• Journal of Biosystems Engineering
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• 제40권3호
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• pp.224-231
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• 2015

Purpose: Corn is a major commercial crop targeted for genetic modification owing to its high consumer demand as a foodstuff for humans and livestock, as well as its other industrial applications. However, the safety of genetically modified (GM) crops is controversial. Indeed, several countries have banned the importation of GM seeds that can germinate. Therefore, development of effective, convenient, and nondestructive methods to inhibit seed germination is required. Methods: This study aimed to examine the efficacy of microwave heat treatment for inhibition of germination of corn kernels and for optimization of power and exposure time required for effective aging treatment. Artificial inhibition was induced in corn kernels using microwave heat treatment. Seven power levels were examined (400, 500, 600, 700, 800, 900, and 1000 W) at each of the four exposure times (0.5, 1.0, 1.5, and 2.0 min). Results: Corn kernels could be aged effectively after heating for 0.5~1.0 min at powers greater than 800 W, with increasing efficacy observed at higher powers. Further analysis showed that the most effective inhibition of germination was observed at 1000 W for 40 s. This setting did not cause any physical damage to the corn kernels. Conclusions: Optimal inhibition of corn kernel germination was achieved using higher power for shorter times, which may be useful for industrial corn seed treatment.

• 방사성폐기물학회지
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• 제2권4호
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• pp.231-238
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• 2004

원자력 발전소에서 발생하는 고체 방사성 폐기물인 이온교환수지, 제올라이트, 활성탄 및 슬러지 에 포함된 성분 원소 분석을 위한 산분해 조건을 확립하였다. 방사성 폐기물의 분해 에는 흔합산을 이용한 밀폐형 극초단파 산분해법을 사용하였으며, 제안한 방법에 따른 산분해 후의 용액은 맑고 색이 없는 투명한 상태임을 확인할 수 있었다. 또한, 산분해 과정을 거친 각각의 용액 시료는 ICP-AES와 AAS를 사용하여 분석하였고, 모의 방사성 폐기물에 첨가한 5종의 금속 원소들은 $94{\%}$ 이상의 높은 회수율을 보여주었다. 화학적 특성을 고려하여 제안된 산분해 조건에 의해 용액화된 중${\cdot}$저준위 방사성 폐기물의 성분 원소 분석은 최적의 유리화 기술 개발을 위한 기초 자료로 유용하게 사용될 수 있을 것으로 판단된다.

• 한국세라믹학회지
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• 제35권8호
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• pp.775-782
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• 1998

This experiment is third study concerning BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} (Ln=Sm, Nd, Pr, La..) system which is known to show a high dielectric constant and Q value in microwave dielectric materials. The process of cry-stallization and the microwave dielectric properties of the specimens sintered at 1220-140$0^{\circ}C$ for 2 hr was investigated in the BaO-(Na,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} as well as BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system. The single phase BaPr2Ti5O14 and Ba(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}Ti5O14 was finally formed from the Pr2Ti2O7 (Nd, Pr)2Ti2O7 as a secondary phase in the BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} and BaO-(Nd, {{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system respectively The dielectric constant of the specimens sint-ered at 1280~131$0^{\circ}C$ showed the maximum value as 105(BaO-{{{{ { { Pr}_{ 2} O}_{3 } }}-{{{{ { TiO}_{2 } }} system) and 88 (BaO-(Nd,{{{{ { { Pr})_{2 }O }_{3 } }}-{{{{ { TiO}_{2 } }} system) and the Q values of them showed higher value than 1800 which are due to the maximum den-sity. However the dielectric properties of the specimens sintered at higher temperature than 131$0^{\circ}C$ were reduced due to the increases of pore which were resulted from the sudden grain growth.

• 한국정보통신학회논문지
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• 제16권5호
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• pp.1023-1028
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• 2012

본 논문에서는 비접촉 마이크로웨이브 프루브 시스템의 I/Q demodulator를 위한 MMIC (Monolithic Microwave Integrated Circuit) mixer chip을 GaAs p-HEMT 공정의 Schottky 다이오드를 이용하여 설계 및 제작하였다. 프루브 시스템의 I/Q demodulator 구조를 단순화하기 위해 single balanced 구조의 mixer를 채택하였다. Single balanced mixer에서 $90^{\circ}$hybrid coupler와 ${\lambda}/4$ 전송선로를 이용하여 $180^{\circ}$hybrid를 설계하였으며 이를 MIM 커패시터와 spiral 인덕터를 이용하여 구현함으로써 mixer chip의 크기를 줄일 수 있었다. On-wafer 측정 결과, 본 논문의 MMIC mixer는 1650MHz ~ 2050MHz의 RF 및 LO 주파수 대역을 포함하고 있으며, 응용 주파수 대역 내에서 RF 및 LO의 변화에 대해 약 12dB 이하의 평탄한 변환손실(conversion loss) 특성을 나타내었다. 또한, MMIC mixer chip은 $2.5mm{\times}1.7mm$의 초소형 크기를 가지며 LO-IF 및 RF-IF의 격리도는 각각 43dB 및 23dB 이상의 특성을 나타내었다.

