• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.749-751
• /
• 2002

$(Pb_{1-x}Sr_x)TiO_3$ $(0.6{\leq}x{\leq}0.8)$ thin films were prepared by the MOD method for tunable microwave device application and their characteristics were investigated as a function of Sr content(x) and applied field. Thin films showed a homogeneous microstructure and the tetragonality(c/a) was slightly decreased with increasing Sr content. With increasing Sr content, Curie temperature of the thin films showed a decreasing tendency. For the PST thin films, the dielectric constant at room temperature, Tc, and $tan{\delta}$ were 750~1900, $-70^{\circ}{\sim}-30^{\circ}C$ and 0.025~0.04, respectively.

• Journal of Korean Vacuum Science & Technology
• /
• 제3권1호
• /
• pp.59-65
• /
• 1999

There has been an interest to develop an efficient, compact microwave device using field-emitter-arrays (FEA)-based cathode. Toe valuate the optimum device-efficiency in a compact size, the propagation properties of the premodulated electron beam for the FEA-based cathode is studied in detail by the computer simulation using a PIC code, MAGIC. For the premodulated electron beam whose phase of the energy leads the phase of the current by $\pi$/2, the amplitude of the downstream current modulation can be kept as high as the initial modulation level. Using the beam parameters with the beam voltage of 6kV and the current of 2.0A, 30% of efficiency is predicted when the quality factor of 800 is chosen. the device length is reduced about twice compared with that of the conventional device. The design of practical planar cathode is carried out to meet the minimum diameter of the electron beam as 0.5 mm.

• Journal of electromagnetic engineering and science
• /
• 제2권2호
• /
• pp.81-86
• /
• 2002

This paper presents the full wave analysis of microwave circuits with nonlinear device using the finite difference time domain method. The equivalent current source is used to model nonlinear device and all the electric field components at the nonlinear device are updated by FDTD algorithm. The currents and voltages of nonlinear device are calculated by the state equations and iteration method. To validate the proposed method, the S-parameters of NEC NE72089 MESFET in various conditions are analyzed and the results are compared with those of the ADS. The proposed method is applied to the analysis of a microwave amplifier, which includes NEC NE72089 MESFET. The analysis results obtained by the present method show good agreement with those of the ADS.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권9호
• /
• pp.900-905
• /
• 1996

We have investigated dielectric properties of low fired ceramics BiNbO$_{4}$ containing 0.05[wt%] V$_{2}$O$_{5}$ and x[wt%l Cr$_{2}$O$_{3}$ (x=0, 0.2, 0.4, 0.8, 1.2). By substituting Cr for Bi, dielectric constant .epsilon.$_{r}$ and quality factor Q.f increased and temperature coefficient of resonant frecquency .tau.$_{f}$ changed to positive value. In the composition of BiNbO$_{4}$+0.05 [Wt%] V$_{2}$O$_{5}$+0.8[wt%]Cr$_{2}$O$_{3}$ sintered at 960[.deg. C], we could obtain microwave dielectric properties of .epsilon.$_{r}$=49, Q.f.simeq.3000[GHz](at 4.8[GHz]), .tau.$_{f}$.simeq.0[ppm/.deg. C]. As the above ceramics can be sintered near 960[.deg. C], it is applicable to multilayer microwave device with Ag conductor.tor.tor.tor.

• Nuclear Engineering and Technology
• /
• 제54권7호
• /
• pp.2606-2613
• /
• 2022

Spent resin often exceeds radiation limits for safe disposal, creating a need for commercial-scale treatment techniques to reduce resin radioactivity. In this study, the radiological safety of a commercialized spent resin treatment device with a treatment capacity of 1 ton/day was evaluated. The results confirm that the device is radiologically safe in the event of an accident. This device desorbs ¹⁴C from the spent resin, allowing disposal as low-level waste instead of intermediate-level waste. The device also reduces overall waste by recycling the extracted ¹⁴C. Potential accident scenarios were explored to enable dose assessments for both internal and external exposure while preventing further spillage of the device and processing the spilled resin. The scenarios involved the development of a surface fracture on the resin mixture separator and microwave systems, which were operated under pressure and temperature of 0-6 bar and 0-150 ℃, respectively. In the case of accidents with separator and microwave device, the maximum allowable working time of worker were derived, respectively, considering external and internal exposures. When wearing the respirator corresponding to APF 50, in the case of the microwave device accident scenario, the radiological safety was confirmed when the maximum worker worked within 132.1 h.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
• /
• pp.78-81
• /
• 2002

Ferroelectric thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. Thin films of $Pb_{x}Sr_{1-x}TiO3(PST)$ were fabricated onto Pt/Ti/SiO2/Si substrate by the sol-gel method. We have investigated the structural and dielectric properties of PST(50/50) thin films for tunable microwave device applications. The PST thin films show typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films are strongly dependent on annealing temperature. The dielectric constants, loss and tunability of the PST (50/50) thin films were 404, 0.023 and 51.73 %, respectively.

