• 한국수소및신에너지학회논문집
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• 제20권3호
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• pp.238-244
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• 2009

We investigated the electrochemical properties of lithium/molybdenum sulfide(Li/MoS$_2$) using tetra (ethylene glycol) dimethyl ether(TEGDME) electrolyte. The Li/TEGDME/MoS$_2$ cell showed the first discharge capacity of 288mAhg$^{-1}$. From the XRD, SEM results of the MOS$_2$ electrode in various cut-off voltage during charge-discharge process, MoS$_2$ partly changed into Li$_2$S and Mo during discharge and Li$_2$S partly recovered into MOS$_2$ and Li during charge. Full charged MOS$_2$ electrode showed lump shape of big size, which might be related to agglomerate of MoS$_2$ particles. Therefore, the degradation might be related to decrease of active material for electrochemical reaction by agglomeration of MOS$_2$.

• 전기화학회지
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• 제2권3호
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• pp.150-155
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• 1999

[ $H_2-O_2$ ] 알칼리형 연료전지용 수소극으로서 아크융해법으로 제조된 Brewer-Engel type의 Co-Mo$(35\;wt\%)$ 및 Ni-Mo$(35\;wt\%)$ 금속간화합물 전극의 전기화학적 안정성이 조사되었다. $N_2$가스로 용존산소를 제거한 $80^{\circ}C$ 6N KOH 전해질 내에서 금속간화합물 전극의 전기화학적 안정성에 미치는 전해질의 농도 및 온도의 영향이 조사되었다. 또한, AFC의 정상 작동조건하에서는 Co-Mo및 Ni-Mo전극의 전기화학적 안정성에 대한 분극전압(과전압)의 영향이 논의되었다. Co-Mo전극은 Ni-Mo전극에 비하여 낮은 전기화학적 안정성을 보였다. 수소가스 평형전위로부터 낮은 양분극 과전압 하에서 Co-Mo전극에서는 Co와 Mo의 용해가 동시에 일어났다. 그러나, Co는 Mo에 비하여 급격히 용해되었다 높은 양분극 과전압에서는 전극표면에 $Co(OH)_2$ 부동태 피막이 형성되었다. Ni-Mo전극의 경우에는 Mo의 용해반응이 치밀한 $Ni(OH)_2$, 부동태 피막형성에 의하여 억제되어 우수한 전기화학적 안정성을 보였다.

• 전기전자학회논문지
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• 제21권2호
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• pp.170-173
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• 2017

본 연구에서는 Al, Mo 및 Pt 금속 물질을 a-IGZO 박막트랜지스터의 게이트 전극으로 플라스틱 기판 위에 형성하여 제작하고, 게이트 물질에 따른 전기적 특성을 측정하였다. Al 게이트 전극에 비해 Pt 게이트 전극을 사용한 박막트랜지스터의 문턱전압은 -4.1V에서 -0.3 V까지 감소하였고, 전하이동도는 $15.8cm^2/V{\cdot}s$에서 $22.1cm^2/V{\cdot}s$ 로 향상되었다. 게이트 전극에 따른 박막트랜지스터의 문턱전압 이동은 전극의 일함수와 채널층의 페르미 에너지 차이로 인한 영향이라는 것을 확인 할 수 있었다. 또한, 채널 물질의 페르미 에너지를 고려하였을 경우에 Pt 게이트 전극이 박막트랜지스터의 전기적 특성 면에서 적합한 물질로 확인되었다. 추가적으로 Mo 게이트 전극을 사용한 박막트랜지스터에 대한 특성도 본 논문에서 다룬다.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.475-481
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• 2013

By using ionic liquid 1-hexylpyridinium hexafluorophosphate ($HPPF_6$) based carbon ionic liquid electrode (CILE) as the substrate electrode, a $CoMoO_4$ nanorods and myoglobin (Mb) composite was casted on the surface of CILE with chitosan (CTS) as the film forming material to obtain the modified electrode (CTS/$CoMoO_4$-Mb/CILE). Spectroscopic results indicated that Mb retained its native structures without any conformational changes after mixed with $CoMoO_4$ nanorods and CTS. Electrochemical behaviors of Mb on the electrode were carefully investigated by cyclic voltammetry with a pair of well-defined redox peaks from the heme Fe(III)/Fe(II) redox center of Mb appeared, which indicated that direct electron transfer between Mb and CILE was realized. Electrochemical parameters such as the electron transfer number (n), charge transfer coefficient (${\alpha}$) and electron transfer rate constant ($k_s$) were estimated by cyclic voltammetry with the results as 1.09, 0.53 and 1.16 $s^{-1}$, respectively. The Mb modified electrode showed good electrocatalytic ability toward the reduction of trichloroacetic acid in the concentration range from 0.1 to 32.0 mmol $L^{-1}$ with the detection limit as 0.036 mmol $L^{-1}$ ($3{\sigma}$), and the reduction of $H_2O_2$ in the concentration range from 0.12 to 397.0 ${\mu}mol\;L^{-1}$ with the detection limit as 0.0426 ${\mu}mol\;L^{-1}$ ($3{\sigma}$).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.332.2-332.2
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• 2016

Two dimensional transition-metal dichalcogenides (TMDs) semiconductors are attractive materials for optoelectric devices because of their direct energy bandgap and transparency. To investigate the feasibility of transparent p-n junctions, we have fabricated a p-n heterojunction consisting of p-type WSe2 and n-type MoS2 flakes since WSe2 and MoS2 with proper electrode metals exhibit p-type and n-type behaviors, respectively. These heterojunctions exhibits gate-tunable rectifying behaviors and photovoltaic effects (ECE ~ 0.2%) indicating that p-n junctions were formed. In addition, photocurrent and photovoltaic effects were observed under light illumination, which were dependent on the gate voltage. In addition, the photocurrent mapping images indicate that the photovoltaic effects comes from the junction area. Possible origins of gate-tunability are discussed.

