• Journal of the Optical Society of Korea
• /
• v.17 no.1
• /
• pp.33-37
• /
• 2013

In this study a new design concept of the Fabry-Perot filter, constructed with an anisotropic space layer and a couple of isotropic mirrors, was proposed based on the Maxwell equations and the characteristic matrix method. The single- and double-cavity Fabry-Perot filters were designed, and their optical properties were investigated with a developed software package. In addition, the dependence of the transmittance and phase shift for two orthogonal polarization states on the column angle of the anisotropic space layer and the incidence angle were discussed. We demonstrated that the polarization state of electromagnetic waves and phase shifts can be modulated by exploiting an anisotropic space layer in a polarization F-P filter. Birefringence of the anisotropic space layer provided a sophisticated phase modulation with varied incidence angles over a broad range, resulting in a wide-angle phase shift. This new concept would be useful for designing optical components with isotropic and anisotropic materials.

• Proceedings of the Optical Society of Korea Conference
• /
• 1990.02a
• /
• pp.73-78
• /
• 1990

1.3${\mu}{\textrm}{m}$ DFB with absorption grating of 1.55${\mu}{\textrm}{m}$ InGaAsP layer was fabricated. This new type of DFB laser shows self-plusation for DC operation. At low level of injection the relation between the pulsation frequency and the injection current shows similar behavior with the relaxation oscillation of ordinary laser and at high level of injection the pulsation frequency decreases compared to the relaxation oscillation. Period doubling, period 3 and 4 were observed for AC modulation. In case of period doubling the waveform shows only one pulse within a period without any accompanying subsidiary pulses and the oscillation frequency was quite stable. The pulse widths as short as 58.5 ps was achieved with AC modulation. We propose the time division multiplexing application of this kind of DFB laser.

• Proceedings of the KSRS Conference
• /
• v.1
• /
• pp.39-42
• /
• 2006

The paper reports on the first experimental evidence for space-observed manifestation of the open ocean tsunami in the microwave radar backscatter (in C- and Ku-bands). Significant variations of the radar cross section synchronous with the sea level anomaly were found in the geophysical data record of the altimetry satellite Jason-1 for the track which crossed the head wave of the catastrophic tsunami of 26 December 2004. The simultaneous analysis of the available complementary data provided by the satellite three-channel radiometer enabled us to exclude meteorological factors as possible causes of the observed signal modulation. A possible physical mechanism of modulation of short wind waves due to transformation of the thin boundary layer in the air by a tsunami wave is discussed. The results open new possibilities of monitoring tsunamis from space..

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.12
• /
• pp.142-148
• /
• 1995

Sb ${\delta}$-doped Si layers were grown by Si MBE (Molecular Beam Epitaxy) system using substrate temperature modulation technique. The Si substrate temperatures were modulated between 350$^{\circ}C$ and 600$^{\circ}C$. The doping profile was as narrow as 41$\AA$ and the doping concentration of up to 3.5${\times}10^{20}cm^{3}$ was obtained. The film quality was as good as bulk material as verified by RHEED (Reflected High Energy Electron Diffraction), SRP (Spreading Resistance Profiling) and Hall measurement. Since the film quality is not degraded after the growth a Sb ${\delta}$-doped Si layer, the ${\delta}$-doped layers can be repeated as many times as we want. The doping technique is useful for many Si devices including small scale devices and those which utilize quantum mechanical effects.

• ETRI Journal
• /
• v.23 no.3
• /
• pp.121-128
• /
• 2001

In this paper, the theoretical as well as experimental results of BER characteristics of three different modulation schemes, ASK, FSK and BPSK, in a multi-path Rician channel are addressed. These BER characteristics are analyzed as a function of $E_b/N_o$ and the power ratio of the line of sight (LOS) component to the Rayleigh scattered component. The theoretical as well as computer simulation results shows the ASK is the most suitable modulation scheme for the dedicated short range communication (DSRC) in terms of implemental cost and system complexity. The decision feedback equalizer is proved to be very effective in canceling the multi-path interference in the DSRC channel environment. The simulation result of the equalized ASK, reveals the performance enhancement achievable with decision feedback (DFE) equalizer for the first generation DSRC system. The multi-ray DSRC channel model is also provided to predict the received carrier power and fluctuation, which are quite dependent on the surroundings of a cell.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.4
• /
• pp.148-151
• /
• 2011

