• 한국재료학회:학술대회논문집
• /
• 한국재료학회 2009년도 춘계학술발표대회
• /
• pp.44.2-44.2
• /
• 2009

BCP powder was synthesized using microwave hydrothermal process with mixed calcium hydroxide and phosphoric acid. After using replica method, porous BCP scaffold was fabricated. PU (Poly Urethane) was used as the fugitive skeleton to fabricate the porous scaffold. BCP powder was mixed in PVB (Polyvinyl butyral) and ethanol solution and then applied to the PU foam by dip coating. After several times of coating and the subsequent oven drying the coated PU foam was burnt out at $750^{\circ}C$ at air to remove the PU. The resulting networked porous composites were sintered at $1250^{\circ}C$, $1300^{\circ}C$ and $1350^{\circ}C$ in microwave furnace for 30 minutes. Material properties of the porous bodies like compressive strength and porosity were investigated. Detailed microstructure of the BCP porous body was characterized by SEM and XRD and TEM techniques. In our experiments, the relationship between mechanical property and viscosity of powder, sintering temperature was investigated.

• E2M - 전기 전자와 첨단 소재
• /
• 제10권6호
• /
• pp.533-540
• /
• 1997

The microwave dielectric properties of ((P $b_{1-x}$ C $a_{x}$)Zr $O_3$ and (P $b_{0.63}$,C $a_{0.37-x}$ $M_{x}$)Zr $O_3$(M=Mg,Sr) ceramics were investigated. In (P $b_{1-x}$ C $a_{x}$)Zr $O_3$ (X=0.33~0.40) ceramics, high quality factor and small temperature coefficient of resonant frequency were obtain in (P $b_{0.63}$C $a_{0.37}$)Zr $O_3$with perovskite structure. In the case of (P $b_{0.63}$C $a_{0.37-x}$M $g_{x}$)Zr $O_3$ dielectric constant temperature coefficient of resonant frequency increased and quality factor decreased due to increase of polarization of A-O bonding. When replacing Ca ion with Sr ion with large ion radius, polarization decreased with increased of bonding length and thus dielectric constant and temperature coefficient of resonant frequency decreased.decreased.creased.

• 한국전기전자재료학회논문지
• /
• 제16권5호
• /
• pp.397-403
• /
• 2003

Microwave dielectric properties of (1-x)ZnW $O_4$-xTi $O_2$ ceramic systems were investigated with calcination temperatures and Ti $O_2$ contents. The ZnW $O_4$ ceramic could be suitably sintered at 1075$^{\circ}C$ and showed the dielectric constant of 13.6, quality factor(Q$\times$ $f_{O}$value) of 22,000 and temperature coefficient of resonant frequency($\tau$$_{f}$) of -65$\pm$2ppm/$^{\circ}C$. Increasing the amount of Ti $O_2$ in the range of 0.25 to 0.45 mol, the dielectric constant and $\tau$$_{f}$ increased due to the role of Ti $O_2$ but the quality factor decreased due to the increase of phase boundaries. The 0.7ZnW $O_4$-0.3Ti $O_2$ ceramic showed the dielectric constant of 19.8, qualify factor(Q$\times$ $f_{0}$) of 20,000 and $\tau$$_{f}$ of -3$\pm$1ppm/$^{\circ}C$.>.EX>.>.>.

• Journal of Electrical Engineering and Technology
• /
• 제9권5호
• /
• pp.1719-1723
• /
• 2014

In this study, the microwave dielectric properties of nano spheroidization glass powders added $Ba(Zn_{1/3}Ta_{2/3})O_3$ ceramics prepared by solid state reaction have been investigated. Adding $(Ba_{0.4}Ca_{0.6})SiO_3$ nano spheroidization glass powders could effectively promote the densification even in the case of decreasing the sintering temperature. When the glass frit is 0.3 wt% and sintering is carried out at a temperature of $1500^{\circ}C$ for 6 hr, a temperature stable microwave dielectric ceramic could be obtained, which has a dielectric constant (${\varepsilon}_r$) of 30.2, a quality factor ($Q{\times}f_0$) of 124,000 GHz and a temperature coefficient of resonance frequency (${\tau}_f$) of $2ppm/^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2000년도 하계학술대회 논문집
• /
• pp.905-908
• /
• 2000

The growth properties of diamond grain were examined by Raman spectroscopy and microscope images. Diamond thin films were prepared on single crystal Si wafers by microwave Plasma chemical vapor deposition. Preparation conditions, substrate temperature, boron concentration and deposition time were controlled differently. Prepared diamond thin films have different surface morphology and grain size respectively Diamond grain size was gradually changed by substrate temperature. The biggest diamond grain size was observed in the substrate, which has highest temperature. The diamond grain size by boron concentration was slightly changed but morphology of diamond grain became amorphous according to increasing of boron concentration. Time was also needed to be a big diamond grain. However, time was not a main factor for being a big diamond grain. Raman spectra of diamond film, which was deposited at high substrate temperature, showed sharp peaks at 1334$cm^{-1}$ / and these were characteristics of crystalline diamond. A broad peak centered at 1550$cm^{-1}$ /, corresponding to non-diamond component (sp$^2$carbon), could be observed in the substrate, which has low temperature.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
• /
• pp.342-343
• /
• 2005

