• 제목/요약/키워드: Mo electrode

검색결과 236건 처리시간 0.026초

Electrode Thickness Optimization at Full Color OLED and Analysis of Power Consumption

  • Park, Sung-Joon;Kim, Ok-Tae;Kim, Hee-Je
    • KIEE International Transactions on Electrophysics and Applications
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    • 제4C권3호
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    • pp.106-110
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    • 2004
  • The operating condition of the OLED (organic light-emitting diode) is very sensitive to electrode thickness properties. The electrode thickness is a significant issue in the construction of OLEDs because of its transparency, high conductivity and high efficiency as an injector into organic materials. We carried out a systematic study to optimize the electrode thickness conditions in Indiumtin oxide (ITO), Molybdenum (Mo) and Aluminum (Al). Further, we measured electrode thickness under standard conditions [ITO 1500$\AA$, Mo 2600$\AA$, Al 1500$\AA$]. We also evaluated power consumption. In addition, we analyzed substrate uniformity with IVL measurement results. From these results, it is known that the electrode thickness should be optimized in order to accomplish optimal power efficiency.

몰리브덴 팁 전계 방출 소자에 있어서 크롬 게이트 전극 구조의 개선 (Improvement of Geometrical Structure of Cr-Gate Electrode in Mo-tip Field Emitter Array)

  • 주병권;김훈;서상원;이윤희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권10호
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    • pp.532-535
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    • 2001
  • The sputtering condition of Cr thin film was established in order to get Cr gate electrode having a vertical wall structure for Mo-tip FEA. In case of Mo-tip FEA which had a vertically-etched Cr gate electrode, the field enhancement factor, was relatively increased and so the field emission performance in terms of turn-on voltage, emission current and trans-conductance could be improved when compared with the devices having a tapered gate wall.

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Development of Alkali Metal Thermal-to-Electric Converter Unit Cells Using Mo/TiN Electrode

  • Seog, Seung-won;Choi, Hyun-Jong;Kim, Sun-Dong;Lee, Wook-Hyun;Woo, Sang-Kuk;Han, Moon-Hee
    • 한국세라믹학회지
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    • 제54권3호
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    • pp.200-204
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    • 2017
  • Molybdenum (Mo), an electrode material of alkali metal thermal-to-electric converters (AMTEC), facilitates grain growth behavior and forms Mo-Na-O compounds at high operating temperatures, resulting in reduced performance and shortened lifetime of the cell. Mo/TiN composite materials have been developed to provide a solution for such issues. Mo is a metal that possesses excellent electrical properties, and TiN is a ceramic compound with high-temperature durability and catalytic activity. In this study, a dip-coating process with an organic solvent-based slurry was used as an optimal coating method to achieve homogeneity and stability of the electrodes. Cell performance was evaluated under various conditions such as the number of coatings, ranging from 1 to 3 times, and heat treatment temperatures of $800-1100^{\circ}C$. The results confirmed that the cell yielded a maximum power of 9.99 W for the sample coated 3 times and heat-treated at $900^{\circ}C$.

Spontaneously Adsorbed Mo Layers on Pt(111) and Pt(100) Single Crystal Electrode Surfaces

  • Han, Yoon-gu;Jung, Chang-hoon;Rhee, Choong-Kyun
    • Bulletin of the Korean Chemical Society
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    • 제23권3호
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    • pp.395-399
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    • 2002
  • The voltammetric behavior of spontaneously adsorbing Mo layers on Pt(111) and Pt(100) electrodes has been studied to estimate the number of electrons involved in the electrochemical processes of spontaneously adsorbed Mo and the number of the bloc ked Pt sites for hydrogen adsorption. On Pt(111) and Pt(100) surfaces, the spontaneously adsorbed Mo layers showed redox peaks at 0.10 V and 0.15 V, respectively, and continuous current-potential waves in the conventional hydrogen region. Since the potential range of the Mo redox processes on both surfaces overlapped partially with the potential range of hydrogen adsorption, the variation in the ratio of the total charge of Mo and H ($Q_H$ +$Q_{MO}$) to the hydrogen charge of clean Pt electrode ($Q_H^0$) was analyzed. From the analysis, six electrons were estimated to be involved in the electrochemical processes of the spontaneously adsorbed Mo, and four Pt sites for hydrogen adsorption were calculated to be blocked by one adsorbed Mo atom. Based on these figures and the pH dependence of the Mo redox processes, we have proposed an electrochemical equation for the spontaneously adsorbed Mo. This electrochemical equation led us to conclude that the saturation coverage of the spontaneously adsorbed Mo is 0.25. The coverage of Mo less than 0.25, however, could not be determined voltammetrically due to the convolution of the charges of Mo and H.

