• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.10 s.352
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• pp.90-97
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• 2006

We report our research work on the millimeter-wave broadband amplifier integrating the shunt peaking technology with the cascode configuration. The millimeter-wave broadband cascode amplifier on MIMIC technology was designed and fabricated using $0.1{\mu}m\;{\Gamma}-gate$ GaAs PHEMT, CPW, and passive library. The fabricated PHEMT has shown a transconductance of 346.3 mS/mm, a current gain cut off frequency ($f_T$) of 113 GHz, and a maximum oscillation frequency ($f_{max}$) of 180 GHz. To prevent oscillation of designed cascode amplifier, a parallel resistor and capacitor were connected to drain of common-gate device. For expansion of the bandwidth and flatness of the gain, we inserted the short stub into bias circuits and the compensation transmission line between common-source device and common-gate device, and then their lengths were optimized. Also, the input and output stages were designed using the matching method to obtain the broadband characteristic. From the measurement, we could confirm to extend bandwidth and flat gain by integrating the shunt peaking technology with the cascode configuration. The cascode amplifier shows the broadband characteristic from 19 GHz to 53.5 GHz. Also, the average gain of this amplifier is about 6.5 dB over the bandwidth.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.2
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• pp.67-73
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• 2010

We have developed a millimeter-wave passive imaging system with reflector for detection of concealed objects. We have designed a millimeter-wave sensor, control device for reflector control, and a lens for focusing of millimeter-wave signal at center frequency of 94GHz. DC signal from millimeter-wave sensor output is filtered by low pass filter and amplified by video amplifier, and then converted into digital signal by using ADC/DAQ. This signal is image processed by computer, and it is possible to obtain millimeter-wave passive image with resolution of $18{\times}64$ pixel using the fabricated system. It is shown that we can obtain the image of men and concealed object with the system.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.471-472
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• 2006

The passivation technology is very important, because this technology can protect a device against the influence of ambient environment, and prevent the performance reduction. In this paper, we fabricated the $0.1{\mu}m\;{\Gamma}$-gate InAlAs/InGaAs metamorphic high electron mobility transistors (MHEMTs) on GaAs substrates using the low-k benzocyclobutene (BCB) and $Si_3N_4$ as a passivation and we performed the comparisons of characteristics of the MHEMTs. After passivation, the DC and RF measurement results were decreased either the conventional Si3N4 or BCB layers. The decrement of the BCB passivation was smaller than the $Si_3N_4$ passivation.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.30-37
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• 2002

A focusing grating coupler (FGC) was not fabricated by the 'Continuous Path Control'writing strategy but by an electron-beam lithography system of more general exposure mode, which matches not only the address grid with the grating period but also an integer multiple of the address grid resolution (5 nm). To more simplify the fabrication, we are able to reduce a process step without large decrease of pattern quality by excluding a conducting material or layer such as metal (Al, Cr, Au), which are deposited on top or bottom of an e-beam resist to prevent charge build-up during e-beam exposure. A grating pitch period and an aperture feature size of the FGC designed and fabricated by e-beam lithography and reactive ion etching were ranged over 384.3 nm to 448.2 nm, and 0.5 $\times$ 0.5 mm$^2$area, respectively. This fabrication method presented will reduce processing time and improve the grating quality by means of a consideration of the address grid resolution, grating direction, pitch size and shapes when exposing. Here our investigations concentrate on the design and efficient fabrication results of the FGC for coupling from slab waveguide to a spot in free space.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.4
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• pp.45-50
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• 2004

In this paper, we present the low voltage and high efficiency Q-band MIMIC oscillator using device-level power combined structure. The oscillator was successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs PHEMTS and the CPW transmission line. We show that the highest efficiency is 19 % with an output power of 2.6 ㏈m at a frequency of 34.56 ㎓. The operating voltage of the oscillator is 2.2 V which is lower voltage than that of previously reported oscillators at Q-band. And the maximum output power of 6.7 ㏈m was obtained at a frequency of 34.56 ㎓.

