• 대한전자공학회논문지
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• 제21권6호
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• pp.34-41
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• 1984

RMOS(refractors metal oxide semiconductor)의 게이트 금속으로 사용되는 Mo2N/Mo 이중층을 N2와 Ar을 혼합하여 저온의 반응성 스펏터링법으로 제조하였다. Ar : N2=95 : 5로 혼합된 가스 분위기에서 반응성 스펏터링을 할 때 Mo2N이 잘 형성되었다. 이렇게 제조한 Mo2N 박막은 면저항이 약 1.20∼1.28Ω/□로서 다결정 실리콘의 1/10정도가 되어 반도체 소자의 동작속도를 크게 향상시킬 것으로 기대된다. 1100℃의 N2분위기에서 PSC(phosphorus silicate glass)를 불순물 확산원으로 하여 소오스와 드레인의 불순물 확산을 할때 Mo2N 박막이 Mo으로 환원되어 확산전의 면저항보다 훨씬 작은 약 0.38Ω/□정도의 면저항을 나타내었다. 본 실험에서 제작한 자기정렬된 RMOSFET의 문턱전압은 약 -1.5V이고 결핍과 증가의 두 가지 동작특성을 나타내었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.375-375
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• 2014

Layered semiconductor materials can be a promising candidate for large-area thin film transistors (TFTs) due to their relatively high mobility, low-power switching, mechanically flexibility, optically transparency, and amenability to a low-cost, large-area growth technique like thermal chemical vapor deposition (CVD). Unlike 2D graphene, series of transition metal dichalcogenides (TMDCs), $MX_2$ (M=Ta, Mo, W, X=S, Se, Te), have a finite bandgap (1~2 eV), which makes them highly attractive for electronics switching devices. Recently, 2D $MoS_2$ materials can be expected as next generation high-mobility thin-film transistors for OLED and LCD backplane. In this paper, we investigate in detail the electrical characteristics of 2D layered $MoS_2$ local bottom-gated transistor with the same device structure of the conventional thin film transistor, and expect the feasibility of display application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.460-463
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• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in $O_2$ atmosphere by RF reactive sputtering using Molybdenum metal target. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}mtorr$ and all deposited films were annealed at $500^{\circ}C$ for 5hours. To investigate gas sensing characteristics of the addition doped $MoO_3$ thin film, Co, Ni and Pt were used as adding dopants. The sensing properties were investigated in tenn of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO at optimum working temperature. Co-doped $MoO_3$ thin film shows the maximum 46.8% of sensitivity in $NH_3$ and Ni-doped $MoO_3$ thin film exhibits 49.7% of sensitivity in $H_2$.

• 한국재료학회지
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• 제30권2호
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• pp.81-86
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• 2020

MoO₃ metal oxide nanostructure was formed by hydrothermal synthesis, and a perovskite solar cell with an MoO₃ hole transfer layer was fabricated and evaluated. The characteristics of the MoO₃ thin film were analyzed according to the change of hydrothermal synthesis temperature in the range of 100 ℃ to 200 ℃ and mass ratio of AMT : nitric acid of 1 : 3 ~ 15 wt%. The influence on the photoelectric conversion efficiency of the solar cell was evaluated. Nanorod-shaped MoO₃ thin films were formed in the temperature range of 150 ℃ to 200 ℃, and the chemical bonding and crystal structure of the thin films were analyzed. As the amount of nitric acid added increased, the thickness of the thin film decreased. As the thickness of the hole transfer layer decreased, the photoelectric conversion efficiency of the perovskite solar cell improved. The maximum photoelectric conversion efficiency of the perovskite solar cell having an MoO₃ thin film was 4.69 % when the conditions of hydrothermal synthesis were 150 ℃ and mass ratio of AMT : nitric acid of 1 : 12 wt%.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.705-710
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• 2003

MoO$_3$thin films were deposited on electrode of alumina substrates in $O_2$atmosphere by RF reactive sputtering using molybdenum metal target. The deposition was performed at 30$0^{\circ}C$ with 350 W of a forward power in an Ar-O$_2$atmosphere. The working pressure was maintained at 3$\times$10$^{-2}$ torr and all deposited films were annealed at 50$0^{\circ}C$ for 5 hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by using a XRD. To investigate gas sensing characteristics of the doped MoO$_3$thin film, Co, Ni and Pt were used as dopants. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as H$_2$, NH$_3$and CO at optimum working temperature. Co-doped MoO3 thin film shows the maximum 46.8 % of sensitivity in NH$_3$ and Ni-doped MoO$_3$thin film exhibits 49.7 % of sensitivity in H$_2$.

