• 한국산업융합학회 논문집
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• 제7권3호
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• pp.259-263
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• 2004

In the manufacture progress of LCD or semiconductor, there are used many kinds of gas like erosion gas, dilution gas, toxic gas as a progress which used these gas there are required high puritize to increase accumulation rate of semiconductor or LCD materials work progress of semiconductor or LCD it demand many things like the material which could minimize metallic dust that could be occured by reaction between gas and transfer pipe laying material, illumination of the surface, emition of the gas, metal liquation, welding etc also demand quality geting stricted. Material-Low-sulfur-contend (0.007-0010), vacuum-arc-remelt(VAR), seamless, high-purity tubing material is recommend for enhance welding lower surface defect density All wetted stainless steel surface must be 316LSS elecrto polishinged with ${\leq}0.254{\mu}m$($10.0{\mu}in$) Ra average surface finish, $Cr/Fe{\geq}1.1$ and $Cr_2O_3$ thickness ${\geq}25{\AA}$ From the AES analytical the oxide layer thickness (23.5~36 angstroms silicon dioxide equivalent) and chromum to iron ratios is similar to those generally found on electropolished stainless steel., molybdenum and silicon contaminants ; elements characteristic of stainless steel (iron, nickel and chromium); and oxygen were found on the surface Phosphorus and nitrogen are common contaminants from the electropolish and passivation steps.

• 공업화학
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• 제26권4호
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• pp.406-412
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• 2015

일방향의 탄소/탄소 복합재료는 탄화 매트릭스의 전구체인 페놀수지를 사용하여 단일 공정을 통하여 제조하였으며, 탄소/탄소 복합재료의 밀도와 기계적 물성을 향상시키기 위하여 페놀수지에 산화몰리브덴($MoO_3$)과 바인더 피치를 첨가하였다. 본 연구에서는 $MoO_3$와 바인더 피치 첨가로 인한 탄소/탄소 복합재료의 기계적 물성에 미치는 영향에 대해 굴곡강도와 층간전단강도 측정을 통하여 고찰하였다. 결과적으로 $MoO_3$와 바인더 피치가 첨가된 탄소/탄소 복합재료들은 탄소섬유와 매트릭스간의 계면결합력 증가로 인하여 기계적 물성이 향상됨을 관찰할 수 있었다. 이는 $MoO_3$와 바인더 피치를 첨가함으로써 탄소/탄소 복합재료의 흑연구조가 발달함과 동시에 밀도를 향상시킬 수 있음을 나타낸다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.36.1-36.1
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• 2010

While the substrate-type solar cells with Cu(In,Ga)Se2 absorbers yield conversion efficiencies of up 20%[1], the highest published efficiency of Cu(In,Ga)Se2 superstrate solar cell is only 12.8% [2]. The commerciallized Cu(In,Ga)Se2 solar cells are made in the substrate configuration having the stacking sequence of substrate (soda lime glass)/back contact (molybdenum)/absorber layer (Cu(In,Ga)Se2)/buffer layer (cadmium sulfide)/window layer (transparent conductive oxide)/anti reflection layer (MgF2) /grid contact. Thus, it is not possible to illuminate the substrate-type cell through the glass substrate. Rather, it is necessary to illuminate from the opposite side which requires an elaborate transparent encapsulation. In contrast to that, the configuration of superstrate solar cell allows the illumination through the glass substrate. This saves the expensive transparent encapsulation. Usually, the high quality Cu(In,Ga)Se2 absorber requires a high deposition temperature over 550C. Therefore, the front contact should be thermally stable in the temperature range to realize a successful superstrate-type solar cell. In this study, it was tried to make a decent superstrate-type solar cell with the thermally stable ZnO:Al layer obtained by adjusting its deposition parameters in magnetron sputtering process. The effect of deposition condition of the layer on the cell performance will be discussed together with hall measurement results and current-voltage characteristics of the cells.