• 한국진공학회지
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• 제21권3호
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• pp.142-150
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• 2012

CIGS 박막 태양전지 기판소재인 소다라임유리 표면에 플라즈마 전처리 후 DC 마그네트론 스퍼터링 방법으로 Mo 박막을 제조하였다. 증착압력과 증착시간 변화에 따른 Mo 박막의 물리적, 전기적 특성을 분석하였고, 셀렌화 처리 조건에 따른 $MoSe_2$ 생성 여부와 경향성을 연구하였으며, Mo 박막 두께에 따른 AZO/i-ZnO/CdS/CIGS/Mo/SLG 구조의 태양전지를 제조하여 그 특성을 분석 및 평가하였다. 증착압력이 4.9 mTorr에서 1.3 mTorr로 감소할수록 치밀하고 결정입자 사이의 공극이 적고, 증착속도가 감소하고 전기저항도가 낮은 Mo 박막이 증착되었다. 증착온도가 상온에서 $200^{\circ}C$로 증가할수록 Mo 박막은 치밀한 구조를 가지고 결정성은 향상되어 면저항이 낮게 나타났다. 셀렌화 시간이 길어질수록 Mo 박막 층은 줄어들고, $MoSe_2$ 층 생성두께가 커지는 것을 알 수 있었고, 열처리로 인해 결정화 되면서 전체 박막의 두께가 줄어들었으며, $MoSe_2$ 층의 배양성은 c축이 Mo 표면과 수직 방향으로 성장된 것을 알 수 있었다. Mo 박막의 두께가 1.2 ${\mu}m$와 0.6 ${\mu}m$인 AZO/i-ZnO/CdS/CIGS/Mo/SLG 구조로 이루어진 CIGS 박막 태양전지를 제조하였다. Mo 박막의 두께가 1.2 ${\mu}m$일 때 보다 0.6 ${\mu}m$일 때 CIGS 박막 태양전지의 변환 효율은 9.46%로 비교적 우수한 특성을 나타났다. CIGS 박막 태양전지에서 하부전극인 Mo 박막 특성은 유리기판 및 광흡수 층과의 계면 형성 따라 큰 영향을 미친다는 것을 알 수 있었고, 유리기판의 플라즈마 처리와 Mo 박막의 두께조절로 Na 효과 및 $MoSe_2$층 형성 제어함으로써 CIGS 박막 태양전지의 특성 개선에 효과를 가질 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.336-336
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• 2016

We have investigated magneto-transport properties in a MoS2 lateral spin-valve structures for different ferromagnetic CoFe electrode shapes and MoS2 channel lengths. For these devices, high quality and large-scale MoS2 thin films were synthesized through sulfurization of epitaxial MoO3 films and these sulfurized-MoO3 thin films properties are in good agreements with measurements on exfoliated MoS2 film. Magneto-transport measurements show a clear rectangular magnetoresistance signal of 0.16% and a spin polarization of 0.00012%. By using the one-dimensional spin diffusion equation, we extracted the spin diffusion length and coefficient, finding them to be 12 nm and $1.44{\times}10-3cm2/s$, respectively. These small values of magnetoresistance and spin polarization could be enhanced by appeasement of conductivity mismatch between the ferromagnet and semiconductor interface.

• 공업화학
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• 제30권2호
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• pp.133-140
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• 2019

Two-dimensional (2D) ultrathin molybdenum dichalcogenides $MoS_2$ has gained a great deal of attention in energy conversion and storage applications because of its unique morphology and property. The 2D $MoS_2$ nanosheets provide a high specific surface area, 2D charge channel, sub-nanometer thickness, and high conductivity, which lead to high electrochemical performances for energy storage devices. In this paper, an overview of properties and synthetic methods of $MoS_2$ nanosheets for applications of supercapacitors and rechargeable batteries is introduced. Different phases triangle prismatic 2H and metallic octahedral 1T structured $MoS_2$ were characterized using various analytical techniques. Preparation methods were focused on top-down and bottom-up approaches, including mechanical exfoliation, chemical intercalation and exfoliation, liquid phase exfoliation by the direct sonication, electrochemical intercalation exfoliation, microwave-assisted exfoliation, mechanical ball-milling, and hydrothermal synthesis. In addition, recent applications of supercapacitors and rechargeable batteries using $MoS_2$ electrode materials are discussed.

• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.23-26
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• 2017

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.

• 한국전기전자재료학회논문지
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• 제36권6호
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• pp.588-593
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• 2023

The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (I_on/I_off) showed 0.15 cm²/V·s, -5.6 V, and 7.5×10⁴, respectively.