• Journal of the Korea Society of Computer and Information
• /
• v.22 no.1
• /
• pp.63-69
• /
• 2017

In this paper, we propose a method to optimize the geometry and installation position of the mixer in the selective catalytic reduction (SCR) system by computational fluid dynamic(CFD). Using the commercial CFD software of CFD-ACE+, the flow dynamics of the flue gas was numerically analyzed for improving the injection uniformity of the reduction agent. Numerical analysis of the mixed gas heat flow into the upstream side of the primary SCR catalyst layer was performed when the denitrification facility was operated. The characteristics such as the flow rate, temperature, pressure loss and ammonia concentration of the mixed gas consisting of the flue gas and the ammonia reducing gas were examined at the upstream of the catalyst layer of SCR. The temperature difference on the surface of the catalyst layer is very small compared to the flow rate of the exhaust gas, and the temperature difference caused by the reducing gas hardly occurs because the flow rate of the reducing gas is very small. When the mixed gas is introduced into the SCR reactor, there is a slight tendency toward one wall. When the gas passes through the catalyst layer having a large pressure loss, the flow angle of the exhaust gas changes because the direction of the exhaust gas changes toward a smaller flow. Based on the uniformity of the flow rate of the mixed gas calculated at the SCR, it is judged that the position of the test port reflected in the design is proper.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.3 no.6
• /
• pp.112-122
• /
• 1995

As an alternative fuel producing less exhaust emissions, natural gas is of interest for use both in SI and CI engines. The potential of natural gas fuelled dual-fuel engine is considered high enough. However, much effort has to be made so that gaseous fuel is used efficiently with simultaneous minimum use of pilot oil. Hence, a simplified three-dimensional model, using a finite volume method in cylindrical coordinates, has been developed to facilitate an understanding of the dual-fuel combustion phenomena and to predict the complex interactions between the pilot distillate and natural gas. The computer model was calibrated by comparing it with the experimental results obtained from diesel engine like combustion bomb tests. In the pre-mixed natural gas combustion, the fuel burning was highly reliant on the injection condition and subsequent burning nature of the pilot distillate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.04a
• /
• pp.67-68
• /
• 2008

A simple bi-layer structure of organic light emitting diode (OLED) was used to study the characteristics of anode preparation. Indium tin oxide (ITO) anode surface treatment of OLEDs was performed to get the optimum condition for the ITO anode. The ITO surface was treated by $O_2$ or $O_2$ / Ar mixed gas plasma with different processing time. The electrical characteristics of OLED were improved by plasma treatment. The operating voltage of OLED with $O_2$ or $O_2$/Ar mixed gas plasma treated anodes decreases from 8.2 to 3.4 V and 3.2V, respectively. The $O_2$ /Ar mixed gas plasma treatment results in better electrical property.

• Proceedings of the Korean Radioactive Waste Society Conference
• /
• 2005.11b
• /
• pp.300-315
• /
• 2005

Recently plasma surface-cleaning or surface-etching techniques have been focused in the respect of decontamination of spent or used nuclear parts and equipment. In this study decontamination rate of metallic cobalt surface was experimentally investigated via its surface etching rate with a $CF_4-O_2$ mixed gas plasma and metallic surface wastes of cobalt oxides were simulated and decontaminated with $NF_3$ - Ar mixed gas plasma. Experimental results revealed that a mixed etchant gas with about $80{\%}\;CF_4-20{\%}\;O_2$ gives the highest reaction rate of cobalt disk and the rate reaches with a negative 300 DC bias voltage up to $0.43\;{\mu}m$/min at $380^{\circ}C$ and $20{\%}\;NF_3-80\%$ Ar mixed gas gives $0.2\;{\mu}m$/min of reaction rate of cobalt oxide film.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
• /
• 2003.10a
• /
• pp.96-98
• /
• 2003

Many of research efforts have been focused on the improvement of critical current density Jc of silver-sheathed Bi-2223 tapes for practical applications of material. Bi-2223 superconducting wires with 55 filaments were fabricated by stacking, drawing process with different heat-treatment histories. After rolling process, Bi-2223 tapes were heat-treatment at 780~826$^{\circ}C$ with variable mass flow rate of mixed gas. In this study, the effect of changes in the variable mass flow rate of mixed gas during the heat treatment of Bi-2223/Ag tapes has been investigated. Distinct differences were observed in the Bi-2223 phase and critical current as flow rate of mixed gas. We could achieve proper conditions of mass flow rate of mixed gas for Ag-alloy clad Bi-2223 superconducting tapes.

