• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2002.11a
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• pp.8-8
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• 2002

TiC core/(Ti,Mo)C rim structure in TiC-$Mo_2C$-Ni base cermet which is generally prepared by sintering below 145$0^{\circ}C$ had been believed to be generated by the solid diffusion of Mo atoms 1 into TiC grains (D. Moskowitz and M.Humenik, 1r.:1966). Afterward, it was clarified that the c core/rim structure is generated by solution/re-precipitation mechanism : (1) $Mo_2C$ grains and s small TiC grains dissolve into the Ni liquid, (2) the dissolved Mo, Ti and C atoms migrate to the s surface of TiC coarse grains, (3) the Mo, Ti and C precipitate on the surface of TiC coarse g grains and form (Ti,Mo)C solid solution rim, and (4) the Ostwald ripening (grain growth by s solution/re-precipitation mechanism) of TiC-core/(Ti,Mo)-rim grains continues, and thus the w width of (Ti,Mo)C rim (at the same time, the grain size) increases with sintering time, etc. ( (H.Suzuki, K.Hayashi and O.Terada: 1973). The TiC-core was found not to disappear even by s sintering at 190$0^{\circ}C$ (ibid.: 1974) Recently, FeSi core/$Fe_2Si_5$-rim structure in Fe-66.7at%Si thermoelectric aIloy was found to also h hardly shrink and disappear by long heating at an appropriate temperature (1999: M.Tajima and K K.hayashD. Then, the authors considered its cause, and clarified experimentaIly that the disappearance of FeSi-core/$Fe_2Ski_5$-rim structure could be attributed to the exhaustion of diffusion-contributable vacancies in core/rim structure (N.Taniguchi and K.Hayashi:2001). At p present, the authors and my coworker are investigating whether the non-disappearance of TiC c core can be explained also from the new hypothesis "Exhaustion of diffusion-contributable v vacancies in corelrim structure".ure".uot;.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.1
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• pp.23-26
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• 2017

Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.95-98
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• 2007

In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.

• Journal of the Korean institute of surface engineering
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• v.16 no.3
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• pp.108-123
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• 1983

순수 Mo와 Mo-Nb, Mo-Ta($\leq$10 at% Nb. Ta)합금을 1,500-2,06$0^{\circ}C$ 범위에서 탄소의 고용도를 연구하였다. 특수한 침탄방법으로 C2H2를 시편에 침탄한후 열처리하여 부분적으로 석출하거나 완전석출에 관계없는 화학적 분석방법으로 행하였다. 순수 Mo에서 최대탄소 고용도는 logCCmax = 7.02-9,490/T이다. Nb, Ta를 미량첨가하여 탄소의 최대 고용도는 Arrhenius 식을 적용할 수 없다. Nb-, Ta- 농도와 온도에 따라 Mo2C와 Nb-,Ta-를 함유한 여러 가지 탄화물상을 만들거나 $\alpha$고용체와 Mo가 포함된 NbC, TaC와 평형상태를 나타나기 때문이다. 실험온도 범위에서 Nb, Ta를 첨가량을 증가하면 탄화물 내부에 NbC, TaC로 석출된다. 고온에 용해된 a-고용체는 150-200 oK/Min으로 냉각하면 석출물은 결정입계나 결정내부에 나타난다. 순수 Mo에 Nb, Ta를 첨가하여도 경도, 파괴실험에서와 같이 인장강도는 크게 증가하지 않는다.

• Journal of the Korean Chemical Society
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• v.30 no.5
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• pp.441-448
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• 1986