We designed and fabricated aluminium gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) with stable reverse blocking characteristics established by employing a selective fluoride plasma treatment on the drainside gate edge region where the electric field is concentrated. Implanted fluoride ions caused a depolarization in the AlGaN layer and introduced an extra depletion region. The overall contour of the depletion region was expanded along the drift region. The expanded depletion region distributed the field more uniformly and reduced the field intensity peak. Through this field modulation, the leakage current was reduced to 9.3 nA and the breakdown voltage ($V_{BR}$) improved from 900 V to 1,400 V.

• Journal of the Korean Vacuum Society
• /
• v.18 no.4
• /
• pp.245-253
• /
• 2009

For the growth optimization of InAs/GaSb (8/8-ML) strained-layer superlattice (SLS), the structure has been grown under various conditions and modes and characterized by the high-resolution x-ray diffraction (XRD) analysis. In this study, the strain modulation is induced by changing parameters and modes, such as the growth temperature, the ratio of V/III beam-equivalent-pressure (BEP), and the growth interruption (GI), and the strain variation is analyzed by measuring the angle separation of 0th-order satellite peak in XRD patterns. The XRD results reveal that the growth temperature and the V/III(Sb/Ga) ratio are major parameters to change the crystallineity and the strain modulation in SLS structures, respectively. We have observed that the SLS samples with compressive strain prepared in this study are show a transition to tensile strain with decreasing V/III(Sb/Ga) ratio, and the GI process is a sensitive factor giving rise to strain modulation. These results obtained in this study suggest that optimized growth temperature and V/III(Sb/Ga) ratio are $350^{\circ}C$ and 20, respectively, and the appropriate GI time is approximately 3 seconds just before InAs growth that the crystallineity is maximized and the strain relaxation is minimized.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1956-1958
• /
• 1999

The analysis of hole injection efficiency at the p+/n-drift layer junction in non-punchthrough IGBT structure is presented. This analysis takes into account carrier concentration variations by conductivity modulation. Good agreement between this analysis and simulation is found over a wide range of carrier lifetime and current density. The proposed analytical model of the hole injection efficiency as a function of collector width, collector concentration has been verified by device simulator, ATLAS.

• Journal of the Korean Vacuum Society
• /
• v.2 no.4
• /
• pp.468-473
• /
• 1993

Damages on Si substrate induced by Ar ion implantation and it annealing behavior during rapid thermal annealing were investigated by the cross-sectional TEM (transmissin electron microscopy), RB(Rutherfordbackscattering) spectra an dthermal wave (TW) modulation reflectance methods. Continuous amorphous layer extending to the surface were generated by Ar ion implantation for higher doses than 1 $\times$1015cm-2. The recrystallization of the amorphous layer prodeeded as the annealing temperature increased . However the amorphous /crystal interfacial undulations caused the micro twins and damage clusters. Damage clusters generated by lower doses than 1 $\times$1015 cm-2 disappeared slowly as the annealing temperature increased, but even at 110$0^{\circ}C$ a few damage clusters still remained.

• Journal of Information Display
• /
• v.10 no.1
• /
• pp.19-23
• /
• 2009

In this paper, we review the proposed liquid crystal display (LCD) with a tunable viewing angle consisting of a conventional liquid crystal display (LCD) panel and a thermally variable retardation layer (TVRL) characterized by uniformly aligned LC film with transparent indium-tin-oxide electrodes for Joule heating. In the TVRL, nematic phase is transitioned into isotropic by Joule heating. The numerical calculation showed that the intrinsic wide viewing angle was achieved at the isotropic phase of the TVRL by Joule heating, whereas the narrow viewing angle was obtained at the nematic phase of the TVRL. The simulated and experimental results of the proposed LCD show continuous and symmetrical viewing angle characteristics by tuning the retardation of TVRL using Joule heating. The structure of the viewing angle control proposed here is adoptable to all LCD modes with wide viewing angle characteristics.