• Journal of the Korean Vacuum Society
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• v.9 no.4
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• pp.419-427
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• 2000

We propose a method to obtain various diffusion parameters of deposited atom. By comparing the results of kinetic Mote Carlo (KMC) simulation with the results of STM, HRLEED experiments, we can determine diffusion parameters including the hopping barrier of an adatom on terrace, detachment barrier at the step edge, and well known Schwoebel barrier. It is found that the branch-width, island density, and roughness were suitable atomic scale structure parameters for comparing simulation calculation with experimental results, and especially, it is found that the parameter branch-width which is not widely used in thin film growth study, plays an important role in determining diffusion barriers.

• Journal of Advanced Navigation Technology
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• v.23 no.3
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• pp.245-250
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• 2019

Inertial navigation system has navigation errors because of the error of inertial measurement unit (IMU) and misalignment over time. In order to solve this problem, aided navigation system is performed using global navigation satellite system (GNSS), speedometer, etc. The inertial navigation system equipped with underwater vehicle mainly uses speedometer and performed aided navigation because satellite signals do not pass through underwater. There are DVL, EM-Log, and RPM in the speedometer, and the sensors are applied according to the system environment. This paper describes velocity aided navigation using RPM of inertial navigation system operating in high speed and deep water environment. In addition, we proposes an algorithm to compensate the limit of RPM with straight direction and the current velocity error. There are results of monte-calo simulation to prove performance of the proposed algorithm.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.11
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• pp.112-119
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• 1996

Impact ionization model in GaAs has been presented by modified keldysh formula with two sets of power exponent of 7.8 and 5.6 in study. Impact ionization rate is derived from fermil's golden rule and ful lenergy band stucture based on empirical pseudopotential method. Impact ionization rates show anisotropic property in low energy region (<3eV), but isotropic in high energy region (3>eV). Full band monte calo simulator is coded for investigating the validity of the GaAs impact ionization model, and validity is checked by comparing impact ionization coefficients with experimental values and ones in anisotropic model. Valley transitions to energy alteration are explained by investigating electron motion in brillouin zone for full band model to electric field variation.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.8 no.6
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• pp.119-125
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• 2008

In this paper, we proposed the modeling of UHF frequency environment in a random mountainous area with line of sight. A transmitting station is defined as wanted transmitter(Wr) and a receiving station is defined as victim receiver(Vr). These set up victim link. A interference transmitter(It) and wanted receiver(Wr) set up interference link. We compared measured data at random mountainous area with data of the result using spectrum engineering advanced monte calo analysis tool(SEAMCAT), interference simulation based on the monte-carlo method. The desired received signal strength(dRSS) of SEAMCAT had the calculated error of 70% from the measured received signal strength because there was a topographical effect. Therefore, the effect of diffraction interference was included to lessen the power of transmitter in the proposed simulation. The cause of received power error are cable loss and errors of a measuring instrument. The proposed simulation modeling in UHF frequency environment expect that is the useful study on interference analysis and reassignment of broadcasting frequency.

• Korean Journal of Optics and Photonics
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• v.16 no.3
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• pp.275-286
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• 2005

The performance of the InGaN LED's in terms of the photon extraction efficiency has been analyzed by the Monte Carlo photon simulation method. Simulation results show that the sidewall slanting scheme, which works well for the AlInGaP or InGaN/SiC LED, plays a very minimal role in InGaN/sapphire LED's. In contrast to InGaN/SiC LED's, the lower refractive index sapphire substrate restricts the generated photons to enter the substrate, minimizing the chances for the photons to be deflected by the slanted sidewalls of the epitaxial semiconductor layers that are usually very thin. The limited photon transmission to the sapphire substrate also degrades the. photon extraction efficiency especially in the epitaxial-side down mount. One approach to exploit the photon extraction potential of the epitaxial-side down mount may be to texture the substrate-epitaxy interface. In this case, randomized photon deflection off the textured interface directly increases the number of the photons entering the sapphire substrate, from which they easily couple out of the chip and thereby improving the photon extraction efficiency drastically.