• 센서학회지
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• 제12권4호
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• pp.185-190
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• 2003

최근 적외선이나 초음파, 전자기파 등을 이용해 자연의 신호를 검출해 내는 센서들이 여러 가지 응용분야에서 널리 사용되고 있다. 더욱이 어떤 대상물이 가지고 있는 정보를 감지하는 고성능의 단일센서뿐만 아니라 이를 시스템적으로 개발하고 응용하는 것의 필요성도 높아져 왔다. 본 논문에서는 마이크로파를 이용한 레이더 센서 시스템을 설명하였고, 그 중 CW (Continuous Wave) 도플러 레이더를 이용한 마이크로파 센서 시스템의 동작 및 응용을 살펴보았다. 또한 이러한 시스템에 사용될 수 있는 고안정 주파수원으로 유전체 공진 발진기를 설계 제작하여 상용 시스템으로의 적용 가능성을 보였다. 제작된 유전체 공진 발진기는 12.67 GHz에서 동작하고, 출력전력이 +5.33 dBm 위상잡음은 100 kHz 옵셋주파수에서 -108.5 dBc/Hz를 얻었다.

• 대한전기학회논문지
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• 제43권4호
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• pp.613-619
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• 1994

Dielectric properties of Ba(ZnS11/3TTaS12/3T)OS13T+x ZnO(x=0, 0.4, 0.8, 1.0 wt%) ceramics have been investigated at microwave frequencies. With excess ZnO, the sinterability was improved and the dielectric constant($\varepsilon$S1rT) and the unloaded quality factor(QS1UT) were increased. The structure changed into hexagonal from pseudocubic as being annealed at 140$0^{\circ}C$ in excess ZnO composition. Also, the temperature coefficient of the resonant frequency ($\tau$S1fT) turned into (-)ppm/$^{\circ}C$ when sintered at 155$0^{\circ}C$ for 2 hours. But the specimen sintered in ZnO muffling showed increased density and $\varepsilon$S1rT but lowerde QS1uT. Among the specimen investigated, expecially the composition added with 0.4wt% excess ZnO showed the most optimum dielectric values ($\varepsilon$S1rT=28, QS1uT x f=120000GHz) better than those of original Ba(ZnS11/2T TaS12/3T)OS13T ceramics.

• 한국세라믹학회지
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• 제34권8호
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• pp.843-853
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• 1997

The effect of dopant on microwave dielectric properties of (1-x)MgTiO3-xCaTiO3 ceramics, known to be used as microwave dielectric resonators for global positioning system and personal communication system, has been analyzed in terms of variations in defect concentrations and microstructural features with its addition. The addition of dopants was revealed to result in a significant change in the microstructure as well as defect concentration of the ceramics. For instance, the quality factor is proportional to sintered density of the ceramics by inversely proportional to grain size as well as vacancy concentration. Accordingly, it is believed that the dopant effect on the microwave dielectric properties should be separately analyzed with either microstructural change or the change in vacancy concentration.

• 대한전기학회논문지
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• 제43권3호
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• pp.442-446
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• 1994

In this study, microwave dielectric properties of 0.182BaO-0.818TiOS12T ceramics were investigated with sintering temperature and annealing time, and the application for the microwave dielectric resonator was studied. In the specimen simtered at 1400[$^{\circ}C$], dielectric constant, unloaded Q and temperature coefficient of resonant frequency had good values of 35.36, 5692, -4.43[ppm/$^{\circ}C$], respectively. The specimen which temperature coefficient of resonant frequency($\tau$f) was vared positive to negative value was selected, thereafter microwave dielctric properties was investigated with annealing time(0~4[hr]) in the fixed annealing temperature of 1350[$^{\circ}C$]. Increasing the annealing time, dielectric constant and unloaded Q were increased and temperature coefficient of resonant frequency was decreased.

• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.532-537
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• 2005

In order to develop a tunable resonator which can be easily operated by DC bias and applied for microwave tunable filters and devices using ferroelectric thin or thick films, the non conductor backed-and conductor backed- coplanar stripline resonators have been designed and analyzed. They have been designed to be operated at 25 GHz which involve coplanar stripline input and output ports. The resonators have been simulated and analyzed using Ansoft HFSS. The research has been focused on the Quality factor of the coplanar stripline resonator. The conductor Q, box Q, and radiation Q of the resonators have been analyzed and calculated according to the substrate thickness & conductor width of the resonators. From these parameters, the loss factors of the coplanar stripline resonator have been investigated. The conducting Q of the coplanar stripline resonator has no relation with the thickness of dielectric substrate and increases as the conductor width increases. The box Q has no much relation with the thickness of substrate and the conductor width, which is above 2000. The radiation loss increases as the thickness of substrate and the conductor width increase. To decrease the radiation loss of the coplanar stripline resonator, a conductor backed coplanar stripline resonator has been proposed which has the unloaded Q of 170.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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• pp.761-763
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• 2004

