• Proceedings of the KIEE Conference
• /
• 1995.07c
• /
• pp.1016-1018
• /
• 1995

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05b
• /
• pp.78-81
• /
• 2002

Ferroelectric thin film is a very attractive material for the tunable microwave device applications such as electronically tunable mixers, delay lines, filters and phase shifters. Thin films of $Pb_{x}Sr_{1-x}TiO3(PST)$ were fabricated onto Pt/Ti/SiO2/Si substrate by the sol-gel method. We have investigated the structural and dielectric properties of PST(50/50) thin films for tunable microwave device applications. The PST thin films show typical polycrystalline structure with a dense microstructure without secondary phase formation. Dielectric properties of PST films are strongly dependent on annealing temperature. The dielectric constants, loss and tunability of the PST (50/50) thin films were 404, 0.023 and 51.73 %, respectively.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.161.1-161.1
• /
• 2007

• Nuclear Engineering and Technology
• /
• v.48 no.5
• /
• pp.1219-1229
• /
• 2016

The present paper reports on a trial to shed further light on the characterization, applications, and operation of radar speed guns or Gunn diodes on different radiation environments of neutron or g fields. To this end, theoretical and experimental investigations of microwave oscillating system for outer-space applications were carried out. Radiation effects on the transient parameters and electrical properties of the proposed devices have been studied in detail with the application of computer programming. Also, the oscillation parameters, power characteristics, and bias current were plotted under the influence of different ${\gamma}$ and neutron irradiation levels. Finally, shelf or oven annealing processes were shown to be satisfactory techniques to recover the initial characteristics of the irradiated devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.1074-1078
• /
• 2004

열 중착 방법을 이용하여 copper(II)-phthalocyanine(CuPc) 박막을 glass 기판 위에 제작하였다. 박막은 열처리를 하지 않은 경우와 열처리 조건을 $150^{\circ}C$ 로 후열(annealing) 처리 하는 방식으로 하였으며 후열 처리한 경우 $150^{\circ}C$에서의 열처리 지속 시간을 각각 2시간, 3시간, 4시간으로 달리하였다. 제작된 박막의 전기전도도를 평가하기 위해 마이크로파의 근접장 효과를 이용한 근접장 현미경(near-field scanning microwave microscope)을 이용하여 비파괴적인 방식으로 CuPc 박막의 반사계수(reflection coefficient)를 측정하였다. CuPc 박막의 전기전도도 특성을 UV 흡수도를 통한 HOMO(highest occupied molecular orbital), LUMO(lowest unoccupied molecular orbital) 준위의 밴드갭의 shift 현상과 관련지어 설명하였다. 박막 표면 특성은 SEM(scanning microscope microscopy)을 통해 관측하였다. 열처리 지속 시간에 따른 CuPc 박막의 전기전도도 특성은 2시간으로 지속한 경우의 박막의 경우 가장 좋았으며 그 보다 더 오랜 시간 동안 열처리를 지속한 경우에는 전기 전도 특성이 오히려 나빠짐을 알 수 있었다.

• Korean Journal of Materials Research
• /
• v.7 no.3
• /
• pp.251-264
• /
• 1997

공진 주파수 온도 계수($\tau$$_{f}$)가 큰 음의 값을 가지는 (Li$_{1}$2Nd$_{1}$2)TiO$_{3}$(LNT) 고주파 유전체를 125$0^{\circ}C$에서 140$0^{\circ}C$까지의 온도에서 2시간동안 소결을 하였고 소결후에는 소결온도보다 약간 낮은 120$0^{\circ}C$에서 5시간 동안 annealing을 실시를 하였다. 그리고 열처리에 의한 상, 미세구조의 변화를 X-ray, SEM을 통해서 분석하였으며, 열처리가 고주파 유전물성에 대해 미치는 영향에 대해서도 고찰하였다. 130$0^{\circ}C$에서 135$0^{\circ}C$ 근방에서 소결시킨 재료는 Annealing효과에 의해 소결체에 균일한 입도 분포가 증진되었고 체적 밀도가 향상되었으며, 열처리 효과에 의해 품질계수(Q)값이 향상되었고 유전상수($\varepsilon$$_{r}$)는 약간 감소하였으며 공진주파수 온도계수($\tau$$_{f}$)는 더 큰 음의 값을 가지게 되었다. 그러나 135$0^{\circ}C$이상에서 소결한 경우에는 비정상적인 입자 성장에 의해 밀도가 감소되며, 이에 따라 고주파 유전특성이 전반적으로 저하되었다.었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.05a
• /
• pp.132-136
• /
• 2004

열 증착 방법을 이용하여 copper(II)-phthalocyanine(CuPc) 박막을 glass 기판 위에 제작하였다. 열처리 조건은 $150^{\circ}C$에서 후열(annealing) 처리 하는 방식과 예열하는 두 가지 방식으로 달리하였다. 제작된 박막의 전기전도도를 평가하기 위해 마이크로웨이브 근접장 효과를 이용한 근접장 현미경(near-field scanning microwave microscope)을 이용하여 비파괴적인 방식으로 CuPc 박막의 반사계수(reflection coefficient)를 측정하였다. CuPc 박막의 전기전도도 특성을 UV 흡수도를 통한 에너지 밴드갭의 shift 현상과 관련지어 설명하고 또한 x-ray diffraction(XRD) data를 통해 박막의 결정 특성과 비교하였다. 박막 표면 특성은 SEM(scanning microscope microscopy)을 통해 관측하였다. 열처리 조건에 따른 CuPc 박막의 전기전도도 특성은 후열 처리한 박막의 경우 예열 처리한 박막보다 전기 전도 특성이 향상되었음을 관측할 수 있었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.1
• /
• pp.53-60
• /
• 2009

$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.

• Journal of the Korean Magnetics Society
• /
• v.11 no.3
• /
• pp.109-113
• /
• 2001

Presently, an inductor adapted at MMIC (Monolithic Microwave Integrated Circuit) which is used for cellular phone or PHS operates at quasi-microwave range over 800 MHz. However, a W-CDMA (Wideband Code Division Multiple Access) will use about 2 GHz range. Therefore magnetic film device should be compatible up to 2 GHz. We have deposited Co-Pd-Al-O system film using rf sputtering method which is expected up to 2 GHz, and investigated the effect of Pd content and magnetic field annealing. When Pd composition is 19%, Hk was 118 Oe, and ${\mu}$′showed flat frequency characteristics up to 1.5 GHz. The Q factor (=${\mu}$′/${\mu}$") was 23.3 at 1 GHz, 6.7 at 1.5 GHz and 1.5 at 2 GHz, respectively. Resonance frequency was 2 GHz. Therefore Co-Pd-Al-O thin film could be used at over 1 GHz, and also expected as an inductor material for wide band CDMA type cellular phone.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.8 no.4
• /
• pp.587-591
• /
• 1998

AZO transparent conducting thin film were fabricated by DC magnetron sputtering using the Zn: Al (2% aluminu contained ) alloy target with inducing microwave to the plasma, and the effect of microwave was studied. The optical transmittance, the resistivity and dynamic deposition rate at the applied voltage to target of 420 V was 50~70%, $ 5.5{\times}10^{-3}{\Omega}$cm and 6,000 $\AA\textrm{mm}^2$/J, respectively. After annealing AZO coated glass at $400^{\circ}C$ for 30 minutes, the light transmittance was increased to 80% and electrical conductivity was also increased two times, reached to resistivity of $2.0{\times}10^{-3}{\Omega}$cm.