• 마이크로전자및패키징학회지
• /
• 제14권4호
• /
• pp.43-48
• /
• 2007

LTCC 기판제작에 있어서 Post 전극형성은 실제 IC 및 수동부품을 탑재하는 Pad 형성 부분으로 전극 표면의 특성에 큰 영향을 미치게 된다. 본 연구에서는 일반적인 전기로를 이용한 post 전극 소성시 발생되는 문제점들 개선하여 마이크로파 소결을 통한 전극 미세 구조의 치밀화 및 이에 따른 신뢰성 기초 평가를 진행하였다. 일반적인 전기로와 마이크로파 소결 조건에 따른 전극과 LTCC 세라믹 상태를 평가하였다. 또한 과소성 및 탈바인더 공정시 Out gas 불충분에 의한 전극 부풀림 현상을 개선할 수 있는 효과를 얻을 수 있었으며 실제 solder ball 형성후 실장형 전극의 고착강도를 측정한 결과 기존 전기로에 비해서 30% 고착강도가 증가 하였다. 또한 소결시간을 기존 전기로 10시간에 비해 30분 정도에서 소결 공정이 이루어지므로 95%정도 시간을 단축시킬 수 있음을 확인하였다. 이는 소성로 설계를 통한 양산성, 효율성에 크게 증대되리라 예상된다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.268-268
• /
• 2012

Atmospheric pressure microwave induced plasmas are used to excite and ionize chemical species for elemental analysis, for plasma reforming, and for plasma surface treatment. Microwave plasma differs significantly from other plasmas and has several interesting properties. For example, the electron density is higher in microwave plasma than in radio-frequency (RF) or direct current (DC) plasma. Several types of radical species with high density are generated under high electron density, so the reactivity of microwave plasma is expected to be very high [1]. Therefore, useful applications of atmospheric pressure microwave plasmas are expected. The surface characteristics of SUS304 stainless steel are investigated before and after surface modification by microwave plasma under atmospheric pressure conditions. The plasma device was operated by power sources with microwave frequency. We used a device based on a coaxial transmission line resonator (CTLR). The atmospheric pressure plasma jet (APPJ) in the case of microwave frequency (880 MHz) used Ar as plasma gas [2]. Typical microwave Pw was 3-10 W. To determine the optimal processing conditions, the surface treatment experiments were performed using various values of Pw (3-10 W), treatment time (5-120 s), and ratios of mixture gas (hydrogen peroxide). Torch-to-sample distance was fixed at the plasma edge point. Plasma treatment of a stainless steel plate significantly affected the wettability, contact angle (CA), and free energy (mJ/$m^2$) of the SUS304 surface. CA and ${\gamma}$ were analyzed. The optimal surface modification parameters to modify were a power of 10 W, a treatment time of 45 s, and a hydrogen peroxide content of 0.6 wt% [3]. Under these processing conditions, a CA of just $9.8^{\circ}$ was obtained. As CA decreased, wettability increased; i.e. the surface changed from hydrophobic to hydrophilic. From these results, 10 W power and 45 s treatment time are the best values to minimize CA and maximize ${\gamma}$.

• 한국전기전자재료학회논문지
• /
• 제27권2호
• /
• pp.81-84
• /
• 2014

The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on $HfO_2$ thin films have been demonstrated by using Ag/$HfO_2$/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with $HfO_2$ thin films as a transition layer. Compared to the as-deposited Ag/$HfO_2$/Pt device, highly improved uniformity characteristics of resistance values and operating voltages were obtained from the MWI treatment Ag/$HfO_2$/Pt ReRAM device. In addition, a stable DC endurance (> 100 cycles) and a high data retention (> $10^4$ sec) were achieved.

• 한국초전도ㆍ저온공학회논문지
• /
• 제16권4호
• /
• pp.40-43
• /
• 2014

Quantum information processing using superconducting qubit based on Josephson junction has become one of the most promising candidates for possible realization of a quantum computer. In the heart of the qubit circuits, the superconducting microwave resonator plays a key role in quantum operations and measurements, which enables single-photon level microwave quantum optics. During last decade, the coherence time, or the lifetime of the quantum state, of the superconducting qubit has been dramatically improved. Among several technological innovations, the improvement of superconducting microwave resonator's quality has been the main driving force in getting the qubit performance almost ready for elementary quantum computing architecture. In this paper, I will briefly review very recent progresses of the superconducting microwave resonators especially aimed for quantum device applications during the last decade. The progresses have been driven by ingenious circuit design, material improvement, and new measurement techniques. Even a rather radical idea of three-dimensional large resonators have been successfully implemented in a qubit circuit. All those efforts contributed to our understanding of the qubit decoherence mechanism and as a result to the improvement of qubit performance.