• 전기전자학회논문지
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• 제15권4호
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• pp.319-323
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• 2011

본 논문에서는 Mobile 기기의 다양한 기능을 지원하기 위해 사용되는 내부 회로들의 낮은 전압 레벨을 지원하기위해 가장 널리 사용되는 SMPS(Switch Mode Power Supply)방식의 Buck converter를 설계한다. 제안된 Buck converter는 넓은 부하 영역에서 높은 효율을 가지는 것을 목적으로 일반적인 구동 방식인 PWM (Pulse Width Modulation)Mode의 고 효율 저 리플 특성 구현 외에 PFM(Pulse Frequency Modulation) Mode를 적용하여 낮은부하 조건 혹은 부하를 사용하지 않는 대기 시간에서도 고 효율 저 리플 특성을 가지는 Dual mode synchronous buck converter를 설계한다. 이를 위해 본 논문에서는 부하 변동 시에 PWM - PFM Mode로의 효율적인 변환방법 및 저 리플 특성을 위한 방법을 제안한다. 또한 제안된 IC는 Mobile 기기에 부합하는 입력 전압 범위 2.5V-5V를 가지며, 2.5Mhz의 높은 주파수로 동작하여 리플 특성이 양호하고 집적화가 유리하다. 고효율을 위하여 Synchronous Type 설계 및 Dynamic Control 방식을 적용하였다. 보호 기능으로는 회로 동작의 초기 시에 발생하는 Inrush Current를 방지하기 위한 Soft start function 외에 Current limit, Thermal shutdown function, UVLO 회로가 내장되어 신뢰성을 높였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권4호
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• pp.295-301
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• 2008

Recently, the demand on mm-wave (millimeter-wave) applications has increased dramatically. While circuits operating in the mm-wave frequency band have been traditionally implemented in III-V or SiGe technologies, recent advances in Si MOSFET operation speed enabled mm-wave circuits realized in a Si CMOS technology. In this work, a 58 GHz CMOS LC cross-coupled VCO (Voltage Controlled Oscillator) was fabricated in a $0.13-{\mu}m$ Si RF CMOS technology. In the course of the circuit design, active device models were modified for improved accuracy in the mm-wave range and EM (electromagnetic) simulation was heavily employed for passive device performance predicttion and interconnection parasitic extraction. The measured operating frequency ranged from 56.5 to 58.5 GHz with a tuning voltage swept from 0 to 2.3 V. The minimum phase noise of -96 dBc/Hz at 5 MHz offset was achieved. The output power varied around -20 dBm over the measured tuning range. The circuit drew current (including buffer current) of 10 mA from 1.5 V supply voltage. The FOM (Figure-Of-Merit) was estimated to be -165.5 dBc/Hz.

• 한국가스학회지
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• 제1권1호
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• pp.106-112
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• 1997

본 연구는 직류 저항회로의 개폐불꽃에 의한 폭발성 가스의 점화한계를 실험적으로 고찰하였다. 실험은 IEC형 불꽃점화 시험장치의 폭발용기에 폭발성 가스(메탄-공기 프로판-공기, 에틸렌-공기, 수소-공기)를 각각 넣고 텅스텐 전극과 카드뮴 전극사이에서 발생하는 3,200회의 개폐불꽃에 의한 점화유무를 확인하므로서 점화한계를 구하였다. 또한 실험장치의 점화감도교정을 실험한 후에 실시하므로서 실험의 정확성을 기하였다. 실험결과 최소 점화 전류값을 갖는 최소점화한계농도는 메탄-공기 8.3 [$Vol\%$], 프로판-공기 5.25[$Vol\%$], 에틸렌-공기 7.8[$Vol\%$], 수소-공기 21[$Vol\%$]로서 기존의 실험결과와 유사한 결과를 나타내었다. 또한 최소점화한계농도에서 전압과 최소점화잔류와의 관계를 구한 결과 최소점화한계는 메탄, 프로판, 에틸렌, 수소가스의 순서로 낮아졌고 점화전류의 크기는 전원전압의 크기와 반비례하고, 전극의 과열현상으로 인하여 전압 약 20(V)이하에서는 최소점화전류가 2(A)를 넘으면서 심화한계곡선이 급격히 상승한다는 것 등을 알 수 있었다.

• 한국가스학회지
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• 제2권4호
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• pp.79-84
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• 1998

본 논문은 고주파 발생장치와 IEC형 불꽃점화 시험장치를 이용하여 라디오 주파수 범위내에서 발생하는 개폐불꽃에 의한 LPG-Air 5.25[Vol$\%$]의 혼합가스에 대한 최소점화한계전압을 구하였다. 그 결과 LPG-Air 혼합가스는 주파수가 높을수록 최소점화한계전압도 높아졌으며, 특히 3[KHz]에서 10[KHz]사이에서 현저히 증가함을 알 수 있었다. 이는 3[KHz]까지는 1회의 방전에너지에 의해 점화가 발생되지만 3[KHz]이상에서는 2회 이상의 방전에너지가 누적되어 점화가 일어남을 알 수 있었고 그 이유는 방전과 방전간의 휴지기간이 존재하므로써 생기는 에너지의 손실이 그 원인으로 생각된다. 본 연구결과는 가스가 존재하는 위험장소에서도 안전하게 사용될 수 있는 통신장비나 각종탐지기 등에 응용될 수 있는 본질안전 방폭형 고주파 전기기기의 연구개발을 위한 기본자료로서 뿐만 아니라 이들 장비의 방폭성능에 대한 시험자료로도 활용가능할 것으로 사료된다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제17권2호
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• pp.216-222
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• 2017

