• Bulletin of the Korean Chemical Society
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• v.27 no.6
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• pp.808-816
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• 2006

Among the many forms of mesoporous materials, thin films are important for the potential applications of this class of materials. Compared with the powder forms, however, there has been relatively little work done on thin films probably because of the lack of suitable and generalized synthetic mechanisms established. In this account, we will review the issues on mesoporous thin films with emphasis on the necessity of forming films with accessible pores from the film surfaces and on mesoporous thin films with metal oxides other than silica. Various methods that have been tried to utilize mesoporous thin films with accessible pores as templates for the synthesis of nanostructured materials are reviewed with the emphasis on the advantages of the electrochemical deposition technique.

• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2237-2242
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• 2011

Anomalous scaling behaviors such as significantly large growth exponent (${\beta}$) and small reciprocal of dynamic exponent (1/z) values for many molecular crystalline thin films have been reported. In this study, the variation of scaling exponent values and consequent growth behaviors of molecular thin films were more quantitatively analysed using a (1+1)-dimensional surface lateral diffusion model. From these simulations, influence of step edge barriers and grain boundaries of molecular thin films on the various scaling exponent values were elucidated. The simulation results for the scaling exponents were also well consistent with the experimental data for previously reported molecular thin film systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.310-310
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• 2012

ZnO thin films were grown on porous silicon (PS) by plasma-assisted molecular beam epitaxy (PA-MBE). The optical properties of the ZnO thin films grown on PS were studied using room-temperature, low-temperature, and temperature-dependent photoluminescence (PL). The full width at half maximum (FWHM) of the near-band-edge emission (NBE) from the ZnO thin films was 98 meV, which was much smaller than that of ZnO thin films grown on a Si substrate. This value was even smaller than that of ZnO thin films grown on a sapphire substrate. The Huang-Rhys factor S associated with the free exciton (FX) emission from the ZnO thin films was found to be 0.124. The Eg(0) value obtained from the fitting was 3.37 eV, with ${\alpha}=3.3{\times}10^{-2}eV/K$ and ${\beta}=8.6{\times}10^3K$. The low- and high-temperature activation energies were 9 and 28 meV, respectively. The exciton radiative lifetime of the ZnO thin films showed a non-linear behavior, which was established using a quadratic equation.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.4
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• pp.395-399
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• 2008

The purpose of this paper is to investigate the fabrication of P(VDF-TrFE) organic thin films through the vapor deposition method and the piezoelectric properties of the organic thin films thus produced. Vapor deposition was performed under the following conditions: the working temperature, and the pressure of reaction chamber were $300^{\circ}C$, and $2.0{\times}10^{-5}$ Torr, respectively. The molecular structure and crystallinity of the evaporated organic thin films were evaluated by using a FT-IR (Fourier-Transform Infrared spectroscopy) and XRD (X-ray diffractometry), The results showed that crystallinity increased with an increase in the substrate temperature. When the P(VDF-TrFE) organic thin films were fabricated by increasing the substrate temperature, its piezoelectric coefficient($d_{33}$) increased.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.87-92
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• 2016

The effects of selenization pressure on the structural, optical and electrical properties of the CIGS thin films prepared by RF magnetron sputtering using a single quaternary target were investigated. At selenization pressures lower than atmospheric pressure, CIGS thin films formed non-stoichiometric compounds due to deficiencies of Se vapor. In contrast, when selenization process was conducted at above atmospheric pressure, the residence time of Se vapor inside the tube increased so that the Se element could be incorporated within vacant sites of the CIGS structure, resulting in the formation of stoichiometric CIGS thin films. High quality CIGS thin films could be obtained when the selenization process was performed at pressures greater than atmospheric and $550^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.828-833
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• 2000

Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.111-114
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• 2000

Growth characteristics and microstructure of AlN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the microstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2481-2485
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• 2007

Spatially resolved, quantitative, non-destructive analysis using synchrotron x-ray reflectivity (XR) with subnano-scale resolution was successfully performed on the nanoporous organosilicate thin films for low dielectric applications. The structural information of porous thin films, which were prepared with polymethylsilsesquioxane and thermally labile 4-armed, star-shaped poly(ε-caprolactone) (PCL) composites, were characterized in terms of the laterally averaged electron density profile along with a film thickness as well as a total thickness. The thermal process used in this work caused to efficiently undergo sacrificial thermal degradation, generating closed nanopores in the film. The resultant nanoporous films became homogeneous, well-defined structure with a thin skin layer and low surface roughness. The average electron density of the calcined film reduced with increase of the initial porogen loading, and finally leaded to corresponding porosity ranged from 0 to 22.8% over the porogen loading range of 0-30 wt%. In addition to XR analysis, the surface and the inner structures of films are investigated and discussed with atomic force and scanning electron microscopy images.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.98-100
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• 1989

Langmuir-Blodgett(LB) technique will be used to produce ultra thin film, and then characterization of the physical and electrical properties of LB ultra thin films, this study will be an investigation for the possibilities of the ultra thin films as an Molecular Electronic Device.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.289-289
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• 2011

The conducting polymer thin films were deposited using the gas phase method which known as molecular layer deposition (MLD). Terephthalaldehyde (TPA) and p-phenylenediamine (PD) were used as monomers to deposit conducting polymer. Self-terminating nature of TPA and PD reaction were demonstrated by growth rate saturation versus precursors dosing time. Infrared spectroscopic and X-ray photoelectron spectroscopy were employed to determine the chemical composition and state of conducting polymer thin films. Layer by layer growth and polymerization of thin films can be showed by shifting of absorption edge using UV-VIS spectroscopy. This conducting polymer fabricated by using MLD method gives the opportunity to develop new hybrid materials by combining inorganic materials in nanoscale.