• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.404-405
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• 2007

Tin-doped indium thin film is outstanding material among transparent Conductive Oxide (TCO) materials. ITO thin films show a low electrical resistance(<$10^{-4}\;[{\Omega}{\cdot}m]$) and high transmittance(>80%) in the visible range. ITO thin films usually have been deposited on the glass substrate. In order to apply flexible display, the substrate should have the ability to bend and be deposited without substrate heat. Also properties of ITO thin film depend on what kind of substrate. In this study, we prepared ITO thin film on the polycarbonate (PC) substrate by using Facing Target Sputtering (FTS) system. Before deposition of ITO thin film, PC substrate took plasma surface treatment. The electrical and surface properties of as-deposited thin films were investigated by Hall Effect measurement, UV/VIS spectrometer and the surface property of substrate is investigated by Contact angle measurement.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.8
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• pp.1455-1460
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• 2007

This paper reports the piezoelectric microspeakers that are audible in open air with high quality piezoelectric AlN thin film deposited onto Mo/Ti electrode. This successful achievement, compared to the previous results, is followed by manipulating two material properties: the one is to use a compressively stressed silicon nitride film as a supporting diaphragm (even tensile stressed, around +20 MPa) and the another is to use high quality AlN thin film with compressive residual stress (less than -100 MPa). With these materials, the Sound Pressure Level (SPL) of the fabricated micro speakers shows more than 60 dB from 100 Hz to 15 kHz and the highest SPL is about 100 dB at 9.3 kHz with 20 Vpeak-to-peak sinusoidal input and with 10 mm distances from the fabricated micro speakers to the reference microphone (B&K Type 2669 & 4192L).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.211.1-211.1
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• 2013

We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.277.1-277.1
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• 2016

We report on synthesis of large-area MoS2 using chemical vapor deposition (CVD). Relatively uniform MoS2 are obtained. To fabricate field-effect transistor (FET) devices, MoS2 films are transferred to another SiO2/Si substrate using polystyrene (PS) and patterned using oxygen plasma. In addition, to reduce contact resistance, synthesis of graphene used as channel. Device characteristics are presented and compared with the reported results.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.10
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• pp.532-535
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• 2001

The sputtering condition of Cr thin film was established in order to get Cr gate electrode having a vertical wall structure for Mo-tip FEA. In case of Mo-tip FEA which had a vertically-etched Cr gate electrode, the field enhancement factor, was relatively increased and so the field emission performance in terms of turn-on voltage, emission current and trans-conductance could be improved when compared with the devices having a tapered gate wall.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.826-829
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• 2002

$MoO_3$ thin films were deposited on electrode and heater screen-printed alumina substrates in en atmosphere by RF reactive sputtering. The deposition was performed at $300^{\circ}C$ with 350W of a forward power in an $Ar-O_2$ atmosphere. The working pressure was maintained at $3{\times}10^{-2}$mtorr and all deposited films were annealed at $500^{\circ}C$ for 5hours. The surface morphology of films was observed by using a SEM and crystalline phases were analyzed by XRD. The sensing properties were investigated in term of gas concentration under exposure of reducing gases such as $H_2$, $NH_3$ and CO.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.101-104
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• 2008

Too high stress of the bottom Mo layer of the gate line is thought to be the main reason for H-line mura. H-Line mura is eliminated effectively by changing the gate line metal structure from Mo/AlNd/Mo to AlNd/Mo. The new structure does not influence the panel's electrical characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.192-192
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• 2012

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, electronic devices using two dimensional (2D) atomic crystals like graphene, hexagonal boron nitride (h-BN), molybdenum disulfate ($MoS_2$) and organic thin film have been studied intensely. In this talk, I will demonstrate the $MoS_2$ field effect transistor (FET) toward performance enhancement by insulating h-BN substrate.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1996.04b
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• pp.35-40
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• 1996

Friction and wear behavior of MoS$_{2}$ bonded films were evaluated at a Block-on-Ring typed tribo-tester, and their properties were compared with those of Falex tester in terms of the wear life of the films. Test results showed that friction and wear properties were significantly affected by the test methods of different contact configuration, and the wear life at a Block-on-Ring type tribo-tester was mostly governed by the resin binder. To obtain long wear life of the films, various combinations of solid-resin-content ratio and chemical resin modification were attempted and evaluated. Adhesion properties of resin binders were also measured and compared by using a scratch tester.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.24-29
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• 1995

The magnetic amd magneto-optical(MO)properties of Co-based multilayered(ML)films are known to vary sensitively according to the manufacturing methods and the film microstructures. Co/Pd and Co/Pt ML films with ultrathin layers of Co were prepared by alternating deposition in an ultrahigh-vacuum physical-vapor-deposition system. The individual layer thicknesses of the samples were estimated making use of the angular positions of x-ray diffraction peaks. The magnetic and MO properties were investigated, and correlated systematically to the structural parameters of the films. A Kerr spectrometer was self-manufactured to measure the MO properties such as Kerr rotation angle, ellipticity and reflectivity. The rms surface roughness was also measured using atomic force microscopy. Some of the samples showed good properties for MO medium, such as large perpendicular magnetic anisotropy and Kerr rotation, and perfect squareness of the magnetic hysteresis loop.