• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.82-82
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• 2008

One-dimensional (1D) nanowires have been received much attention due to their potential for applications in various field. Recently some logic applications fabricated on various nanowires, such as ZnO, CdS, Si, are reported. These logic circuits, which consist of two- or three field effect transistors(FETs), are basic components of computation machine such as central process unit (CPU). FETs fabricated on nanowire generally have surrounded shapes of gate structure, which improve the device performance. Highly integrated circuits can also be achieved by fabricating on nano-scaled nanowires. But the numerical and SPICE simulation about the logic circuitry have never been reported and analyses of detailed parameters related to performance, such as channel doping, gate shapes, souce/drain contact and etc., were strongly needed. In our study, NAND and NOT logic circuits were simulated and characterized using 2- and 3-dimensional numerical simulation (SILVACO ATLAS) and built-in spice module(mixed mode).

• Journal of Korean Society of Water and Wastewater
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• v.25 no.3
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• pp.399-405
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• 2011

In a desalination technology using RO membranes, chemical cleaning makes damage for membrane surface and membrane life be shortened. In this research cleaning technology using direct osmosis (DO) was introduced to apply it under the condition of high pH and high concentration of feed. When the high concentration of feed is injected to the concentrate side after release of operating pressure, then backward flow occurred from treated water toward concentrated for osmotic pressure. This flow reduces fouling on the membrane surface. Namely, flux of DO was monitored under pH 3, 5, 10 and 12 conditions at feed concentrations of NaCl 40,000 mg/L, 120,000 mg/L and 160,000 mg/L. As a result, DO flux in pH 12 increased about 21% than pH 3. DO cleaning was performed under the concentrate NaCl 160,000 mg/L of pH 12 during 20 minutes. Three kinds of synthetic feed water were used as concentrates. They consisted of organic, inorganic and seawater; chemicals of SiO2 (200 mg/L), humic acid (50 mg/L) sodium alginate (50 mg/L) and seawater. As a result, fluxes were recovered to 17% in organic fouling, 15% in inorganic fouling and 14% of seawater fouling after cleaning using DO under the condition of concentrate NaCl 160,000 mg/L of pH 12.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.186-194
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• 2013

The relationship between composition and properties of enamel glass was investigated by introducing a mixture design. The enamel glass was manufactured by mixing various components under the following constraints: $45{\leq}SiO_2{\leq}55$, $10{\leq}B_2O_3{\leq}18$, $6{\leq}Na_2O{\leq}15$, $1{\leq}Li_2O{\leq}6$, $5{\leq}K_2O{\leq}10$, $0{\leq}TiO_2{\leq}8$, $0{\leq}ZrO_2{\leq}8$, 13.3MO (mol %). A mathematical model for the calculation of some properties of enamel glasses as a function of their composition was developed by the experimental statistical method. The results showed that the proposed model with the experimental measurement were in good agreement and the mixture experimental design was an effective method for optimizing the composition of the enamel glass with respect to its properties.

• Korean Journal of Materials Research
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• v.25 no.12
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• pp.708-712
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• 2015

This study reports the effects of $H_2S$ gas concentration on the properties of $Cu_2ZnSnS_4(CZTS)$ thin films. Specifically, sulfurization process with low $H_2S$ concentrations of 0.05% and 0.1%, along with 5% $H_2S$ gas, was studied. CZTS films were directly synthesized on Mo/Si substrates by chemical bath deposition method using copper sulfate, zinc sulfate heptahydrate, tin chloride dihydrate, and sodium thiosulfate pentahydrate. Smooth CZTS films were grown on substrates at optimized chemical bath deposition condition. The CZTS films sulfurized at low $H_2S$ concentrations of 0.05 % and 0.1% showed very rough and porous film morphology, whereas the film sulfurized at 5% $H_2S$ yielded a very smooth and dense film morphology. The CZTS films were fully crystallized in kesterite crystal form when they were sulfurized at $500^{\circ}C$ for 1 h. The kesterite CZTS film showed a reasonably good room-temperature photoluminescence spectrum that peaked in a range of 1.4 eV to 1.5 eV, consistent with the optimal bandgap for CZTS solar cell applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.287-287
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• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• Journal of the Korean Society for Heat Treatment
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• v.1 no.1
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• pp.13-23
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• 1988

The hardenability of alloyed ductile cast irons was studied for 54 different alloy compositions obtained from eight commercial and laboratory foundries. The alloying elements investigated for their effects on hardenability were Si(2.0 to 3.0%), Mn(0.0 to 0.8%), Mo(0.0 to 0.6%), Cu(0.0 to 1.5%), and Ni(0.0 to 1.5%). Two hardenability criteria, a first-pearlite hardenability criterion and a half-hard hardenability criterion, were used to determine hardenability of ductile irons. Prediction models for each hardenability criterion were developed by multiple regression analysis and were well agreed with previous experimental results. Molybdenum was the most potent hardenability promoting element followed by manganese, copper and nickel ; silicon had little effect on hardenability and reduced the hardenability as silicon content increased. When alloying elements were presented in combination, strong synergistic effects on the hardenability were observed especially between molybdenum, copper and nickel. The hardenability of ductile iron was strongly influenced by austenitizing temperature. Increasing austenitizing temperature up to $955^{\circ}C$, hardenability increased gradually but decreasing rate and then decreased as temperature increased above $955^{\circ}C$. Unless reducing segregation by very long-time annealing treatment, the hardenability of ductile iron was not significantly influenced by segregation of alloying elements.

