• 대한한방소아과학회지
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• 제24권1호
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• pp.57-64
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• 2010

Objectives This study is to examine case that has an significant result on treating Polyarticular Type Juvenile Idiopathic Arthritis(JIA) the patient who did not response to DMARDs and NSAIDs with oriental medicine. JIA is the most common form of persistent arthritis in children before age 16. The symptoms of JIA is pain and edema of joints, fever, lethargy, reduced physical activity, and poor appetite. But the symptoms vary. Methods The patient felt pain and had limitation of mobility on his joints, but the DMARDs and NSAIDs were not effective. Therefore, he was treated with oriental medicine and withdrew from DMARDs and NSAIDs. The patient took DMARDs and NSAIDs from May 2007 to November 2008(He did not took DMARDs and NSAIDs from December 2007 to June 2008), and took oriental medicine from November 2008 until now. Results The patient's pain and limited mobility on his joints, edema, morning stiffness, fatigue was gone, and could maintain the condition. He doesn't have DMARDs or any other western medicine anymore. Conclusions This study shows that a Polyarticular Type Juvenile Idiopathic Arthritis patient who had ineffective response to DMARDs and NSAIDs can reach to the clinical remission by oriental medicine treatment. His morning stiffness, fatigue, pain of joints, edema was gone and ESR was in normal range with Oriental medicine treatment.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.171-171
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• 2010

GaN 기반 Light emitting diodes(LEDs)의 p-type doping layer는 일반적으로 hole을 발생시키는 acceptor로 Mg이 사용하되고 있다. 보통 Mg이 도핑된 p-type GaN은 >$1\;{\Omega}{\cdot}cm$의 저항이 존재하는데 그 이유는 Mg의 열적 이온화를 위한 activation 에너지가 높아서 상온에서 valence band의 hole concentration는 전체 억셉터 농도의 1%가 되지 않기 ��문이다. 본 논문에서는 높은 hole 농도를 얻기 위해서 metalorganic chemical-vapor deposition (MOCVD)를 장비를 사용하여 사파이어 기판의 misorientation-angle에 따른 p-type a-plane(11-20) GaN 특성을 분석하였다. misorientation-angle은 c축 방향으로 $+0.15^{\circ}$, $-0.15^{\circ}$, $-0.2^{\circ}$, $-0.4^{\circ}$ off된 r-plane(1-102) 사파이어 기판 을 사용하였다. p-type 도핑물질로 bis-magnesium (Cp2Mg) 소스를 사용하였고 성장 과정중 발생하는 hydrogen passivation으로 인한 Mg-H complexes현상을 해결하기위해 conventional furnace annealing (CFA)와 rapid thermal annealing (RTA)를 이용하여 열처리 공정을 진행하였다. 열처리 공정은 Air와 N2 분위기에서 $650^{\circ}C$에서 $900^{\circ}C$ 사이의 다양한 온도에서 수행하였고 Hall 측정을 위해 Ni을 전극 물질로 사용하였다. 상온에서 Accent HL5500IU Hall system을 사용하여 hole concentration, mobility, specific resistance을 측정하였다. 열처리 공정 후 Hall측정 결과 $+0.15^{\circ}$, $-0.15^{\circ}$, $-0.2^{\circ}$, $-0.4^{\circ}$ off된 각 샘플들은 온도, 시간, 분위기에 따라 hole concentration ($7.4{\times}10^{16}cm^{-3}{\sim}6{\times}10^{17}cm^{-3}$), mobility(${\mu}h=\;1.72\;cm^2/V-s\;{\sim}15.2\;cm^2/V-s$), specific resistance(4.971 ohm-cm ~8.924 ohm-cm) 가 변화됨을 확인 할 수 있었다. 또한 광학적 특성을 분석하기 위해 Photoluminescence (PL)을 측정하였다.

• 한국분말재료학회지
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• 제31권2호
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• pp.119-125
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• 2024

The n-type Bi_2-xSb_xTe₃ compounds have been of great interest due to its potential to achieve a high thermoelectric performance, comparable to that of p-type Bi_2-xSb_xTe₃. However, a comprehensive understanding on the thermoelectric properties remains lacking. Here, we investigate the thermoelectric transport properties and band characteristics of n-type Bi_2-xSb_xTe₃ (x = 0.1 - 1.1) based on experimental and theoretical considerations. We find that the higher power factor at lower Sb content results from the optimized balance between the density of state effective mass and nondegenerate mobility. Additionally, a higher carrier concentration at lower x suppresses bipolar conduction, thereby reducing thermal conductivity at elevated temperatures. Consequently, the highest zT of ~ 0.5 is observed at 450 K for x = 0.1 and, according to the single parabolic band model, it could be further improved by ~70 % through carrier concentration tuning.

• The Journal of Korean Physical Therapy
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• 제17권4호
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• pp.505-517
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• 2005