In this study,. the microwave dielectric properties of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics with sintering temperature were investigated for LTCC application. According to the X-ray diffraction patterns, the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics had columbite structure of the $TiTe_3O_8$ phase and scheelite structure of the $CaWO_4$ phase. Increasing the sintering temperature, the bulk density, the dielectric constant and the quality factor of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics were increased. In the case of the $0.6TiTe_3O_8-0.4CaWO_4$ ceramics sintered at $810^{\circ}C$, the bulk density, the dielectric constant and the quality factor were 5.72$g/cm^2$, 33.6, 22,013GHz respectively.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 추계학술대회 논문집
• /
• pp.268-269
• /
• 2007

In this study, the structural and microwave dielectric properties of the $Sr_5Nb_4O_{15}$ cation-deficient perovskite ceramics with sintering temperature were investigated. All sample of the $Sr_5Nb_4O_{15}$ ceramics were prepared by the conventional mixed oxide method and sintered at $1350^{\circ}C{\sim}1500^{\circ}C$. The bulk density, dielectric constant and quality factor of the $Sr_5Nb_4O_{15}$ ceramics were increased with increasing sintering temperature. In the case of the $Sr_5Nb_4O_{15}$ ceramics sintered at $1500^{\circ}C$ for 5h, the dielectric constant, quality factor and temperature coefficient of the resonant frequency (TCRF) were 22.35, 16,577GHz, +13.40ppm/$^{\circ}C$, respectively.

• 청정기술
• /
• 제16권2호
• /
• pp.140-144
• /
• 2010

리튬이온전지의 음극활물질로서 titania-silica 혼합물을 얻기 위해 TiCl4와 TEOS를 전구체로 사용하여 졸-겔법을 이용해 합성하였다. 졸-겔법을 이용하여 혼합물을 합성할 경우에 균일한 분포를 갖는 화합물을 제조할 수 있다. 마이크로파를 이용하여 혼합물을 열처리하여 새로운 물성을 갖는 화합물의 제조를 시도하였다. 합성한 화합물의 물성을 측정하기 위하여 화합물의 조성, 열처리 온도 및 마이크로파 처리등을 실험변수로 사용하였다. 특성 분석방법으로는 합성물질의 구조적 특성과 입자의 표면분석을 하기 위해 XRD(X-ray diffraction)와 SEM (scanning electron microscopy)과 전지 충 방전기를 사용하여 충 방전에 따르는 전지의 용량변화를 관찰하였다.

• 한국마이크로전자및패키징학회:학술대회논문집
• /
• 한국마이크로전자및패키징학회 2000년도 추계 기술심포지움 논문집
• /
• pp.89-92
• /
• 2000

테입 캐스터를 이용하여 바인더/가소제, 글말함량 비율이 다른 LTCC 테입을 제작한 후 특성평가를 하고자 하였다. 슬러리 조성은 서로 다른 바인더/가소제 그리고 분말함량에 따라 각각 4개 조성으로 구성하였다. 모든 슬러리에서 발포나 핀홀이 없는 미려한 표면을 갖는 테입을 얻을 수 있었다. 가장 우수한 기계적 특성 특성은 B/P=3.0, 분말함량 70vo1%인 두께 52 $\mu\textrm{m}$인 테입에서 인장강도 4.6MPa, 신을 29.5%의 특성을 얻을 수 있었다.

• Applied Science and Convergence Technology
• /
• 제26권2호
• /
• pp.34-41
• /
• 2017

A 2.45 GHz microwave plasma with linear antenna has been prepared for hydrophobic and wear-resistible surface coating of carbon steel. Wear-resistible properties are required for the surface protection of cutting tools and achieved by depositing a hydrogenated amorphous carbon film on steel surface through linear microwave plasma source that has $TE_{10}-TEM$ waveguide. Compared to the existing RF plasma source driven by 13.56 MHz, linear microwave plasma source can easily generate high density plasma and provide faster deposition rate and wider process windows. In this study, $Ar/CH_4$ gas mixtures are used for hydrogenated amorphous carbon film deposition. When microwave power of 1000 W is applied, 40 cm long uniform $Ar/CH_4$ plasma could be obtained in gas pressure of 200~400 mTorr. The Vickers hardness measurement of hydrogenated amorphous carbon film on steel surface was evaluated. It was found the optimized deposition condition at $Ar:CH_4=25:25$ sccm, 300 mTorr with microwave power of 1000W and RF bias power of 100W. By deposition of hydrogenated amorphous carbon film, contact angle on steel surfaces increases from $43.9^{\circ}$ to $93.2^{\circ}$.