• Biomedical Science Letters
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• v.17 no.1
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• pp.79-84
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• 2011

Photodynamic therapy consists of a photosensitizer, suitable light source and oxygen. The excitation of the photosensitizer at a cancer mass results in oxidation which would ultimately reduce the mass via apoptosis. Millimeter wave (MMW) therapy has also been known to be effective on cancer cell mass reduction, human cell regeneration and immunity enhancement among the Russian clinicians and scientists. In the present study, the two modalities were combined to achieve synergistic effects while reducing the administration dosage of the photosensitizer, photogem, thus minimizing the side effects. The CT-26 adenocarcinoma cell mass was implanted on mice and the tumors were exposed to a simple MMW irradiation or a combined treatment of MMW and PDT. The treatments continued for 4 weeks and the size of the tumor was measured continuously. The significant therapeutic result of MMW was not found during 4 weeks, preferably more cancer recurrence possibility after MMW irradiation was observed. The results of this study suggest that the combination of MMW irradiation and photodynamic treatment should not be recommended. The result of the MMW treatment alone, however, displayed suppressive effect on cancer cell proliferation for both in vitro and in vivo. The results of the present study suggest that the millimeter wave therapy deserves a further study.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.1-8
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• 2007

The DC characteristics of GaAs Gunn diode are investigated as a preliminary study on the planar grade gap injector GaAs Gunn diode which is the transferred electron device with high output power and dc-rf conversion efficiency. The Gunn devices we fabricated were confirmed to have the DC characteristics of negative differential resistance(NDR). We discussed the nature of the NDR effect, including the electron intervalley transfer; the NDR effect was examined for six different cathode radii.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.3
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• pp.35-40
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• 2024

In this paper, the design, implementation, and analysis of a device capable of transmitting and receiving millimeter-wave signals and performing channel sounding measurements in atmospheric conditions at distances of up to approximately 10km outdoors are presented. The device is expected to be instrumental in studying the propagation characteristics of millimeter-wave frequencies. Utilizing data such as received power levels and power delay profiles (PDPs), comparisons with predicted values using path loss, K-factor, and other propagation models are facilitated. The mobile transceiver unit, integrated onto a vehicle platform, allows for flexible adjustment of transmitter and receiver positions, while synchronization issues with distance are mitigated using a rubidium atomic clock. Furthermore, automatic boresight alignment using scanning techniques is employed to locate the main sector of the antenna.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.4
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• pp.295-301
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• 2008

Recently, the demand on mm-wave (millimeter-wave) applications has increased dramatically. While circuits operating in the mm-wave frequency band have been traditionally implemented in III-V or SiGe technologies, recent advances in Si MOSFET operation speed enabled mm-wave circuits realized in a Si CMOS technology. In this work, a 58 GHz CMOS LC cross-coupled VCO (Voltage Controlled Oscillator) was fabricated in a $0.13-{\mu}m$ Si RF CMOS technology. In the course of the circuit design, active device models were modified for improved accuracy in the mm-wave range and EM (electromagnetic) simulation was heavily employed for passive device performance predicttion and interconnection parasitic extraction. The measured operating frequency ranged from 56.5 to 58.5 GHz with a tuning voltage swept from 0 to 2.3 V. The minimum phase noise of -96 dBc/Hz at 5 MHz offset was achieved. The output power varied around -20 dBm over the measured tuning range. The circuit drew current (including buffer current) of 10 mA from 1.5 V supply voltage. The FOM (Figure-Of-Merit) was estimated to be -165.5 dBc/Hz.

• Proceedings of the IEEK Conference
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• 2001.06e
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• pp.25-28
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• 2001

This paper introduce a millimeter-wave radar system. As Fig 1 shows, This system consists of millimeter-wave radar front-end and digital signal processing parts through receive waves regarding up-coming obstacles. The system works as follow process; (1) Generate regular tripodal waves using the FMCW pulse generator (2) Transmit/Receive waves regarding up-coming obstacles (3) Analog filtering (4) FIFO memory interface (5) FFT(Fast Fourier Transform) (6) Calculation of distance / speed between cars (7) Object display and calibration. We have progress to solve the problem like as increase of traffic accidents causing damage and injuries due to the increased number of motor vehicles and long distance driving, and Need for a device to help drivers who are in trouble due to bad weather conditions. We are expect to Take the lead as a core technology in the ITS industry and to develop circuit and signal processing technologies related to millimeter-wave bandwidth.