The Purposes of this study were to find complementary connectible new factors that analyzed correlation relate of Sasang Constitution and GCM Body Type in Static Posture and Dynamic Hyper/Hypo-mobility Pattern. Method of this study was asymtomatic volunteers 232(unmarried man and women), conducted from September 1 to December 31. In this main study progressing step diagnosised first, Constitution of Sasang medicine after being classified into four groups of Soyangin, Taeumin, Soeumin, Taeyangin diagnosis of GCM Body Type and progressed that related Static Posture and Dynamic Hyper/Hypo mobility Pattern. The results are as follows. Distribution of Sasang Medicine Constitution proved to be Taeyangin 13, Soyangin 66, Taeumin 67, Soeumin 86 respectively. Distribution of GCM Body Type proved I Body Type 72(31.0%), II Body Type 54(23.3%), III Body Type 89(38.4%), IV Body Type 17(7.3%). The distribution of Sasang Constitution according to GCM Body Type was that; I Body Type was distributed in the order Soeumin 34.7%(25), Taeumin 31.9%(23), Soyangin 30.6%(22), Soeumin 34.7%(25) is the most people. II Body Type was distribution of in the order Soeumin 42.6%(23), Soyangin 5.9%(14), Taeumin 24.1%(13), Soeumin 42.6%(23) is the most people. III Body Type was distribution of in the order Soeumin 37.1%(33), Taeumin 30.3%(27), Soyangin 28.1%(25), Soeumin 37.1% is the most people. IV Body Type proved high distribution each of Soeumin 29.4%(5) and Soyangin 29.4%(5). In case of main left side posture character of spine and limbs about I Body Type 72 persons with left scapular and ilium forward tilted pattern proved in the order high distribution iliac crest thigh and scapular high 70(97.2%), gluteal fold high and scapular abduction 69(95.8%), lumbar scoliosis 65(90.3%). Also, in case of right side posture character proved in the order high distribution deep gluteal fold 69(95.8%), umbilical deviation 68(94.4%). Incase of main left side posture character of spine and limbs about n Body Type 54 persons proved in the: order high distribution knee hyperextension 50(92.6%), shoulder deviation 49(90.7%) etc. Also, in case of right side posture character proved in the order high distribution pelvic deviation 53(98.1%), iliac crest thigh 52(96.3%), hip flexion and ankle inversion 51(94.4%) etc. In case of main left side posture character of spine and limbs about III Body Type 89 persons proved in the order high distribution shoulder deviation 87(97.8%), scapular abduction 86(96.6%), scapular high 85(95.5%) etc. And in case of right side posture character proved in the order high distribution pelvic deviation and iliac crest thigh 86(96.6%) etc. In case of main left side posture character of spine and limbs about IV Body Type 17 persons proved in the order high distribution pelvic deviation, lumbar sciliosis and lumbar lordosis increase 15(88.2%) etc. Also, in case of right side posture character proved in the order high distribution wrist dorsiflexion 16(94.1%), thickened achilles tendon etc.

• 한국진공학회지
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• 제8권2호
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• pp.148-152
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• 1999

the low temperature magnetoresistance effect, electron mobilities, and 2 Dimensional electron Gases (2DEG) properties were investigated in $Si/Si_{1-x}Ge_x$ quantum well devices. N-type $Si/Si_{1-x}Ge_x$ structures were fabricated by utilizing a gas source Molecular Beam Epitaxy (GSMBE). Thermal oxidation was carried out in a dry O atmosphere at $700^{\circ}C$ for 7 hours. Electron mobilities were measured by using a Hall effect and a magnetoresistant effect at low temperatures down to 0.4K. Pronounced Shubnikov-de Haas (SdH) oscillations were observed at a low temperature showing two dimensional electron gases (2DEG) in s tensile strained Si quantum well. The electron sheet density (ns) of $1.5\times10^{12}[\textrm{cm}^{-2}]$ and corresponding electron mobility of 14200 $[\textrm{cm}^2V^{-1}s^{-1}]$ were obtained at a low temperature of 0.4K from $Si/Si_{1-x}Ge_x$ structures with thermally grown oxides.

• 전기학회논문지P
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• 제53권4호
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• pp.171-174
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• 2004

The $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = $8.1686{\AA}$, b = $9.0425{\AA}$, c = $8.0065{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity was 1.080e-$3{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• 한국군사과학기술학회지
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• 제18권2호
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• pp.125-130
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• 2015

Vehicles and UGV(Unmanned Ground Vehicle) need a variety of road informations, such as road profile, soil type and soil water contents, to run a cross country course. Especially, soil water contents are very important factor to judge the vehicle mobility, because it can change soil strength. This paper describes the real-time measuring method of soil water contents by using the soil thermal conductivity.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.792-795
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• 2001

we present a electrical transport(resistivity, Hall effect) measurements in varying temperature ranges between 78K and 300K on HoSi$_2$ composites by hot-pressed sintering. It has been found that this sintered HoSi$_2$ has a orthorhombic structure, and lattices constant is a=9.8545$\AA$, b=7.7935$\AA$, c=7.8071$\AA$. The measured electrical resistivity is about 1.608$\Omega$ cm and carrier mobility is about 6.9$\times$10$^{1}$cm $^{2}$V.sec at low room temperature. The Hall effect shows a n-type conductivity in the sintered HoSi$_2$.

• Macromolecular Research
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• 제10권2호
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• pp.75-79
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• 2002

Organic materials have considerable attention as active semiconductors for device applications such as thin-film transistors (TFTs) and diodes. Pentacene is a p-type organic semiconducting material investigated for TFTs. In this paper, we reported the morphological and electrical characteristics of pentacene TFT films. The pentacene transistors showed the mobility of 0.8 $\textrm{cm}^2$/Vs and the grains larger than 1 ${\mu}{\textrm}{m}$. Deep-level transient spectroscopy (DLTS) measurements were carried out on metal/insulator/organic semiconductor structure devices that had a depletion region at the insulator/organic-semiconductor interface. The duration of the capacitance transient in DLTS signals was several ten of seconds in the pentacene, which was longer than that of inorganic semiconductors such as Si. Based on the DLTS characteristics, the energy levels of hole and electron traps for the pentacene films were approximately 0.24, 1.08, and 0.31 eV above Ev, and 0.69 eV below Ec.

• 전기학회논문지P
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• 제53권1호
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• pp.28-31
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• 2004

The results of investigations of Ag2Se single crystal are presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance $a=4.333{\AA}$, $b=7.062{\AA}$, $c=7.764{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity was $1.25{\times}10^3ohm^{-1}^cm{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).