• Journal of the Korean Electrochemical Society
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• v.3 no.3
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• pp.178-181
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• 2000

In this experiments, tin oxide thin film anode for microbattery was deposited by using RF magnetron sputtering. The RF power and operating pressure during deposition were fixed at $2.5W/cm^2$ and 10mTorr respectively. The partial pressure of oxygen was varied from $0\%\;to\;100\%$ to control oxygen content and metal Sn chips were used further reducing of oxygen content. According to reduction in the oxygen content formation of the irreversible $Li_2O$ was reduced a thin film anode of $SnO_x$ of high capacity was fabricated. The optimum $SnO_x$, thin film was $SnO_{1.43}$ which exhibited a reversible capacity of $ 500{\mu}Ah/cm^2{\mu}m$ and exhibited good reversibility.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.34-42
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• 2000

Recently, there is a growing need to develope small-size RF chip inductors operating to GHz to realize high-performance, micro-fabricated wireless communication products. For the development of high-performance RF chip inductors, however, the ferrite-based chip inductors can not be used above 300MHz due to the limitation of the permeability of this material. In this work, small-size, high-performance RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. Copper (Cu) with 40${\mu}m$ diameter was used as the coils and the chip inductor size fabricated in this work is $2.1mm{\times}1.5mm{\times}1.0mm$. The external current source was applied after bonding Cu coil leads to gold pads electro-plated on the bottom edges of a core material. The composition of core materials was measured using a EDX. High frequency characteristics of the inductance (L), quality factor (Q), and impedance (Z) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The developed inductors have the self-resonant frequency (SRF) of 1 to 3.5 GHz and exhibit L of 22 to 150 nH. The L of the inductors decreases with increasing the SRF. The Z of the inductors has the maximum value at the SRF and the inductors have the quality factor of 70 to 97 in the frequency range of 500 MHz to 1.5 GHz.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1521-1523
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• 2002

본 논문에서는 1.58 ${\times}$ 0.82 ${\times}$ 0.94 $mm^3$크기의 H 형태의 솔레노이드형 RF 칩 인덕터를 코일의 직경과 권선수를 변화시키면서 제작하였고, 그들의 고주파 성능을 비교 분석하였다. 저손실 $Al_2O_3$재료를 코아로 $30{\mu}m{\sim}40{\mu}m$의 여러 직경을 가진 Cu를 코일로 사용하였다. 인덕터의 인덕턴스(L), 품질계수(Q), 저항(R), 임피던스(Z) 그리고 커패시턴스(C) 등의 주파수 특성은 HP4291B로 측정하였다. 실험결과 동일권선수에 대해 코일직경이 자을수록 L, Q, R, 그리고 Z등이 증가하였고, 그 증가폭은 권선수가 클수록 커지는 경향이 있음을 알 수 있었다. 그러나 코일직경이 작을수록 기생 커패시턴스 효과가 빨리 나타나 자기 공진주파수 효과가 감소하는 경향을 보이고 있음을 확인하였다. 코일직경이 $3{\mu}m$이고 권선수가 6인 경우에 대표적인 값들은 다음과 같다. L=31.4nH(at 250MHz), Q=49.6(at 700MHz), R=0.362${\Omega}$(at 1MHz)

• Journal of IKEEE
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• v.11 no.4
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• pp.145-151
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• 2007

In this work, small-size, high-performance solenoid-type RF chip inductors utilizing a low-loss ${Al_2}{O_3}$ core material were investigated. The size of the chip inductors fabricated in this work were $0.86{\times}0.46{\times}0.45m^3$, $1.5{\times}1.0{\times}0.7m^3$, $2.1{\times}1.5{\times}1.0m^3$, and $2.4{\times}2.0{\times}1.4m^3$ and copper (Cu) wire with $27{\sim}40{\mu}m$ diameter was used as the coils. High frequency characteristics of the inductance, quality factor, and impedance of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). It was observed that the developed inductors with the number of turns of 7 have the inductance of 13 to 100nH and exhibit the self-resonant frequency (SRF) of 6.4 to 1.1GHz. The SRF of inductors decreases with increasing the inductance and the inductors have the quality factor of 50 to 80 in the frequency range of 300MHz to 1.3GHz. In this study, small-size solenoid-type RF chip inductors with high inductance and high quality factor were fabricated successfully.