• Tribology and Lubricants
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• 제16권3호
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• pp.223-230
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• 2000

Molybdenum dialkyl dithiophosphate(MoDTP) 마찰특성을 이원통 마찰시험기에 의한 마찰실험 및 X-선광전자분광분석기를 이용하여 마찰표면을 분석함으로써 MoDTP의 마찰감소 작용에 대해 고찰하였다 MoDTP의 마찰감소작용은 마찰표면에 생성하는 MoS$_2$에 의존하였다. 몰리브덴(Mo)이 용이하게 금속내부로 확산하는 질소분위기 중에서는 MoDTP의 마찰감소 특성은 나타나지 않았으며, 금속표면에 산화피막이 존재할 때 MoDTP의 마찰감소작용이 잘 나타남을 알 수 있었다

• 전자공학회논문지A
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• 제28A권1호
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• pp.85-90
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• 1991

MoSi$_2$ was formed by RTA (Rapid Thermal Annealing at 600-1200$^{\circ}C$) under Ar ambient from the Mo-Si mixture film which was deposited on single and poly-Si substrates. The MoSi$_2$ film was investigated by SEM, X-ray diffractometer, four-points probe and AES profile. It was found that the resistivity, the surface roughness, and the formation temperature of MoSi$_2$ were independent on the type of Si substrates. The formation of MoSi$_2$ started from 800$^{\circ}C$ and the phse transformation was completed at 1000$^{\circ}C$. The stable MoSi$_2$ with the resistivity of 74${\mu}{\Omega}$-cm was formed at 1200$^{\circ}C$.

• 한국정보통신학회:학술대회논문집
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• 한국정보통신학회 2013년도 춘계학술대회
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• pp.786-788
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• 2013

몰리브덴(Molybdenum) 박막은 높은 전기전도성을 가진 금속으로 CIGS계 태양전지의 후면전극으로 많이 사용되고 있다. 스퍼터링법을 통해 증착되는 몰리브덴 박막의 경우, 전기 전도성 및 기판과의 밀착성은 스퍼터 전력 및 압력과 같은 공정 조건에 따라 변화된다. 본 연구에서는 DC 마그네트론 스퍼터링법을 이용하여 몰리브덴 박막을 Ar 가스 분위기에서 압력별로 증착하였다. SEM(scanning electron microscope), XRD(X-ray Diffraction), 4-point probe, 광반사율, Hall measurement를 이용하여 박막의 전기적, 구조적 특성을 분석하였다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1992년도 춘계연구발표회 논문개요집
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• pp.84-85
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• 1992

• 한국자기학회지
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• 제3권3호
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• pp.221-228
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• 1993

고밀도기록용 박막재료로서의 충족조건은 높은 보자력, 높은 포화자화, 생산성, 그리고 화학적 안정성으로써 수직자기기록매체 CoCrMo 자성박막을 RF 스퍼터링 방법으로 제조한 후, 부식 특성을 전기화학적 측정, acceleration corrosion test 및 부식후 박막의 표면분석을 통하여 조사 하였다. CoCrMo 박막의 부식특성은 스퍼터링 조건에 따라서 다르게 나타났으며, Mo의 함량이 증가 할수록 내식성은 향상되었다. 전기화학부식실험 결과 박막의 Mo 함량이 증가할수록 뚜렷한 활성- 불활성 전이를 나타내었으며 부동태전류밀도의 감소를 나타내었다. Accelerated corrosion test에 서 CoCrMo 박막의 부식은 전기화학반응에 의하여 일어났으며 Mo첨가에 따라 부식이 일어난 곳의 수는 감소하였다. AES분석결과 부식 장소에는 많은 양의 $Cl_{-}$ 이온이 존재하였고, Cr의 고갈이 부식의 원인이었다.