• Proceedings of the SAREK Conference
• /
• 2008.11a
• /
• pp.181-185
• /
• 2008

The new concept for liquefaction of natural gas has been designed and simulated in this paper. Conventional liquefaction cycles are usually composed with Joule-Thomson valves at lower temperature refrigerant cycle. The new concept of natural gas liquefaction is discussed. The main difference with conventional liquefaction process is the presence of the turbine at low temperature of MR (mixed refrigerant) cycle. The turbine acts as expander but also as an energy generator. This generated energy is provided to the compressor which consumes energy to pressurize refrigerants. The composition of the mixed refrigerant is investigated in this study. Components of the refrigerant are methane, propane and nitrogen. Composition for new process is traced with Aspen HYSYS software. LNG heat exchangers are analyzed for the new process. Heating and cooling curves in heat exchangers were also analyzed.

• Special Issue of the Society of Naval Architects of Korea
• /
• 2008.09a
• /
• pp.126-132
• /
• 2008

Cutting procedures whose qualifies are determined by various variables largely influences shipbuilding productivity. Particularly, defects in cutting shapes and cutting surface results in delay of the post shipbuilding stages such as welding and assemblage process. Because cutting procedures are influenced by various numbers of requirements according to the plate thickness, cutting precision can be maintained when the cutting conditions are appropriate. Existing cutting procedures utilize fossil fuels such as propane or ethylene as the main fuel component. Especially, when fossil fuel is applied to thick plate cutting, this process gives relatively slow cutting speed and generates large quantities of harmful polluting fumes. Recently, hydrogen-oxygen mixed gas generated by electrically dissociating water into Hydrogen and oxygen components is welcomed as an alternative fuel source. Also recent results report that alternative cutting fuel improves the cutting Dualities and speed. This paper presents that cutting characteristics and optimum cutting condition of hydrogen-oxygen mixed gas.

• The Korean Journal of Ceramics
• /
• v.6 no.2
• /
• pp.124-128
• /
• 2000

Electrical properties of $ZrO_2-TiO_2Yb_2O_3$mixed conductor (Ti-YbSZ) were investigated. This mixed conductor can be applied as a membrane for gas separation at high temperatures. The total conductivity decreased with increasing the $TiO_2$concentration. At high temperatures, the rate of the conductivity degradation became smaller than that at low temperatures. From the oxygen partial pressure dependence of the total conductivity of Ti-YbSZ, the electronic conductivity increased with increasing $TiO_2$concentration at low oxygen partial pressures and at high temperatures. Both 15 and 20 mol% $TiO_2$doped YbSZ showed high oxygen permeability. Mixed conductors, which has high $TiO_2$concentration in YbSZ, are promising materials for using as a membrane for gas separation at high temperatures.

• Journal of the Korean Ceramic Society
• /
• v.55 no.1
• /
• pp.1-20
• /
• 2018

Semiconducting nanomaterials have attracted considerable interest in recent years due to their high sensitivity, selectivity, and fast response time. In addition, for portable applications, they have low power consumption, lightweight, simple in operation, a low maintenance cost. Furthermore, it is easy to manufacture microelectronic sensor structures with metallic oxide sensitive thin layers. The use of semiconducting metal oxides to develop highly sensitive chemiresistive sensing systems remains an important scientific challenge in the field of gas sensing. According to the sensing mechanisms of gas sensors, the overall sensor conductance is determined by surface reactions and the charge transfer processes between the adsorbed species and the sensing material. The primary goal of the present study is to explore the possibility of using semiconducting mixed metal oxide nanostructure as a potential sensor material for selective gases.

• Korean Journal of Materials Research
• /
• v.28 no.4
• /
• pp.241-246
• /
• 2018

$TaN_x$ film is grown by plasma enhanced atomic layer deposition (PEALD) using t-butylimido tris(dimethylamido) tantalum as a metalorganic source with various reactive gas species, such as $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. Although the pulse sequence and duration are the same, aspects of the film growth rate, microstructure, crystallinity, and electrical resistivity are quite different according to the reactive gas. Crystallized and relatively conductive film with a higher growth rate is acquired using $NH_3$ as a reactive gas while amorphous and resistive film with a lower growth rate is achieved using $N_2+H_2$ mixed gas. To examine the relationship between the chemical properties and resistivity of the film, X-ray photoelectron spectroscopy (XPS) is conducted on the ALD-grown $TaN_x$ film with $N_2+H_2$ mixed gas, $NH_3$, and $H_2$. For a comparison, reactive sputter-grown $TaN_x$ film with $N_2$ is also studied. The results reveal that ALD-grown $TaN_x$ films with $NH_3$ and $H_2$ include a metallic Ta-N bond, which results in the film's higher conductivity. Meanwhile, ALD-grown $TaN_x$ film with a $N_2+H_2$ mixed gas or sputtergrown $TaN_x$ film with $N_2$ gas mainly contains a semiconducting $Ta_3N_5$ bond. Such a different portion of Ta-N and $Ta_3N_5$ bond determins the resistivity of the film. Reaction mechanisms are considered by means of the chemistry of the Ta precursor and reactive gas species.