• ETRI Journal
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• v.27 no.6
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• pp.685-690
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• 2005

DC and RF characteristics of $0.15{\mu}m$ GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The $0.15{\mu}m{\times}100{\mu}m$ MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of -0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4-inch wafer were 8.3% and 5.1%, respectively. The obtained cut-off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The $8{\times}50{\mu}m$ MHEMT device shows 33.2% power-added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T-shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.11
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• pp.894-901
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• 1991

Contact-type linear image sensors have been fabricated by means of RF glow discharge decomposition method of silane and hydrogen mixtures. The dependences of the electrical and optical properties of these sensor on thickness, RF power, substrate temperature and ambient gas pressure have been investigated. the ITO/i-a-Si:H/Al structure film shows photosensitivity of 0.85 and photocurrent to dark current ratio ($I_{ph}/I_{d}$) of 150 at 5V bias voltage under 200${\mu}W/cm^[2}$ red light intensity. Under 200${\mu}W/cm^[2}$ green light intensity, the ratio is 100. In order to investigate photocarrier transport mechanism and to obtain ${\mu}{\gamma}$ product we have measured the I-V characteristics of these sensors favricated with several different deposition parameters under various light sources. The linear inage sensor for document reading has been operated under reverse bias condition with green light source, resulting in ${\mu}{\gamma}$ product of about 1.5$[\times}10^{-9}cm^{2}$/V.

• Journal of the Korean Vacuum Society
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• v.12 no.2
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• pp.136-143
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• 2003

In this paper, high purity RF sputter-type ion source for non-mass separated ion beam deposition was evaluated. The fundamental characteristics of the ion source which is composed of an RF Cu coil and a high purity Cu target (99.9999 %) was studied, and the practical application of Cu thin films for ULSI metallization was discussed. The relationship between the DC target current and the DC target voltage at various RF power and Ar gas pressures was measured, and then preparation conditions for Cu thin films was described. As a result, it was found that the deposition conditions of the target voltage, the target current and the Ar pressure were optimized at -300 V, 240 W and 9 Pa, respectively. The resistivity of Cu films deposited at a bias voltage of -50 V showed a minimum value of 1.8 $\pm$ 0.1 $mu\Omega$cm, which is close to that of Cu bulk (1.67 $mu\Omega$cm).

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.4
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• pp.32-38
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• 2011

This paper describes implementation of the 5.0GHz RF frequency synthesizer with 0.18${\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4 USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma}-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get excellent performance of high speed and wide tuning range, N-P MOS core structure and 12 step cap banks have been used in design of the VCO. The chip area including pads for testing is $1.1{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.0{\times}0.4mm^2$. Through analysing of the fabricated frequency synthesizer, we can see that it has wide operation range and excellent frequency characteristics.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.45 no.6
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• pp.87-93
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• 2008

This paper describes implementation of the 5.0GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4 USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma}-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.1*0.7mm^2$, and the chip area only core for IP in SoC is $1.0*0.4mm^2$. Through comparing and analysing of the designed two kind of the frequency synthesizer, we can conclude that if we improve a litter characteristics there is no problem to use their as IPs.

• Journal of Life Science
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• v.25 no.3
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• pp.293-298
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• 2015

Muscle atrophy, known as a sarcopenia, is defined as a loss of muscle mass resulting from a reduction in the muscle fiber area or density due to a decrease in muscle protein synthesis and an increase in protein breakdown. Schisandrae fructus (SF) extract of the fruits of Schisandra chinensis (Turcz) Baillon has been used as a tonic in traditional medicine for thousands of years. Although a great deal of work has been carried out on the therapeutic potential of SF, its pharmacological mechanisms of action in muscle diseases actions remain unclear. In the present study, we investigated the inhibitory effects of SF ethanol extracts on the production of muscle atrophy factors in C2C12 myotubes stimulated with 5-aminoimidazole-4-carboxamide-ribonucleotide (AICAR), an AMP-activated kinase (AMPK) activator, and sought to determine the underlying mechanisms of action. AICAR upregulated atrophy-related ubiquitin ligase muscle RING finger-1 (MuRF-1) and stimulated the levels of the forkhead box O3a (FoxO3a) transcription factor in the C2C12 myotubes. SF supplementation effectively and concentration- dependently counteracted AICAR-induced muscle cell atrophy and reversed the increased expression of MuRF-1 and FoxO3a. Our study demonstrates that SF can reverse the muscle cell atrophy caused by AICAR through regulation of the AMPK and FoxO3a signaling pathways, followed by inhibition of MuRF-1.