memory. This fabricated structure and programming characteristics are shown to be the most promising for the multi-bit flash memory.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.13 no.7
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• pp.3794-3820
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• 2019

In recent years, a cloud environment with the ability to detect illegal behaviours along with a secured data storage capability is much needed. This study presents a cloud storage framework, wherein a 128-bit encryption key has been generated by combining deoxyribonucleic acid (DNA) cryptography and the Hill Cipher algorithm to make the framework unbreakable and ensure a better and secured distributed cloud storage environment. Moreover, the study proposes a DNA-based encryption technique, followed by a 256-bit secure socket layer (SSL) to secure data storage. The 256-bit SSL provides secured connections during data transmission. The data herein are classified based on different qualitative security parameters obtained using a specialized fuzzy-based classification technique. The model also has an additional advantage of being able to decide on selecting suitable storage servers from an existing pool of storage servers. A fuzzy-based technique for order of preference by similarity to ideal solution (TOPSIS) multi-criteria decision-making (MCDM) model has been employed for this, which can decide on the set of suitable storage servers on which the data must be stored and results in a reduction in execution time by keeping up the level of security to an improved grade.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.10
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• pp.10-14
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• 2016

Holographic data storage (HDS) features short access times, high storage capacities, and fast transfer rates since the data is recorded and read not by lines but by pages within a volume of holographic material. Furthermore, a single pixel can store more than 1 bit if it is multi-level. However, there is a problem of inter-symbol interference (ISI) between the adjacent symbols if the level difference between neighboring symbols is large. Hence, one should avoid side by side placement of the smallest level symbol and the largest level symbol in any direction. This paper proposes a 12/16 modulation code for 4-level holographic data storage, so that the largest symbol is 3 and the smallest symbol is 0, in order to reduce the ISI.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.9
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• pp.1672-1677
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• 2015

The multi-level holographic storage system can store more than one bit per pixel. In this paper, we introduce a 6-pixel 4-level modulation code and compare with 4-level 6/9 modulation code and 2/3 modulation code. The proposed 6-pixel modulation code has the minimum Euclidean distance 3. The 6-pixel modulation code is approximately 1dB better than the other modulation codes.

• Proceedings of the KSME Conference
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• 2001.06c
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• pp.451-456
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• 2001

Today, most of data storage devices use digital storage type. In this thesis, a new digital storage media called rainbow disk was introduced. It doesn't use 1-bit digital signal, but 2 or 4 bits digital signal using colors, so it can increase $2{\sim}4$ times more capacity than existing digital media in case of having the same spot size. It has made possible by means of technological advancement of devices and software. The photo quality paper was used for writing data by color inkjet or laser printing, and high resolution scanner was used for reading data. To extract data from image, the converting program was used. This paper shows the concept of rainbow disk as well as its performance and capacity. Axiomatic design was used for evaluating and developing the whole system.

• Journal of Internet of Things and Convergence
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• v.9 no.4
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• pp.9-14
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• 2023

Recently, resource optimization research has been actively conducted in enterprises and data centers to manage the rapid growth of big data. In particular, thin provisioning, which allocates a large number of resources compared to fixedly allocated storage resources, has the effect of reducing initial costs, but as the number of resources actually used increases, the cost effectiveness decreases and the management cost for allocating resources increases. In this paper, we propose a technique that divides the physical blocks of flash memory into single-bit cells and multi-bit cells, formats them with a hybrid technique, and manages them by dividing frequently used hot data and infrequently used cold data. The proposed technique has the advantage that the physical and allocated resources are the same, such as thick provisioning, and can be used without additional cost increase, and the underutilized resources can be managed in multi-bit cell blocks, such as thin provisioning, which can allocate more resources than typical storage devices. Finally, we estimated the resource optimization effectiveness of the proposed technique through experiments based on simulations.

• Journal of the Semiconductor & Display Technology
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• v.8 no.1
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• pp.13-17
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• 2009

In PRAM applications, the devices can be made for both binary and multi-state storage. The ability to attain intermediate stages comes either from the fact that some chalcogenide materials can exist in configurations that range from completely amorphous to completely crystalline or from designing device structure such a way that mimics multiple phase chase phenomena in single cell. We have designed stack-structured phase change memory cell which operates as multi-state storage. Amorphous $Ge_xTe_{100-x}$ chalcogenide materials were stacked and a diffusion barrier was chosen for each stack layers. The device is operated by crystallizing each chalcogenide material as sequential manner from the bottom layer to the top layer. The amplitude of current pulse and the duration of pulse width was fixed and number of pulses were controlled to change overall resistance of the phase change memory cell. To optimize operational performance the thickness of each chalcogenide was controlled based on simulation results.