• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.451-454
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• 2002

In this paper, a low-noise amplifier is designed and fabricated using the HJFET for the reception of the Ku-band satellite broadcast signals. The optimum input and output reflection coefficients of each amplifier stage are obtained by the trade-off between the stable gain and the noise figure circle. The amplifier performance is simulated and optimized using a microwave CAD software. The designed amplifier is fabricated and tested. Results of the test show a gain of 17.0 dB, a gain flatness of less than $\pm$2.BdB, the noise figure of less than 1.0 dB, and the input and output reflection coefficient of less than -10 dB.

• Journal of the Korea Computer Industry Society
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• v.6 no.3
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• pp.429-436
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• 2005

The linear modulation method which has high spectrum efficiency when applying in mobile communication system, the problem occurs. In order to solve like this problem non-linearity characteristic of the power amplifier linearity against the method which it does it investigated. It used a design objection and it implemented the microwave power amplifier. The amplifier which it produces used the micro-strip line and when it imput power 13 dBm from center frequency, the possibility of getting the output power of 28 dBm.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.59-65
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• 1999

There has been an interest to develop an efficient, compact microwave device using field-emitter-arrays (FEA)-based cathode. Toe valuate the optimum device-efficiency in a compact size, the propagation properties of the premodulated electron beam for the FEA-based cathode is studied in detail by the computer simulation using a PIC code, MAGIC. For the premodulated electron beam whose phase of the energy leads the phase of the current by $\pi$/2, the amplitude of the downstream current modulation can be kept as high as the initial modulation level. Using the beam parameters with the beam voltage of 6kV and the current of 2.0A, 30% of efficiency is predicted when the quality factor of 800 is chosen. the device length is reduced about twice compared with that of the conventional device. The design of practical planar cathode is carried out to meet the minimum diameter of the electron beam as 0.5 mm.

• Journal of Navigation and Port Research
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• v.27 no.4
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• pp.437-441
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• 2003

In this paper, the 30 W power amplifier for an IMT-2000 repeater was developed a gain flatness and the third IMD (Intermodulation distortion) by microwave absorber. The absorption ability of the absorber is shown up to -10 dB and -4 dB at 3.6 GHz, 2.3 GHz band, respectively. The power amplifier without absorber has the gain over 57 dB, the gain flatness of $\pm$0.33 dB and the third IMD of 27 dBc at 33.3 W output. Otherwise, the power amplifier with absorber has the gain over 58 dB, the gain flatness of less than $\pm$0.9, the third IMD over 29 dBc at the same output power. As a result, the characteristic of the different type shows improvement of 1 dB in gain, 0.3 dB in gain flatness and 1.77 dBc in IMD.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.2 no.2 s.3
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• pp.65-72
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• 2003

In this work a 6-stage hybrid power amplifier which can be used for the wireless communication systems for MMC(hficrowave Micro Cell) and ITS wireless communication system is designed and fabricated. Ihe power amplifier's each stages was fabricated Hetero-junction Power FET of bare chip type and an alumina substrate with $\varepsilon_{r}$=9.9 and 15-mil thickness. The measured results of power amplifier module showed 33.2$\~$36.5 dB small signal gain, 33.0$\~$34.0 dBm output power at forward frequency (17.6 GHa $\~$ 17.9 CHz) and 36.0$\~$37.0 dB small signal gain, 33.0$\~$34.5 dBm output power at reverse frequency (19.0 GHz $\~$19.2GHz).

• Journal of electromagnetic engineering and science
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• v.17 no.2
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• pp.105-107
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• 2017

The self-biasing circuit through a feedback resistor is applied to a gallium nitride (GaN) distributed power amplifier (PA) monolithic microwave circuit (MMIC). The self-biasing circuit is a useful scheme for biasing depletion-mode compound semiconductor devices with a negative gate bias voltage, and is widely used for common source amplifiers. However, the self-biasing circuit is rarely used for PAs, because the large DC power dissipation of the feedback resistor results in the degradation of output power and power efficiency. In this study, the feasibility of applying a self-biasing circuit through a feedback resistor to a GaN PA MMIC is examined by using the high operation voltage of GaN high-electron mobility transistors. The measured results of the proposed GaN PA are the average output power of 41.1 dBm and the average power added efficiency of 12.2% over the 6-16 GHz band.

• ETRI Journal
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• v.27 no.2
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• pp.133-139
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• 2005

A monolithic microwave integrated circuit (MMIC) chip set consisting of a power amplifier, a driver amplifier, and a frequency doubler has been developed for automotive radar systems at 77 GHz. The chip set was fabricated using a 0.15 ${\mu}$ gate-length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistor (mHEMT) process based on a 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76 to 77 GHz with 15.5 dBm output power. The chip size is 2mm${\times}$ 2mm. The driver amplifier exhibited a gain of 23 dB over a 76 to 77 GHz band with an output power of 13 dBm. The chip size is 2.1mm${\times}$ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16 dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2mm ${\times}$ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in a W-band.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.12-16
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• 2007

In this paper, The 3rd-IMD of class-F power amplifier is improved using CMRC structure in order to remove the parasitic End harmonic at the output load of class-F power amplifier. The total size is very small more than class-F power amplifier using PBG. (Photonicband Gap) structure during improved 3rd-IMD characteristic performance.

• Journal of IKEEE
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• v.23 no.1
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• pp.181-187
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• 2019

In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-band radar applications. It utilizes commercial $0.25{\mu}m$ GaN-based high electron mobility transistor (HEMT) technology and delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signal gain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulse width of $200{\mu}s$ and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are $3.5mm{\times}2.3mm$, generating the output power density of $2.71W/mm^2$. Its power added efficiency (PAE) is 42.6-50.7% in the frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to be applied in a variety of X-band radar applications.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.10
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• pp.24-31
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• 1997

A new design method of stable RF power amplifier using 3dB coupled line is proposed in this thiesis. The proposed method of broadband matching consist of resistive matching circuits at low frequency and lossless matching circuits at microwave band. This design method increase the stability of an amplifier and is suitable for interstage matching. When high power amplifier is designed using this method for PCS base transceiver station, the measured resutls show thst the gain of 18.5dB, and 9W (39.5dBm) output power. We use motorola's MRF6401 for medium power and MRF 6402 for large power and cascaded them.