• Journal of Korean Society on Water Environment
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• v.22 no.5
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• pp.865-870
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• 2006

The behavior and influence of EPS on membrane fouling by changing of hydraulic retention time was investigated, using lab. scale submerged membrane bio-reactor, which was operated with gravitational filtration and fed supernatant of primary sedimentation in waste water treatment plant as influent. The membrane was adopted micro-filter of polyethylene hollow fiber. EPS was analysed as polysaccharides and protein especially, into soluble and bound EPS separately. The concentration of soluble EPS was increased at short HRT, then membrane fouling was rapidly progressed and flux was depressed. The most of EPS clogged membrane pore were polysaccharides, while protein was important parameter affected on membrane fouling because of it's more accumulating in the more term operating.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.29.1-29.1
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• 2018

양극산화 표면처리 방법의 일종인 플라즈마 전해산화(PEO, Plasma electrolytic oxidation)는 금속 소재에 양극 전압을 인가하여 고경도의 산화 피막을 금속 표면에 형성시키는 표면처리 기술이다. PEO 공정은 피막의 국부적 유전체 파괴에 의한 아크의 발생을 동반하며, 형성된 산화 피막이 아크 발생에 의한 높은 열에 의해 결정화 되어 일반적인 양극산화 피막보다 우수한 경도와 내마모성을 가진다. 하지만 PEO 공정은 고전압을 필요로 하여 일반적인 양극산화 처리보다 소모되는 전력량이 많으며, 아크 발생에 의해 형성된 피막의 표면 거칠기가 높기 때문에 활용 분야가 제한되거나 후속 연마 공정을 필요로 하는 단점이 존재한다. 본 연구에서는 전류 파형이 알루미늄 합금의 플라즈마 전해산화 피막의 형성 거동에 미치는 영향을 직류 및 펄스전류를 사용하여 연구하였다. NaOH 및 $Na_2SiO_3$가 혼합된 전해액에서 직류 전류 밀도, 전압, 펄스폭을 달리하여 알루미늄 합금에 전류를 인가할 때 발생되는 아크의 거동, 형성된 산화 피막의 두께, 거칠기, 경도, 표면 및 단면 구조를 비교 분석하였다.

• Proceedings of the Korean Society of Broadcast Engineers Conference
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• 2006.11a
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• pp.269-272
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• 2006

홈 엔터테인먼트 서비스는 홈 네트워크 서비스의 하나로서 홈 네트워크를 통해 제공되는 TV, 영화, 게임과 같은 다양한 디지털 콘텐츠를 TV라는 매체를 통해 PC와 같은 TV와는 다른 디바이스에 존재하는 다양한 콘텐츠를 손쉽게 즐길 수 있는 콘텐츠 서비스의 형태라고 할 수 있다. 이러한 다양한 기기에 존재하는 콘텐츠를 손쉽게 이용할 수 있는 허브 장치로서 STB(Set-top Box)가 대두되고 있다. STB가 허브 장치로서의 기능을 하기 위해서는 서로 다른 기기들과의 연계시 발생하는 여러 문제점들(예 : 조작의 불편)을 해결하고 이를 통합 조정할 수 있는 어플리케이션이 필요하다. 본 논문에서는 STB와 멀티미디어 기기 중의 하나인 HTPC(Home Theater PC)를 예를 들어 두 기기간의 연동 환경에서 STB 리모컨을 통해 HTPC를 제어할 수 있는 어플리케이션에 대해 연구한다. 이를 위해 이종 단말기 간의 연동을 위해 RMI(Remote Method Invocation)의 클라이언트/서버 통신 메커니즘을 응용하였다. 이를 통해 HTPC 뿐만이 아닌 다양한 디바이스를 STB에 연결하여 활용할 수 있는 좋은 예가 될 수 있을 것이다.

• Journal of Korea Foundry Society
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• v.15 no.3
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• pp.235-241
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• 1995

In order to improve the production process of low cost and high purity Vanadium, this study was done to reduce $V_2O_5$ into V-Al master alloy by Aluminothermic Reduction, followed by refining of V-Al master alloy electron beam melting. As melting time was increased in electron beam melting of V, the contents of interstitial impurities and Al, Fe were decreased but the contents of Si, Mo and W were increased due to lower vapor pressure of these elements than that of matrix V. Consequently, it was profitable that melting of V was done for 180 seconds. In addition, with number of melting, the purity of V did not significantly vary, because volatile impurities in V were removed mostly during the first step of melting. As a result of V refining by electron beam melting, high purity Vanadium of 3N(99.91wt%) was acquired including interstitial impurities total contents of which were maximum 400ppm.