• Title/Summary/Keyword: Migration circuit

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Dominant Migration Element in Electrochemical Migration of Eutectic SnPb Solder Alloy in D. I. Water and NaCl Solutions (증류수 및 NaCl 용액내 SnPb 솔더 합금의 Electrochemical Migration 우세 확산원소 분석)

  • Jung, Ja-Young;Lee, Shin-Bok;Yoo, Young-Ran;Kim, Young-Sik;Joo, Young-Chang;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.3 s.40
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    • pp.1-8
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    • 2006
  • Higher density integration and adoption of new materials in advanced electronic package systems result in severe electrochemical reliability issues in microelectronic packaging due to higher electric field under high temperature and humidity conditions. Under these harsh conditions, metal interconnects respond to applied voltages by electrochemical ionization and conductive filament formation, which leads to short-circuit failure of the electronic package. In this work, in-situ water drop test and evaluation of corrosion characteristics for SnPb solder alloys in D.I. water and NaCl solutions were carried out to understand the fundamental electrochemical migration characteristics and to correlate each other. It was revealed that electrochemical migration behavior of SnPb solder alloys was closely related to the corrosion characteristics, and Pb was primarily ionized in both D.I. water and $Cl^{-}$ solutions. The quality of passive film formed at film surface seems to be critical not only for corrosion resistance but also for ECM resistance of solder alloys.

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RETRACTED: Novel Flicker Migration and EMI Noise Reduction Circuit for AC Direct LED Lightings [JEET, Vol. 12, No. 2, March 2017]

  • Suh, Youngsuk;Kim, Minjae;Ahn, Chang-hoi
    • Journal of Electrical Engineering and Technology
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    • v.13 no.1
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    • pp.532-532
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    • 2018
  • This article has been retracted at the request of the authors and/or the Editor in Chief. Reason: After the paper published, the authors have found that the intellectual property for this paper was a company's own. As a result, the authors have elected to withdraw the complete article with apologies to the scientific community

Chlorine effect on ion migration for PCBs under temperature-humidity bias test (고온고습 전원인가 시험에서 Cl에 의한 이온 마이그레이션 불량)

  • Huh, Seok-Hwan;Shin, An-Seob
    • Journal of Welding and Joining
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    • v.33 no.3
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    • pp.47-53
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    • 2015
  • By the trends of electronic package to be more integrative, the fine Cu trace pitch of organic PCB is required to be a robust design. In this study, the short circuit failure mechanism of PCB with a Cl element under the Temperature humidity bias test ($85^{\circ}C$/85%RH/3.5V) was examined by micro-structural study. A focused ion beam (FIB) and an electron probe micro analysis (EPMA) were used to polish the cross sections to reveal details of the microstructure of the failure mode. It is found that $CuCl_x$ were formed and grown on Cu trace during the $170^{\circ}C$/3hrs and that $CuCl_x$ was decomposed into Cu dendrite and $Cl_2$ gas during the $85^{\circ}C$/85%RH/3.5V. It is suggested that Cu dendrites formed on Cu trace lead to a short circuit failure between a pair of Cu traces.

Effect of environmental conditions on the stock structure and abundance of the Pacific saury, Cololabis saira in the Tsushima Warm Current region (대마난류계 꽁치의 자원구조와 풍도에 미치는 해양환경의 영향)

  • Gong, Yeong;Seo, Yeong-Sang
    • Journal of Environmental Science International
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    • v.13 no.5
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    • pp.449-467
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    • 2004
  • Interannual and decadal scale changes in body size of Pacific saury, catch and catch per unit effort were examined to investigate the environmental effects on the stock structure and abundance in the Tsushima Warm Current region. Interannual changes in thermal conditions are responsible for the different occurrence (catch) rates of sized group of the fish. Changes in body size due to environmental variables lead the stock to be homogeneous during the period of high abundance, while one of the reminder cohorts supports the stock during the period of low level of abundance. Migration circuits of two cohorts of saury stock are hypothesized on the basis of short life span and spatio-temporal changes of the stock structure in normal environmental conditions. Changes in upper ocean structure and production cycles by the decadal scale climate changes lead changes in stock structure and recruitment, resulting in the fluctuation of saury abundance. Hypothesized mechanism of the effects of climate changes on stock structure and abundance is illustrated on the basis of changes in thermal regime and production cycle.

Effect of environmental conditions on the stock structure and abundance of the pacific saury, Cololabis saira in the Tsushima Warm Current region

  • Gong, Yeong;Suh, Young-Sang;Hur, Young-Hee
    • Proceedings of the Korean Aquaculture Society Conference
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    • 2004.05a
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    • pp.169-171
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    • 2004
  • Interannual and decadal scale body size of Pacific saury, catch and catch per unit effort were examined to investigate the environmental effects on the stock structure and abundance in the Tsushima Warm Current region. Interannual changes in thermal conditions are responsible for the different occurrence (catch) rates of sized group of the fish. Changes in body size due to environmental variables lead the stock to be homogeneous during the period of high abundance, while one of the reminder cohorts supports the stock during the period of low level of abundance. Migration circuits of two cohorts of saury stock are hypothesized on the basis of short life span and spatio-temporal changes in stock structure in normal environmental conditions. Changes in upper ocean structure and production cycles by the decadal scale climate changes lead changes in stock structure and recruitment, resulting in the fluctuation of saury abundance. Hypothesized mechanism of the effects of climate changes on the stock structure and abundance is illustrated on the basis of changes in thermal regime and production cycle.

