• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.217-218
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• 2000

This paper describes a formation of the Mo-silicide on Mo tip to compare the emission characteristics of the Mo tip. Cone-shaped Mo tip arrays were fabricated and silicidized by evaporating a 15nm-thick a-Si film on Mo tip arrays and annealing it in inert ambient at the temperature of $1000\;^{\circ}C$ for 60 sec. The $Mo_5Si_3$ phase of Mo-silicide was observed through X-ray diffraction (XRD) analysis. Although the gate voltage of the Mo-silicide tip increased by 38 V to obtain the current level of 20 nA/tip, the dependence of emission current on vacuum level was improved.

• Proceedings of the Korean Magnestics Society Conference
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• 1991.05a
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• pp.53-54
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• 1991

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1998.04b
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• pp.22-22
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• 1998

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1998.04b
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• pp.9-9
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• 1998

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1997.10a
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• pp.36-36
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• 1997

• Proceedings of the Korean Nuclear Society Conference
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• 2001.05a
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• pp.272.2-272
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.05a
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• pp.79-79
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• 2001

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.45-45
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• 1992

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.64-64
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• 2001

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 1999.04a
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• pp.21-21
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• 1999