• The Korean Journal of Ceramics
• /
• v.2 no.4
• /
• pp.197-202
• /
• 1996

The highly oriented diamond particles were deposited on the mirror-polished (100) silicon substrates in the bell-jar type microwave plasma deposition system using a three-step process consisting if carburization, bias-enhanced nucleation and growth. By adjusting the geometry of the substrate and substrate holder, very dense disc-shaped plasma was formed over the substrate when the bias voltage was below -200V. Almsot perfectly oriented diamond films were obtained only in this dense disc-shaped plasma. From the results of the optical emission spectra of the dense disc-shaped plasma, it was found that the concentrations of atomic hydrogen and hydrocarbon radical were increased with negative bias voltage. It was also found that the highly oriented diamonds were deposited in the region, where the intensity ratios of carbonaceous species to atomic hydrogen are saturated.

• Journal of the Korean Chemical Society
• /
• v.47 no.6
• /
• pp.659-662
• /
• 2003

• Proceedings of the Korean Vacuum Society Conference
• /
• 1994.02a
• /
• pp.98-101
• /
• 1994

white diamond thin film, which should be compposed of almost ppure diamond, could be successfully obtained under high ppressure conditions(above 150 Torr) by means of MppECVD(microwave pplasma enhanced chemical vappor depposition, ASTeX 1.5 kW). Characteristics of the films with varing expperimental pparameters have been examined. From the expperimental results, we will discuss the surface morpphology and the growth mechanism of the films.

• Journal of the Korean Vacuum Society
• /
• v.22 no.1
• /
• pp.31-36
• /
• 2013

For the simplification of doping process in amorphous carbon film, arsenic (As) ions were implanted on the nucleated silicon wafer before the growth process. Then amorphous carbon films were grown at the condition of $CH_4/H_2=5%$ by microwave plasma chemical vapour deposition. Because the implanted seeds were grown at the high temperature and the implanted ions were spread, it was possible to reduce the process steps by leaving out the annealing process. When the implanted amorphous carbon films were electrically characterized in diode configuration, field emission current of $0.1mA/cm^2$ was obtained at the applied electric field of about $2.5V/{\mu}m$. The results show that the implanted As ions were sufficiently doped by the self-annealing process by using the growth after implantation.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.94-94
• /
• 2010

As a new plasma source for the plasma enhanced chemical vapor deposition (PCVD) of ${\mu}c$-Si deposition, we have demonstrated a microwave-excited plasma source, which can produce high density (${\sim}10^{12}\;cm^{-3}$) plasma with low electron temperature (~1 eV) and low plasma potential (~10 V). In this plasma source, microwave power radiated from slot antenna is distributed along the plasma-dielectric interface in large area and this enables us to produce uniform high-density plasma in large area. To optimize deposition conditions, deep understanding of gas phase chemistry is indispensable. In this presentation, we will discuss on the gas phase diagnostics of microwave $SiH_4/H_2$ plasma such as $SiH_4$ dissociation or $SiH_3$ radical profile as well as deposited film properties.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.5
• /
• pp.211-214
• /
• 2004

Carbon nanofiber bundles were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition system. These bundles were vertically well-grown under the high negative bias voltage condition. The bundles were composed of the individual carbon nanofiber having less than 100 nm diameters. Turn-on voltage of the field emission was measured around 0.8 V/$\mu\textrm{m}$. Fowler-Nordheim plot of the measured values confirmed the field emission characteristic of the measured current.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.14 no.1
• /
• pp.1-5
• /
• 2004

Carbon nanofilaments were formed on silicon substrate via microwave plasma-enhanced chemical vapor deposition method. The structure of carbon nanofilaments was identified as the carbon nanofibers. The extent of carbon nanofibers growth and the diameters of carbon nanofibers increased with increasing the total pressure. The growth direction of carbon nanofibers was horizontal to the substrate. Laterally grown carbon nanofibers showed the semiconductor electrical characteristics.

• Journal of the Korean Vacuum Society
• /
• v.11 no.4
• /
• pp.256-260
• /
• 2002

Carbon nanotubes on metal(SUS304) substrates were synthesized by using micro-wave plasma-enhanced chemical vapor deposition at $650^{\circ}C$ with gas mixture CH$_4$(11%) and H$_2$(89%). Their structure was investigated by scanning electron microscopy and transmission electron microscopy. Raman spectroscopy was also used to justify the structure and crystallinity of graphite sheets. High-resolution transmission electron microscopy images clearly showed carbon nanotubes to be multwalled. The measured turn-on field and current density obtained from I-V measurement were 4.4 V/$\mu \textrm{m}$ and $8.4\times10^1\mu\textrm{A}/\textrm{cm}^2$, respectively.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.158.1-158.1
• /
• 2013

Microwave는 일반적으로 300 [MHz]~30 [GHz] 사이의 주파수를 가지는 전파로 1 [m] 이하의 파장을 가진다. Microwave를 이용한 플라즈마의 경우 낮은 이온 에너지, 효율적인 전자 가열, 넓은 동작압력 범위, 높은 밀도 등의 장점을 가지고 있어 PECVD(Plasma Enhanced Chemical Vapor Deposition)에 적합한 플라즈마 소스라고 할 수 있다. 또한 Microwave는 파장의 길이가 증착이 이루어지는 진공 챔버의 길이보다 매우 작기 때문에 대면적 적용성이 용이하므로 현재 많은 연구가 이루어지고 있다. 본 연구에서는 Fluid Simulation을 통해 Maxwell's equation, continuity equation, electromagnetic wave equation 등을 이용하여 Microwave의 파워 및 압력에 따른 플라즈마 parameter를 계산하고, 자체 제작한 Linear microwave plasma 장치에서 정전 탐침(Langmuir Probe)을 이용하여 플라즈마 Parameter를 측정하였다. 또한 Simulation 결과와 실험결과를 비교 분석하였다.

• Journal of the Korean Chemical Society
• /
• v.48 no.6
• /
• pp.663-666
• /
• 2004