• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.7
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• pp.525-529
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• 1999

The influence of ambient gases on field emission performance of Mo-field emitter array(FEA) in the frit-sealing step of field emission display(FED) packaging process was investigated. Mo-tip FEA was mounted on the glass substrate having a surrounded frit(Ferro FX11-137) and fired at $415^{\circ}C$ in the ambient gases of air, $N_2$ and Ar. The Ar gas was proved to be most proper ambient among the used gases through evaluating the turn-on voltage and field emission current of the fired Mo-tip FEA devices. It was confirmed that the Mo surface fired in Ar ambient was less oxidized when compared with another ones annealed in air and Ar ambient by the AFM, XPS, AES and SIMS analysis. Finally, the 3.5 inch-sized Mo-tip FED, which was packaged using frit-sealing process in the Ar ambient, was proposed.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.76-79
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• 1999

Low-hydrogenated DLC films were coated on the Mo-tip FEAs by 'layer-by-layer' process based on the plasma-enhanced CVD method. The hydrogen content in the DLC film deposited by the 'layer-by-layer' process was appeared to be remarkably lowered through SIMS analysis. Also, the low-hydrogenated DLC-coated Mo-tip FEA showed good potentiality for FED applications in terms of turn-on voltage, emission current, emission stability and light emitting uniformity.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.8
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• pp.409-413
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• 2001

In the electron-gun of CRT, the Mo-tip FEA was employed as cold cathode in order to replace the conventional thermal cathode. The Mo-tip FEA was designed and fabricated according to CRT specification and mounted on the electron-gun. It was known that fabricated cold cathode electron-gun showed better performance in terms of maximum emission current and switch-on time when compared with the ones of thermal cathode electron-gun, but some geometrical structures in the inside of electron-gun must be changed to reduce the gate leakage current. Finally, the potential applicability was guaranteed by means of operating the 19 inch-sized LG-color CRT using the fabricated cold cathode electron-gun.

• Korean Journal of Materials Research
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• v.10 no.2
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• pp.124-127
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• 2000

A new triode type Ti-silicided Si FEA(field emitter array) was realized by Ti-silicidation of Ti coated Si FEA and its field emission properties were investigated. In the fabricated device, the field emission properties through the unit pixel with $200{\mu\textrm{m}}{\times}200{$\mu\textrm{m}}$ tip array in the area of $1000{\mu\textrm{m}}{\times}1000{$\mu\textrm{m}}$ were as follows : the turn-on voltage was about 70V under high vacuum condition of $10^8Torr$, and the field emission current and steady state current degradation were about 2nA/tip and 0.3%/min under the bias of $V_A=500V\;and\;V_G=150V$. The low turn-on voltage and the high current stability during long term operation of the Ti silicided Si FEA were due to the thermal and chemical stability and the low work function of silicide layer formed at the surface of Si tip.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.532-535
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• 2001

The sputtering condition of Cr thin film was established in order to get Cr gate electrode having a vertical wall structure for Mo-tip FEA. In case of Mo-tip FEA which had a vertically-etched Cr gate electrode, the field enhancement factor, was relatively increased and so the field emission performance in terms of turn-on voltage, emission current and trans-conductance could be improved when compared with the devices having a tapered gate wall.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.508-516
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• 1998

Mo-tip field emitter arrays(FEAs) were fabricated by conventional Spindt process and their life time characteristics and failure mode were evaluated. The fabricated Mo-tip FEA could generate at least $0.35\{mu} A/tip$ emission current for about 320 persistently under a constant gate bias of 140 V and was finally destroyed through self-healing mode. Thin diamond-like carbon films were coated on the M-tip by plasma-enhanced CVD and the dependence of emission properties upon the DLC thickness was investigated. By DLC coating, the turn-on voltage and emission current were appeared to be improved whereas the current fluctuation was increased in the DLC thickness range of $0~1,000\{AA}$.

• Korean Journal of Materials Research
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• v.8 no.1
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• pp.10-12
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• 1998

Si FEA 로부터 tip의 표면을 Ti금속으로 silicidation한 새로운 2극형 Ti-실리사이드 FEA를 제작하고 이의 전계방출 특성을 Si FEA의 경우와 비교하였다. 양극과 음극간의 거리를 10$\mu\textrm{m}$로 유지하고 $10^{-8}$Torr의 고진공 상태에서 측정한 실리사이드 FEA의 turn-on전압은 약 40V로, 전계방출전류와 정상상태 전류 변동율은 150V의 바이어스 아래에서 약 3x$10^{-2}$ $\mu$A/tip와 0.1%min로 나타났다. Ti-실리사이드 FEA는 Si FEA에 비해 낮은 turn-on 전압, 높은 전계방출전류 및 고내구특성을 나타내었다.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.656-661
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• 1999

As a fundamental study for FED tubeless packaging, sodalime-sodalime electrostatic bonding was performed by using on the developed bonding mechanism. Thebonding properties of the bonded sodalime-sodalime structure were investigated through SEM and SIMS analyses. Mo-tip FEA was vacuum-packaged by the developed bonding process and the packaged device generated the field emission current.

• ETRI Journal
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• v.24 no.4
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• pp.290-298
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• 2002

We present, for the first time, a prototype active-matrix field emission display (AMFED) in which an amorphous silicon thin-film transistor (a-Si TFT) and a molybdenum-tip field emitter array (Mo-tip FEA) were monolithically integrated on a glass substrate for a novel active-matrix cathode (AMC) plate. The fabricated AMFED showed good display images with a low-voltage scan and data signals irrespective of a high voltage for field emissions. We introduced a light shield layer of metal into our AMC to reduce the photo leakage and back channel currents of the a-Si TFT. We designed the light shield to act as a focusing grid to focus emitted electron beams from the AMC onto the corresponding anode pixel. The thin film depositions in the a-Si TFTs were performed at a high temperature of above 360°C to guarantee the vacuum packaging of the AMC and anode plates. We also developed a novel wet etching process for $n^+-doped$ a-Si etching with high etch selectivity to intrinsic a-Si and used it in the fabrication of an inverted stagger TFT with a very thin active layer. The developed a-Si TFTs performed well enough to be used as control devices for AMCs. The gate bias of the a-Si TFTs well controlled the field emission currents of the AMC plates. The AMFED with these AMC plates showed low-voltage matrix addressing, good stability and reliability of field emission, and good light emissions from the anode plate with phosphors.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1450-1452
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• 1996

In order to optimize the characteristics of gate insulator for FED(field emission device), we investigated the effect of wet-etching process on the gate insulator for fabrication of FED. We used the general three types of etchants for fabrication of the metal tip FEA(field emitter array), they are MO and oxide etchants to form the gate hole, and Al etchant to remove the release layer. In the result of the breakdown field of the insulator by the measure of the current-voltage characteristics, the breakdown field of insulator for immersing in oxide etchant was rapidly lowering with increasing etching time, but that for immersing in Al etchant was slow lowering. Also, in comparing cleaning with non-cleaning samples, the breakdown field of the cleaning samples was higher than that of non-cleaning samples.