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The Electrical Properties of Ag2Se Single Crystal  

Kim, Nam-oh (조선이공대학 전기과)
Min, Wan-Ki (조선이공대학 전기과)
Kim, Hyung-gon (조선이공대학 전기과)
Oh, Gum-kon (조선대학교 전기공학과)
Hyun, Seung-cheol (성화대학 안경광학과)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers P / v.53, no.1, 2004 , pp. 28-31 More about this Journal
Abstract
The results of investigations of Ag2Se single crystal are presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance $a=4.333{\AA}$, $b=7.062{\AA}$, $c=7.764{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity was $1.25{\times}10^3ohm^{-1}^cm{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).
Keywords
$Ag_2Se$ single crystal; Bridgman Method; Orthorhombic; Hall Effect; Conductivity; Mobility;
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