• 한국분말재료학회지
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• 제14권6호
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• pp.386-390
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• 2007

The sintering behavior and mechanical property of Mo nanopowder was investigated as a function of various sintering condition. Mo oxide nanopowders were milled using a high energy ball-milling process. After the ball milling for 20h, the crystalline size of $MoO_3$ was about 20 nm. The $MoO_3$ nanopowders were reduced at the temperature of $800^{\circ}C$ without holding time in $H_2$ atmosphere. The sinterability of Mo nanopowder and commercial Mo powder was investigated by dilatometric analysis. Mo nanopowder and commercial Mo powder were sintered at $1200^{\circ}C$ for 1 hand $1500^{\circ}C$ for 3 h, respectively. In both specimens the measured relative density was about 95%. But the measured hardness values were 2.34 GPa for nanopowder and 1.87 GPa for commercial powder. Probably due to finer grain size of the sintered body prepared from Mo nanopowder than that prepared using commercial Mo powder. The mean grain sizes were measured to be about 1.4 mm and 6.2 mm, respectively.

• 한국결정성장학회지
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• 제6권1호
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• pp.44-55
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• 1996

천연 베릴을 이용하여 $V_20_5$, $Mo0_3$, $Li_2O$계 융제 및 첨가제 조성, 베렬의 용해도 그 리고 결정성장 온도와 같은 결정성창 조건을 제어하여 에메랄드 단결정을 성장시켰다. Flux와 첨가제를 조정하여 저온($1100^{\circ}C$ 이하)에셔 용해성이 높은 과포화 용융체를 만들고 온도 구배 (${\Delta}t 100^{\circ}C$), 열진동 효과 등을 정멀 제어 조정하므로써 고품질의 대형 emerald 단결정을 성장 시킬 수 있었다. 성장된 에메랄드 단결정의 특성은 굴절률 : 1.56 - 1.57, 비중 : 2.65 - 2.67인 6각 주상($c^*m$ : 1000, 1010)의 취록색 투명 단결정이였다.

• 대한화학회지
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• 제29권3호
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• pp.257-264
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• 1985

메탄올 용액에서 3-메톡시살리실알데히드와 몰리브덴산암모늄으로 부터 디옥소비스메톡시살리실알데히다토 몰리브데늄(VI) 착물을 합성하고 이를 일차아민과 반응시켜 MoO$_2$(CH$_3$O-sal-N-R)$_2$, (R;일차아민)형의 시프-염기착물을 합성하였다. 이들에 대한 원소분석, 스펙트라의 해석 그리고 전기전도도의 측정으로 부터 착물의 성질과 그 구조를 추정하였다. 적외선 스펙트라에서 Mo=O 신축진동에 기인한 두 개의 흡수띠가 900cm$^{-1}$부근에서 관찰되었으며 이는 Mo(VI) 착물이 cis-MoO$_2$형으로 되어있음을 나타낸다. 또한 MoO$_2$와 배위자 사이의 결합비가 1:2임을 알 수 있었다. 이들 착물의 전자스펙트라에서 배위자로부터 금속으로 전하이동전이가 일어났다. 이들 착물은 노란색 혹은 오렌지색깔을 띠며 비극성물질로서 알코올이나 디클로로메탄, 클로로포름 및 디메틸프름 아마이드에 약간 녹인다.

• 한국전기전자재료학회논문지
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• 제30권8호
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• pp.525-529
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• 2017

Molybdenum oxide ($MoO_3$) offers pivotal advantages for high optical transparency and low light reflection. Considering device fabrication, n-type $MoO_3$ semiconductor can spontaneously establish a junction with p-type Si. Since the energy bandgap of Si is 1.12 eV, a maximum photon wavelength of around 1,100 nm is required to initiate effective photoelectric reaction. However, the utilization of infrared photons is very limited for Si photonics. Hence, to enhance the Si photoelectric devices, we applied the wide energy bandgap $MoO_3$ (3.7 eV) top-layer onto Si. Using a large-scale production method, a wafer-scale $MoO_3$ device was fabricated with a highly crystalline structure. The $MoO_3/p-Si$ heterojunction device provides distinct photoresponses for long wavelength photons at 900 nm and 1,100 nm with extremely fast response times: rise time of 65.69 ms and fall time of 71.82 ms. We demonstrate the high-performing $MoO_3/p-Si$ infrared photodetector and provide a design scheme for the extension of Si for the utilization of long-wavelength light.