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Design of 1-Kb eFuse OTP Memory IP with Reliability Considered

  • Kim, Jeong-Ho;Kim, Du-Hwi;Jin, Liyan;Ha, Pan-Bong;Kim, Young-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.2
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    • pp.88-94
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    • 2011
  • In this paper, we design a 1-kb OTP (Onetime programmable) memory IP in consideration of BCD process based EM (Electro-migration) and resistance variations of eFuse. We propose a method of precharging BL to VSS before activation of RWL (Read word-line) and an optimized design of read NMOS transistor to reduce read current through a non-programmed cell. Also, we propose a sensing margin test circuit with a variable pull-up load out of consideration for resistance variations of programmed eFuse. Peak current through the non-programmed eFuse is reduced from 728 ${\mu}A$ to 61 ${\mu}A$ when a simulation is done in the read mode. Furthermore, BL (Bit-line) sensing is possible even if sensed resistance of eFuse has fallen by about 9 $k{\Omega}$ in a wafer read test through a variable pull-up load resistance of BL S/A (Sense amplifier).

Ion Migration Failure Mechanism for Organic PCB under Biased HAST (고온고습 전압인가(Biased HAST) 시험에서 인쇄회로기판의 이온 마이그레이션 불량 메커니즘)

  • Huh, Seok-Hwan;Shin, An-Seob;Ham, Suk-Jin
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.1
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    • pp.43-49
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    • 2015
  • By the trends of electronic package to be smaller, thinner and more integrative, organic printed circuit board is required to be finer Cu trace pitch. This paper reports on a study of failure mechanism for PCB with fine Cu trace pitch using biased HAST. In weibull analysis of the biased HAST lifetime, it is found that the acceleration factor (AF) of between $135^{\circ}C/90%RH/3.3V$ and $130^{\circ}C/85%RH/3.3V$ is 2.079. A focused ion beam (FIB) was used to polish the cross sections to reveal details of the microstructure of the failure mode. It is found that $Cu_xO/Cu(OH)_2$ colloids and Cu dendrites were formed at anode (+) and at cathode (-), respectively. Thus, this gives the evidence that Cu dendrites formed at cathode by $Cu^{2+}$ ion migration lead to a short failure between a pair of Cu nets.

Effect of Applied Voltage Bias on Electrochemical Migration in Eutectic SnPb Solder Alloy

  • Lee, Shin-Bok;Jung, Ja-Young;Yoo, Young-Ran;Park, Young-Bae;Kim, Young-Sik;Joo, Young-Chang
    • Corrosion Science and Technology
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    • v.6 no.6
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    • pp.282-285
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    • 2007
  • Smaller size and higher integration of electronic systems make narrower interconnect pitch not only in chip-level but also in package-level. Moreover electronic systems are required to operate in harsher conditions, that is, higher current / voltage, elevated temperature / humidity, and complex chemical contaminants. Under these severe circumstances, electronic components respond to applied voltages by electrochemically ionization of metals and conducting filament forms between anode and cathode across a nonmetallic medium. This phenomenon is called as the electrochemical migration. Many kinds of metal (Cu, Ag, SnPb, Sn etc) using in electronic packages are failed by ECM. Eutectic SnPb which is used in various electronic packaging structures, that is, printed circuit boards, plastic-encapsulated packages, organic display panels, and tape chip carriers, chip-on-films etc. And the material for soldering (eutectic SnPb) using in electronic package easily makes insulation failure by ECM. In real PCB system, not only metals but also many chemical species are included. And these chemical species act as resources of contamination. Model test systems were developed to characterize the migration phenomena without contamination effect. The serpentine-shape pattern was developed for analyzing relationship of applied voltage bias and failure lifetime by the temperature / humidity biased(THB) test.

Design of an eFuse OTP Memory of 8bits Based on a Generic Process ($0.18{\mu}m$ Generic 공정 기반의 8비트 eFuse OTP Memory 설계)

  • Jang, Ji-Hye;Kim, Kwang-Il;Jeon, Hwang-Gon;Ha, Pan-Bong;Kim, Young-Hee
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2011.05a
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    • pp.687-691
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    • 2011
  • In this paper, we design an 8-bit eSuse OTP (one-time programmable) memory in consideration of EM (electro-migration) and eFuse resistance variation based on a $0.18{\mu}m$ generic process, which is used for an analog trimming application. First, we use an external program voltage to increase the program power applied an eFuse. Secondly, we apply a scheme of precharging BL to VSS prior to RWL (read word line) activation and optimize read NMOS transistors to reduce the read current flowing through a non-programmed cell. Thirdly, we design a sensing margin test circuit with a variable pull-up load out of consideration for the eFuse resistance variation of a programmed eFuse. Finally, we increase program yield of eFuse OTP memory by splitting the length of an eFuse link.

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Deign of Small-Area Differential Paired eFuse OTP Memory for Power ICs (Power IC용 저면적 Differential Paired eFuse OTP 메모리 설계)

  • Park, Heon;Lee, Seung-Hoon;Jin, Kyo-Hong;Ha, Pan-Bong;Kim, Young-Hee
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.8 no.2
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    • pp.107-115
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    • 2015
  • In this paper, a small-area 32-bit differential paired eFuse OTP memory for power ICs is designed. In case of smaller number of rows than that of columns for the OTP memory cell array, a scheme for the cell array reducing the number of SL driver circuits requiring their larger layout areas by routing the SL (source line) lines supplying programming currents for eFuse links in the row direction instead of the column direction as well as a core circuit is proposed. In addition, to solve a failure of being blown for non-blown eFuse links by the electro-migration phenomenon, a regulated voltage of V2V ($=2V{\pm}0.2V$) is used to a RWL (read word line) driver circuit and a BL (bit line) pull-up driver circuit. The layout size of the designed 32-bit eFuse OTP memory is $228.525{\mu}m{\times}105.435{\mu}m$, which is confirmed to be 20.7% smaller than that of the counterpart using the conventional cell array routing, namely $197.485{\mu}m{\times}153.715{\mu}m$.