Effect of MoO3 Thickness on the Electrical, Optical, and structural Properties of MoO3 Graded ITO Anodes for PEDOT:PSS-free Organic Solar Cells

  • Lee, Hye-Min;Kim, Seok-Soon;Chung, Kwun-Bum;Kim, Han-Ki
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.478.1-478.1
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    • 2014
  • We investigated $MoO_3$ graded ITO electrodes for organic solar cells (OSCs) without PEDOT:PSS buffer layer. The effect of $MoO_3$ thickness on the electrical, optical, and structural properties of $MoO_3$ graded ITO anodes prepared by RF/DC magnetron co-sputtering system using $MoO_3$ and ITO targets was investigated. At optimized conditions, we obtained $MoO_3$ graded ITO electrodes with a low sheet resistance of 13 Ohm/square, a high optical transmittance of 83% and a work function of 4.92 eV, comparable to conventional ITO films. Due to the existence of $MoO_3$ on the ITO electrodes, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer successfully operated. Although OSCs fabricated on ITO anode without buffer layer showed a low power conversion efficiency of 1.249%, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer showed a outstanding cell performance of 2.545%. OSCs fabricated on the $MoO_3$ graded ITO electrodes exhibited a fill factor of 61.275%, a short circuit current of 7.439 mA/cm2, an open circuit voltage of 0.554 V, and a power conversion efficiency of 2.545%. Therefore, $MoO_3$ graded ITO electrodes can be considered a promising transparent electrode for cost efficient and reliable OSCs because it could eliminate the use of acidic PEDOT:PSS buffer layer.

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CIGSe2 박막태양전지용 Mo 하부전극의 물리·전기적 특성 연구 (A Study of Mo Back Electrode for CIGSe2 Thin Film Solar Cell)

  • 최승훈;박중진;윤정오;홍영호;김인수
    • 한국진공학회지
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    • 제21권3호
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    • pp.142-150
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    • 2012
  • CIGS 박막 태양전지 기판소재인 소다라임유리 표면에 플라즈마 전처리 후 DC 마그네트론 스퍼터링 방법으로 Mo 박막을 제조하였다. 증착압력과 증착시간 변화에 따른 Mo 박막의 물리적, 전기적 특성을 분석하였고, 셀렌화 처리 조건에 따른 $MoSe_2$ 생성 여부와 경향성을 연구하였으며, Mo 박막 두께에 따른 AZO/i-ZnO/CdS/CIGS/Mo/SLG 구조의 태양전지를 제조하여 그 특성을 분석 및 평가하였다. 증착압력이 4.9 mTorr에서 1.3 mTorr로 감소할수록 치밀하고 결정입자 사이의 공극이 적고, 증착속도가 감소하고 전기저항도가 낮은 Mo 박막이 증착되었다. 증착온도가 상온에서 $200^{\circ}C$로 증가할수록 Mo 박막은 치밀한 구조를 가지고 결정성은 향상되어 면저항이 낮게 나타났다. 셀렌화 시간이 길어질수록 Mo 박막 층은 줄어들고, $MoSe_2$ 층 생성두께가 커지는 것을 알 수 있었고, 열처리로 인해 결정화 되면서 전체 박막의 두께가 줄어들었으며, $MoSe_2$ 층의 배양성은 c축이 Mo 표면과 수직 방향으로 성장된 것을 알 수 있었다. Mo 박막의 두께가 1.2 ${\mu}m$와 0.6 ${\mu}m$인 AZO/i-ZnO/CdS/CIGS/Mo/SLG 구조로 이루어진 CIGS 박막 태양전지를 제조하였다. Mo 박막의 두께가 1.2 ${\mu}m$일 때 보다 0.6 ${\mu}m$일 때 CIGS 박막 태양전지의 변환 효율은 9.46%로 비교적 우수한 특성을 나타났다. CIGS 박막 태양전지에서 하부전극인 Mo 박막 특성은 유리기판 및 광흡수 층과의 계면 형성 따라 큰 영향을 미친다는 것을 알 수 있었고, 유리기판의 플라즈마 처리와 Mo 박막의 두께조절로 Na 효과 및 $MoSe_2$층 형성 제어함으로써 CIGS 박막 태양전지의 특성 개선에 효과를 가질 수 있었다.

TEGDME 액체 전해질을 사용한 $Li/MoS_2$ 전지의 충.방전 특성 (The Charge-Discharge Performance of $Li/MoS_2$ Battery with liquid Electrolyte of Tetra(ethylene glycol] Dimethyl Ether[TEGDME])

  • 권정희;류호석;김기원;안주현;정용수;이건환;안효준
    • 한국수소및신에너지학회논문집
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    • 제20권3호
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    • pp.238-244
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    • 2009
  • We investigated the electrochemical properties of lithium/molybdenum sulfide(Li/MoS$_2$) using tetra (ethylene glycol) dimethyl ether(TEGDME) electrolyte. The Li/TEGDME/MoS$_2$ cell showed the first discharge capacity of 288mAhg$^{-1}$. From the XRD, SEM results of the MOS$_2$ electrode in various cut-off voltage during charge-discharge process, MoS$_2$ partly changed into Li$_2$S and Mo during discharge and Li$_2$S partly recovered into MOS$_2$ and Li during charge. Full charged MOS$_2$ electrode showed lump shape of big size, which might be related to agglomerate of MoS$_2$ particles. Therefore, the degradation might be related to decrease of active material for electrochemical reaction by agglomeration of MOS$_2$.