• 한국주조공학회지
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• 제29권3호
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• pp.120-127
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• 2009

The characterestics of high Si-high Mo ductile cast iron, high Si-high Mo C.V. cast iron and Ni-resist cast iron were compared and evaluated. The nodule count of the last one was lower and the nodularity was higher than those for the first one, respectively. The first two had ferritic matrices with small amounts of molybdenum carbides. The first one had the highest tensile strength and the last one the lowest elongation. This had the highest high temperature strength and that of the second one was greatly increased from the room temperature strength. The volumes of the first two were decreased during cooling and that of the last one changed little. The thermal expansion coefficient of the last one was the highest and the first one the lowest. During high temperature oxidation, even though the volume of the first one was increased, the weight was decreased and the volume and weight of the second one were increased. The change of the increased weight of the last one was more than that of thickness.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.449-449
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• 2010

유기발광소자(organic light-emitting diodes, OLEDs)는 저공정비용, 경량화, 가용성 및 대면적화 등의 장점으로 조명 분야와 디스플레이 분야로의 응용 가능성으로 인해 크게 주목을 받아 왔다. 이러한 OLED 소자의 고효율, 고휘도 및 저소비전력 등을 구현하기 위해서는 전극으로부터 전하 주입 층으로 효율적인 전하 주입이 요구된다. 즉, 각 전극의 폐르미 준위로부터 전하 전도준위대로의 전하주입 장벽이 없어야 한다. 본 연구에서는 홀 주입장벽이 없는 정공주입 층으로 $MoO_x$(molybdenum oxide)가 도핑된 NPB(N, N'-diphenyl-N, N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine) 층을 사용하여 hole-only 소자를 제작하고 전류-전압 특성을 통해 양극으로부터 홀주입 층으로의 hole-ohmic 특성을 고찰했다. 또한, 전자 주입장벽이 없는 전자주입 층으로 $C_{60}$(fullerene)/LiF(lithum fluoride)의 이종 층을 사용하여 electron-only 소자를 제작하고 음극으로부터 전자주입 층으로의 전자 ohmic 특성을 조사했다. 또한, 전극으로부터 전하주입 층으로 ohmic 특성을 더 자세히 이해하기 위하여 전하주입 층의 자외선 광방출 스펙트럼(ultraviolet photoemission spectra)을 조사했다. 한편, glass/ITO/$MoO_x$-doped NPB (x%: x=0,25, 50 및 75; 5nm)/NPB (63nm)/$Alq_3$ (37nm)/$C_{60}$ (5nm)/LiF (1nm)/Al (100nm)로 구성된 all-ohmic OLED 소자의 발광특성은 $MoO_x$의 도핑 농도가 25%이상일 때 최적의 특성을 보여줬다. 이러한 현상은 정공주입 층에서 p형 도핑 농도의 증가에 따른 정공 농도의 증가에 기인한다. 또한 $MoO_x$의 도핑 농도의 증가에 따라 정공주입 층의 new gap state와 전극의 페르미 준위의 pinning에 기인한다. 25%의 $MoO_x$을 가진 OLED소자는 7.2V의 낮은 전압에서 $58300 cd/m^2$의 높은 휘도를 보여줬다.

• Bulletin of the Korean Chemical Society
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• 제10권1호
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• pp.8-12
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• 1989

The polycrystalline powder of (BaLa)(MgMo)$O_6$ has been prepared at $1350^{\circ}C$ in a nitrogen flowing atmosphere. The powder X-ray diffraction pattern indicates that (BaLa)(MgMo)$O_6$ has a cubic perovskite structure ($a_0$ = 8.019(3) $\AA)$ with 1:1 ordering or $Mg^{2+}$ and $Mo^{5+}$ in the oxide lattice. The infrared spectrum shows two strong absorption bands with their maxima at 600(${\nu}3$) and 365(${\nu}4$) cm-1, which are attributed to $2T_{1U}$, modes of molybdenum octahedra MoO6 in the crystal lattice. According to the magnetic susceptibility measurement, the compound shows a paramagnetic behavior which follows the Curie-Weiss law below room temperature with the effective magnetic moment 1.60(1){$\mu}B$, which is consistent with that of spin only value ($1.73{\mu}B$) for $Mo^{5+}$ ($4d^1$ electronic configuration). From the thermogravimetric and X-ray diffraction analyses, it has been found that (BaLa)(MgMo)$O_6$ decomposes gradually into $BaMoO_4$, $MoO_3$ and unidentified phases above $900^{\circ}C$ in an ambient atmosphere, absorbing about 0.25 mole $O_2$ per mole of Mo ion, which also supports that oxidation state of $Mo^{5+}$ in the (BaLa)(MgMo)$O_6$.