• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.1
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• pp.107-114
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• 2021

In this paper, a planar transistor oscillator for X-band using a newly proposed L-shaped monopole slot resonator is proposed. For planar design, an L-shaped monopole slot with an open-end is used as a resonator for a transistor oscillator. As a result of the simulated design of the resonator in three stages, a high Q value of 1169.84 and a high insertion loss of 49.934 dB were identified. The results of the final design and manufactured oscillator measurements confirmed that the oscillation output is greater than 7 dBm and has good phase noise characteristics of -58 dBc/Hz at 100 kHz offset. The proposed oscillator is planar and has the advantage of being directly applicable to microwave integrated circuit technology. It also has the advantage of being able to reduce its size as it can only be implemented in microstrip form without additional devices such as metal cavities and tuning screws in 3D structures, as in the case of a DRO (dielectric resonance oscillator).

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.7
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• pp.3450-3453
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• 2013

We implemented double-negative metamaterials using cross-polarized split-ring resonators in a microstripline. The split-ring resonators comprised quad ring structures and were connected with the microstripline in series. Four different structures, with the shorted rings in varying locations, were fabricated to demonstrate reconfigurable band-pass characteristics. The effective permittivities and permeabilities were extracted using the Ziolkowski method. Excellent agreement between the developed circuit model and the measurement was observed up to 10 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.12 no.1
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• pp.1-8
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• 1987

In this paper, resonance frequencies of a reentrant cavity are computed by the mode matching method and the mode orthogonality. The reentrant cavity is composed of a coaxial cable and a cylindrical waveguide, so that resonance frequencies of the resonator can be varied by adjusting the length of the inner conductor of a coaxial cable. The result can be applied to numerous microwave devices such as klystron, wavemeter and resonant circuits of a amplifier and to the measurement of dielectric parameters.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.3 no.2 s.5
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• pp.85-93
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• 2004

In this paper, microstrip stepped-impedance hairpin resonator (SIR) lowpass filter f.PF) by surface rnicromachining on GaAs substrate is sugsested. This filter has the advantages of compact side, easy fabrication, and sharp cutoff frequency response. The new SIR LPF shows the 3 dB passband of dc to 33 GHz, the insertion loss of 0.82 dB, and the return loss of better than 17 dB up to 25.57 GHz. This filter is useful for many microwave system applications.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.288-290
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• 1997

Pulsed laser ablation has been used to fabricate superconducting $YBa_2Cu_3O_{7-x}$(YBCO) thin films on MgO substrates. The epitaxial YBCO thin films were grown at $750^{\circ}C$ and oxygen partial pressure of 200 mTorr. The electrical property and the characteristics of the YBCO thin films have been studied by R-T measurement. scanning electron microscopy (SEM) and X-ray diffraction (XRD). A microstrip line resonator has been fabricated using YBCO superconducting thin films by photolithography and wet-etch process. The resonator has linear microstrip line separated by a gap of 0.278 mm. We observed a fundamental resonance peak at the frequency of 10.007 GHz.

• Journal of information and communication convergence engineering
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• v.2 no.3
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• pp.149-152
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• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• 한국초전도학회:학술대회논문집
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• v.15
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• pp.45-45
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• 2005

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.55 no.11
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• pp.538-543
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• 2006

A high-Power continuous-wave (CW) ten-vane double-strapped magnetron oscillator has been investigated using three-dimensional (3D) particle-in-cell (PIC) numerical simulation code, MAGIC3D. The resonant modes and their resonant frequencies of the ten-vane strapped magnetron resonator were obtained to show a large mode separation near the ${\pi}$-mode. An electron cloud formed in an anode-cathode gap, called an interaction space was confined well enough to result in no leakage current. Five spokes were clearly observed in the electron cloud, which definitely ensured the ${\pi}$-mode oscillation in the ten-vane magnetron. Numerical simulations predicted that the saturated microwave output power measured at the coaxial output port was 5.41 kW at the microwave frequency of 893 MHz, corresponding to a power conversion efficiency of 72.6% when the external axial magnetic field was 1150 gauss and the electron beam voltage and current were 6 kV and 1.25 A, respectively.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.207-210
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• 2000

Properties of SrTiO$_3$ thin films were characterized under the influence of an applied dc voltage utilizing a gold resonator with a flip-chip capacitor. The measurements were performed at microwave frequency ranges and low temperatures cryogenic temperatures. The dielectric constant of 830 and the low loss tangent of 6X10$^{-3}$ at 3.64 GHz were observed at 90 K and 100 V. The quality in the SrTiO$_3$ film was presented in terms of fractional frequency under the bias voltages and cryogenic temperatures.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.151-151
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• 2011

Atmospheric-pressure plasmas are used in a variety of materials processes. The lifetime of most atmospheric-pressure plasma sources is limits by electrode erosion due to energetic ion bombardment. These drawbacks were solved recently by several microplasma sources based on microstrip structure, which are more efficient and less prone to perturbations than other microplasma sources. In this work, we propose microplasma sources based on strip line and microstrip line, developed for the generation of microplasmas even in atmospheric air and analyzes these systems with microwave field simulation via comparative study with two previous microwave sources (Microstrip Spit Ring Resonator (MSRR), Microstrip Structure Source (MSS)).