Dioxobis(sub.-salicylaldiminato) molybdenum (VI) complexes, $MoO_2\;(X-sal-N-R)_2,\;(X=H,\;5-CH_3,\;R=C_6H_5,\;p-F-C_6H_4,\;m-Cl-C_6H_4,p-I-C_6H_4\;and\;p-C_2H_5-C_6H_4)$, have been prepared by reactions of dioxobis(sub.-salicylaldehydato) molybdenum (VI), $MoO_2(X-sal)_2$ with primary amines, in which $MoO_2(X-sal)_2$ complexes were obtained by acidification of a mixture solution of ammonium paramolybdate in water and appropriate salicylaldehyde in methanol. All these complexes show two strong Mo=O stretching imodes in the 900-940$cm^{-1}$ and p.m.r. spectra exhibited only one signal for the azomethine group. These results confirmed that the complexes are six-coordinated octahedron with a $cis-MoO_2$ group and the geometrical configurations of the complexes possess a C2 axis of symmetry. From the mass analyses of the complexes, it found that the composition ratios of $MoO_2$ : ligand are 1 : 2. The charge transfer transition corresponding to N-Mo, and O-Mo occured at 29,000$cm^{-1}$ and 32,000$cm^{-1}$ respectively. Where, the complexes were found to be non-ionic materials by conductivity measurements in dimethylformamide.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.4
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• pp.23-28
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• 2004

In this paper, the properties of Mo as PMOS gate electrodes were studied. The work-function of Mo extracted from C-V characteristic curves was appropriate for PMOS. To identify the electrical and chemical stability of Mo metal gate, the changes of work-function and EOT(Effective Oxide Thickness) values were investigated after 600, 700, 800 and 90$0^{\circ}C$ RTA(Rapid Thermal Annealing). Also it was found that Mo metal gate was stable up to 90$0^{\circ}C$ with underlying SiO$_2$through X-ray diffraction measurement. Sheet resistances of Mo metal gate obtained from 4-point probe were less than 10$\Omega$/$\square$ that was much lower than those of polysilicon.

• Proceedings of the KWS Conference
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• 1999.10a
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• pp.177-177
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• 1999

• Applied Chemistry for Engineering
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• v.9 no.1
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• pp.101-106
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• 1998

Two types of CoMo/zeolite as well as $NiMo/{\gamma}-Al_2O_3$ were prepared and their activities and selectivities of low-temperature dibenzothiophene(DBT) hydrodesulfurization(HDS) were studied in high pressure fixed bed reactor. The HDS activities of CoMo/zeolites were higher than that of $NiMo/{\gamma}-Al_2O_3$ at temperatures below $225^{\circ}C$ while they were lower than that of $NiMo/{\gamma}-Al_2O_3$ at temperatures higher than $275^{\circ}C$. The main products from $NiMo/{\gamma}-Al_2O_3$ were biphenyl and cyclohexylbenzene. The product distribution of CoMo/zeolite catalysts was different from that of $NiMo/{\gamma}-Al_2O_3$. It is speculated that DBT is converted to alkylcyclohexane over zeolite based catalysts through both alkylation and hydrogenation reactions. The crystal structure of molybdenum was $MoO_3$ in fresh zeolite support while mixtures of $MoO_3$ and $MoS_2$ were observed in the aged catalyst.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.240-244
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• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.4
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• pp.172-179
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• 2006

When $Al_2O_3-MoO_3$ mixture is reduced, $MoO_3$ is only reduced to Mo at $900^{\circ}C$. But a compound between $Al_2O_3$ and Mo is not formed up to $1300^{\circ}C$. In the case of $Al_2O_3-MoO_3-MnO_2$ mixture, an intermediate compound $Mn_2Mo_3O_8$ is firstly formed at $900^{\circ}C$ and changes to $MnAl_2O_4$ at $1100^{\circ}C{\sim}1300^{\circ}C$. $Al_2O_3/Mo/MnO_2$ composite are manufactured by a selective reduction process in which Mo is only reduced in the powder mixture of $Al_2O_3,\;MoO_3\;and\;MnO_2$ oxide. For $Al_2O_3/Mo$ composite, the average grain size was not changed with increasing Mo content because of inhibition of grain growth of $Al_2O_3$ matrix in the presence of Mo particles. Fracture strength increased with increasing Mo content due to phenomenon of grain growth inhibition of $Al_2O_3$ matrix. Hardness decreased because of a lower hardness value of Mo, whereas fracture toughness increased. For $Al_2O_3,\;Mo\;and\;MnO_2$ composite, grain growth was facilitated by MnOB and it showed a lower fracture strength because of grain growth effect with increasing Mo and $MnO_2$ content. Hardness decreased because of the grain growth of matrix and coalesced Mo particles to be located in grain boundary, whereas fracture toughness increased.