• 공업화학
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• 제29권6호
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• pp.703-709
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• 2018

마이크로웨이브에 감응하는 주요물질인 Li와 Zn계 전구체를 다양한 조건별로 혼합 및 열처리하여 유전발열소재(dielectric heating materials)를 제조하였다. 제조된 발열소재의 표면 형태 등의 변화를 SEM 분석으로 확인하였으며 기공구조, 열처리 단계 그리고 표면에 형성되어 있는 $Li_5Fe_5O_8$ 물질이 발열성능에 주요한 영향인자임을 확인하였다. 또한 슬러지 건조 장치에 발열소재가 적용되었을 경우와 그렇지 않은 경우 25%의 함수율을 갖는 슬러지가 각각 6.34%, 15.22%로 건조되어 슬러지 수분 제거효율이 58.34% 상승하였음을 확인하였다. 이에 따라 발열소재가 마이크로웨이브 건조 공정의 성능 및 효율에 직접적인 영향을 미칠 수 있음을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.124-124
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• 2009

We observed the changes of crystal structure of Rubrene (5,6,11,12-tetraphenylnaphthacene) polycrystal thin films at various in situ substrate temperature and process by scanning electron microscope(SEM), x-ray diffraction (XRD) and near-field microwave microprobe (NFMM). Amorphous rubrene thin film was initially obtained on 200 nm thick $SiO_2/Si$ substrate at 35 $^{\circ}C$ in a vacuum evaporation but in situ long time postannealing at the temperature 80 $^{\circ}C$ transformed the amorphous phase into crystalline. Four heating conditions are followed : (a) preheating (b) annealing (c) preheating, annealing (d) preheating, cooling(35 $^{\circ}C$), annealing. We have obtained the largest polycrystal disk in sample (c). But the highest crytallity and conductivity of the rubrene thin films were obtained in sample (d).

• The Korean Journal of Ceramics
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• 제2권4호
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• pp.197-202
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• 1996

The highly oriented diamond particles were deposited on the mirror-polished (100) silicon substrates in the bell-jar type microwave plasma deposition system using a three-step process consisting if carburization, bias-enhanced nucleation and growth. By adjusting the geometry of the substrate and substrate holder, very dense disc-shaped plasma was formed over the substrate when the bias voltage was below -200V. Almsot perfectly oriented diamond films were obtained only in this dense disc-shaped plasma. From the results of the optical emission spectra of the dense disc-shaped plasma, it was found that the concentrations of atomic hydrogen and hydrocarbon radical were increased with negative bias voltage. It was also found that the highly oriented diamonds were deposited in the region, where the intensity ratios of carbonaceous species to atomic hydrogen are saturated.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 추계학술대회
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• pp.864-869
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• 2004

It is net easy to predict the shrinkage rate of a plastic injection mold in its design process. The shrinkage rate should be considered as one of the important performances to produce the reliable products. The shrinkage rate can be determined by suing the CAE tools in the design produces. However, since the analysis can take minutes to hours, the high computational costs of performing the analysis limit their use in design optimization. In this study, the surrogate models based on the DACE is used in lien of the original models, facilitating design optimization.

• Environmental Engineering Research
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• 제14권1호
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• pp.48-52
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• 2009

Solubilization of sewage sludge creates favorable conditions for anaerobic microorganisms to produce biogas. In this paper, we quantify the effect of heating pretreatment on the degree of solubilization of sewage sludge. The pretreatment process was carried out using a lab-scale industrial microwave unit (2450 MHz frequency). Response surface analysis was applied to determine the combination of temperature-increase rate (ramp rate) (2.9 to 17.1 ${^{\circ}C}$/min) and terminal temperature (52 to 108${^{\circ}C}$). Both ramp rate and temperature significantly affected the solubilization degree of sludge. Within the design boundaries, the conditions predicted to maximize the solubilization degree of 15.8% were determined to be 2.9 ${^{\circ}C}$/min and 104${^{\circ}C}$.

• 전기학회논문지
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• 제61권4호
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• pp.585-589
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• 2012

The characteristics of interface layer and the effect of mole fraction of inlet gas mixture($B_2H_6/H_2/N_2/TiCl_4$) on the microstructure of Ti(B,N) films were studied by microwave plasma hot filament CVD process. Ti(B,N) films were deposited on a substrate(STD-61) to develop a high performance of resistance wear coating tool. Ti(B,N) films were obtained at a gas pressure of 1 torr, bias voltage of 300 V and substrate temperature of $480^{\circ}C$ in $B_2H_6/H_2/N_2/TiCl_4$gas system. It was found that TiN, $TiB_2$, TiB and hexagonal boron nitride(h-BN) phases exist in thin layer on the STD-61.