유기박막트랜지스터 응용을 위한 탄소가 도핑된 몰리브덴 박막의 특성 (Characteristics of Carbon-Doped Mo Thin Films for the Application in Organic Thin Film Transistor)

  • 김동현;박용섭
    • 한국전기전자재료학회논문지
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    • 제36권6호
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    • pp.588-593
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    • 2023
  • The advantage of OTFT technology is that large-area circuits can be manufactured on flexible substrates using a low-cost solution process such as inkjet printing. Compared to silicon-based inorganic semiconductor processes, the process temperature is lower and the process time is shorter, so it can be widely applied to fields that do not require high electron mobility. Materials that have utility as electrode materials include carbon that can be solution-processed, transparent carbon thin films, and metallic nanoparticles, etc. are being studied. Recently, a technology has been developed to facilitate charge injection by coating the surface of the Al electrode with solution-processable titanium oxide (TiOx), which can greatly improve the performance of OTFT. In order to commercialize OTFT technology, an appropriate method is to use a complementary circuit with excellent reliability and stability. For this, insulators and channel semiconductors using organic materials must have stability in the air. In this study, carbon-doped Mo (MoC) thin films were fabricated with different graphite target power densities via unbalanced magnetron sputtering (UBM). The influence of graphite target power density on the structural, surface area, physical, and electrical properties of MoC films was investigated. MoC thin films deposited by the unbalanced magnetron sputtering method exhibited a smooth and uniform surface. However, as the graphite target power density increased, the rms surface roughness of the MoC film increased, and the hardness and elastic modulus of the MoC thin film increased. Additionally, as the graphite target power density increased, the resistivity value of the MoC film increased. In the performance of an organic thin film transistor using a MoC gate electrode, the carrier mobility, threshold voltage, and drain current on/off ratio (Ion/Ioff) showed 0.15 cm2/V·s, -5.6 V, and 7.5×104, respectively.

스퍼터링 Mo 도핑 탄소박막의 특성과 유기박막트랜지스터의 게이트 전극으로 응용 (Characteristics of Sputtering Mo Doped Carbon Films and the Application as the Gate Electrode in Organic Thin Film Transistor)

  • 김영곤;박용섭
    • 한국전기전자재료학회논문지
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    • 제30권1호
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    • pp.23-26
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    • 2017
  • Mo doped carbon (C:Mo) thin films were fabricated with various Mo target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the surface, structural, and electrical properties of C:Mo films were investigated. UBM sputtered C:Mo thin films exhibited smooth and uniform surfaces. However, the rms surface roughness of C:Mo films were increased with the increase of target power density. Also, the resistivity value of C:Mo film as electrical properties was decreased with the increase of target power density. From the performance of organic thin filml transistor using conductive C:Mo gate electrode, the carrier mobility, threshold voltage, and on/off ratio of drain current (Ion/Ioff) showed $0.16cm^2/V{\cdot}s$, -6.0 V, and $7.7{\times}10^4$, respectively.

마멸 전극 기법과 교류 임피던스법으로 연구한 스테인리스강의 합금원소(Cr, Mo, N)가 재부동태 특성에 미치는 영향 (Effects of Alloying Elements(Cr, Mo, N) on Repassivation Characteristics of Stainless Steels Studied by the Abrading Electrode Technique and A.C Impedance Spectroscopy)

  • 함동호;김석원;이재봉
    • 전기화학회지
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    • 제3권4호
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    • pp.211-218
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    • 2000
  • 마멸전극기법과 교류 임피던스법으로 스테인리스강의 합금원소, Cr, Mo, N가 합금의 재부동태 특성에 미치는 영향을 조사하였다. Fe-Cr, Fe-Cr-Mo, 304, 304LN, 316, 316LN등의 스테인리스강을 시편으로 사용하였으며 각 합금의 부동태 피막의 전기화학적 특성은 in-situ시험 기법인 d.c와 a.c전기화학적 기법을 각각 이용하였다 스테인리스강이 국부부식에 대하여 강한 저항성을 가지려면 부식 환경에서도 치밀한 부동태 피막을 유지해야 하고 피막의 파괴가 발생하더라도 재부동태 속도가 빨라야 하기 때문에 합금원소가 시간에 따른 재부동태 전류밀도와 재부동태 속도에 미치는 영향을 마멸 전극 시험법과 교류 임피던스 시험법으로 알아보았다. 부동태 피막의 안정성, 재부동태 속도 그리고 합금원소 사이의 관계를 규명하기 위하여 실험결과를 분석하였다.