• 한국전기전자재료학회논문지
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• 제23권4호
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• pp.343-346
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• 2010

We have investigated growth of CdTe thin films by using (As, GaAs) buffer layers for application of large scale IR focal plane arrays(IFPAs). Buffer layers were grown by molecular beam epitaxy(MBE), which reduced the lattice mismatch of CdTe/Si and prevented native oxide on Si substrates. CdTe thin films were grown by metal organic chemical deposition system(MOCVD). As a result, polycrystalline CdTe films were grown on Si(100) and arsenic coated-Si(100) substrate. In other case, single crystalline CdTe(400) thin film was grown on GaAs coated-Si(100) substrate. Moreover, we observed hillock structure and mirror like surface on the (400) orientated epitaxial CdTe thin film.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1593-1595
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• 2002

Single crystal 3C-SiC(cubic silicon carbide) thin-films were deposited on Si(100) wafers up to a thickness of 4.3 ${\mu}m$ by APCVD method using HMDS(hexamethyildisilane) at $1350^{\circ}C$. The HMDS flow rate was 0.5 sccm and the carrier gas flow rate was 2.5 slm. The HMDS flow rate was important to get a mirror-like crystal surface. The growth rate of the 3C-SiC films was 4.3 ${\mu}m/hr$. The 3C-SiC epitaxial films grown on Si(100) were characterized by XRD, AFM, RHEED, XPS and raman scattering, respectively. The 3C-SiC distinct phonons of TO(transverse optical) near 796 $cm^{-1}$ and LO(longitudinal optical) near $974{\pm}1cm^{-1}$ were recorded by raman scattering measurement. The hetero-epitaxially grown films were identified as the single crystal 3C-SiC phase by XRD spectra($2{\theta}=41.5^{\circ}$).

• 전기학회논문지
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• 제59권3호
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• pp.636-644
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• 2010

A method for the detection of on-road succeeding vehicles using visual characteristic features like horizontal edges, shadow, symmetry and intensity is proposed. The proposed method uses the prominent horizontal edges along with the shadow under the vehicle to generate an initial estimate of the vehicle-road surface contact. Fast symmetry detection, utilizing the edge pixels, is then performed to detect the presence of vertically symmetric object, possibly vehicle, in the region above the initially estimated vehicle-road surface contact. A window defined by the horizontal and the vertical line obtained from above along with local perspective information provides a narrow region for the final search of the vehicle. A bounding box around the vehicle is extracted from the horizontal edges, symmetry histogram and a proposed squared difference of intensity measure. Experiments have been performed on natural traffic scenes obtained from a camera mounted on the side view mirror of a host vehicle demonstrate good and reliable performance of the proposed method.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.98-104
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• 2002

CeO$_2$ and NiO buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition(MOCVD) and the deposition behavior were investigated. The degree of texture of deposited CeO$_2$ and NiO films was strongly dependent on the deposition temperature(T$\sub$d/) and oxygen partial pressure(P$\sub$O$_2$/). ($\ell$00) textured films were well deposited at specific deposition temperatures and oxygen partial pressures. The in-plane and out of plane textures estimated form the full width half maximum of the pole figure peaks were less than 10$^{\circ}$. The surface morphology showed that the CeO$_2$ films consisted of columnar grains grown normal to the Ni substrates, while NiO films were slate and clean like a mirror. The surface roughness of both films estimated by atomic force microscopy(AFM) were as smooth as 3-10 m. The growth rate of the films is much faster than that of other physical deposition methods.

• 한국전기전자재료학회논문지
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• 제19권8호
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• pp.732-736
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• 2006

This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

• 한국전기전자재료학회논문지
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• 제20권2호
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• pp.156-161
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• 2007

This paper describes the characteristics of polycrystalline ${\beta}$ or 3C (cubic)-SiC (silicon carbide) thin films heteroepitaxailly grown on Si wafers with thermal oxide. In this work, the poly 3C-SiC film was deposited by APCVD (atmospheric pressure chemical vapor deposition) method using HMDS (hexamethyildisilane: $Si_{2}(CH_{3}_{6})$ single precursor. The deposition was performed under various conditions to determine the optimized growth conditions. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_{2}$ were measured by SEM (scanning electron microscope). Finally, depth profiling was invesigated by GDS (glow discharge spectrometer) for component ratios analysis of Si and C according to the grown 3C-SiC film thickness. From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror and low defect. Therfore, the poly 3C-SiC thin film is suitable for extreme environment, Bio and RF MEMS applications in conjunction with Si micromaching.