최근에 위성용 필터로서 유전체 공진기 내장 도파관 필터가 많이 연구되고 있다. 이 필터의 튜닝을 위하여 튜닝 스크류가 일반적으로 사용되어져 왔는데 튜닝 스크류의 사용은 복잡한 필터의 튜닝 시 너무 소모적인 작업을 야기시키고 미세한 튜닝에 어려움이 있어서 다른 해결책을 필요로 한다. 또한 제품의 사용 시에는 온도등의 외부환경의 변화에 대하여 대처를 하기 위하여 전기적인 튜닝을 이용한 튜닝의 자동화에 대한 필요성이 대두되었다. 이에 대한 해결책으로 BST($Ba_xSr_{1-x}TiO_3$)라는 강유전체를 이용하는 튜닝에 대하여 소개하고 한 경우에 대하여 FDTD 방시의 EM 시뮬레이션을 구하여 그 결과로서 전기저인 필터 튜닝의 가능성을 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.64-67
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• 1997

Microwave dielectric properties of A1$_2$O$_3$ ceramics resonator were investigated with impurity addition. Increasing the contents of Bi$_2$O$_3$Q-value and Q $\times$ f were increased. In the specimen with the content of Bi$_2$O$_3$(0.3wt%), dielectric constant, quality factor and temperature coefficient of resonant frequency(TCRF, $\tau$$_{f}$) had a good values of 10.76,23,253(at 9.68[GHz]) and -39.09(ppm/$^{\circ}C$), respectively. The TCRF value was decreased with MnO$_2$ and increased with Sm$_2$O$_3$. La$_2$O$_3$.>.

• 대한전기학회논문지
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• 제45권1호
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• pp.81-85
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• 1996

Microwave dielectric properties of 0.15(B $a_{x}$S $r_{0.05}$)O-0.15(S $m_{2}$(1-y)N $d_{2y}$) $O_{3}$-0.7Ti $o_{2}$(x=o.9~0.1[mol.], y=6[m/o]) ceramics were investigated with BaO compositional ratio. Sintered density and resistivity of specimens were independent on the BaO compositional ratio. In the specimen with x=0.975[mol.], dielectric constant, quality factor and temperature coefficient of resonant frequency had good values of 76.52, 3001(at 3[GHz]) and +0.71[ppm/.ceg. C], respectively. By comparing with the stoichiometric compositions of 78.14, 2938(at 3[GHz])+14.19[ppm/.ceg. C], dielectric constant and quality factor showed similar properties, but the temperature coefficient of resonant frequency was highly improved. (author). refs., figs., tabs.s.s.

• 대한전자공학회논문지SD
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• 제44권12호
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• pp.7-11
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• 2007

본 논문에서는 MMIC 응용을 위한 dielectric-supported air-gapped microstrip line (DAML) 구조를 이용하여 dual-mode stepped impedance 링 공진기를 설계 제작하였다. 링 공진기는 표면 마이크로머시닝 기술을 이용하여 만들어졌다. DAML ring resonator는 다층구조로써 공기중에 위치한 신호선과 MMIC 응용에 적합하도록 CPW가 한 평면에 구성되 있으며 DAML-CPW 트랜지션이 자유로운게 특징이다. DAML 링 공진기는 $10{\mu}m$ 높이로 GaAs 기판 으로부터 띄어져 있다. 대역통과 여파기는 dual-mode 공진을 하며 stepped impedance 이용한 구조이다. 측정결과로 중심주파수 97 GHz에선 감쇠특성은 15 dB, 삽입손실은 2.65 dB를 보였으며, 상대 대역폭은 12 %를 나타냈다. 이같은 구조의 대역통과 여파기는 MMIC 와의 직접화에 유리하다.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.75-82
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• 1999

TE$_{01\;{\delta}}$ mode Cavity Resonators with a low loss dielectric rod and YBa$_2Cu_3O_{7-{\delta}}$ (YBCO) endplates were prepared and their microwave properties were studied at temperatures above 30 K. Both sapphire and rutile were used as the dielectrics. The TE$_{01\;{\delta}}$ mode Q$_0$ of the resonator, designed to work as a tunable resonator with variations in the gap distance (s) between the dielectric rod and the top YBCO, was more than 1000000 at s = 0 mm and at 30 K and .the resonant frequency of 19.56GHz when a sapphire rod was used for the dielectric. The TE$_2Cu_3O_{7-{\delta}}$ mode resonant frequency (f$_0$) appeared to decrease as the temperature is raised. Meanwhile, the temperature dependence of the TE$_2Cu_3O_{7-{\delta}}$ mode f$_0$ of the rutile-loaded resonator appeared different with f$_0$ increasing according to the temperature and Q$_0$ more than 300000 at 30 K and f$_0$ = 8.56 CHz. Comparisons were made between the microwave properties of the sapphire-loaded and the rutile-loaded resonators. Also, applications of the TE$_2Cu_3O_{7-{\delta}}$ mode cavity resonator for a tunable resonator with a very high Q$_0$ as · well as a characterization tool for surface resistance measurements of HTS films are described.