The most prominent challenge for MOSFET scaling is to reduce power consumption; however, the supply voltage ($V_{DD}$) cannot be scaled down because of the carrier injection mechanism. To overcome this limit, a new type of field-effect transistor using positive feedback as a carrier injection mechanism (FBFET) has been proposed. In this study we have investigated the electrical characteristics of a $Si_{1-x}Ge_x$ FBFET with one gate and one-sided $Si_3N_4$ spacer using TCAD simulations. To reduce the drain bias dependency, $Si_{1-x}Ge_x$ was introduced as a low-bandgap material, and the minimum subthreshold swing was obtained as 2.87 mV/dec. This result suggests that a $Si_{1-x}Ge_x$ FBFET is a promising candidate for future low-power devices.

• Journal of Electrical Engineering and Technology
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• 제10권1호
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• pp.165-175
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• 2015

Energy storage system has been widely applied in power distribution sectors as well as in renewable energy sources to ensure uninterruptible power supply. This paper presents a model predictive algorithm to control a bidirectional AC-DC converter, which is used in an energy storage system for power transferring between the three-phase AC voltage supply and energy storage devices. This model predictive control (MPC) algorithm utilizes the discrete behavior of the converter and predicts the future variables of the system by defining cost functions for all possible switching states. Subsequently, the switching state that corresponds to the minimum cost function is selected for the next sampling period for firing the switches of the AC-DC converter. The proposed model predictive control scheme of the AC-DC converter allows bidirectional power flow with instantaneous mode change capability and fast dynamic response. The performance of the MPC controlled bidirectional AC-DC converter is simulated with MATLAB/Simulink(R) and further verified with 3.0kW experimental prototypes. Both the simulation and experimental results show that, the AC-DC converter is operated with unity power factor, acceptable THD (3.3% during rectifier mode and 3.5% during inverter mode) level of AC current and very low DC voltage ripple. Moreover, an efficiency comparison is performed between the proposed MPC and conventional VOC-based PWM controller of the bidirectional AC-DC converter which ensures the effectiveness of MPC controller.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.516-520
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• 1991

This paper presents a comparative analysis of two inverter power supply topologies for induction heating and melting applications. The comparison is based on criteria such as resonant condition, component ratings, minimum and maximum operating frequencies, operation under varying load conditions, inverter starting current, and diode reverse recovery time. The voltage source series/parallel resonant inverters are found to offer the best overall performance with respect to converter utilization.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 학술회의 논문집 정보 및 제어부문 A
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• pp.67-70
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• 2003

In this paper the main topologies of one-bit full adders, including the most interesting of those recently proposed, are analyzed and compared for speed, power consumption, and power-delay product. The comparison has been performed on circuits, optimized transistor dimension to minimize power-delay product. The investigation has been carried out with properly defined simulation runs on a Cadence environment using a 0.25-${\mu}m$ process, also including the parasitics derived from layout. Performance has been also compared for different supply voltage values. Thus design guidelines have been derived to select the most suitable topology for the design features required. This paper also proposes a novel figure of merit to realistically compare n-bit adders implemented as a chain of one-bit full adders. The results differ from those previously published both for the more realistic simulations carried out and the more appropriate figure of merit used. They show that, except for short chains of blocks or for cases where minimum power consumption is desired, topologies with only pass transistors or transmission gates are not attractive.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(5)
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• pp.191-194
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• 2000

A 2.4 GHz single ended two stage low noise amplifier(LNA) is designed for Bluetooth application. The circuit was implemented in a standard digital 0.25 $\mu\textrm{m}$ CMOS process with one poly and five metal layers. At 2.4 GHz, the LNA dissipates 34.5 mW from a 2.5V power supply voltage and provides 24.6 dB power gain, 2.85 dB minimum noise figure, -66.3 dB reverse isolation, and an output 1-dB compression level of 8.5 dBm.

• 전자공학회논문지C
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• 제35C권8호
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• pp.42-51
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• 1998

An 8th-order elliptic low-pass filter with cutoff frequency of 3.13kHz is presented. The design procedure is based on teh 1/s impedance transformation which is applied to a minimum capacitor LC ladder network.The tranformed network is implemented with resistors and high Q frequency-dependent negative resistors (FDNR's). The high Q FDNR is realized with two transadmittance amplifiers. Detailed SPICE simulations show that the iflter has pass-band ripple of 0.18dB, stop-band attenuation over 100dB, cutoff frequency of 3.13 khz, and cutoff frequency temperature coefficient of 8.5ppm/.deg. C at supply voltage of .+-.5V.