• 한국공작기계학회논문집
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• 제17권2호
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• pp.1-6
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• 2008

In recent years, developments in the semiconductor and electronic industries have brought a rapid increase in the use of large size silicon wafer. For further improvement of the ultra precision surface and flatness of Si wafer necessary to high density ULSI, it is known that polishing is very important. However, most of these investigation was experiment less than 300mm diameter. Polishing is one of the important methods in manufacturing of Si wafers and in thinning of completed device wafers. This study reports the machining variables that has major influence on the characteristic of wafer polishing. It was adapted to polishing pressure, machining speed, and the slurry mix ratio, the optimum condition is selected by ultra precision wafer polishing using load cell and infrared temperature sensor. The optimum machining condition is selected a result data that use a pressure and table speed data. By using optimum condition, it achieves a ultra precision mirror like surface.

• 대한기계학회논문집A
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• 제35권12호
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• pp.1641-1646
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• 2011

자기연마공정은 유동성이 높은 연마입자를 활용하기 때문에 곡면 및 그루브 형상에도 적용이 가능한 장점을 지니고 있다. 본 연구에서는 제 2세대 자기연마법을 활용하여 그루브 형상에 대한 자기연마가공 특성을 평가하여, 이를 향후 연료전지 채널과 같은 3차원 형상의 자기연마에 활용하고자 한다. 실험은 최대 1.5mm 깊이의 그루브에 대해 자기연마가공 후 슬롯부 및 랜드부의 표면거칠기 변화를 관찰하였다. 그 결과 랜드부의 길이가 증가하고 그루브의 깊이가 깊어질수록 랜드부의 표면거칠기 향상정도는 높아졌다. 또한 슬롯부의 표면거칠기 향상정도는 랜드부와 슬롯부의 길이비가 증가하고 그루브의 깊이가 깊어질수록 감소하는 경향을 나타내었다. 마지막으로 자기연마가공을 통해서 그루브의 형상에는 큰 변화없이, 그루브의 모서리에 생성된 버를 효과적으로 제거할 수 있었다.

• Applied Microscopy
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• 제41권4호
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• pp.223-228
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• 2011

백색광 주사간섭계는 다양한 시료의 표면 특성을 분석하기 위하여 널리 활용되고 있다. 이 기법은 재료공학 분야에서 오래 전부터 이용되었으며 정성적인 형상 이미지 이외에도 정량적인 3차원 결과를 제공한다. 이 기법에서는 백색광을 광원으로 이용하는데, 기준면과 측정면에서의 반사광을 합쳐서 형성되는 간섭신호를 형태 정보로 활용한다. z축 결과인 고도는 회색수준으로 구분되어 제시된다. 이 기법을 통하여 대영역으로 생물 시료를 신속하고 비파괴적으로 형태를 계측할 수 있다. 연골세포, 치아 법랑질, 식물 잎을 대상으로 적용한 사례가 있다. 특히 표면 구조물의 폭, 길이, 경사각과 같은 특성도 이 기법을 통하여 정량화할 수 있다. 이 기법을 적용하기 위하여 일정 수준의 반사도가 필요한데, 식물 잎에서의 반사도는 그 요건을 충족하였다. 전도성 금속의 코팅 등 부가적인 시료 전처리가 필요 없으므로 이 기법을 통한 생물 시료의 정량적 측정이 더욱 증가할 것으로 예상한다.

• 대한기계학회논문집A
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• 제34권10호
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• pp.1499-1505
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• 2010

유연성 공구를 가진 자기연마는 고경도 소재 및 자유곡면 형상 표면의 나노메터급 가공이 가능한 강점을 지닌다. 이러한 자기연마에서 자기연마입자는 시간적, 비용적 측면에서 단순 혼합형 입자가 유리하다. 그러나 단순혼합형 입자는 가공 중 공구로부터 쉽게 이탈하게 되어 가공 시간이 증가 할수록 매우 낮은 가공 효율을 가진다. 따라서 본 연구에서는 단순 혼합형 입자에 오일을 대신하여 실리콘 겔을 매개물로 사용하는 자기연마 입자를 연구하고 그 특성을 분석하였다. 그 결과 자기력 향상과 별개로 입자간 응집력을 높여 입자의 이탈을 줄여 표면거칠기의 향상에 효과가 높음을 확인 하였다. 그리고 실험계획법을 이용하여 고경도 소재인 텅스텐 카바이드의 실리콘 겔 자기연마에서 각 공정변수가 표면거칠기의 향상에 미치는 특성을 평가하고 이를 최적화 하였다.